THE METAL-SEMICONDUCTOR CONTACT

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Transcription:

THE METAL-SEMICONDUCTOR CONTACT

PROBLEM 1 To calculate the theoretical barrier height, built-in potential barrier, and maximum electric field in a metal-semiconductor diode for zero applied bias. Consider a contact between tungsten and n-type silicon doped to Nd=10 16 cm -3 at T =300K.

PROBLEM 2 To calculate thc semiconductor doping and Schottky barrier height from the silicon diode experimental data shown in left figure T = 300 K.

PROBLEM 3 To calculate the effective Richardson constant (A*) from the I-V characteristics. Consider the tungsten-silicon diode curve, JsT=6*10-5 A/cm 2 and assume a harrier height of ΦBn=0.67 V.

BIPOLAR JUNCTION TRANSISTORS

BJT Transistors are three terminal active devices made from different semiconductor 1. Please summarize materials the physical that configuration can act as either of BJT an and insulator how it works. a conductor by the 2. How application many regions of a can small bjts signal operate voltage. within? The transistor s ability to change between 3. Please summarize these two the states symbols enables of BJTs it to have two basic functions: switching (digital 4. Please electronics) summarize the or common amplification base connection, (analogue common electronics). emitter connection, common collector connection. There are two basic types of bipolar transistor construction, PNP and NPN. The Bipolar Transistor basic construction consists of two PN-junctions producing three connecting terminals. These three terminals are known and labelled as the Emitter ( E ), the Base (B ) and the Collector ( C ) respectively. Bipolar Transistors are current regulating devices that control the amount of current flowing through them in proportion to the amount of biasing voltage applied to their base terminal acting like a current-controlled switch.

PROBLEM 1 Analyze the following circuit to determine all node voltages and branch currents. Assume β = 100.

PROBLEM 2 Redesign the circuit in example 1 (i.e., find new values for RE and RC ) to establish a collector current of 0.5 ma and a reverse-bias voltage on the collectorbase junction of 2V.

PROBLEM 3 Analyze the following circuit to determine all node voltages and branch currents. Assume β = 100.

PROBLEM 4 Analyze the following circuit to determine all node voltages and branch currents. Assume β = 100.

PROBLEM 5 Analyze the following circuit to determine all node voltages and branch currents. Assume β = 100.

PROBLEM 6 Analyze the following circuit to determine all node voltages and branch currents. Assume β = 100.

JFET

1.PLEASE The Junction SUMMARIZE Field THE Effect PHYSICAL Transistor CONFIGURATION (JUGFET OF JFET or AND JFET) HOW has IT WORKS. no PNjunctions 2. WHAT S THE but DRAIN instead CURRENT has a narrow IN THE ACTIVE piece of REGION high AND resistivity THE RESISTANCE semiconductor OF THE material CHANNEL? forming a Channel of either N-type or P-type silicon for the majority carriers to flow through with two ohmic electrical connections at either end commonly called the Drain and the Source respectively. There are two basic configurations of junction field effect transistor, the N- channel JFET and the P-channel JFET. The N-channel JFET s channel is doped with donor impurities meaning that the flow of current through the channel is negative (hence the term N-channel) in the form of electrons. Likewise, the P-channel JFET s channel is doped with acceptor impurities meaning that the flow of current through the channel is positive (hence the term P-channel) in the form of holes. N-channel JFET s have a greater channel conductivity (lower resistance) than their equivalent P-channel types, since electrons have a higher mobility through a conductor compared to holes. This makes the N-channel JFET s a more efficient conductor compared to their P-channel counterparts.

MOSFET

1.PLEASE SUMMARIZE THE PHYSICAL CONFIGURATION OF MOSFET. 2.HOW MANY FORMS DO MOSFETS HAVE? 3.PLEASE SUMMARIZE THE SYMBOLS OF MOSFETS. 4.PLEASE SUMMARIZE THE VGS OF MOSFETS AT ON/OFF STATES. 5.HOW MANY REGIONS CAN MOSFETS OPERATE WITHIN?

PROBLEM 1 To design the width of a MOSFET such that a specified current is induced for a given applied bias. Consider an ideal n-channel MOSFET with parameters L = 1.25 μm, μn = 650cm 2 /V-s. Cox = 6.9*10-8 F/cm 2 and V T = 0.65 V. Design the channel width W such that I D (sat) =4 m.4 for V GS = 5 V.

In the saturation region, the transconductance is a linear function of VGS, and is independent of V PROBLEM 2 What is the definition of the MOSFET transconductance? Please calculate the transconductance in the saturation region. Solutions: The MOSFET transconductance is defined as the change in drain current with respect to the corresponding change in gate voltage, or The transconductance is sometimes referred to as the transistor gain. The I-V characteristics of an n-channel MOSFET in the saturation region were given by The transconductance in this region of operation is given by

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