KLEF University, Guntur B.Tech II year, First Semester-2011-12 Date: 2-07-2011 PROGRAM NAME Course name Course Coordinator Course Detail : ELECTRONICS & COMMUNICATION ENGINEERING : ELECTRONICS DEVICES AND CIRCUITS : M. SIVA GANGA PRASAD : Theory and Lab Lecture Hours : 60 I ECE PROGRAMME DESCRIPTION: The main objective of an engi neering course in Electronics & communication Engineering is to prove the technical viability of the new technology, together with, as appropriate, its possible economic advantages. Demonstration activities are expected to speed up the adoption of new communication techniques by reducing the techno-economic uncertainties and risks associated with innovation and, to enhance the attractiveness of new technology and its approaches in industries and services. To analyze the ethical, social and legal issues raised by specific applications of electronics and communications in view of their being taken into account in public policy deliberations. 3 rd generation (3G) UMTS (Universal mobile Telephone systems) of selected topics will be pr omoted, particularly as regards: channel capacity and quality improvement, Signal processing algorithms developments, co-channel interference reduction strategies etc. To provide application oriented teaching with live demonstrations. To motivate the students in developing instruments and gadgets of social importance and also to design the products for real life problems. To train the students right from 2 nd year to make him directly fit in the industrial and R&D environment. 1
PROGRAMME OBJECTIVE: The above programme description can be broadly defined on five counts as below. 1. Preparation: To prepare students tailor made to fit into any industry/research associated with designing and manufacturing of electronics products, to make the students get ready in understanding the application of technology in relation to various electronic devices and interdisciplinary areas of ECE and to create an i mpact on t he global and ec onomical requirements of the country and act accordingly. 2. Core Competence: To endow students with a concrete foundation of basic and applied aspects of electronics & communication Engg to carry out independent research in core and allied areas of ECE. 3. Breadth: To nurture students with in-depth scientific and technical knowledge so as to plan, realize, Understand, investigate and produce quality products and suggest appropriate remedies to meet the contemporary problems round the globe 4. Professionalism: The instruction should emphasize the primary purpose of the profession as being the pursuit of a l earned art in the spirit of public service. The sense of professionalism should convey the responsibility to evaluate the impact of the opportunity and obligation of the practitioner, to be in concert with peers, guides, and direct the profession. 5. Learning Environment: To create an ambience to the learner where he can put into practice his scientific and technical skills to gain confidence in his area of study/work, prone with ethical standards and good practices. After the successful completion of the Programme the students will demonstrate the following characteristics that are referred to as Programme Outcomes. 2
II PROGRAMME OUTCOMES: a) The students will acquire knowledge of Physical, mathematical and engineering principles that would further help him in the vertical understanding of the subject. b) The student will demonstrate an ability to identify, formulate and decipher problems associated with communications. c) The student will be able to understand the design concepts, feasible processes and products that are reasonably viable. d) The student will demonstrate an ability to design basic experiments and systems necessary for bulk scale production of various electronic devices. e) The student will demonstrate an ability to visualize and w ork on l aboratory and multidisciplinary tasks. f) The student will demonstrate skills to use modern engineering tools, softwares and equipment to analyze problems. g) The student will demonstrate knowledge of professional and ethical responsibilities. h) The student will be able to communicate effectively in both verbal and written form. i) The student will exhibit ability to realize the impact of engineering solutions on the society and on contemporary issues. j) The student will develop confidence for self education and ability for life-long learning. k) The student will be able to get through in competive examinations for higher learning. 3
To check the Teachers intent (at the beginning of the Programme) and the students performance at the end of the Programme, Programme Objectives are mapped with Programme Outcomes as given under: Mapping of the ECE Program Objectives with Program Outcomes. Program Outcomes a b c d e f g h i J k 1 2 Program Objectives 3 4 5 III COURSE DESCRIPTION: Electronic Devices & Circuits is defined as the various electronic devices are connected as an appr opriate circuitry and verify their characteristics. All the basic devices like semi conductor junction diodes, BJTs and FETs are responsible to build various communication circuits. The basic understanding of EDC is a pr e-requisite for any student trying to establish a research or academic career in the field of ECE. Most of the research in ECE hovers around Communications, Signal Processing, Image Processing and VLSI. Thus, it is essential to know the basic and fundamental characteristics of various electronic devices. This paper describes the applications PN junction diodes, fundamental requirements for BJT to acts as an am plifier and characteristic of various unipolar devices. IV COURSE OBJECTIVES After thorough learning of EDC, the student: 1. Will understand the role of various semi conductor devices in the field of electronics and their applications in ECE. 4
2. Will evaluate the various stabilization and compensation techniques to set the operating point in BJTs. 3. Will analyze the various low frequency parameters in BJTs and FETs with reference to various approaches. 4. Will analyze the various high frequency parameters in BJTs and FETs with reference to various approaches. V COURSE OUTCOMES: At the end of the course the student will be able to 1. Understand various devices and their functions 2. Identify Various applications of semi conductor diodes. 3. Do Low and High frequency analysis of BJTs and FETs. 4. Know the Operation Mechanism of various unipolar devices 5. Understand Operation principle of various photo devices. Mapping of Course Objectives with Programme Outcomes Program Outcomes a b c d e f g h i j k 1 Course Objectives 2 3 4 VI SYLLABUS: UNIT I RECTIFIERS & FILTERS Diode as a Rectifier, Half Wave, Full wave, Full wave and Bridge Rectifiers without filter and w ith inductor filter, Capacitor filter, L s ection and π- section filters, Percentage of regulation, variation of output voltage with load current for all combinations. 5
UNIT II JUNCTION TRANSISTOR: Transistor DC bias its stabilization, various stabilization and compensation circuits, thermal runaway, thermal stability, Hybrid parameter model of transistor, inert conversions of H parameters.. UNIT III LOW FREQUENCY TRANSISTOR AMPLIFIER CIRCUITS: Low frequency hybrid equivalent circuit of CE, CB, CE configurations, small signal analysis of transistor with A1., Av, A1s, Avs,Z1, Zo,, CE amplifier with Emitter resistor, Miller s Theorem, High input resistance transistor circuits, Darlington pair amplifier, cascode Amplifier UNIT _ IV FET & BIASING: JFET, depletion MOSFET and enhancement MOSFET: basic construction, operation, drain and transfer characteristics FET parameters - rd, gm, µ : biasing methods, FET low frequency model. UNIT V Special diodes: Zener diode, Varactor diode, LED and their characteristics, Schottky diode, SCR and their characteristics. VII UNIT WISE RATIONALIZATION: UNIT-I: UNIT-II: PN junction diode is a fundamental semiconductor device which can be used for various applications like diode as a switch, diode as a rectifier and fatherly various filter circuits those are used in various rectifier circuits. The rationale of this unit is to enable the students to understand the principle, functions of diode as its application point of view. To set the suitable operating point for the DC load line analysis is needed. To do so, various stabilization and compensation methods are studied. Finally hybrid model of BJT is studied. This unit emphasizes the need for understanding the requirements of the Bipolar junction transistor to acts as an amplifier and it gives the idea of various low frequency parameters UNIT-III: It gives the information about Low frequency analysis with respective Hybrid, π model of BJT. This unit describes the common emitter configuration amplifier with its high frequency current gain and band width product. UNIT-IV: Characteristics various Field Effect Transistor (FET), types FETs and their Characteristics are described. Finally, low frequency model of FET is described. This unit explains the structures of various FETs and their characteristics. 6
UNIT-V: Special diodes: Zener diode, Varactor diode, LED and their characteristics, UJT: Basic construction, electrical equivalent circuit and operation, emitter Characteristics, SCR. This unit describes the structures, functions application of various unipolar devices. 7
VIII. SESSION PLAN S.No Unit Sessio n Content Learning objective, End of the session student will Methodology Faculty Approach Student approach Learning outcome 1 I 1. Introduction understand Oral Facilitates Listens and Understand participate 2 I 2. Classification of rectifiers Observe the categories and their functions Chalk and talk Explanation Listen Remember 3 I 3. Half wave rectifier Analysis of various parameters related to HWR 4 I 4. Half wave rectifier Analysis of various parameters related to HWR 5 I 5. Full wave rectifier Analyze of various parameters related to HWR 6 I 6. Full wave rectifier Analyze of various parameters related to HWR 7 I 7. Bridge rectifier Understand Basic construction, operation 8 8. Bridge rectifier Understand Basic construction, operation Chalk and talk Explanation Listen and Practice Chalk and talk Explanation Listen and Practice Chalk and talk Explanation Listen and Practice Understand Understand Understand and Analyze Chalk and talk Explanation Listen Understand and Analyze PPT Explanation Observe Understand and Analyze PPT Explanation Observe Understand and Analyze 9 I 9. Rectifier with capacitor filter Apply and use Chalk and talk Explanation Observe Explore the mechanism 10 I 10. Rectifier with inductor filter Apply and use Chalk and talk Explanation Listen Explore the mechanism 11 I 11. Rectifier with L section filter Apply and use Chalk and talk Explanation Listen Explore the mechanism 12 I 12. Rectifier with π section filter Apply and use Chalk and talk Explanation Listen Explore the mechanism 8
13 I 13. Performance comparison of filtered rectifiers 14 II 14. Introduction to biasing methods 15 II 15. principles of biasing methods 16 II 16. principles of biasing methods 17 II 17. Introduction to stabilization Analyze and Analyze and choose appropriate PPT Explanation Observe Application understand Oral Explanation Observe and Understand comprehend Apply and use this Chalk and talk Explanation Listens Understand principle Apply and use this Chalk and talk Explanation Listen and Remember and method practice recall oral Explanation Listen understand this method Analyze and Chalk and talk Explanation Listen Understand this method Analyze and Chalk and talk Explanation Listen and Understand and this method practice Analyze and Chalk and talk Explanation Listen and Understand and this method practice PPT Explanation Listen Understand and 18 II 18. Various stabilization methods 19 II 19. Various stabilization methods 20 II 20. Various stabilization methods 21 II 21. Compensation techniques Analyze and 22 II 22. Compensation techniques Analyze and PPT Explanation Listen Understand and 23 II 23. Thermal run away understand Chalk and talk Explanation Observes Understand and 24 II 24. Hybrid model understand Chalk and talk Explanation Listen Evaluate 25 II 25. Hybrid model understand Chalk and talk Explanation Listen Understand and 26 II 26. Hybrid model understand Chalk and talk Explanation Listen Understand and 27 II 27. Conversions of h parameters understand Chalk and talk Explanation Listen Understand and 28 II 28. Conversions of h parameters understand Chalk and talk Explanation Listen Understand and 29 III 29. Low frequency hybrid Analyze and Chalk and talk Explanation Listen Evaluate and equivalent circuit of CE 30 III 30. Low frequency hybrid equivalent circuit of CB Analyze and Chalk and talk Explanation Listen Evaluate and 9
31 III 31. Low frequency hybrid equivalent circuit of CC Analyze and Chalk and talk Explanation Listen Evaluate and 32 III 32. small signal analysis of transistor with A1., Av, 33 III 33. small signal analysis of transistor with A1s, Avs,Z1, Zo 34 III 34. CE amplifier with Emitter resistor understand Chalk and talk Explanation Listen Evaluate and understand Chalk and talk Explanation Listen Evaluate and Analyze and Chalk and talk facilitates Observe Analyze and 35 III 35. CE amplifier with Emitter resistor Analyze and Chalk and talk facilitates Observe Analyze and 36 III 36. Miller s Theorem understand Chalk and talk Explanation Observes Understand and 37 III 37. Miller s Theorem understand Chalk and talk Explanation Observes Understand and 38 III 38. High input resistance transistor circuits understand PPT Explanation Observes Understand and 39 III 39. Darlington pair amplifier understand Chalk and talk Explanation Listen Understand and 40 III 40. Darlington pair amplifier understand Chalk and talk Explanation Listen Understand and 41 III 41. cascode Amplifier understand PPT Explanation Observes Understand and 42 IV 42. Introduction Uni-polar devices understand PPT Explanation Listen Understand and 43 IV 43. JFET types,operation understand PPT Explanation Listen Understand and 44 IV 44. JFET types,operation understand PPT Explanation Listen Understand and 45 IV 45. Transfer & drain characteristics understand Chalk and talk Explanation Listen Understand and 46 IV 46. Transfer & drain characteristics understand Chalk and talk Explanation Listen Understand and 10
47 IV 47. Introduction to MOSFET, types understand PPT Explanation Listen Understand and 48 IV 48. MOSFET types,operation understand Chalk and talk Explanation Listen Understand and 49 IV 49. Transfer & drain characteristics understand Chalk and talk Explanation Listen Understand and 50 IV 50. µ, rd, gm parameters. understand Chalk and talk Explanation Comprehend Understand and 51 IV 51. Biasing techniques for FET Analyze and Chalk and talk Explanation Listen Understand and 52 IV 52. Low frequency model of FET understand Chalk and talk Explanation Listen Understand 53 IV 53. Low frequency model of FET understand Chalk and talk Explanation Listen Understand and 54 V 54. Introduction to Zener diode, understand Chart and Model Explanation Listen Understand basic construction 55 V 55. Characteristics of Zener understand Chalk and talk Explanation Listen understand diode 56 V 56. Introduction to Varactor understand PPT Explanation Listen understand diode, basic construction, characteristics 57 V 57. Introduction to SCR and understand PPT Explanation Listen Understand characteristics 58 V 58. Introduction to light emitting understand Chalk and talk Explanation listen Understand diode, basic construction 59 V 59. Characteristics of LED understand Chalk and talk Explanation listen Understand s and comprehends 60 V 60. Schottky diode understand Chalk and talk Explanation listen Understand s and comprehends 11
IX.SELF LEARNING TOPICS: S.No TOPIC SOURCE 1. Quantitative theory of P-N junction diode T1 2. V-I characteristics of P-N junction diode T1 3. Junction Transistor T1 4. CB,CE and CC configurations of BJT and their characteristics T1 5. Transistor as an amplifier T1 Head Of the Dept Course co-coordinator Course Instructor 12