AMMC - 622 6-2 GHz Low Noise Amplifier Data Sheet Chip Size: 17 x 8 µm (67 x 31. mils) Chip Size Tolerance: ± 1 µm (±.4 mils) Chip Thickness: 1 ± 1 µm (4 ±.4 mils) Pad Dimensions: 1 x 1 µm (4 ±.4 mils) Description Avago Technologies AMMC-622 is a high gain, lownoise amplifier that operates from 6 GHz to 2 GHz. This LNA provides a wide-band solution for system design since it covers several bands, thus, reduces part inventory. The device has input / output match to Ohm, is unconditionally stable and can be used as either primary or sub-sequential low noise gain stage. By eliminating the complex tuning and assembly processes typically required by hybrid (discrete-fet) amplifiers, the AMMC- 622 is a cost-effective alternative in the 6-2 GHz communications receivers. The backside of the chip is both RF and DC ground. This helps simplify the assembly process and reduces assembly related performance variations and costs. It is fabricated in a PHEMT process to provide exceptional noise and gain performance. For improved reliability and moisture protection, the die is passivated at the active areas. Features Wide frequency range: 6-2 GHz High gain: 23 db Low Ω Noise Figure: 2. db Ω Input and Output Match Single Supply Bias Applications Microwave Radio systems Satellite VSAT, DBS Up/Down Link LMDS & Pt-Pt mmw Long Haul Broadband Wireless Access (including 82.16 and 82.2 WiMax) WLL and MMDS loops AMMC-622 Absolute Maximum Ratings [1] Symbol Parameters/Conditions Units Min. Max. V d Positive Drain Voltage V 7 V g Gate Supply Voltage V NA I d Drain Current ma 1 P in CW Input Power dbm T ch Operating Channel Temp. C + T stg Storage Case Temp. C -6 + T max Maximum Assembly Temp (6 sec max) C +3 Note: 1. Operation in excess of any one of these conditions may result in permanent damage to this device Note: These devices are ESD sensitive. The following precautions are strongly recommended. Ensure that an ESD approved carrier is used when dice are transported from one destination to another. Personal grounding is to be worn at all times when handling these devices
AMMC-622 DC Specifications/Physical Properties [1] Symbol Parameters and Test Conditions Units Min. Typ. Max. I d V g Drain Supply Current (under any RF power drive and temperature) (V d =3. V) Gate Supply Operating Voltage (I d(q) = 8 (ma)) q ch-b Thermal Resistance [2] (Backside temperature, T b = C) ma 7 V NA C/W Notes: 1. Ambient operational temperature T A = C unless otherwise noted. 2. Channel-to-backside Thermal Resistance (q ch-b ) = 26 C/W at T channel (T c ) = 34 C as measured using infrared microscopy. Thermal Resistance at backside temperature (T b ) = C calculated from measured data. AMMC-622 RF Specifications [3, 4, ] (T A = C, V d =3. V, I d(q)= ma, Z o = Ω) Symbol Parameters and Test Conditions Units Minimum Typical Maximum Sigma Gain Small-signal Gain [6] db 21 23.3 NF Noise Figure into W db 7-1 GHz = 2.1 1-16 GHz = 1.8 16-2 GHz = 2. P- 1dB Output Power at 1dB Gain Compression OIP3 Third Order Intercept Point; Df=1MHz; Pin=-3dBm 8 GHz = 2.4 12 GHz = 2.2 18 GHz = 2.4.1 dbm +9.87 dbm +19 1.2 RLin Input Return Loss [6] db -12-1.31 RLout Output Return Loss [6] db -16-1.68 Isol Reverse Isolation [6] db -4. Notes: 3. Small/Large -signal data measured in wafer form T A = C. 4. 1% on-wafer RF test is done at frequency = 8, 12, and 18 GHz.. Specifications are derived from measurements in a Ω test environment. Aspects of the amplifier performance may be improved over a more narrow bandwidth by application of additional conjugate, linearity, or low noise (Γopt) matching. 6. As derived from measured s-parameters LSL USL USL 22 23 24 1.7 1.8 1.9-11.6-11.3-11 -1.7-1.4-1.1-9.8-9. Gain at 12 GHz Noise Figure at 12 GHz Return Loss at 12 GHz Typical distribution of Small Signal Gain, Noise Figure, and Return Loss. Based on part sampled over several production lots. 2
AMMC-622 Typical Performances (T A = C, V d =3. V, I D = ma, Z in = Z out = Ω unless otherwise stated) NOTE: These measurements are in a Ω test environment. Aspects of the amplifier performance may be improved over a more narrow bandwidth by application of additional conjugate, linearity, or low noise (Γopt) matching.figure 1. Typical Gain Gain (db) 2 1 Isolation (db) -1-2 -3-4 - Input Return Loss(dB) - -1-6 8 1 12 14 16 18 2 Figure 1. Typical Gain -6 6 8 1 12 14 16 18 2 Figure 2. Typical Isolation -2 6 8 1 12 14 16 18 2 Figure 3 Typical Input Return Loss 4. 3. 3. 2 2 Output Return Loss (db) -1-2 Noise Figure [db] 2. 2. 1. 1.. OP1dB (dbm) 1 1 OIP3 (dbm) -3 6 8 1 12 14 16 18 2 Figure 4. Typical Output Return Loss. 6 8 1 12 14 16 18 2 Frequency [GHz] Figure. Typical Noise Figure into a W load. 6 8 1 12 14 16 18 2 Frequency [GHz] Figure 6. Typical Output P -1dB and 3 rd Order Intercept Pt. 3 2-1 -2 C -4 C +8 C - C -4 C +8 C S21 (db) S12 (db) -3 S11 (db) -1 1 C -4 C +8 C 4 6 8 1 12 14 16 18 2 22 Figure 7. Typical Gain (s21) over temperature -4 - -6 4 6 8 1 12 14 16 18 2 22 Figure 8. Typical Isolation (s12) over temperature - -2 4 6 8 1 12 14 16 18 2 22 Figure 9. Typical Input Return Loss (s11) over temperature 3
AMMC-622 Typical Performances (T A = C, V d =3. V, I D = ma, Z in = Z out = Ω unless otherwise stated) NOTE: These measurements are in a Ω test environment. Aspects of the amplifier performance may be improved over a more narrow bandwidth by application of additional conjugate, linearity, or low noise (Γopt) matching. - C -4 C +8 C 4 3. -4 C C +8 C 62 6-4 C + C +8 C S22 (db) -1 - -2 - -3 4 6 8 1 12 14 16 18 2 22 Figure 1. Typical Output Return Loss over Temperature NF (db) 3 2. 2 1. 1. 6 8 1 12 14 16 18 2 Figure 11. Typical Noise Figure over Temperature Idd (ma) 8 6 4 2 3 3. 4 4. Vdd (V) Figure 12. Typical Total Idd over Temperature 3 V -1 V - V 2-2 S21 (db) S12 (db) -3 S11 (db) -1 1-4 - - 4 6 8 1 12 14 16 18 2 Figure 13. Typical Gain over Vdd (supply voltage.) -6 4 6 8 1 12 14 16 18 2 Figure 14. Typical Isolation over Vdd (supply voltage) -2 4 6 8 1 12 14 16 18 2 Figure. Typical Input Return Loss over Vdd (supply voltage) - V 3. 2. V 12 1 S22 (db) -1 - -2 NF (db) 2. 1. OP1dB (dbm) 8 6-1. 4-3 -3 4 6 8 1 12 14 16 18 2 Figure 16. Typical Output Return Loss over Vdd (supply voltage).. 6 8 1 12 14 16 18 2 Figure 17. Typical Noise Figure over Vdd (supply voltage.) 2 V 6 8 1 12 14 16 18 2 Figure 18. Typical OP -1dB over Vdd (supply voltage.) 4
AMMC-622 Typical Scattering Parameters [1] (Tc= C, V D1 =V D2 = 3 V, Z in = Z out = Ω) Freq GHz S11 S21 S12 S22 db Mag Phase db Mag Phase db Mag Phase db Mag Phase 4. -.146.983 13.687 9.33 2.829-128.237-48.748.4-1.81-4.132.621 171.1 4. -1.392.82 74.728 21.862 12.391 118.6-41.44.9 13.896-13.16.211 141.837. -.823.91 37.284 23.13 14.338 39.967-44.986.6 29.72-16.64.149 168.28. -1.961.798-3.46 23.71.328 -.87-46.77. -28.7-17.481.134-17.481 6. -.1.3-33.43 23.699.31-9.866 -.848.3-4.938-17.8.139-166.821 6. -7.4.426-3.33 23.622.174-9.79-1.73.3-76.787-16.77.146-164.16 7. -1..311-6.197 23.7.6-126.279-2.284.2-19.72-16.49.149-16.262 7. -11.146.277-71.6 23.641.27-3.68-2.173.2-18.492-16.7.14-16.14 8. -11.93.3-76.86 23.761.419-179.298-1.49.3-134.19-16.83.144-16.98 8. -11.917.4-79.87 23.793.47 6.812 -.677.3-149.67-17..141-166.78 9. -11.731.9-8.876 23.98.681 133.712 -..3-9. -17.31.136-167.942 9. -11.478.267-93.111 24..849 111.612 -.296.3-171.48-17.862.128-168.92 1. -11.328.271-1.43 24.71.979 9.667-48.911.4-176.724-18.9.119-168.793 1. -11.278.273-17.17 23.989.829 7.398-49.83.4 174.61-19.271.19-166. 11. -11.184.276-114.292 23.9.69.874-48.773.4.84-19.98.11-161.67 11. -11.267.273-119.1 23.867.67 31.947-47.6.4.799-2.39.97-3.779 12. -11.33.281-1.24 23.786.464 14.18-47.811.4.219-2.177.98-146.79 12. -1.82.288-13.8 23.724.34-3.874-46.361. 124.78-19.46.16-141.31 13. -1.768.289-136.143 23.62.17-2.93-46.149. 119.468-18.642.117-137.31 13. -1.68.292-14.774 23.68.81-37.794-4.36. 12.694-17.844.128-136.674 14. -1.672.293-147.67 23.49 14.891-4.2-44.238.6 18.871-17.88.14-136.397 14. -1.611.29-1.974 23.31 14.77-7.766-44.824.6 98.487-16.419.1-137.7. -1.629.294-7.342 23.287 14.6-86.927-43.91.7 8.314 -.782.163-14.788. -1.792.289-164.23 23.184 14.428-12.737-42.11.8 81.787 -.469.168-14.11 16. -11.118.278-169.248 23.119 14.32-119.61-41.86.8 64.948 -.429.169 -.386 16. -11.744.9-173.681 22.973 14.82-13.63-4.6.9 63.398 -.66.166-6.73 17. -12.71.23-176.84 22.847 13.879-1.33-41.699.8 48.16-16..8-16.98 17. -13.27.219-179.413 22.728 13.689-166.718-4.813.9 43.81-16.79.14-166.616 18. -14.63.198-176.31 22.48 13.49 176.8-4.23.1 34.19-17.791.129-173.74 18. -14.83.181-172.4 22.336 13.86 16.79-39.642.1 21.429-19.662.14 178.9 19. -14.72.184-161.713 22.122 12.767 144.491-39.641.1 2.91-22.64.74 169.68 19. -13.71.26-3.813 21.797 12.298 128.1-39.632.1 8.7-28.897.36 148.784 2. -12.221.24-148.391 21.41 11.819 111.21-38.926.11-7.98-3.137.18 31.294 2. -1.382.33-147.276 2.983 11.198 9.148-39.1.11-13.94-23.741.6 -.174 21. -8.71.367 -.64 2.472 1.8 78.624-38.616.12 -.399-18.636.117-26.892 21. -7.194.437-6.78 19.879 9.862 62.93-38.726.12-3. -.322.171-36.89 22. -.883.8-163.716 19.198 9.118 47.73-38.9.11-38.784-12.78.23-4.747 Note: Data obtained from on-wafer measurements
AMMC-622: Typical Scattering Parameters [1] (Tc= C, V D1 =V D2 = V, Z in = Z out = Ω) Freq GHz S11 S21 S12 S22 db mag phase db mag phase db mag phase db mag phase 4. -.673.9 13.44 8.14 2.66-13.371 -.1.3-19.41-3.6.661 17.277 4. -1.492.842 74.318 21.39 11.742 117.926-43.67.7 13.138-1.722.291 137.294. -.63.929 37.411 22.84 13.87 43.3-4.849. 43.26-13.626.28 14.892. -2.32.791-3.432 23.91.79-11.67-48.892.4-22.1-17.72.14 136.619 6. -4.747.79-34.664 24.262 16.33-6.971-49.74.3 -.634-2.223.97 138.87 6. -7.98.417 -.144 24.334 16.471-94.487-1.629.3-9.737-23.311.68 14.78 7. -1.93.313-66.67 24.292 16.392-126.72-4.247.2-18.4-26.96. 2.9 7. -11.669.261-72.43 24.333 16.468 -.39-2.22.2-121.34-29.83.32 167.732 8. -12.3.243-74.699 24.46 16.66 178.48-1.1.3-137.13-33.16.22-7.216 8. -12.8.249-78.6 24.422 16.639 3.32-2..2 -.276-31.68.26-119.44 9. -11.733.9-84.4 24.477 16.744 129.984-1.16.3 -.878-28.2.39-97.9 9. -11.33.272-91.44 24.11 16.81 17.486-2.868.2-177.492 -.326.4-87.83 1. -11.62.28-99.362 24.49 16.883 86.3-1..3 17.74-22.836.72-83.84 1. -1.86.288-16.223 24.467 16.724 6.381 -.416.3 169.269-2.4.94-82.739 11. -1.68.292-113.824 24.397 16.9 4.7 -.39.3 161.489-18.62.117-83.62 11. -1.62.293-12.486 24.282 16.372 26.1-49.84.4 14.732-17.73.14-86.634 12. -1.84.296-126.927 24.16 16.2 7.62-49.63.3 129.43 -.819.162-91.173 12. -1.383.33-133.49 24.37.916-1.789-49.737.3 117.272-14.698.184-9.81 13. -1.49.299-139.396 23.88.641-28.23-47.63.4 112.68-13.888.22-1.779 13. -1.42.3-144.69 23.77.412-4.463-47.3.4 114.739-13.27.217-16.161 14. -1.61.29 -.864 23.82.14-62.199-48.3.4 11.112-12.824.228-111.62 14. -1.688.292 -.8 23.4 14.792-79.22-47.3.4 89.49-12.9.237-116.32. -1.967.283-161.1 23.239 14.19-9. -46.791. 88.46-12.349.241-121.314. -11.23.274-166.831 23.18 14.4-111.71-4.741. 82.23-12.368.241-126.26 16. -11.633.262-17.42 22.817 13.831-128.9-4.71.6 6.78-12.61.234-13.7 16. -12.194.246-173.77 22.22 13.369-144.87-46.43. 6.3-12.974.2-132.934 17. -13.128.221-174.413 22.241 12.944-9.749-44.636.6 2.243-13.422.213-134.3 17. -13.449.213-173.66 21.974 12.2-17.168-44.918.6 4.428-13.81.23-134.94 18. -13.681.27-169.464 21.613 12.41 169.124-44.93.6 41.677-14.243.194-134.37 18. -13.92.21-166.82 21.241 11.36 4.6-44.297.6 28.636-14.79.182-132.741 19. -13.377.214-162.36 2.881 11.67 139.77-44.3.6 18.417 -.14.17-128.824 19. -12.87.23-8.79 2.48 1.41 124.37-44.648.6 17.829 -.378.17-124.91 2. -11.93.263 -.67 2.7 1.8 19.618-44.29.6 7.2 -.26.172-118.77 2. -1.42.32-6.118 19.61 9.61 9.3-43.949.6 4.72-14.896.18-112.117 21. -9.292.343-8.44 19.7 9.7 81.21-44.129.6 2.16-14.21.19-18.617 21. -8.122.393-161.368 18.767 8.677 66.82-43.714.7-6.93-13.18.211 -.366 22. -7.19.446-16.866 18. 8.18 3.298-43.878.6-4.49-12.8.23-12.937 Note: Data obtained from on-wafer measurements 6
Biasing and Operation The AMMC-622 is normally biased with a single positive drain supply connected to both V D1 and V D2 bond pads through the 2 bypass capacitors as shown in Figure 2. The recommended supply voltage is 3 V. It is important to have 2 separate 1pF bypass capacitors, and these two capacitors should be placed as close to the die as possible. The AMMC-622 does not require a negative gate voltage to bias any of the three stages. No ground wires are needed because all ground connections are made with plated through-holes to the backside of the device. Refer the Absolute Maximum Ratings table for allowed DC and thermal conditions Assembly Techniques The backside of the MMIC chip is RF ground. For microstrip applications the chip should be attached directly to the ground plane (e.g. circuit carrier or heatsink) using electrically conductive epoxy [1,2] For best performance, the topside of the MMIC should be brought up to the same height as the circuit surrounding it. This can be accomplished by mounting a gold plate metal shim (same length and width as the MMIC) under the chip which is of correct thickness to make the chip and adjacent circuit the same height. The amount of epoxy used for the chip and/or shim attachment should be just enough to provide a thin fillet around the bottom perimeter of the chip or shim. The ground plan should be free of any residue that may jeopardize electrical or mechanical attachment. The location of the RF bond pads is shown in Figure 12. Note that all the RF input and output ports are in a Ground-Signal-Ground configuration. RF connections should be kept as short as reasonable to minimize performance degradation due to undesirable series inductance. A single bond wire is normally sufficient for signal connections, however double bonding with.7 mil gold wire or use of gold mesh is recommended for best performance, especially near the high end of the frequency band. Thermosonic wedge bonding is preferred method for wire attachment to the bond pads. Gold mesh can be attached using a 2 mil round tracking tool and a tool force of approximately 22 grams and a ultrasonic power of roughly db for a duration of 76 ± 8 ms. The guided wedge at an untrasonic power level of 64 db can be used for.7 mil wire. The recommended wire bond stage temperature is ± 2 C. Caution should be taken to not exceed the Absolute Maximum Rating for assembly temperature and time. The chip is 1um thick and should be handled with care. This MMIC has exposed air bridges on the top surface and should be handled by the edges or with a custom collet (do not pick up the die with a vacuum on die center). This MMIC is also static sensitive and ESD precautions should be taken. Notes: 1. Ablebond 84-1 LM1 silver epoxy is recommended. 2. Eutectic attach is not recommended and may jeopardize reliability of the device. Vcc Out In Figure 19. AMMC-622 Schematic 7
7 14 17 8 7 33 33 9 16 Figure 2. AMMC-622 Bonding pad locations To V DD DC supply 1 pf Capacitors V D1 V D2 RF INPUT AMMC-622 RF OUTPUT Gold Plated Shim (Optional) Figure 21. AMMC-622 Assembly diagram Ordering Information: AMMC-622-W1 = 1 devices per tray AMMC-622-W = devices per tray For product information and a complete list of distributors, please go to our web site: www.avagotech.com Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies Limited in the United States and other countries. Data subject to change. Copyright 2-214 Avago Technologies Limited. All rights reserved. Obsoletes AV1-218EN AV2-1287EN - November 18, 214