Vishay High Power Products TO-247AC modified HEXFRED Base common cathode 2 1 3 Cathode Anode FEATURES Ultrafast recovery Ultrasoft recovery Very low I RRM Very low Q rr Specified at operating conditions Compliant to RoHS directive 22/95/EC Designed and qualified for industrial level BENEFITS Reduced RFI and EMI Reduced power loss in diode and switching transistor Higher frequency operation Reduced snubbing Reduced parts count PRODUCT SUMMARY V R 6 V V F at 15 A at 25 C 1.7 V (AV) 15 A t rr (typical) 19 ns (maximum) 15 C Q rr (typical) 8 nc di (rec)m /dt (typical) at 125 C 16 A/μs I RRM (typical) 4. A DESCRIPTION HFA15PB6 is a state of the art ultrafast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 6 V and 15 A continuous current, the HFA15PB6 is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultrafast recovery time, the HEXFRED product line features extremely low values of peak recovery current (I RRM ) and does not exhibit any tendency to snap-off during the t b portion of recovery. The HEXFRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The HEXFRED HFA15PB6 is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Cathode to anode voltage V R 6 V Maximum continuous forward current T C = C 15 Single pulse forward current SM 15 A Maximum repetitive forward current RM 6 T C 74 Maximum power dissipation P D T C = C 29 W Operating junction and storage temperature range, T Stg - 55 to + 15 C * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 9452 For technical questions, contact: diodestech@vishay.com www.vishay.com Revision: 9-Nov-9 1
Vishay High Power Products HEXFRED ELECTRICAL SPECIFICATIONS ( unless otherwise specified) Maximum forward voltage V FM PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Cathode to anode breakdown voltage V BR I R = μa 6 - - = 3 A See fig. 1-1.5 2. - 1.3 1.7 V, - 1.2 1.6 Maximum reverse V R = V R rated - 1. I RM See fig. 2 μa leakage current, V R =.8 x V R rated - 4 Junction capacitance C T See fig. 3-25 5 pf Series inductance L S Measured lead to lead 5 mm from package body - 12 - nh DYNAMIC RECOVERY CHARACTERISTICS ( unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Reverse recovery time See fig. 5, Peak recovery current See fig. 6 Reverse recovery charge See fig. 7 Peak rate of fall of recovery current during t b See fig. 8 t rr = 1. A, d /dt = 2 A/μs, V R = 3 V - 19 - t rr1-42 6 t rr2-74 12 I RRM1-4. 6. I RRM2-6.5 Q rr1 d /dt = 2 A/μs - 8 18 Q rr2-22 6 di (rec)m /dt1-188 - di (rec)m /dt2-16 - ns A nc A/μs THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Lead temperature T lead.63" from case (1.6 mm) for s - - 3 C Thermal resistance, junction to case R thjc - - 1.7 Thermal resistance, junction to ambient Thermal resistance, case to heatsink Weight Mounting torque R thja Typical socket mount - - 4 R thcs Mounting surface, flat, smooth and greased -.25 - K/W - 6. - g -.21 - oz. Marking device Case style TO-247AC modified (JEDEC) HFA15PB6 6. (5.) - 12 () kgf cm (lbf in) www.vishay.com For technical questions, contact: diodestech@vishay.com Document Number: 9452 2 Revision: 9-Nov-9
HEXFRED Vishay High Power Products - Instantaneous Forward Current (A) = 15 C 1 1. 1.2 1.4 1.6 1.8 2. 2.2 2.4 I R - Reverse Current (μa) 1.1.1 = 15 C 2 3 4 5 6 V FM - Forward Voltage Drop (V) V R - Reverse Voltage (V) Fig. 1 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current Fig. 2 - Typical Reverse Current vs. Reverse Voltage C T - Junction Capacitance (pf) V R - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Z thjc - Thermal Response 1.1 D =.5 D =.2 D =. D =.5 D =.2 D =.1 Single pulse (thermal response).1.1.1.1.1.1 1 t 1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance Z thjc Characteristics P DM Notes: 1. Duty factor D = t 1 /t 2 2. Peak = P DM x Z thjc + T C t 1 t 2 Document Number: 9452 For technical questions, contact: diodestech@vishay.com www.vishay.com Revision: 9-Nov-9 3
Vishay High Power Products HEXFRED 8 = 3 A = 5 A 8 6 V R = 2 V t rr (ns) 6 4 Q rr (nc) 4 = 3 A = 5 A 2 d /dt (A/µs) Fig. 5 - Typical Reverse Recovery Time vs. d /dt 2 d /dt (A/µs) Fig. 7 - Typical Stored Charge vs. d /dt I rr (A) 25 2 15 V R = 2 V = 3 A = 15 A = 5 A di (rec)m /dt (A/µs) = 3 A = 5 A 5 d /dt (A/µs) Fig. 6 - Typical Recovery Current vs. d /dt d /dt (A/µs) Fig. 8 - Typical di (rec)m /dt vs. d /dt www.vishay.com For technical questions, contact: diodestech@vishay.com Document Number: 9452 4 Revision: 9-Nov-9
HEXFRED Vishay High Power Products L = 7 µh.1 Ω D.U.T. d /dt adjust G D IRFP25 S Fig. 9 - Reverse Recovery Parameter Test Circuit (3) t rr t a tb (2) I RRM (4) Q rr.5 I RRM di (rec)m /dt (5).75 I RRM (1) d /dt (1) d /dt - rate of change of current through zero crossing (2) I RRM - peak reverse recovery current (3) t rr - reverse recovery time measured from zero crossing point of negative going to point where a line passing through.75 I RRM and.5 I RRM extrapolated to zero current. (4) Q rr - area under curve defined by t rr and I RRM t rr x I Q RRM rr = 2 (5) di (rec)m /dt - peak rate of change of current during t b portion of t rr Fig. - Reverse Recovery Waveform and Definitions Document Number: 9452 For technical questions, contact: diodestech@vishay.com www.vishay.com Revision: 9-Nov-9 5
Vishay High Power Products HEXFRED ORDERING INFORMATION TABLE Device code HF A 15 PB 6 PbF 1 2 3 4 5 6 1 - HEXFRED family 2 - Process designator: A = Electron irradiated B = Platinum diffused 3 - Current rating (15 = 15 A) 4 - Package outline (PB = TO-247, 2 pins) 5 - Voltage rating (6 = 6 V) 6 - None = Standard production PbF = Lead (Pb)-free Dimensions Part marking information LINKS TO RELATED DOCUMENTS www.vishay.com/doc?95253 www.vishay.com/doc?95255 www.vishay.com For technical questions, contact: diodestech@vishay.com Document Number: 9452 6 Revision: 9-Nov-9
Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 9 www.vishay.com Revision: 18-Jul-8 1