Vishay High Power Products 60EPU04 Ultrafast Soft Recovery Diode, 60APU04 FEATURES Ultrafast recovery Cathode to base PRODUCT SUMMARY t rr (typical) (AV) 2 1 3 Cathode Anode TO-247AC modified Cathode to base 2 1 3 Anode Anode TO-247AC 50 ns 60 A 400 V 175 C operating junction temperature Designed and qualified for industrial level BENEFITS Reduced RFI and EMI Higher frequency operation Reduced snubbing Reduced parts count DESCRIPTION/APPLICATIONS These diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for HF welding, power converters and other applications where switching losses are not significant portion of the total losses. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Cathode to anode voltage 400 V Continuous forward current (AV) T C = 127 C 60 Single pulse forward current SM T C 600 A Maximum repetitive forward current RM Square wave, 20 khz 120 Operating junction and storage temperatures, T Stg - 55 to 175 C ELECTRICAL SPECIFICATIONS ( unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, blocking voltage V BR, I R = µa 400 - - Forward voltage V F = 60 A, = 175 C - 0.87 1.03 = 60 A - 1.05 1.25 V = 60 A, = 125 C - 0.93 1. = rated - - 50 µa Reverse leakage current I R = 150 C, = rated - - 2 ma Junction capacitance C T = 400 V - 50 - pf Series inductance L S Measured lead to lead 5 mm from package body - 3.5 - nh Document Number: 93020 For technical questions, contact: diodes-tech@vishay.com www.vishay.com Revision: 02-Jun-08 1
Vishay High Power Products Ultrafast Soft Recovery Diode, DYNAMIC RECOVERY CHARACTERISTICS (T C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Reverse recovery time t rr - 85 - ns = 1 A, d /dt = 200 A/µs, = 30 V - 50 60 = 125 C - 145 - Peak recovery current I RRM T = 60 A J - 8.8 - d /dt = 200 A/µs = 125 C = 200 V - 15.4 - A - 375 - Reverse recovery charge Q rr = 125 C - 1120 - nc THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Thermal resistance, R thjc - - 0.70 junction to case K/W Thermal resistance, Mounting surface, flat, smooth R thcs - 0.2 - case to heatsink and greased Weight Mounting torque - 5.5 - g - 0.2 - oz. 1.2 () - 2.4 (20) N m (lbf in) Marking device Case style TO-247AC modified Case style TO-247AC 60EPU04 60APU04 www.vishay.com For technical questions, contact: diodes-tech@vishay.com Document Number: 93020 2 Revision: 02-Jun-08
Ultrafast Soft Recovery Diode, Vishay High Power Products - Instantaneous Forward Current (A) = 175 C = 125 C I R - Reverse Current (µa) 1 0.1 0.01 = 175 C = 125 C 1 0 0.5 1 1.5 2 2.5 V FM - Forward Voltage Drop (V) Fig. 1 - Typical Forward Voltage Drop Characteristics 0.001 0 200 300 - Reverse Voltage (V) 400 Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage C T - Junction Capacitance (pf) 0 - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Z thjc - Thermal Impedance ( C/W) 1 0.1 Single pulse (thermal resistance) D = 0.50 D = 0.20 D = 0. D = 0.05 D = 0.02 D = 0.01 2. Peak = P DM x Z thjc + T C 0.01 0.00001 0.0001 0.001 0.01 0.1 1 t 1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance Z thjc Characteristics P DM Notes: 1. Duty factor D = t 1 /t 2 t 1 t 2.. Document Number: 93020 For technical questions, contact: diodes-tech@vishay.com www.vishay.com Revision: 02-Jun-08 3
Vishay High Power Products Ultrafast Soft Recovery Diode, Allowable Case Temperature ( C) 180 160 140 120 Square wave (D = 0.50) 80 % rated applied See note (1) DC 80 0 20 40 60 80 t rr (ns) 200 180 160 140 120 80 = 400 V = 125 C = 120 A = 60 A = 40 A 60 (AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current d /dt (A/µs) Fig. 7 - Typical Reverse Recovery Time vs. d /dt Average Power Loss (W) 80 60 40 20 DC RMS limit D = 0.01 D = 0.02 D = 0.05 D = 0. D = 0.20 D = 0.50 Q rr (nc) 3500 3000 2500 2000 1500 500 = 400 V = 125 C = 40 A = 60 A = 120 A 0 0 20 40 60 80 (AV) - Average Forward Current (A) Fig. 6 - Forward Power Loss Characteristics 0 d /dt (A/µs) Fig. 8 - Typical Stored Charge vs. d /dt Note (1) Formula used: T C = - (Pd + Pd REV ) x R thjc ; Pd = Forward power loss = (AV) x V FM at ((AV) /D) (see fig. 6); Pd REV = Inverse power loss = 1 x I R (1 - D); I R at 1 = 80 % rated www.vishay.com For technical questions, contact: diodes-tech@vishay.com Document Number: 93020 4 Revision: 02-Jun-08
Ultrafast Soft Recovery Diode, Vishay High Power Products = 200 V L = 70 µh 0.01 Ω D.U.T. d /dt adjust G D IRFP250 S Fig. 9 - Reverse Recovery Parameter Test Circuit (3) t rr 0 t a tb (2) I RRM (4) Q rr 0.5 I RRM di (rec)m /dt (5) 0.75 I RRM (1) d /dt (1) d /dt - rate of change of current through zero crossing (2) I RRM - peak reverse recovery current (3) t rr - reverse recovery time measured from zero crossing point of negative going to point where a line passing through 0.75 I RRM and 0.50 I RRM extrapolated to zero current. (4) Q rr - area under curve defined by t rr and I RRM t rr x I Q RRM rr = 2 (5) di (rec)m /dt - peak rate of change of current during t b portion of t rr Fig. - Reverse Recovery Waveform and Definitions Document Number: 93020 For technical questions, contact: diodes-tech@vishay.com www.vishay.com Revision: 02-Jun-08 5
Vishay High Power Products Ultrafast Soft Recovery Diode, ORDERING INFORMATION TABLE Device code 60 E P U 04-1 2 3 4 5 6 1 - Current rating (60 = 60 A) 2 - Circuit configuration: E = Single diode, 2 pins A = Single diode, 3 pins 3 - Package: P = TO-247AC modified 4 - Type of silicon: U = Ultrafast recovery 5 - Voltage rating (04 = 400 V) 6 - None = Standard production PbF = Lead (Pb)-free Dimensions Part marking information LINKS TO RELATED DOCUMENTS http://www.vishay.com/doc?95001 http://www.vishay.com/doc?95006 www.vishay.com For technical questions, contact: diodes-tech@vishay.com Document Number: 93020 6 Revision: 02-Jun-08
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