PD-9732 RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-.5) 2N7624U3 IRHLNJ79734 6V, P-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHLNJ79734 K Rads (Si).72Ω 22A* IRHLNJ79334 3K Rads (Si).72Ω 22A* SMD-.5 International Rectifier s R7 TM Logic Level Power MOSFETs provide simple solution to interfacing CMOS and TTL control circuits to power devices in space and other radiation environments. The threshold voltage remains within acceptable operating limits over the full operating temperature and post radiation. This is achieved while maintaining single event gate rupture and single event burnout immunity. These devices are used in applications such as current boost low signal source in PWM, voltage comparator and operational amplifiers. Features: n 5V CMOS and TTL Compatible n Fast Switching n Single Event Effect (SEE) Hardened n Low Total Gate Charge n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Ceramic Package n Surface Mount n Light Weight Absolute Maximum Ratings Parameter ID @VGS = -4.5V,TC = 25 C Continuous Drain Current -22* ID @VGS = -4.5V,TC = C Continuous Drain Current -4.9 IDM Pulsed Drain Current À -88 Units PD @ TC = 25 C Max. Power Dissipation 57 W Linear Derating Factor.45 W/ C VGS Gate-to-Source Voltage ± V EAS Single Pulse Avalanche Energy Á 2 mj IAR Avalanche Current À -22 A EAR Repetitive Avalanche Energy À 5.7 mj dv/dt Peak Diode Recovery dv/dt  -2.3 V/ns TJ Operating Junction -55 to 5 TSTG Storage Temperature Range Pckg. Mounting Surface Temp. 3 (for 5s) C Weight. (Typical) g * Current is limited by package For footnotes refer to the last page www.irf.com A 5/6/8
Electrical Characteristics @ Tj = 25 C (Unless Otherwise Specified) Parameter Min Typ Max Units Test Conditions BVDSS Drain-to-Source Breakdown Voltage -6 V VGS = V, ID = -25µA BVDSS/ TJ Temperature Coefficient of Breakdown -.55 V/ C Reference to 25 C, ID = -.ma Voltage RDS(on) Static Drain-to-Source On-State.72 Ω VGS = -4.5V, ID = -4.9A Ã Resistance VGS(th) Gate Threshold Voltage -. -2. V VDS = VGS, ID = -25µA VGS(th)/ TJ Gate Threshold Voltage Coefficient -3.5 mv/ C gfs Forward Transconductance 6 S VDS = -V, IDS = -4.9A Ã IDSS Zero Gate Voltage Drain Current -. VDS = -48V,VGS = V - µa VDS = -48V, VGS = V, TJ = 25 C IGSS Gate-to-Source Leakage Forward - na VGS = -V IGSS Gate-to-Source Leakage Reverse VGS = V Qg Total Gate Charge 36 VGS = -4.5V, ID = -22A Qgs Gate-to-Source Charge 9. nc VDS = -3V Qgd Gate-to-Drain ( Miller ) Charge 8 td(on) Turn-On Delay Time 32 VDD = -3V, ID = -22A, tr Rise Time 25 VGS = -5.V, RG = 7.5Ω ns td(off) Turn-Off Delay Time 95 tf Fall Time 85 LS + LD Total Inductance 4. nh Measured from the center of drain pad to center of source pad Ciss Input Capacitance 226 VGS = V, VDS = -25V Coss Output Capacitance 583 pf f =.MHz Crss Reverse Transfer Capacitance 9 Rg Gate Resistance 9.4 Ω f =.MHz, open drain Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units Test Conditions IS Continuous Source Current (Body Diode) -22* ISM Pulse Source Current (Body Diode) À -88 A VSD Diode Forward Voltage -5. V Tj = 25 C, IS = -22A, VGS = V Ã trr Reverse Recovery Time ns Tj = 25 C, IF = -22A, di/dt -A/µs QRR Reverse Recovery Charge 32 nc VDD -25V Ã ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. * Current is limited by package Thermal Resistance Parameter Min Typ Max Units Test Conditions RthJC Junction-to-Case 2.2 C/W Note: Corresponding Spice and Saber models are available on International Rectifier Web site. For footnotes refer to the last page 2 www.irf.com
Radiation Characteristics International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table. Electrical Characteristics @ Tj = 25 C, Post Total Dose Irradiation ÄÅ Parameter Upto 3K Rads (Si) Units Test Conditions Min Max BV DSS Drain-to-Source Breakdown Voltage -6 V V GS = V, I D = -25µA VGS(th) Gate Threshold Voltage -. -2. VGS = V DS, I D = -25µA I GSS Gate-to-Source Leakage Forward - na V GS = -V I GSS Gate-to-Source Leakage Reverse V GS = V I DSS Zero Gate Voltage Drain Current -. µa V DS = -48V, V GS = V R DS(on) Static Drain-to-Source On-State Resistance (TO-3).72 Ω VGS = -4.5V, I D = -4.9A R DS(on) Static Drain-to-Source On-state Resistance (SMD-.5).72 Ω VGS = -4.5V, I D = -4.9A V SD Diode Forward Voltage -5. V VGS = V, I D = -22A. Part numbers IRHLNJ79734, IRHLNJ79334 International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Typical Single Event Effect Safe Operating Area Ion LET Energy Range VDS (V) (MeV/(mg/cm 2 )) (MeV) (µm) @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= V V 2V 3V 4V 5V 6V 7V Kr 37.3 4 48.6-6 -6-6 -6-6 -6-5 -25 Xe 63.3 435 38.4-6 -6-6 -6-6 -25-25 - Au 9 48 8.4-6 -6-6 -5-4 -4 - - VDS -7-6 -5-4 -3-2 - 2 3 4 5 6 7 VGS Kr Xe Au For footnotes refer to the last page Fig a. Typical Single Event Effect, Safe Operating Area www.irf.com 3
-I D, Drain-to-Source Current (A) -I D, Drain-to-Source Current (A) R DS(on), Drain-to-Source On Resistance (Normalized) -I D, Drain-to-Source Current (A) VGS TOP -V -5.V -4.5V -4.V -3.5V -3.V -2.5V BOTTOM -2.3V -2.3V VGS TOP -V -5.V -4.5V -4.V -3.V -2.7V -2.5V BOTTOM -2.3V -2.3V 2µs PULSE WIDTH Tj = 25 C. -V DS, Drain-to-Source Voltage (V) 2µs PULSE WIDTH Tj = 5 C. -V DS, Drain-to-Source Voltage (V) Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics 2. I D = -22A T J = 5 C.5 T J = 25 C..5 V DS = -25V 6µs PULSE 5 WIDTH 2 2.5 3 3.5 4 4.5 5 V GS = -4.5V. -6-4 -2 2 4 6 8 2 4 6 -V GS, Gate-to-Source Voltage (V) T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 4 www.irf.com
-V (BR)DSS, Drain-to-Source Breakdown Voltage (V) -V GS(th) Gate threshold Voltage (V) R DS(on), Drain-to -Source On Resistance (mω) R DS (on), Drain-to -Source On Resistance ( mω) 6 4 I D = -22A 4 3 2 8 6 4 2 T J = 5 C T J = 25 C 2 4 6 8 2 2 9 8 7 6 5 4 3 T J = 5 C T J = 25 C Vgs = -4.5V 2 3 4 5 6 7 8 -V GS, Gate -to -Source Voltage (V) -I D, Drain Current (A) Fig 5. Typical On-Resistance Vs Gate Voltage Fig 6. Typical On-Resistance Vs Drain Current 75 I D = -.ma 2.5 7 2..5 65. I D = -5µA 6.5 I D = -25µA I D = -.ma I D = -5mA 55-6 -4-2 2 4 6 8 2 4 6 T J, Temperature ( C ). -6-4 -2 2 4 6 8 2 4 6 T J, Temperature ( C ) Fig 7. Typical Drain-to-Source Breakdown Voltage Vs Temperature Fig 8. Typical Threshold Voltage Vs Temperature www.irf.com 5
C, Capacitance (pf) -I SD, Reverse Drain Current (A) -I D, Drain Current (A) -V GS, Gate-to-Source Voltage (V) 36 32 28 V GS = V, f = MHz C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd 2 I D = -22A V DS = -48V VDS = -3V VDS = -2V 24 C iss 8 2 6 6 2 C oss 4 8 4 C rss 2 FOR TEST CIRCUIT SEE FIGURE 7 2 3 4 5 6 7 8 -V DS, Drain-to-Source Voltage (V) Q G, Total Gate Charge (nc) Fig 9. Typical Capacitance Vs. Drain-to-Source Voltage Fig. Typical Gate Charge Vs. Gate-to-Source Voltage 25 LIMITED BY PACKAGE 2 T J = 5 C 5 T J = 25 C 5. V GS = V 2 3 4 5 6 -V SD, Source-to-Drain Voltage (V) 25 5 75 25 5 T C, Case Temperature ( C) Fig. Typical Source-to-Drain Diode Forward Voltage Fig 2. Maximum Drain Current Vs. Case Temperature 6 www.irf.com
-I D, Drain-to-Source Current (A) E AS, Single Pulse Avalanche Energy (mj) 24 I D OPERATION IN THIS AREA LIMITED BY R DS (on) 8 TOP -9.8A -3.9A BOTTOM -22A µs 2 Tc = 25 C Tj = 5 C Single Pulse ms ms 6 25 5 75 25 5 -V DS, Drain-to-Source Voltage (V) Starting T J, Junction Temperature ( C) Fig 3. Maximum Safe Operating Area Fig 4. Maximum Avalanche Energy Vs. Drain Current D =.5.2 P DM Thermal Response ( Z thjc )....2.5. SINGLE PULSE ( THERMAL RESPONSE ) Notes:. Duty Factor D = t/t2 2. Peak Tj = P dm x Zthjc + Tc E-5.... t, Rectangular Pulse Duration (sec) t t 2 Fig 5. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 7
V DS L I AS R G -2V V GS tp D.U.T IAS.Ω DRIVER - + V DD A 5V tp V (BR)DSS Fig 6a. Unclamped Inductive Test Circuit Fig 6b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. -4.5V Q G -2V.2µF 5KΩ.3µF Q GS Q GD D.U.T. V + DS - V G V GS -3mA Charge I G I D Current Sampling Resistors Fig 7a. Basic Gate Charge Waveform Fig 7b. Gate Charge Test Circuit R G V GS V DS R D D.U.T. V GS t d(on) t r t d(off) t f % + - V DD V GS Pulse Width µs Duty Factor. % 9% V DS Fig 8a. Switching Time Test Circuit Fig 8b. Switching Time Waveforms 8 www.irf.com
Footnotes: À Repetitive Rating; Pulse width limited by maximum junction temperature. Á VDD = -25V, starting TJ = 25 C, L =.49mH Peak IL = -22A, VGS = -V Â ISD -22A, di/dt -35A/µs, VDD -6V, TJ 5 C Ã Pulse width 3 µs; Duty Cycle 2% Ä Total Dose Irradiation with VGS Bias. - volt VGS applied and VDS = during irradiation per MIL-STD-75, method 9, condition A. Å Total Dose Irradiation with VDS Bias. -48 volt VDS applied and VGS = during irradiation per MlL-STD-75, method 9, condition A. Case Outline and Dimensions SMD-.5 PAD ASSIGNMENTS = DRAIN 2 = GATE 3 = SOURCE IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 9245, USA Tel: (3) 252-75 IR LEOMINSTER : 25 Crawford St., Leominster, Massachusetts 453, USA Tel: (978) 534-5776 TAC Fax: (3) 252-793 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 5/28 www.irf.com 9