DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION The is suitable for converter of ECM. FEATURES Compact package High forward transfer admittance µs TYP. (IDSS = µa) 16 µs TYP. (IDSS = 2 µa) Includes diode and high resistance at G - S ORDERING INFORMATION PART NUMBER PACKAGE SC-75 (USM) 1.6 ±.1.8 ±.1 PACKAGE DRAWING (Unit: mm) D.3 ±.5.2 +.1 G.5.5 1. 1.6 ±.1 S.6.75 ±.5.1 +.1.5 to.1 ABSOLUTE MAXIMUM RATINGS (TA = 25 C) Drain to Source Voltage Note1 VDSX 2 V Gate to Drain Voltage VGDO 2 V Drain Current ID ma Gate Current IG ma Total Power Dissipation Note2 PT 2 mw Junction Temperature Tj 125 C Storage Temperature Tstg 55 to +125 C EQUIVALENT CIRCUIT Drain Gate Source Notes 1. VGS = 1. V 2. Mounted on ceramic substrate of 3. cm 2 x.64 mm Remark Please take care of ESD (Electro Static Discharge) when you handle the device in this document. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. Date Published Printed in Japan D15941EJ1VDS (1st edition) January 22 NS CP(K) 22
ELECTRICAL CHARACTERISTICS (TA = 25 C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Cut-off Current IDSS VDS = 5. V, VGS = V 4 6 µa Gate Cut-off Voltage VGS(off) VDS = 5. V, ID = 1. µa.1 1. V Forward Transfer Admittance yfs1 VDS = 5. V, ID = 3 µa, f = 1. khz 35 µs Forward Transfer Admittance yfs2 VDS = 5. V, VGS = V, f = 1. khz 35 µs Input Capacitance Ciss VDS = 5. V, VGS = V, f = 1. MHz 7. 8. pf Noise Voltage NV See Test Circuit 1.8 3. µv IDSS RANK MARKING J2 J3 J4 J5 J6 J7 IDSS (µa) 4 to 7 6 to 1 9 to 18 15 to 3 2 to 45 3 to 6 NOISE VOLTAGE TEST CIRCUIT +4.5 V R = 1 kω JIS A NV (r.m.s) C = pf 2 Data Sheet D15941EJ1VDS
TYPICAL CHARACTERISTICS (TA = 25 C) dt - Derating Factor - % 8 6 4 2 DERATING FACTOR OF POWER DISSIPATION IG - Gate Current - µ A GATE TO SOURCE CURRENT vs. GATE TO SOURCE VOLTAGE 4 1..8.6.4.2 2 3 3 2.2.4.6.8 1. 2 4 6 8 12 14 16 TA - Ambient Temperature - C 4 VGS - Gate to Source Voltage - V ID - Drain Current - ma 1. VDS = 5 V.8.6.4.2 GATE TO SOURCE VOLTAGE µ µ IDSS = 3 A = IDSS = 2 A IDSS A µ CiSS - Input Capacitance - pf 5 2 5 2 INPUT CAPACITANCE vs. VDS = V f = 1. MHz.6.4.2 +.2 VGS - Gate to Source Voltage - V 1 1 2 5 2 5 VGS (off) - Gate to Source Cut-off Voltage - V yfs - Forward Transfer Admittance - µ S GATE TO SOURCE CUT-OFF VOLTAGE AND FORWARD TRANSFER ADMITTANCE vs. ZERO-GATE VOLTAGE DRAIN CURRENT CO-RELATION. 5. 2. 1..5.2.1.5.2.1 yfs VGS (off) VDS = 5 V 2 5 2 5 Zero-Gate Voltage Drain Current - µ A Data Sheet D15941EJ1VDS 3
25 RANK: J2.15 V 3 RANK: J3.15 V 2. V 15.5 V VGS 5 = V.5 V.15 V. V 2 4 6 8 24. V 18.5 V 12 VGS = V 6.5 V.15 V. V 2 4 6 8 4 RANK: J4.15 V 5 RANK: J5.15 V 32. V 24.5 V 16 VGS = V 8.5 V. V.15 V 2 4 6 8 4. V 3.5 V 2 VGS = V.5 V. V.15 V 2 4 6 8 7 RANK: J6.15 V 9 RANK: J7.15 V 56. V 42.5 V VGS = V 28.5 V 14. V.15 V 2 4 6 8 72. V.5 V 54 VGS = V 36.5 V. V 18.15 V 2 4 6 8 4 Data Sheet D15941EJ1VDS
[MEMO] Data Sheet D15941EJ1VDS 5
[MEMO] 6 Data Sheet D15941EJ1VDS
[MEMO] Data Sheet D15941EJ1VDS 7
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