RF Power Field Effect Transistor LDMOS, 8 17, 15W, 26V Features Designed for broadband commercial applications up to 1.7GHz High, High Efficiency and High Linearity Typical P1dB performance at 96, 26Vdc, CW Typical Power Output: 16.5W : 16.5dB Efficiency: 5% :1 VSWR Ruggedness at 15W, 26Vdc, 96 Package Style Maximum Ratings Parameter Symbol Rating Units Drain Source Voltage V DSS 65 V dc Gate Source Voltage V GS +, - V dc Total Power Dissipation @ T C = 25 C P D 31.25 W Storage Temperature T STG -65 to +15 C Junction Temperature T J 15 C Thermal Characteristics Characteristic Symbol Max Unit Thermal Resistance, Junction to Case R ΘJC 4 ºC/W NOTE CAUTION MOS devices are susceptible to damage from electrostatic charge. Precautions in handling and packaging MOS devices should be observed.
DC CHARACTERISTICS @ 25ºC Characteristic Symbol Min Typ Max Unit Drain-Source Breakdown Voltage (V GS = Vdc, I D = 3 µadc) Gate Threshold Voltage (V ds = 26 Vdc, I d = ma) Gate Quiescent Voltage (V ds = 26 Vdc, I d = ma) Drain-Source On-Voltage (V gs = Vdc, I d = 1 A) V (BR)DSS 65 Vdc V GS(th) 2 5 Vdc V DS(Q) 3 5 Vdc V DS(on).25 Vdc RF FUNCTIONAL TESTS @ 25ºC (In M/A-COM Test Fixture) (1) Common Source Amplifier (V DD = 26 Vdc, I DQ = ma, f = 96, P OUT = 15 W) Drain Efficiency (V DD = 26 Vdc, I DQ = ma, f = 96, P OUT = 15 W) Input Return Loss (V DD = 26 Vdc, I DQ = ma, f = 96, P OUT = 15 W) G P 17 db EFF (ŋ) 5 % IRL - db Output VSWR Tolerance (V DD = 26 Vdc, I DQ = ma, f = 96, P OUT = 15 W, VSWR = :1, All Phase Angles at Frequency of Tests) Ψ No Degradation In Output Power Before and After Test Common Source Amplifier (V DD = 26 Vdc, I DQ = ma, f = 167, P OUT = 15 W) Drain Efficiency (V DD = 26 Vdc, I DQ = ma, f = 167, P OUT = 15 W) Input Return Loss (V DD = 26 Vdc, I DQ = ma, f = 167, P OUT = 15 W) G P 12.5 db EFF (ŋ) 5 % IRL - db (1) Device specifications obtained on a Production Test Fixture. 2
C1,C7 Tantalum Surface Mt. Cap., µf, V C2,C8 Ceramic Chip Capacitor,.1 µf C3,C9 Ceramic Chip Capacitor, pf C4,C,C12 Chip Capacitor, 33 pf ATCA C5 Chip Capacitor,. pf ATCA C6 Chip Capacitor, 11. pf ATCA C11 Chip Capacitor, 8.2 pf ATCA J1,J2 SMA Connector, Omni Spectra 52-56-2 L1 Inductor, 18 nh, CoilCraft 16CS L2 Inductor, 27 nh, CoilCraft 16CS P1,P2 Connector, AMP 64457-4 Q1 Transistor, R1 Chip Resistor (85), k Ohm Z1 Distributed Microstrip Element,.125 x.46 Z2 Distributed Microstrip Element,.56 x.46 Z3 Distributed Microstrip Element,.8 x.46 Z4 Distributed Microstrip Element,. x.178 Z5 Distributed Microstrip Element,.253 x.178 Z6 Distributed Microstrip Element,.315 x.178 Z7 Distributed Microstrip Element,.312 x.46 Z8 Distributed Microstrip Element,.613 x.46 Z9 Distributed Microstrip Element,.125 x.46 PC Board Rogers (RO4) Duroid,.: thick, Er=3.5, 1 Oz Copper Both Sides Figure 1. 9 96 Test Fixture Schematic Figure 2. 9 96 Test Fixture Component Layout 3
C1,C6 Tantalum Surface Mt. Cap., µf, V C2,C7 Ceramic Chip Capacitor,.1 µf C3,C8 Ceramic Chip Capacitor, pf C4,C9,C12 Chip Capacitor, 33 pf ATCA C5 Chip Capacitor, 4.7 pf ATCA C Chip Capacitor, 3. pf ATCA C11 Chip Capacitor, 3.3 pf ATCA J1,J2 SMA Connector, Omni Spectra 52-56-2 L1 Inductor, 18 nh, CoilCraft 16CS L2 Inductor, 27 nh, CoilCraft 16CS P1,P2 Connector, AMP 64457-4 Q1 Transistor, R1 Chip Resistor (85), k Ohm Z1 Distributed Microstrip Element,.125 x.46 Z2 Distributed Microstrip Element,.533 x.46 Z3 Distributed Microstrip Element,.8 x.26 Z4 Distributed Microstrip Element,.127 x.46 Z5 Distributed Microstrip Element,.146 x.46 Z6 Distributed Microstrip Element,.77 x.178 Z7 Distributed Microstrip Element,.211 x.178 Z8 Distributed Microstrip Element,.29 x.178 Z9 Distributed Microstrip Element,.9 x.46 Z Distributed Microstrip Element,.125 x.46 PC Board Rogers (RO4) Duroid,.: thick, Er=3.5, 1 Oz Copper Both Sides Figure 3. 16-167 Test Fixture Schematic Figure 4. 16 167 Test Fixture Component Layout 4
Figure 5. Pin Connections 5
19 19 CW, CW, I DQ I =ma DQ =ma 8 8 7 7 (db) (db) 18 18 17 17 16 16 15 15 14 14 96 96 925 925 13 13 96 96 925 925 12 12 3 3 32 32 4 4 42 42 44 44 Graph 1. 925, 96: CW Power and Drain Efficiency vs. Output Power 6 6 5 5 4 4 3 3 Drain Drain Efficiency Efficiency (%) (%) 25 25 3 3 4 4 - - I DQ I =ma, DQ =ma, khz khz Tone Tone Spacing Spacing - - -3-3 IMD IMD (dbc) (dbc) -4-4 -5-5 -6-6 -7-7 (96 (96 ) ) (96) (96) (925) (925) (925) (925) Graph 2. 925, 96 : 2 Tone Intermodulation Distortion vs. Output Power 6
(db) (db) 18 18 16 16 CW, CW, I DQ I =ma DQ =ma 14 14 12 12 8 8 6 6 167 167 16 4 16 4 167 167 2 2 16 16 3 3 32 32 4 4 42 42 6 6 55 55 5 5 45 45 4 4 3 3 25 25 15 15 Drain Drain Efficiency Efficiency (%) (%) Graph 3. 16, 167: CW Power and Drain Efficiency vs. Output Power IMD IMD (dbc) (dbc) - - - - -3-3 -4-4 -5-5 167, 167, khz khz Tone Tone Spacing Spacing ma ma ma ma 16mA 16mA 16mA 16mA -6-6 -7-7 33 33 37 37 39 39 Avg Avg Graph 4. 16, 167: 2 Tone Intermodulation Distortion vs. Output Power 7
Package Dimensions Test Fixture Circuit Dimensions M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. Visit www.macom.com for additional data sheets and product information. 8 North America: Tel. (8) 6-2266 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (14) 869 595, Fax+44 (14) 3