Transistors. electrons N P N holes. Base. An NPN device makes a transistor

Similar documents
Binary Outputs: Transistors Used as a Switch

Electronic Circuits - Tutorial 07 BJT transistor 1

Lecture (06) Bipolar Junction Transistor

Lecture 9. Bipolar Junction Transistor (BJT) BJT 1-1

EXPERIMENT 5 CURRENT AND VOLTAGE CHARACTERISTICS OF BJT

Physics of Bipolar Transistor

Lecture 14. Bipolar Junction Transistor (BJT) BJT 1-1

ECE 334: Electronic Circuits Lecture 2: BJT Large Signal Model

Figure1: Basic BJT construction.

การไบอ สทรานซ สเตอร. Transistors Biasing

7. Bipolar Junction Transistor

Chapter 3-2 Semiconductor devices Transistors and Amplifiers-BJT Department of Mechanical Engineering

Push-Pull Amplifiers

Chapter 4 DC Biasing BJTs. BJTs

Chapter 3: Bipolar Junction Transistors

Communication Microelectronics (W17)

Chapter 3 Bipolar Junction Transistors (BJT)

PHY405F 2009 EXPERIMENT 6 SIMPLE TRANSISTOR CIRCUITS

Lecture 3: Transistors

Bipolar Junction Transistors

Chapter 3. Bipolar Junction Transistors

Lecture (08) Bipolar Junction Transistor (2)

Electronic Devices, 9th edition Thomas L. Floyd. Input signal. R 1 and R 2 are selected to establish V B. If the V CE

CHAPTER 3 THE BIPOLAR JUNCTION TRANSISTOR (BJT)

Chapter 5 Transistor Bias Circuits

(a) BJT-OPERATING MODES & CONFIGURATIONS

Transistor Characteristics

COE/EE152: Basic Electronics. Lecture 5. Andrew Selasi Agbemenu. Outline

The first transistor. (Courtesy Bell Telephone Laboratories.)

Laboratory Four - Bipolar Junction Transistor (BJT)

Electronic Circuits Laboratory EE462G Lab #8. BJT Common Emitter Amplifier

Biasing. Biasing: The DC voltages applied to a transistor in order to turn it on so that it can amplify the AC signal.

SEMICONDUCTOR ELECTRONICS: MATERIALS, DEVICES AND SIMPLE CIRCUITS. Class XII : PHYSICS WORKSHEET

EE105 Fall 2014 Microelectronic Devices and Circuits. NPN Bipolar Junction Transistor (BJT)

14. Transistor Characteristics Lab

Transistors and Applications

Electronics II Lecture 2(a): Bipolar Junction Transistors

CHAPTER 3: BIPOLAR JUNCION TRANSISTOR DR. PHẠM NGUYỄN THANH LOAN

Exercises 6.1, 6.2, 6.3 (page 315 on 7 th edition textbook)

Chapter 6 DIFFERENT TYPES OF LOGIC GATES

Transistor fundamentals Nafees Ahamad

Chapter 6: Transistors and Gain

Tutorial 2 BJTs, Transistor Bias Circuits, BJT Amplifiers FETs and FETs Amplifiers. Part 1: BJTs, Transistor Bias Circuits and BJT Amplifiers

BIPOLAR JUNCTION TRANSISTORS (BJTs) Dr Derek Molloy, DCU

Chapter 4 Physics of Bipolar Transistors. EE105 - Spring 2007 Microelectronic Devices and Circuits. Structure and Symbol of Bipolar Transistor

KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept. 1 2 (CONT D - II) DIODE APPLICATIONS

Lecture 24: Bipolar Junction Transistors (1) Bipolar Junction Structure, Operating Regions, Biasing

Electronics Fundamentals BIPOLAR TRANSISTORS. Construction, circuit symbols and biasing examples for NPN and PNP junction transistors.

.dc Vcc Ib 0 50uA 5uA

Emitter base bias. Collector base bias Active Forward Reverse Saturation forward Forward Cut off Reverse Reverse Inverse Reverse Forward

EXPERIMENT 6 REPORT Bipolar Junction Transistor (BJT) Characteristics

An Introduction to Bipolar Junction Transistors. Prepared by Dr Yonas M Gebremichael, 2005

Prof. Paolo Colantonio a.a

Dr. Charles Kim ELECTRONICS I. Lab 5 Bipolar Junction Transistor (BJT) I TRADITIONAL LAB

Transistor Biasing Nafees Ahamad

UNIT-III Bipolar Junction Transistor

The Common Emitter Amplifier Circuit

REVIEW TRANSISTOR BIAS CIRCUIT

BJT Circuits (MCQs of Moderate Complexity)

ET215 Devices I Unit 4A

Lecture 12. Bipolar Junction Transistor (BJT) BJT 1-1

Downloaded from

b b Fig. 1 Transistor symbols

DEPARTMENT OF ELECTRONICS AND COMMUNICATION ENGINEERING III SEMESTER EC 6304 ELECTRONIC CIRCUITS I. (Regulations 2013)

C H A P T E R 6 Bipolar Junction Transistors (BJTs)

BFF1303: ELECTRICAL / ELECTRONICS ENGINEERING. Analog Electronics: Bipolar Junction Transistors

Transistors Used as an Amplifier

5.1 BJT Device Structure and Physical Operation

Introduction PNP C NPN C

ITT Technical Institute. ET215 Devices 1. Unit 6 Chapter 3, Sections

BJT. Bipolar Junction Transistor BJT BJT 11/6/2018. Dr. Satish Chandra, Assistant Professor, P P N College, Kanpur 1

Transistor electronic technologies

PHYS225 Lecture 6. Electronic Circuits

Basic Electronics: Diodes and Transistors. October 14, 2005 ME 435

Electronic Troubleshooting

Module 2. B.Sc. I Electronics. Developed by: Mrs. Neha S. Joshi Asst. Professor Department of Electronics Willingdon College, Sangli

Chapter Two "Bipolar Transistor Circuits"

4.2.2 Metal Oxide Semiconductor Field Effect Transistor (MOSFET)

جامعة اإلسكندرية كلية الهندسة قسم الهندسة الكهربية أبريل ٢٠١٥

Bipolar Junction Transistor (BJT) Basics- GATE Problems

Diode conducts when V anode > V cathode. Positive current flow. Diodes (and transistors) are non-linear device: V IR!

EE 330 Lecture 18. Characteristics of Finer Feature Size Processes. Bipolar Process

Electronics EECE2412 Spring 2017 Exam #2

SS8050. V CE =1V, I C =5mA V CE =1V, I C =100mA. 9.0 pf f=1mhz f T Current Gain Bandwidth Product V CE =10V, I C =50mA MHz

Bipolar Junction Transistors

ELEC 2210 EXPERIMENT 7 The Bipolar Junction Transistor (BJT)

EE 434 Lecture 21. MOS Amplifiers Bipolar Devices

TO-92 SOT-23 Mark: 83. TA = 25 C unless otherwise noted. Symbol Parameter Value Units

Transistors. Bipolar Junction transistors Principle of operation Characteristics. Field effect transistors Principle of operation Characteristics

STATIC CHARACTERISTICS OF TRANSISTOR

Experiment 6: Biasing Circuitry

ELECTRONICS LAB. PART 3

Operational Amplifiers

EXPERIMENT #3 TRANSISTOR BIASING

Chapter 3: TRANSISTORS. Dr. Gopika Sood PG Govt. College For Girls Sector -11, Chandigarh

Exam Model Answer. Question 1 (15 marks) Answer this question in the form of table. Choose the correct answer (only one answer is accepted).

The shape of the waveform will be the same, but its level is shifted either upward or downward. The values of the resistor R and capacitor C affect

Exercise 2: Collector Current Versus Base Current

Lab 4. Transistor as an amplifier, part 2

fiziks Institute for NET/JRF, GATE, IIT-JAM, M.Sc. Entrance, JEST, TIFR and GRE in Physics

Transcription:

NPN Transistor Theory Transistors Transistors are similar to diodes in that they are made up on ntype and ptype silicon. They differ in that Transistors are 3terminal devices (NPN or PNP), Transistors can operate in three states: off, active, and saturated, Transistors can be used as a switch to turn a device on and off electrically, and Transistors can be used as an amplifier (a current controlled current amplifier). An NPN is a threeterminal device: collector, base, and emitter. etween the emitter and the collector is a reverse biased PN junction. This prevents current flow from the collector to the emitter (electrons, being negatively charged, flow the opposite direction). The switch is open. If you apply current to the base to the emitter, however (which is a forward biased PN junction), holes flow from the Ptype base and electrons flow from the Ntype emitter. ollector electrons N P N holes ase mitter An NPN device makes a transistor If the base is very thin, most of the electrons pass through the base and appear at the collector, creating current flow from the emitter to the collector. (The switch is closed). If the doping on the emitter side is β times higher than the doping in the Ptype base, you get βtimes more electrons than holes. This creates current amplification. The symbol for a transistor is as follows. Note that the arrow represents the diode from base to emitter. It reminds you which way current flows. collector n c base p b n e emitter Symbol for an NPN transistor: the arrow indicated the diode from base to emitter 1 December 11, 14

Transistor VI haracteristics: The VI characteristic for a 394 NPN transistor is shown in the following figure. Three regions of operation are defined: Off: If there is no current in the base (Ibe = ), there is no current from collector to emitter. This is the "off" state of the transistor. Active: If you have enough voltage Vce, the collector current Ic is related to the base current as I c =βi b For the 394 transistor, note that when Ib = 1mA, Ic = ma. The current gain, β, is. Saturated: If for some reason you try to drive Vce <, Vce clips at about.2v. This is a physical limit for a transistor: negative voltage for Vce means the transistor is producing energy. That can't happen. Saturated Vce =.2V Active Ic = Ib Ib = 1.4mA Ib = 1.2mA Ib = 1.mA Ib =.8mA Ib =.6mA Ib =.4mA Ib =.2mA Off (Ice = ) 1 2 3 4 5 6 7 8 9 1 11 12 VI haracteristics for a 394 NPN transistor These three regions result in three models for a transistor one for each region. Off State: If the diode from the base to emitter is off, Ib =. If Ib =, then Ice = and the transistor is off. Off ondition: I be = Off Model: I be = I ce = 2 December 11, 14

Active State If the diode from base to emitter is on, Ib >. The transistor then amplifies this current as I c =βi b. The condition for being in the active region is I b > V ce >.2 Saturated State If you try to make Vce go negative, it clips at.2v. V ce =.2V When saturated, the current Ic is clipped I c <βi b Ib.7V Ib.7V Ib.2V NPN Transistor Off State Active State Saturated State Three models for an NPN transistor. Note that the arrow signifies the direction of the diode from the base. PNP Transistors: PNP transistors have a PN junction from the collector to the base. This changes the model as follows:.7v Ib beta Ib.7V.2V PNP Transistor Off State Active State Saturated State 3 December 11, 14

Again, note that the arrow indicated the direction of the diode relative to the base: current flows to the base from the emitter. Transistor Specs 394 NPN TIP112 NPN hfe (beta) 3 1, Ic (max) ma 4A Vce (max) V V Vce (sat).2v.9v cost (ea) $.3 $.59 Transistor ircuit Analysis: Determine the Qpoint (Vce, Ice) and the operating mode of the transistor for a) Vin =.5V b) Vin = 2.V, amd c) Vin = 3.5V 12V Ic Vin 2k b c Vce Ib e Sample ircuit: Assume a transistor with β= 4 December 11, 14

a) Vin =.5V: To turn on the diode from base to emitter, you need.7v. Vin isn't large enough to turn on this diode, so Ib = Ic = Vce = 12V The transistor is off. This is seen on the loadline as follows: Load Line 1 2 3 4 5 6 7 8 9 1 11 12 QPoint (off) Ib = When Vin =.5V, the transistor is off (Ic = ) b) Vin = 2.V. This is enough to turn on the diode from base to emitter. This results in Vb =.7V The base current, Ib, is then I b = 2V.7V 2kΩ = 65μA Assuming active mode I c =βi b = 65mA (diode is on) heck: To be in the active region,.2v < Vce < 12V: V ce = 12 I c = 5.5V Another way to check this is to see if Ic is less than its maximum value (when saturated) max(ic)= 12V.2V Ω = 118mA 65mA < 118mA, meaning this circuit is capable of driving 65mA. The Qpoint is thus ( Vce = 5.5V, Ice = 65mA) and the transistor is in the active region. 5 December 11, 14

Load Line QPoint ( active ) Ib = 65mA 1 2 3 4 5 6 7 8 9 1 11 12 When Vin = 2.V, the transistor is in the active region c) Vin = 3.5V. This is again enough to turn on the diode from base to emitter. The base current is then I b = 3.5V.7V 2kΩ = 1.4mA Assuming the transistor is in the active state This results in I c =βi b = ma V ce = 12 I c = 2.V You can't have a negative voltage instead Vce clips at.2v. Since it isn't off and isn't active, the transistor must be saturated Vce =.2V Ic is then clipped at its maximum value: I c = max (I c ) = 12V.2V = 118mA The Qpoint is thus ( Vce =.2V, Ice = 118mA) and the transistor is saturated. 6 December 11, 14

QPoint ( saturated ) Ib = ma Load Line 1 2 3 4 5 6 7 8 9 1 11 12 Load Line for Vin = 3.5V. In this case, βi b is more than the maximum possible, so Ic clips at its maximum: 118mA Note: When working with a circuit which has N diodes, there are 2 N possible circuits to analyze. It helps if you can guess which diodes are on and which ones are off so that you don't have to analyze all 2 N possible circuits. When working with a circuit with N transistors, there are 3 N possible circuits to analyze. It really helps to guess the right circuit in this case. To do this, it helps to know what the circuit is supposed to do: If the transistor is being used as a switch to turn a device on and off, the transistor is probably operating in the off and saturated (on) state. If the transistor is being used to amplify an A signal, it's probably operating in the active state. That is, assuming the designer knew what he/she was doing. 7 December 11, 14