MCR70x Series Pb Description PNPN Componants designed for high volume, low cost consumer applications such as temperature, light and speed control; process and remote control; and warning systems where reliability of operation is critical. Features Small Size Passivated Die Surface for Reliability and Uniformity Low Level Triggering and Holding Characteristics Recommend Electrical Replacement for C106 Surface Mount Package Case To Obtain DPK in Straight Lead ersion (Shipped in Sleeves): dd 1 Suffix to Componant Pin Out Number, i.e., MCR7061 UL Recognized compound meeting flammability rating -0. ESD Ratings: Human Body Model, 3B > 8000 Machine Model, C > 00 1 2 3 1 2 3 Pb Free Packages are vailable Functional Diagram G K dditional Information Datasheet Resources Samples
Maximum Ratings ( = 25 C unless otherwise noted) Rating Symbol alue Unit Peak Repetitive Off State oltage (Note 1) (T C = 0 to +110 C, Sine Wave, 50 to 60 Hz, R GK = 1 k Ω) MCR703 MCR706 MCR708 DRM, RRM 100 00 600 Peak Non-Repetitive Off State oltage (180º Conduction ngles; T C = 85ºC) MCR703 MCR706 MCR708 DSM 150 50 650 On State RMS Current (180º Conduction ngles; T C = 90ºC) I T(RMS).0 verage On-State Current T C = 0 to +90ºC (180º Conduction ngles) T C = +100ºC I T() 2.6 1.6 Non-Repetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz, = 110 C) (1/2 Cycle, Sine Wave 1.5 ms, = 110 C) I TSM 25 35 Circuit Fusing Consideration (t = 8.3 ms) I 2 t 2.6 ²sec Forward Peak Gate Power (Pulse Width µsec, T C = 90 C) I GM 0.5 W Forward Peak Gate Current (Pulse Width µsec, T C = 90 C) P GM 0.2 Forward verage Gate Power (t = 8.3 ms, TC = 90ºC) P G() 0.1 W Operating Junction Temperature Range -0 to +110 C Storage Temperature Range T stg -0 to +150 C Stresses exceeding Maximum Ratings may damage the Componant. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect Componant reliability. 1. DRM and RRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the Componants are exceeded. Thermal Characteristics* Rating Symbol alue Unit Thermal Resistance, Junction to Case R ƟJC 3.0 C/W Thermal Resistance, Junction to mbient (Note 2) R ƟJ 80 Maximum Lead Temperature for Soldering Purposes 1/8" from Case for 10 Seconds T L 260 C 2. Case when surface mounted on minimum pad sizes recommended.
Electrical Characteristics - OFF ( = 25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Peak Repetitive Forward or Reverse Blocking Current ( K = Rated DRM or RRM, R GK = 1 k Ω) = 25 C I DRM, - - 10 I RRM = 110 C - - 200 µ Electrical Characteristics - ON ( = 25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Peak Forward "On" oltage (I TM = 8.2 Peak, Pulse Width = 1 to 2 ms, 2% Duty Cycle) TM 2.2 Gate Trigger Current (Continuous dc) (Note 3) ( K = 12 ; R L = 2 Ω) = 25 C I GT _ 25 75 = 0 C 300 µ Gate Trigger oltage (Continuous dc) (Note 3) ( K = 12 ; R L = 2 Ω) = 25 C GT 0.8 = 0 C Gate Non-Trigger oltage (Note 3) ( K = 12 dc; R L = 100 Ω, T C =110º) GD 0.2 Holding Current ( K = 12 dc, R GK = 1 k Ω) T C = 25ºC (Initiating Current = 20 m) T C = 0ºC I H _ 5.0 10 m Peak Reverse Gate Blocking oltage (I GR = 10 µ) RGM 10 12.5 18 Peak Reverse Gate Blocking Current ( GR = 10 ) I RGM 1.2 µ Total Turn-On Time (Source oltage = 12, RS = 6 kq) (I TM = 8.2, I GT = 2 m, Rated DRM ) (Rise Time = 20 ns, Pulse Width = 10 µs) t gt _ 2.0 _ µs Dynamic Characteristics* Characteristic Symbol Min Typ Max Unit Critical Rate of Rise of Off State oltage ( D = Rated DRM, R GK = 1 k Ω, Exponential Waveform, Gate Open, T c = 110ºC) Repetitive Critical Rate of Rise of On State Current (Cf = 60 Hz, I PK = 30, PW = 100 µs, dig/dt = 1 /µs) dv/dt 10 /µs di/dt 100 /µs 3. RGK current not included in measurement.
oltage Current Characteristic of SCR Symbol DRM Parameter Peak Repetitive Forward Off State oltage +Current node + TM I DRM Peak Forward Blocking Current on state RRM Peak Repetitive Reverse Off State oltage I RRM at RRM I H I RRM TM I H Peak Reverse Blocking Current Maximum On State oltage Holding Current Reverse Blocking Region (off state) Reverse valanche Region node +oltage I DRM at DRM Forward Blocking Region (off state) Figure 1. RMS Current Derating Figure 2. On State Power Dissipation Conduction ngle Conduction ngle Figure 3. On State Characteristics Figure. Transient Thermal Response r (t), TRNSIEN T RESIST NCE (NORMLIZED) 0.1 0.01 0.1 10 100 Z JC(t) = R JC(t) r(t) 1000 10,000 t, TIME (ms)
Figure 5. Typical Gate Trigger Current vs Junction Temperature Figure 6. Typical Gate Trigger oltage vs Junction Temperature 35 I GT, GTE TRIGGER CURRENT ( ) 30 25 20 15-0 -20 0 20 0 60 80 100 110 GT, GTE TRIGGER OLTGE (OLTS) 0.5 0-0 -20 02 200 0 60 80 100 110, JUNCTION TEMPER TURE ( C), JUNCTION TEMPER TURE ( C) Figure 7. Typical Holding Current vs Junction Temperature Figure 8. Typical Latching Current vs Junction Temperature 2.0 2.0 I H, HOLDING CURRENT (m) 1.5 0.5 I, LTCHING CURRENT (m) L 1.5 0.5 0-0 -200 0 20 0 60 80 100 110 0-0 -200 20 0 60 80 100 110, JUNCTION TEMPER TURE ( C), JUNCTION TEMPER TURE ( C)
Dimensions Soldering Footprint DPK CSE 01 ISSUE 6.20 0.2 2.58 0.101 3.0 0.118 B C T SETING PLNE 5.80 0.228 1.6 0.063 6.172 0.23 R E S 12 3 K U Z SCLE 3:1 mm inches F L J H D 2 PL G 0.13 (0.005) M T Dim Inches Millimeters Min Max Min Max 0.086 0.09 2.18 2.38 1 0.000 0.005 0.00 0.13 b 0.025 0.035 0.63 0.89 b2 0.030 0.05 0.76 1.1 b3 0.180 0.215.57 5.6 c 0.018 0.02 0.6 0.61 c2 0.018 0.02 0.6 0.61 D 0.235 0.25 5.97 6.22 E 0.250 0.265 6.35 6.73 e 0.090 BSC 2.29 BSC H 0.370 0.10 9.0 10.1 L 0.055 0.070 1.78 L1 0.108 REF 2.7 REF L2 0.020 BSC 0.51 BSC L3 0.035 0.050 0.89 1.27 L 0.00 1 Z 0.155 3.93 1. DIMENSIONING ND TOLERNCING PER NSI Y1.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES ZONE WHERE LL BODY ND LED IRREGULRITIES RE LLOWED.
Dimensions Part Marking System DPK 3 CSE 369D 01 ISSUE B 1 2 3 DPK CSE STYLE 5 YWW CR 70xG S B R 12 3 C E Z 1 2 3 DPK 3 CSE 369D STYLE 5 YWW CR 70xG T SETING PLNE K Y = Year WW = Work Week 70x = Componant Code x = 3, 6 or 8 G = Pb-Free Package F G D 3 PL J 0.13 (0.005) M T H Pin ssignment 1 Gate 2 node Dim Inches Millimeters Min Max Min Max 3 Cathode node 0.235 0.25 5.97 6.35 B 0.250 0.265 6.35 6.73 C 0.086 0.09 2.19 2.38 D 0.027 0.035 0.69 0.88 E 0.018 0.023 0.6 0.58 F 0.037 0.05 0.9 1.1 G 0.090 BSC 2.29 BSC H 0.03 0.00 0.87 1 J 0.018 0.023 0.6 0.58 K 0.350 0.380 8.89 9.65 R 0.180 0.215.5 5.5 S 0.025 0.00 0.63 1 0.035 0.050 0.89 1.27 Z 0.155 3.93 1. DIMENSIONING ND TOLERNCING PER NSI Y1.5M, 1982. 2. CONTROLLING DIMENSION: INCH. Ordering Information Componant Package Shipping MCR703T MCR703TG MCR706T MCR706TG MCR708 MCR708G MCR7081 MCR7081G DPK DPK-3 369D 369D 2500 Tape & Reel 75 Units/ Rail MCR708T MCR708TG DPK 2500 Tape & Reel Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at: www.littelfuse.com/disclaimer-electronics