Design Assistance Assembly Assistance Die handling consultancy Hi-Rel die qualification Hot & Cold die probing Electrical test & trimming Customised Pack Sizes / Qtys Support for all industry recognised supply formats: o o o Waffle Pack Gel Pak Tape & Reel Onsite storage, stockholding & scheduling 1% Visual Inspection o o MIL-STD 883 Condition A MIL-STD 883 Condition A On-site failure analysis Bespoke 4 Hour monitored storage systems for secure long term product support On-site failure analysis Contact baredie@micross.com For price, delivery and to place orders www.analog.com www.micross.com
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Amplifiers - driver & gain block - Chip Typical Applications The is ideal for: Point-to-Point Radios Point-to-Multi-Point Radios & VSAT LO Driver for Mixers Military & Space Functional Diagram Features Gain: 9 db P1dB: +3 dbm Output IP3: + dbm Saturated Power: +4 dbm @ 7% PAE Supply Voltage: +5V @ 18 ma 5 Ohm Matched Input/Output Die Size:.7 x.93 x.1 mm General Description The is a GaAs MMIC PHEMT Driver Amplifier die which operates between 5 and 17 GHz. The amplifier provides up to 31 db of gain, + dbm Output IP3, and +3 dbm of output power at 1 db gain compression, while requiring 18 ma from a +5V supply. The is an ideal driver amplifier for microwave radio applications from 5 to 17 GHz, and may also be biased at +5V, 1 ma to provide db lower gain with improved PAE. The amplifier I/O s are DC blocked and internally matched to 5 Ohms facilitating easy integration into Multi-Chip- Modules (MCMs). All data is taken with die connected at input and output RF ports via one 1 mil wedge bond with minimal length of.31 mm (1 mils). Electrical Specifications, T A = +5 C, Vdd1, Vdd, Vdd3, Vdd4 = 5V, Idd = 18 ma [1] Parameter Min. Typ. Max. Min. Typ. Max. Units Frequency Range 5-9 9-17 GHz Gain 7 31 6 9 db Gain Variation Over Temperature.35.44.4.5 db/ C Input Return Loss 14 16 db Output Return Loss 15 1 db Output Power for 1 db Compression (P1dB) 1 3 1 3 dbm Saturated Output Power (Psat) 4 3.5 dbm Output Third Order Intercept (IP3) dbm Noise Figure 9 7 db Supply Current (Idd= Idd1 + Idd + Idd3 + Idd4) 18 18 ma [1] Adjust Vgg between - to V to achieve Idd = 18mA Typical - 1 For price, delivery and to place orders: Hittite Microwave Corporation, Alpha Road, Chelmsford, MA 184 Phone: 978-5-3343 Fax: 978-5-3373 Order On-line at www.hittite.com Application Support: Phone: 978-5-3343 or apps@hittite.com
Broadband Gain & Return Loss RESPONSE (db) 4 1-1 - - 4 6 8 1 1 14 16 18 Input Return Loss vs. Temperature RETURN LOSS (db) -5-1 -15 - -5 P1dB vs. Temperature 8 S1 S11 S +5 C - 4 6 8 1 1 14 16 18 Gain vs. Temperature GAIN (db) Output Return Loss vs. Temperature RETURN LOSS (db) 4 35 5 15 1 5-5 -1-15 - -5-4 6 8 1 1 14 16 18 Psat vs. Temperature 8 +5C 4 6 8 1 1 14 16 18 +5 C Amplifiers - Driver & Gain block - Chip 6 6 P1dB (dbm) 4 18 +5 C Psat (dbm) 4 18 +5 C 16 16 14 4 6 8 1 1 14 16 18 14 4 6 8 1 1 14 16 18 For price, delivery and to place orders: Hittite Microwave Corporation, Alpha Road, Chelmsford, MA 184 Phone: 978-5-3343 Fax: 978-5-3373 Order On-line at www.hittite.com Application Support: Phone: 978-5-3343 or apps@hittite.com -
Amplifiers - driver & gain block - Chip Power Compression @ 1 GHz Pout (dbm), GAIN (db), PAE (%) 33 7 4 1 18 15 1 9 6 3 Pout (dbm) Gain (db) PAE (%) - -18-16 -14-1 -1-8 -6-4 - Output IP3 vs. Temperature @ Pin = -15 dbm IP3 (dbm) INPUT POWER (dbm) Gain & Power vs. Supply Voltage @ 1 GHz GAIN (db), P1dB (dbm), Psat (dbm) 36 3 8 4 16 4 6 8 1 1 14 16 18 3 8 4 +5 C Gain P1dB Psat Power Compression @ 17 GHz Pout (dbm), GAIN (db), PAE (%) Noise Figure vs. Temperature NOISE FIGURE (db) Reverse Isolation vs. Temperature ISOLATION (db) 33 7 4 1 18 15 1 9 6 3 - -18-16 -14-1 -1-8 -6-4 - 16 1 8 4 4 6 8 1 1 14 16 18 - -4-6 -8 Pout (dbm) Gain (db) PAE (%) INPUT POWER (dbm) +5 C +5 C 16 4.5 4.7 4.9 5.1 5.3 5.5 Vdd (V) -1 4 6 8 1 1 14 16 18-3 For price, delivery and to place orders: Hittite Microwave Corporation, Alpha Road, Chelmsford, MA 184 Phone: 978-5-3343 Fax: 978-5-3373 Order On-line at www.hittite.com Application Support: Phone: 978-5-3343 or apps@hittite.com
Absolute Maximum Ratings Drain Bias Voltage (Vdd1, Vdd, Vdd3, Vdd4) Gate Bias Voltage (Vgg) RF Input Power (RFIN)(Vdd = +5 Vdc) +5.5 Vdc -3 to Vdc +5 dbm Channel Temperature 175 C Continuous Pdiss (T= 85 C) (derate 11.76 mw/ C above 85 C) Thermal Resistance (channel to die bottom) GAIN (db), P1dB (dbm), Psat (dbm), IP3 (dbm) 1.6 W 85 C/W Storage Temperature -65 to +15 C Operating Temperature -55 to +85 C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 35 5 15 Gain, Power & Output IP3 vs. Gate Voltage @ 1 GHz Idd -.8 -.77 -.75 -.73 -.7 -.67 -.65 Vgg (V) Gain P1dB Psat OIP3 Typical Supply Current vs. Vdd Vdd (V) 4 1 18 15 1 9 6 Idd (ma) Idd (ma) 4.5 178 5. 18 5.5 183 Note: Amplifier will operate over full voltage ranges shown above Amplifiers - Driver & Gain block - Chip For price, delivery and to place orders: Hittite Microwave Corporation, Alpha Road, Chelmsford, MA 184 Phone: 978-5-3343 Fax: 978-5-3373 Order On-line at www.hittite.com Application Support: Phone: 978-5-3343 or apps@hittite.com - 4
Outline Drawing Amplifiers - driver & gain block - Chip Die Packaging Information [1] Standard NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM]. DIE THICKNESS IS.4 3. TYPICAL BOND IS.4 SQUARE 4. BACKSIDE METALLIZATION: GOLD 5. BOND PAD METALLIZATION: GOLD 6. BACKSIDE METAL IS GROUND. 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. Alternate GP- (Gel Pack) [] [1] Refer to the Packaging Information section for die packaging dimensions. [] For alternate packaging information contact Hittite Microwave Corporation. - 5 For price, delivery and to place orders: Hittite Microwave Corporation, Alpha Road, Chelmsford, MA 184 Phone: 978-5-3343 Fax: 978-5-3373 Order On-line at www.hittite.com Application Support: Phone: 978-5-3343 or apps@hittite.com
Pad Descriptions Pad Number Function Description Interface Schematic 1 RFIN This pad is AC coupled and matched to 5 Ohms., 3, 4, 5 Vdd1, Vdd, Vdd3, Vdd4 6 RFOUT 7 Vgg Power Supply Voltage for the amplifier. See assembly diagram for required external components. This pad is AC coupled and matched to 5 Ohms. Gate control for amplifier, please follow MMIC Amplifier Biasing Procedure Application Note. See assembly diagram for required external components. Die Bottom GND Die bottom must be connected to RF/DC ground. Amplifiers - Driver & Gain block - Chip For price, delivery and to place orders: Hittite Microwave Corporation, Alpha Road, Chelmsford, MA 184 Phone: 978-5-3343 Fax: 978-5-3373 Order On-line at www.hittite.com Application Support: Phone: 978-5-3343 or apps@hittite.com - 6
Assembly Diagram Amplifiers - driver & gain block - Chip - 7 For price, delivery and to place orders: Hittite Microwave Corporation, Alpha Road, Chelmsford, MA 184 Phone: 978-5-3343 Fax: 978-5-3373 Order On-line at www.hittite.com Application Support: Phone: 978-5-3343 or apps@hittite.com
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 5 Ohm Microstrip transmission lines on.17mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If.54mm (1 mil) thick alumina thin film substrates must be used, the die should be raised.15mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the.1mm (4 mil) thick die to a.15mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure ). Microstrip substrates should brought as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is.76mm to.15 mm (3 to 6 mils). Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pickup..1mm (.4 ) Thick GaAs MMIC.76mm (.3 ) RF Ground Plane Wire Bond.17mm (.5 ) Thick Alumina Thin Film Substrate Figure 1..1mm (.4 ) Thick GaAs MMIC.76mm (.3 ) RF Ground Plane Wire Bond.15mm (.5 ) Thick Moly Tab.54mm (.1 ) Thick Alumina Thin Film Substrate Figure. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 8/ gold tin preform is recommended with a work surface temperature of 55 C and a tool temperature of 65 C. When hot 9/1 nitrogen/hydrogen gas is applied, tool tip temperature should be 9 C. DO NOT expose the chip to a temperature greater than C for more than seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer s schedule. Wire Bonding Ball or wedge bond with.5mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 15 C and a ball bonding force of 4 to 5 grams or wedge bonding force of 18 to grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <.31mm (1 mils). Amplifiers - Driver & Gain block - Chip For price, delivery and to place orders: Hittite Microwave Corporation, Alpha Road, Chelmsford, MA 184 Phone: 978-5-3343 Fax: 978-5-3373 Order On-line at www.hittite.com Application Support: Phone: 978-5-3343 or apps@hittite.com - 8