MDF13N65B N-Channel MOSFET 65V, 14A,.46Ω General Description These N-channel MOSFET are produced using advanced MagnaChip s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. These devices are suitable device for SMPS, high Speed switching and general purpose applications. Features V DS = 65V = 14A @ = V R DS(ON).46Ω @ = V Applications Power Supply PFC High Current, High Speed Switching D G TO-22F MDF Series S Absolute Maximum Ratings (Ta = 25 o C) Characteristics Symbol Rating Unit Drain-Source Voltage V DSS 65 V Gate-Source Voltage S ±3 V Continuous Drain Current T C=25 o C 14* A T C= o C 8.8* A Pulsed Drain Current (1) M 56* A Power Dissipation T C=25 o C P D 36.7 W Derate above 25 o C.29 W/ o C Repetitive Avalanche Energy (1) E AR 23.1 mj Peak Diode Recovery dv/dt (3) dv/dt 4.5 V/ns Single Pulse Avalanche Energy (4) E AS 8 mj Junction and Storage Range T J, T stg -55~15 * Id limited by maximum junction temperature o C Thermal Characteristics Characteristics Symbol Rating Unit Thermal Resistance, Junction-to-Ambient (1) R θja 62.5 Thermal Resistance, Junction-to-Case (1) R θjc 3.4 o C/W 1
Ordering Information Part Number Temp. Range Package Packing RoHS Status MDF13N65BTH -55~15 o C TO-22F Tube Halogen Free Electrical Characteristics (Ta =25 o C) Static Characteristics Characteristics Symbol Test Condition Min Typ Max Unit Drain-Source Breakdown Voltage BV DSS = 25μA, = V 65 - - Gate Threshold Voltage (th) V DS =, = 25μA 2. - 4. Drain Cut-Off Current SS V DS = 6V, = V - - 1 μa Gate Leakage Current I GSS = ±3V, V DS = V - - na Drain-Source ON Resistance R DS(ON) = V, = 7A.4.46 Ω Forward Transconductance g fs V DS = 3V, = 7A - 3.7 - S Dynamic Characteristics Total Gate Charge Q g - 54 - Gate-Source Charge Q gs V DS = 52V, = 14.A, = V (3) - 13 - Gate-Drain Charge Q gd - 21 - Input Capacitance C iss - 24 - Reverse Transfer Capacitance C rss V DS = 25V, = V, f = 1.MHz - 12.8 - Output Capacitance C oss - 243 - Turn-On Delay Time t d(on) - 32 - Rise Time t r = V, V DS = 325V, = 14.A, - 81 - Turn-Off Delay Time t d(off) R G = 25Ω (3) - 24 - Fall Time t f - 76 - Drain-Source Body Diode Characteristics Maximum Continuous Drain to Source Diode Forward Current I S - 14 - A Source-Drain Diode Forward Voltage V SD I S = 14.A, = V - 1.4 V Body Diode Reverse Recovery Time t rr - 377 - ns I F = 14.A, dl/dt = A/μs (3) Body Diode Reverse Recovery Charge Q rr - 8.2 - μc V nc pf ns Note : 1. Pulse width is based on R θjc & R θja and the maximum allowed junction temperature of 15 C. 2. Pulse test: pulse width 3us, duty cycle 2%, pulse width limited by junction temperature T J(MAX)=15 C. 3. I SD 7.A, di/dt 2A/us, V DD BVdss, R g =25Ω, Starting T J=25 C 4. L=7.6mH, I AS=14.A, V DD=5V, R g =25Ω, Starting T J=25 C, 2
(A) Fig.1 On-Region Characteristics Fig.2 On-Resistance Variation with Drain Current and Gate Voltage Reverse Drain Current [A] R DS(ON), (Normalized) Drain-Source On-Resistance BV DSS, (Normalized) Drain-Source Breakdown Voltage,Drain Current [A] R DS(ON) [Ω ].9 3 25 2 15 V gs =4.5V =5.V =5.5V =6.V =6.5V =7.V =7.5V =8.V =.V =15.V Notes 1. 25 μs Pulse Test 2. T C =25.8.7.6 =.V =2V 5 5 15 2 25 V DS,Drain-Source Voltage [V].5 3 6 9 12 15 18 21 24 27 3 33 36,Drain Current [A] 3. 1.2 2.5 1. = V 2. = 7 A 1. = V 2. = 25 μa 1.1 2. 1.5 1. 1..9.5. - -5 5 15 2 T J, Junction [ o C] Fig.3 On-Resistance Variation with.8-5 5 15 2 T J, Junction [ o C] Fig.4 Breakdown Voltage Variation vs. * Notes ; 1. Vds=3V 1. = V 2.25 s Pulse test 15-55 R 15 25 25 1 2 4 6 8 [V] Fig.5 Transfer Characteristics 1..2.4.6.8 1. 1.2 V SD, Source-Drain Voltage [V] Fig.6 Body Diode Forward Voltage Variation with Source Current and 3
Power (W), Drain Current [A], Drain Current [A] Z θ JC (t), Thermal Response, Gate-Source Voltage [V] Capacitance [pf] 8 Note : = 14.A 13V 325V 52V 5 4 C oss C iss = C gs + C gd (C ds = shorted) C oss = C ds + C gd C rss = C gd 6 3 C iss 4 2 2 C rss Notes ; 1. = V 2. f = 1 MHz 2 3 4 5 6 Q G, Total Gate Charge [nc] Fig.7 Gate Charge Characteristics 1 V DS, Drain-Source Voltage [V] Fig.8 Capacitance Characteristics 2 1 Operation in This Area is Limited by R DS(on) 1s s s 1 ms ms ms D=.5.2.1 DC.5-1 -2 Single Pulse T J =Max rated T C =25-1 1 2 V DS, Drain-Source Voltage [V] Fig.9 Maximum Safe Operating Area -1-2.2.1 single pulse Duty Factor, D=t 1 /t 2 PEAK T J = P DM * Z θ JC * R θ JC (t) + T C R Θ JC =3.4 /W -5-4 -3-2 -1 1 t 1, Rectangular Pulse Duration [sec] Fig. Transient Thermal Response Curve 8 single Pulse R thjc = 3.4 /W T C = 25 14 12 6 8 4 2 6 4 2 1E-5 1E-4 1E-3.1.1 1 Pulse Width (s) Fig.11 Single Pulse Maximum Power Dissipation 25 5 75 125 15 T C, Case [ ] Fig.12 Maximum Drain Current vs. Case 4
Physical Dimensions 3 Leads, TO-22F Dimensions are in millimeters unless otherwise specified Symbol Min Nom Max A 4.5 4.93 b.63.91 b1 1.15 1.47 C.33.63 D 15.47 16.13 E 9.6.71 e 2.54 F 2.34 2.84 G 6.48 6.9 L 12.24 13.72 L1 2.79 3.67 Q 2.52 2.96 Q1 3. 3.5 R 3. 3.55 5
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