Applications Radar Product Features Frequency Range: 3.1 3.6 GHz Pout: 5 dbm (at PIN = 27 dbm) Power Gain: 23 db (at PIN = 27 dbm) PAE: 51 % CW Bias: VD = pulsed (PW = 15 ms, DC = 3 %), IDQ = 3 ma, VG = -3 V Typical Package Dimensions: 15.2 x 15.2 x 3.5 mm Package base is pure Cu offering superior thermal management Functional Block Diagram 1 2 3 4 5 1 9 8 7 6 General Description Qorvo s is a packaged high-power S-Band amplifier fabricated on Qorvo s QGaN25.25um GaN on SiC process. Operating from 3.1 to 3.6 GHz, the achieves 1 W saturated output power, a power-added efficiency of >5%, and 23 db power gain. The is packaged in a 1-lead 15x15 mm bolt-down package with a Cu base for superior thermal management. It can support a range of bias voltages and performs well under both short and long pulsed conditions. Both RF ports are internally DC blocked and matched to 5 ohms allowing for simple system integration. Pin Configuration Pad No. Symbol 1, 5 VG 2, 4, 7, 9 GND 3 RFIN 6, 1 VD 8 RFOUT Lead free and RoHS compliant. Evaluation Boards are available upon request. Ordering Information Part Description 3.1 3.6 GHz, 1 W GaN Power Amplifier Datasheet: 4-6-18-1 of 12 - Disclaimer: Subject to change without notice
Absolute Maximum Ratings Parameter Drain Voltage (VD) Gate Voltage Range (VG) Drain Current (ID) Gate Current (IG) Power Dissipation (PDISS), 85 C Input Power, CW, 5 Ω, (PIN) Input Power, CW, VSWR 3:1, VD =,, (PIN) Value 4 V -8 to V 1.4 A -8 to 56 ma 22 W 3 dbm 27 dbm Channel Temperature (TCH) 275 C Mounting Temperature (3 Seconds) 26 C Storage Temperature -55 to 15 C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Recommended Operating Conditions Parameter Value Drain Voltage (VD) Pulsed: PW = 15 ms, DC = 3 % Drain Current (IDQ) 3 ma Drain Current Under RF Drive (ID_DRIVE) See plots p. 8 Gate Voltage (VG) 3 V (Typ.) Gate Current Under RF Drive (IG_DRIVE) See plots p. 8 Temperature (TBASE) -4 to Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. Electrical Specifications Test conditions unless otherwise noted:, VD = (PW = 15 ms, DC = 3 %), IDQ = 3 ma, VG = -3 V typical. Parameter Min Typical Max Units Operational Frequency Range 3.1 3.6 GHz Input Return Loss > 7 db Output Return Loss > 4.5 db Output Power (at PIN = 27 dbm) 5 dbm Power Gain (at PIN = 27 dbm) 23 db Power Added Efficiency (at Pin = 27 dbm) 51 % Output Power Temperature Coefficient (constant VG) -.3 dbm/ C Datasheet: 4-6-18-2 of 12 - Disclaimer: Subject to change without notice
Thermal and Reliability Information Parameter Test Conditions Value Units Thermal Resistance (θjc) (1) TBASE = 85 C, VD = (PW = 15 ms, DC = 3%).776 C/W Channel Temperature (TCH) (Under RF drive) At Freq = 3.3 GHz, PIN = 27 dbm: 175 C IDQ = 3 ma, ID_Drive = 7.6 A Median Lifetime (TM) POUT = 5.5 dbm, PDISS = 116 W 1.47E+8 Hrs Notes: 1. Thermal resistance measured to back of package. Test Conditions: VD = 4 V; Failure Criteria = 1% reduction in ID_MAX 13 P DISS vs. Frequency vs. T BASE Power Dissipation (W) 12 11 1 9 8 P IN = 27 dbm, Pulsed (PW = 15 msec, DC = 3%) 7 Datasheet: 4-6-18-3 of 12 - Disclaimer: Subject to change without notice
Typical Performance: Small Signal Conditions unless otherwise specified: VD = (PW = 15 ms, DC = 3 %), IDQ = 3 ma, VG = -3 V typical. S21 (db) Gain vs. Frequency vs. V D 3 27 Temp =, CW 24 21 18 15 12 9 6 3 2.5 2.75 3. 3.25 3.5 3.75 4. S21 (db) 3 27 24 21 18 15 12 9 6 3 Gain vs. Frequency vs. Temp. CW 2.5 2.75 3. 3.25 3.5 3.75 4. S21 (db) Gain vs. Frequency vs. Drain Current 3 Temp =, CW 27 24 21 18 15 12 15 ma 9 3 ma 6 6 ma 3 2.5 2.75 3. 3.25 3.5 3.75 4. S11 (db) Input Return Loss vs. Frequency vs. I DQ -3 Temp =, CW -6-9 -12 15 ma -18 3 ma -21 6 ma -24-27 -3 2.5 2.75 3. 3.25 3.5 3.75 4. S11 (db) Input Return Loss vs. Frequency vs. V D -3 Temp =, CW -6-9 -12-18 -21-24 -27-3 2.5 2.75 3. 3.25 3.5 3.75 4. S11 (db) Input Return Loss vs. Frequency vs. Temp. -3-6 -9-12 -18-21 -24-27 CW -3 2.5 2.75 3. 3.25 3.5 3.75 4. Datasheet: 4-6-18-4 of 12 - Disclaimer: Subject to change without notice
Typical Performance: Small Signal Conditions unless otherwise specified: VD = (PW = 15 ms, DC = 3 %), IDQ = 3 ma, VG = -3 V typical. S22 (db) Output Return Loss vs. Frequency vs. V D -3-6 -9-12 -18-21 -24-27 Temp =, CW -3 2.5 2.75 3. 3.25 3.5 3.75 4. S22 (db) Output Return Loss vs. Frequency vs. I DQ -3-6 -9-12 -18-21 15 ma -24 3 ma 6 ma -27 Temp =, CW -3 2.5 2.75 3. 3.25 3.5 3.75 4. S22 (db) Output Return Loss vs. Freq. vs. Temp. -3-6 -9-12 -18-21 -24-27 CW -3 2.5 2.75 3. 3.25 3.5 3.75 4. Datasheet: 4-6-18-5 of 12 - Disclaimer: Subject to change without notice
Typical Performance: Large Signal Conditions unless otherwise specified: VD = (PW = 15 ms, DC = 3 %), IDQ = 3 ma, VG = -3 V typical. P OUT (dbm) 52. 51.5 51. 5.5 5. 49.5 Output Power vs. Frequency vs. V D P IN = 27 dbm, Temp = 49. P OUT (dbm) 52. 51.5 51. 5.5 5. 49.5 49. Output Power vs. Frequency vs. Temp. P IN = 27 dbm 48.5 48. 55 5 Output Power vs. Input Power vs. Pulse Freq = 3.3 GHz, Temp = 52 42 Output Power vs. Input Power vs. Temp. Freq = 3.3 GHz 45 32 P OUT (dbm) 4 35 P OUT (dbm) 22 12 2 3 25 PW = 15 msec, DC = 3 % PW =.1 msec, DC = 1 % 5 1 15 2 25 3-8 -18 5 1 15 2 25 3-5 2 nd Harmonic vs. Frequency vs. P IN V D =, PW = 1 µs, DC = 1%, Temp = -1 3rd Harmonic vs. Frequency vs. P IN V D =, PW = 1 µs, DC = 1%, Temp = 2f Output Power (dbc) -1-2 -25-3 -35 2 dbm -4 27 dbm -45 2.7 2.9 3.1 3.3 3.5 3.7 3f Output Power (dbc) -2-3 -4-5 -6-7 -8 2 dbm 27 dbm -9 2.7 2.9 3.1 3.3 3.5 3.7 Datasheet: 4-6-18-6 of 12 - Disclaimer: Subject to change without notice
Typical Performance: Large Signal Conditions unless otherwise specified: VD = (PW = 15 ms, DC = 3 %), IDQ = 3 ma, VG = -3 V typical. 55 PAE vs. Frequency vs. V D P IN = 27 dbm, Temp = 28 Power Gain vs. Input Power vs. V D Freq = 3.3 GHz, Temp = Power Added Efficiency (%) 53 51 49 47 Gain (db) 25 22 19 45 16 5 1 15 2 25 3 55 P IN = 27 dbm PAE vs. Frequency vs. Temp. 28 Power Gain vs. Input Power vs. Freq. Temp = Power Added Efficiency (%) 53 51 49 47 Gain (db) 25 22 19 3.1 GHz 3.3 GHz 3.5 GHz 45 16 5 1 15 2 25 3 55 PAE vs. Input Power vs. Temp. Freq = 3.3 GHz 28 Power Gain vs. Input Power vs. Temp. Power Added Efficiency (%) 45 35 25 15 5 Gain (db) 25 22 19-5 5 1 15 2 25 3 16 Freq = 3.3 GHz 5 1 15 2 25 3 Datasheet: 4-6-18-7 of 12 - Disclaimer: Subject to change without notice
Typical Performance: Large Signal Conditions unless otherwise specified: VD = (PW = 15 ms, DC = 3 %), IDQ = 3 ma, VG = -3 V typical. 8. 7.5 Drain Current vs. Frequency vs. V D P IN = 27 dbm, Temp = 3. 2.5 Gate Current vs. Frequency vs. V D P IN = 27 dbm, Temp = Drain Current (A) 7. 6.5 6. 5.5 5. 4.5 4. Gate Current (ma) 2. 1.5 1..5. -.5-1. Drain Current (A) 8. 7.5 7. 6.5 6. 5.5 5. 4.5 Drain Current vs. Frequency vs. Temp. P IN = 27 dbm Gate Current (ma) 1. 8. 6. 4. 2.. Gate Current vs. Frequency vs. Temp. P IN = 27 dbm 4. -2. 8 7 6 Drain Current vs. Input Power vs. Freq. Temp = 3.1 GHz 3.3 GHz 3.5 GHz 23 18 Gate Current vs. Input Power vs. Freq. Temp = Drain Current (A) 5 4 3 2 1 Gate Current (ma) 13 8 3 3.1 GHz 3.3 GHz 3.5 GHz 5 1 15 2 25 3-2 5 1 15 2 25 3 Datasheet: 4-6-18-8 of 12 - Disclaimer: Subject to change without notice
Applications Information and Pin Layout C5 1-47uF C1.1uF R1 1 Ohms 1 1 C7.1uF R5 1 Ohms Vg RF IN 3 2 9 8 RF OUT Vd 4 7 C6 1-47uF R2 1 Ohms C2.1uF 5 6 R6 1 Ohms C8.1uF Bias-up Procedure 1. Set ID limit to 1 A, IG limit to 5 ma 2. Apply 5 V to VG 3. Apply + to VD; ensure IDQ is approx. ma 4. Adjust VG until IDQ = 3 ma (VG ~ 3 V Typ.). 5. Turn on RF supply Bias-down Procedure 1. Turn off RF supply 2. Reduce VG to 5 V; ensure IDQ is approx. ma 3. Set VD to V 4. Turn off VD supply 5. Turn off VG supply Pin Description Pin No. Symbol Description 1,5 VG Gate Voltage; Bias network is required; must be biased from both sides; see recommended Application Information above. 3 RFIN Output; matched to 5 Ω; DC blocked 2,4,7,9 GND Must be grounded on the PCB. 6,1 VD Drain voltage; Bias network is required; must be biased from both sides; see recommended Application Information above. 8 RFOUT Input; matched to 5 Ω; DC blocked Datasheet: 4-6-18-9 of 12 - Disclaimer: Subject to change without notice
Evaluation Board GND Vg V D GND P1 C5 R3 C1 R1 RF IN R3 C3 C1 R1 C5 CP-6 EVB C11 R7 C9 C7 R5 RF OUT C7 R5 R2 C2 R4 C6 R2 C2 C4 R4 C6 111967 REV A C12 R6 C8 C1 R8 R6 C8 P2 GND Vg V D GND Bill of Material NOTE: Both Top and Bottom Vd and Vg must be biased. Reference Des. Value Description Manuf. Part Number C1, C2, C7, C8.1 µf Cap, 63, 5 V, 1%, X7R Various C5, C6 1-47 µf Cap, 126, 5 V, 2%, X5R (1v is OK) Various R1, R2, R5, R6 1 Ohms Res, 42, 5V, 5% Various Res, 42, 5% (jumper) required for the Various R3, R4 Ohms above EVB design Datasheet: 4-6-18-1 of 12 - Disclaimer: Subject to change without notice
Assembly Notes 1. Clean the board or module with alcohol. Allow it to dry fully. 2. To improve the thermal and RF performance, we recommend the following: a. Apply thermal compound or 4 mils indium shim between the package and the board. b. Attach a heat sink to the bottom of the board and apply thermal compound or 4 mils indium shim between the heat sink and the board. 3. Apply solder to each pin of the. 4. Clean the assembly with alcohol. Mechanical Information Units: inches Tolerances: unless specified x.xx = ±.1 x.xxx = ±.5 Materials: Base: Copper Lid: Plastic All metalized features are gold plated Part is epoxy sealed Marking: 2813: Part number YY: Part Assembly year WW: Part Assembly week ZZZ: Serial Number MXXX: Batch ID Datasheet: 4-6-18-11 of 12 - Disclaimer: Subject to change without notice
Product Compliance Information ESD Sensitivity Ratings Caution! ESD-Sensitive Device ESD Rating: 1B Value: 8 V Test: Human Body Model (HBM) Standard: ANSI/ESD/JEDEC JS-1-212 MSL Rating Level 5A at 26 C convection reflow. The part is rated Moisture Sensitivity Level 5A at 26 C per JEDEC standard IPC/JEDEC J-STD-2. Solderability Compatible with the latest version of J-STD-2, Leadfree solder, 26 C. RoHS Compliance This part is compliant with EU 22/95/EC RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment). This product also has the following attributes: Lead Free Halogen Free (Chlorine, Bromine) Antimony Free TBBP-A (C15H12Br42) Free PFOS Free SVHC Free Contact Information For the latest specifications, additional product information, worldwide sales and distribution locations, and information about Qorvo: Web: www.qorvo.com Tel: +1.972.994.8465 Email: info-sales@qorvo.com Fax: +1.972.994.854 For technical questions and application information: Email: info-products@qorvo.com Important Notice The information contained herein is believed to be reliable. Qorvo makes no warranties regarding the information contained herein. Qorvo assumes no responsibility or liability whatsoever for any of the information contained herein. Qorvo assumes no responsibility or liability whatsoever for the use of the information contained herein. The information contained herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with such information is entirely with the user. All information contained herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for Qorvo products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. Qorvo products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death. Datasheet: 4-6-18-12 of 12 - Disclaimer: Subject to change without notice