GAL16V/3 High Performance E CMOS PLD Generic Array Logic Features Functional Block Diagram HGH PERFORMANCE E CMOS TECHNOLOGY 7.5 ns Maximum Propagation Delay Fmax = 100 MHz 6 ns Maximum from Clock nput to Data Output TTL Compatible 1 ma Outputs UltraMOS Advanced CMOS Technology / /O/Q 50% REDUCTON N POWER FROM BPOLAR 75mA Typ cc ACTVE PULL-UPS ON ALL PNS (GAL16VD-7 and GAL16VD-10 E CELL TECHNOLOGY Reconfigurable Logic Reprogrammable Cells 100% Tested/100% Yields High Speed Electrical Erasure (<100ms 0 Year Data Retention EGHT OUTPUT LOGC MACROCELLS Maximum Flexibility for Complex Logic Designs Programmable Output Polarity Also Emulates 0-pin PAL Devices with Full Function/ Fuse Map/Parametric Compatibility PROGRAMMABLE AND-ARRAY (64 X 3 /O/Q /O/Q /O/Q /O/Q /O/Q PRELOAD AND POWER-ON RESET OF ALL REGSTERS 100% Functional Testability APPLCATONS NCLUDE: DMA Control State Machine Control High Speed Graphics Processing Standard Logic Speed Upgrade OE /O/Q /O/Q /OE ELECTRONC SGNATURE FOR DENTFCATON Description Pin Configuration The GAL16V/3 is a high performance E CMOS programmable logic device processed in full compliance to ML-STD-3. This military grade device combines a high performance CMOS process with Electrically Erasable (E floating gate technology to provide the highest speed/power performance available in the 3 qualified PLD market. The GAL16VD/3, at 7.5ns maximum propagation delay time, is the world's fastest military qualified CMOS PLD. The generic GAL architecture provides maximum design flexibility by allowing the Output Logic Macrocell ( to be configured by the user. The GAL16V/3 is capable of emulating all standard 0-pin PAL devices with full function/fuse map/parametric compatibility. Unique test circuitry and reprogrammable cells allow complete AC, DC, and functional testing during manufacture. Therefore, Lattice Semiconductor delivers 100% field programmability and functionality of all GAL products. n addition, 100 erase/write cycles and data retention in excess of 0 years are specified. 3 4 6 / Vcc 0 GAL16V Top View /O/Q 19 1 16 9 11 13 14 GND /OE /O/Q /O/Q /O/Q /O/Q /O/Q /O/Q /O/Q / GND 1 5 CERDP GAL 16V 0 15 10 11 Vcc /O/Q /O/Q /O/Q /O/Q /O/Q /O/Q /O/Q /O/Q /OE Copyright 010 Lattice Semiconductor Corp. All brand or product names are trademarks or registered trademarks of their respective holders. The specifications and information herein are subject to change without notice. LATTCE SEMCONDUCTOR CORP., 5555 Northeast Moore Ct., Hillsboro, Oregon 9714, U.S.A. April 010 Tel. (503 6-000; 1-00-LATTCE; FAX (503 6-556; http://www.latticesemi.com 16vmil_04 1
Specifications GAL16VD-7/10/3 Absolute Maximum Ratings (1 Supply voltage V CC... 0.5 to +7V nput voltage applied....5 to V CC +1.0V Off-state output voltage applied....5 to V CC +1.0V Storage Temperature... 65 to 150 C Case Temperature with Power Applied... 55 to 15 C 1.Stresses above those listed under the Absolute Maximum Ratings may cause permanent damage to the device. These are stress only ratings and functional operation of the device at these or at any other conditions above those indicated in the operational sections of this specification is not implied (while programming, follow the programming specifications. DC Electrical Characteristics Recommended Operating Conditions Case Temperature (T C... 55 to 15 C Supply voltage (V CC with Respect to Ground... +4.50 to +5.50V Over Recommended Operating Conditions (Unless Otherwise Specified SYMBOL PARAMETER CONDTON MN. TYP. 3 MAX. UNTS VL nput Low Voltage Vss 0.5 0. V VH nput High Voltage.0 Vcc+1 V L 1 nput or /O Low Leakage Current 0V VN VL (MAX. 100 μa H nput or /O High Leakage Current 3.5V VN VCC 10 μa VOL Output Low Voltage OL = MAX. Vin = VL or VH 0.5 V VOH Output High Voltage OH = MAX. Vin = VL or VH.4 V OL Low Level Output Current 1 ma OH High Level Output Current ma OS Output Short Circuit Current VCC = 5V VOUT = 0.5V T A = 5 C 30 150 ma CC Operating Power VL = 0.5V VH = 3.0V L-7/-10 75 ma Supply Current ftoggle = 15MHz Outputs Open 1 The leakage current is due to the internal pull-up on all pins. See nput Buffer section for more information. One output at a time for a maximum duration of one second. Vout = 0.5V was selected to avoid test problems caused by tester ground degradation. Characterized but not 100% tested. 3 Typical values are at Vcc = 5V and TA = 5 C
Specifications GAL16VD-7/10/3 AC Switching Characteristics PARAMETER TEST COND 1. DESCRPTON Over Recommended Operating Conditions -7 MN. MAX. -10 MN. MAX. tpd A nput or /O to Combinational Output 1 7.5 10 ns UNTS tco A Clock to Output Delay 1 6 1 7 ns tcf Clock to Feedback Delay 6 7 ns tsu Setup Time, nput or Feedback before Clock 7 10 ns th Hold Time, nput or Feedback after Clock 0 0 ns A Maximum Clock Frequency with 76.9 5. MHz External Feedback, 1/(tsu + tco fmax 3 A Maximum Clock Frequency with 76.9 5. MHz nternal Feedback, 1/(tsu + tcf A Maximum Clock Frequency with 100 6.5 MHz No Feedback twh Clock Pulse Duration, High 5 ns twl Clock Pulse Duration, Low 5 ns ten B nput or /O to Output Enabled 1 9 10 ns B OE to Output Enabled 1 7 10 ns tdis C nput or /O to Output Disabled 1 9 10 ns C OE to Output Disabled 1 7 10 ns 1 Refer to Switching Test Conditions section. Calculated from fmax with internal feedback. Refer to fmax Descriptions section. 3 Refer to fmax Descriptions section. Capacitance (T A = 5 C, f = 1.0 MHz SYMBOL PARAMETER MAXMUM* UNTS TEST CONDTONS C nput Capacitance 10 pf V CC = 5.0V, V =.0V C /O /O Capacitance 10 pf V CC = 5.0V, V /O =.0V *Characterized but not 100% tested. 3
Specifications GAL16VD/3 Absolute Maximum Ratings (1 Supply voltage V CC... 0.5 to +7V nput voltage applied....5 to V CC +1.0V Off-state output voltage applied....5 to V CC +1.0V Storage Temperature... 65 to 150 C Case Temperature with Power Applied... 55 to 15 C 1.Stresses above those listed under the Absolute Maximum Ratings may cause permanent damage to the device. These are stress only ratings and functional operation of the device at these or at any other conditions above those indicated in the operational sections of this specification is not implied (while programming, follow the programming specifications. Recommended Operating Conditions Case Temperature (T C... 55 to 15 C Supply voltage (V CC with Respect to Ground... +4.50 to +5.50V DC Electrical Characteristics Over Recommended Operating Conditions (Unless Otherwise Specified SYMBOL PARAMETER CONDTON MN. TYP. MAX. UNTS VL nput Low Voltage Vss 0.5 0. V VH nput High Voltage.0 Vcc+1 V L nput or /O Low Leakage Current 0V VN VL (MAX. 10 μa H nput or /O High Leakage Current 3.5V VN VCC 10 μa VOL Output Low Voltage OL = MAX. Vin = VL or VH 0.5 V VOH Output High Voltage OH = MAX. Vin = VL or VH.4 V OL Low Level Output Current 1 ma OH High Level Output Current ma OS 1 Output Short Circuit Current VCC = 5V VOUT = 0.5V T A = 5 C 30 150 ma CC Operating Power VL = 0.5V VH = 3.0V L -15/ -0/-30 75 ma Supply Current ftoggle = 15MHz Outputs Open 1 One output at a time for a maximum duration of one second. Vout = 0.5V was selected to avoid test problems caused by tester ground degradation. Characterized but not 100% tested. 3 Typical values are at Vcc = 5V and TA = 5 C 4
Specifications GAL16VD/3 AC Switching Characteristics TEST PARAMETER COND 1. Over Recommended Operating Conditions -15 DESCRPTON MN. MAX. -0 MN. MAX. -30 UNTS MN. MAX. tpd A nput or /O to Combinational Output 3 15 3 0 3 30 ns tco A Clock to Output Delay 1 15 0 ns tcf Clock to Feedback Delay 1 15 0 ns tsu Setup Time, nput or Feedback before Clock 1 15 5 ns th Hold Time, nput or Feedback after Clock 0 0 0 ns A Maximum Clock Frequency with 41.6 33.3. MHz External Feedback, 1/(tsu + tco fmax 3 A Maximum Clock Frequency with 41.6 33.3. MHz nternal Feedback, 1/(tsu + tcf A Maximum Clock Frequency with 50 41.6 33.3 MHz No Feedback twh Clock Pulse Duration, High 10 1 15 ns twl Clock Pulse Duration, Low 10 1 15 ns ten B nput or /O to Output Enabled 15 0 30 ns B OE to Output Enabled 15 1 5 ns tdis C nput or /O to Output Disabled 15 0 30 ns C OE to Output Disabled 15 1 5 ns 1 Refer to Switching Test Conditions section. Calculated from fmax with internal feedback. Refer to fmax Descriptions section. 3 Refer to fmax Descriptions section. Capacitance (T A = 5 C, f = 1.0 MHz SYMBOL PARAMETER MAXMUM* UNTS TEST CONDTONS C nput Capacitance 10 pf V CC = 5.0V, V =.0V C /O /O Capacitance 10 pf V CC = 5.0V, V /O =.0V *Characterized but not 100% tested. 5
Specifications GAL16V/3 Switching Waveforms NPUT or /O FEEDBACK VALD NPUT tsu th NPUT or /O FEEDBACK COMBNATONAL OUTPUT VALD NPUT tpd REGSTERED OUTPUT tco 1/fmax (external fdbk Combinatorial Output Registered Output NPUT or /O FEEDBACK OE tdis ten tdis ten COMBNATONAL OUTPUT REGSTERED OUTPUT nput or /O to Output Enable/Disable OE to Output Enable/Disable twh twl 1/fmax (w/o fb Clock Width REGSTERED FEEDBACK 1/fmax (internal fdbk tcf tsu fmax with Feedback 6
Specifications GAL16V/3 fmax Descriptions LOGC ARRAY REGSTER tsu tco fmax with External Feedback 1/(tsu+tco LOGC ARRAY REGSTER Note: fmax with external feedback is calculated from measured tsu and tco. tcf tpd LOGC ARRAY tsu + th REGSTER fmax with No Feedback Note: fmax with no feedback may be less than 1/(twh + twl. This is to allow for a clock duty cycle of other than 50%. fmax with nternal Feedback 1/(tsu+tcf Note: tcf is a calculated value, derived by subtracting tsu from the period of fmax w/internal feedback (tcf = 1/fmax - tsu. The value of tcf is used primarily when calculating the delay from clocking a register to a combinatorial output (through registered feedback, as shown above. For example, the timing from clock to a combinatorial output is equal to tcf + tpd. Switching Test Conditions nput Pulse Levels GND to 3.0V nput Rise and Fall Times 3ns 10% 90% nput Timing Reference Levels 1.5V Output Timing Reference Levels 1.5V Output Load See Figure 3-state levels are measured 0.5V from steady-state active level. Output Load Conditions (see figure FROM OUTPUT (O/Q UNDER TEST +5V R 1 TEST PONT Test Condition R1 R CL A 390Ω 750Ω 50pF B Active High 750Ω 50pF Active Low 390Ω 750Ω 50pF C Active High 750Ω 5pF Active Low 390Ω 750Ω 5pF R C * L *C L NCLUDES TEST FXTURE AND PROBE CAPACTANCE 7
Specifications GAL16V/3 GAL16V Ordering nformation (ML-STD-3 and SMD T pd T su T co cc ( ns ( ns ( ns ( (ma ma Ordering # Package M L-STD-3 SMD # 7.5 7 6 0-Pin CERDP GAL16VD-7LD/3 596-93907RA 0-Pin 1 GAL16VD-7LR/3 596-93907A 10 10 7 0-Pin CERDP GAL16VD-10LD/3 596-93904RA 0-Pin GAL16VD-10LR/3 596-93904A 15 1 1 0-Pin CERDP GAL16VD-15LD/3 596-93903RA 0-Pin GAL16VD-15LR/3 596-93903A 0 15 15 0-Pin CERDP GAL16VD-0LD/3 596-9390RA 0-Pin GAL16VD-0LR/3 596-9390A 30 5 0 0-Pin CERDP GAL16VD-30LD/3 596-93901RA Note: Lattice Semiconductor recognizes the trend in military device procurement towards using SMD compliant devices, as such, ordering by this number is recommended. 1. Discontinued per PCN #06-07.. Discontinued per PCN #05A-10. Part Number Description XXXXXXXX _ XX X X X GAL16VD Device Name ML Process /3 = 3 Process L = Low Power Speed (ns Power Package D = CERDP R =