Wideband RF LDMOS Integrated Power Amplifier W, 2 V, 7 MHz Description The is a wideband, on chip matched, -watt, 2-stage LDMOS integrated power amplifier intended for wideband driver applications in the 7 to MHz frequency range. It is offered in a -lead thermally-enhanced overmolded package for cool and reliable operation. Package PG-DSO--63 Power Adde ed Efficiency (%) 3 2 Two-tone Drive-up V DD = 2 V, I DQ1 = 7 ma, I DQ2 = 9 ma ƒ = 9, 9, 96 MHz PAE IMD3 9 MHz 9 MHz 27 29 31 33 3 37 39 1 3 Average Output Power ( dbm ) - - - -2 - -3 - - - - -6 IMD D3 (dbc) Features Broadband on-chip matching, -ohm input and ~ -ohm output Typical GSM/EDGE performance at 2 V, 9 to 96 MHz - Gain = db - Efficiency = 3% at W output power - EVM @ W = 1.% - ACPR @ khz = 61 dbc - ACPR @ 6 khz = 7 dbc Typical CW performance, 9 MHz, 2 V - Output power at P 1dB = W - Efficiency = 9% Integrated ESD protection. Meets HBM Class 1B (minimum), per JESD22-A11F. Excellent thermal stability, low HCI drift Capable of handling :1 VSWR @ 2 V, W (CW) output power RoHS-compliant package RF Characteristics GSM/EDGE Characteristics (not subject to production test verified by design/characterization in Wolfspeed test fixture) V DD = 2 V, I DQ1 = 7 ma, I DQ2 = 1 ma, ƒ = 9 to 96 MHz, P OUT = W Avg. Characteristic Symbol Min Typ Max Unit Input Return Loss IRL db Gain G ps db Power Added Efficiency PAE 3 % Error Vector Magnitude EVM (RMS) 1. % All published data at T CASE = 2 C unless otherwise indicated table continued next page ESD: Electrostatic discharge sensitive device observe handling precautions! Rev., 1--19 6 Silicon Drive Durham, 2773 www.wolfspeed.com
2 RF Characteristics (cont.) GSM/EDGE Characteristics (cont.) V DD = 2 V, I DQ1 = 7 ma, I DQ2 = 1 ma, ƒ = 9 to 96 MHz, P OUT = W Avg. Characteristic Symbol Min Typ Max Unit Modulation Spectrum khz offset ACPR1 61 dbc 6 khz offset ACPR2 7 dbc Spurs Load 3:1 6 dbc Gain Flatness G.2 db Two-tone Measurements (tested in Wolfspeed test fixture) V DD = 2 V, I DQ1 = 7 ma, I DQ2 = 9 ma, P OUT = W avg., ƒ = 9 MHz, tone spacing = 1 MHz Characteristic Symbol Min Typ Max Unit Gain G ps 29 db Drain Efficiency h D 32. 33. % Third Order Intermodulation Distortion IMD3 3 31 dbc DC Characteristics Stage 1 Characteristics Conditions Symbol Min Typ Max Unit Drain Leakage Current V DS = 2 V, V GS = V I DSS 1. µa V DS = 63 V, V GS = V I DSS. µa Gate Leakage Current V GS = V, V DS = V I GSS 1. µa On-state Resistance V GS = V, V DS =.1 V R DS(on) 3. Ω Operating Gate Voltage V DS = 2 V, I DQ1 = 7 ma, V GS 2. 2. 3. V Stage 2 Characteristics Conditions Symbol Min Typ Max Unit Drain-source Breakdown Voltage V GS = V, I DS = ma V (BR)DSS 6 V Drain Leakage Current V DS = 2 V, V GS = V I DSS 1. µa V DS = 63 V, V GS = V I DSS. µa Gate Leakage Current V GS = V, V DS = V I GSS 1. µa On-state Resistance V GS = V, V DS =.1 V R DS(on).6 Ω Operating Gate Voltage V DS = 2 V, I DQ2 = 9 ma V GS 2. 3. V Rev., 1--19 6 Silicon Drive Durham, 2773 www.wolfspeed.com
3 Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage V DSS 6 V Gate-Source Voltage V GS. to +12 V Junction Temperature T J C Input Power P IN dbm Total Device Dissipation P D 91 W Above 2 C derate by.2 W/ C Storage Temperature Range T STG to +1 C Overall Thermal Resistance (T CASE = 7 C) Stage 1 R θjc. C/W P OUT = W, I DQ1 = 7 ma, I DQ2 = 9 ma Stage 2 R θjc 2. C/W Moisture Sensitivity Level Level Test Standard Package Temperature Unit 3 IPC/JEDEC J-STD- 26 C Ordering Information Type and Version Order Code Package and Description Shipping V1 R -V1- R PG-DSO--63, molded plastic Tape & Reel, pcs Rev., 1--19 6 Silicon Drive Durham, 2773 www.wolfspeed.com
Typical Performance (data taken in Wolfspeed production test fixture) (db) Gain ( CW Performance V DD = 2 V, I DQ1 = 7 ma, I DQ2 = 9 ma ƒ = 9, 9, 96 MHz 32 6 6 2 Gain 26 2 22 9 MHz 9 MHz 96 MHz 3 1 16 PAE 2 1 12 29 31 33 3 37 39 1 3 Output Power (dbm) P ower Added Efficiency(%) Gain (db) 32 2 2 16 12 Broadband Performance V DD = 2 V, I DQ1 = 7 ma, I DQ2 = 9 ma, fixture tuned for 9 96 MHz Gain Return Loss 7 9 9 1 11 Frequency (MHz) - - -12-16 - -2-2 -32 turn Loss (db) Ret EDGE - EVM V DD = 2 V, I DQ1 = 7 ma, I DQ2 = 1 ma, ƒ = 92.6 MHz EDGE - EVM V DD = 2 V, I DQ1 = 7 ma, I DQ2 = 1 ma, series are at selected frequencies dded Efficiency (%) Power A 3 2 PAE 9 C 2 C 2 C EVM 31 32 33 3 3 36 37 3 39 1 2 Output Power (dbm) 9 7 6 3 2 1 Error Vector Magnitude (%) ) ficiency (%) r Added Eff Power 92.2 MHz 92.6 MHz 99. MHz 3 EVM 2 PAE 31 32 33 3 3 36 37 3 39 1 2 Output Power (dbm) 9 7 6 3 2 1 ) Error Vector Mag gnitude (%) Rev., 1--19 6 Silicon Drive Durham, 2773 www.wolfspeed.com
Typical Performance (cont.) EDGE Modulation Spectrum Performance V DD = 2 V, I DQ1 = 7 ma, I DQ2 = 1 ma, series show ƒ = 92.6 MHz, at selected temperatures EDGE Modulation Spectrum Performance V DD = 2 V, I DQ1 = 7 ma, I DQ2 = 1 ma, series are at selected frequencies Power Add ded Efficie ency (%) 9 C 2 C 2 C khz PAE 6 khz 32 3 36 3 2 Output Power (dbm) -3 - - -6-7 - m (dbc) Modulatio on Spectru Powe er Added Efficiency (%) 3 2 92.2 MHz 92.6 MHz 99. MHz PAE khz 6 khz 32 3 36 3 2 Output Power (dbm) -3 - - - - -6-6 -7-7 - - Mod dulation Spectrum (dbc) Gate Source Voltage vs. Temperature V DD = 2 V, I DQ1 = 7 ma, I DQ2 = 9 ma tage ource Volt V Gate So hreshold), malized G (th Norm 1. 1. 1. 1..9.9. VGS1 VGS2 Slope = 1.3 mv/ C - - 7 9 Temperature ( C) Rev., 1--19 6 Silicon Drive Durham, 2773 www.wolfspeed.com
6 Broadband Circuit Impedance Frequency Z Load Ω MHz R jx 7.6.3 7.1 3.7 7 9. 3.1 76 9. 2. 7 9.2 1. 9. 1.2...7.1 6.6.. 1. 9. 2.1 9. 2. 9. 3. 96.6.3 9.7... - WAVELENGTHS TOWARD GENERA - N GT H S TO WARD LOAD. 1..1 MHz Z Load.1.2 7 MHz.3 Z = Ω. See next page for reference circuit information Rev., 1--19 6 Silicon Drive Durham, 2773 www.wolfspeed.com
7 Reference Circuit VD1 C1 µf V C2 µf C3 1µF C.1µF C 7pF 1 DUT C 7 pf C16.1µF C17 1µF C1 µf C19 µf V VD2 R1 R3 2k variable VG1 C7 µf J1 C 1µF l 1 C9.1µF l 2 C6 1pF C 7pF 2 3 6 7 9 19 1 17 16 1 13 12 11 l 3 C 2.2pF l l l 6 C21.6pF C22 33pF l 7 l J2 Q1 V G2 R2 R 2k variable Q2 C11 µf C12 1µF C13.1µF C1 7pF a 1 2 m _ b d _ - 2 2-1 1 Reference circuit schematic for ƒ = 9 MHz Circuit Assembly Information DUT, LDMOS IC Reference Fixture Part No. LTN/ PCB.76 mm [."] thick, ε r = 3., Rogers RO3, 1 oz. copper Find Gerber files for this reference fixture on the Wolfspeed Web site at (www.wolfspeed.com/rf) Microstrip Electrical Characteristics at 9 MHz 1 L x W (mm) L x W (in.) l1.17 λ,. Ω 3. x 1.7.11 x.67 l2.13 λ,. Ω 2.71 x 1.7.973 x.67 l3.2 λ,.6 Ω.9 x 12.7.161 x. l.1 λ, 9. Ω 2.77 x 1..97 x.1 l. λ, 3. Ω 7.7 x 3.2.29 x.119 l6. λ,. Ω.33 x 2.11.32 x.3 l7.72 λ,. Ω 12.12 x 2.11.77 x.3 l. λ,. Ω.1 x 2.11. x.3 Rev., 1--19 6 Silicon Drive Durham, 2773 www.wolfspeed.com
Reference Circuit (cont.) VD1 VD2 C2 C1 C C16 C17 C1 C19 C3 C C RF_IN C6 C7 C9 C C C1 C13 C12 C11 C C21 C22 RF_OUT VG1 R1 R3 Q1 R2 R Q2 VG2 _2A_CUS a 1 m 2_cd _ 2-1 - 9 Reference circuit assembly diagram (not to scale) Component Description Suggested Manufacturer P/N or Comment C3, C, C12, C17 Ceramic capacitor, 1 µf Digi-Key -111-2-ND C, C9, C13, C16 Capacitor,.1 µf Digi-Key PCCBCT-ND C2, C7, C11, C1 Tantalum capacitor, µf, V Digi-Key P71-ND C1, C19 Electrolytic capacitor, µf, V Digi-Key PCE371CT-ND C6 Ceramic capacitor, 1. pf ATC 6S 1RO CT C Ceramic capacitor, 2.2 pf ATC 6S 2R2 CT C21 Ceramic capacitor,.6 pf ATC 6S R6 CT C22 Ceramic capacitor, 33 pf ATC 6S 3 JT C, C, C1, C Ceramic capacitor, 7 pf ATC 6S 7 JT Q1, Q2 Transistor Infineon Technologies BCP6 R1, R2 Chip resistor, ohms Digi-Key PXXECT-ND R3, R Variable resistor, 2K ohms Digi-Key 322W-2ETR-ND Rev., 1--19 6 Silicon Drive Durham, 2773 www.wolfspeed.com
a 1 m 2_ p d _1-3 1-9 Pinout Diagram (top view) V DD 1 1 V DD 1 2 19 3 1 17 RF In 16 RF In 6 V G 1 7 1 V G 2 13 9 12 11 Source/ground: plated copper heatslug on backside of package Rev., 1--19 6 Silicon Drive Durham, 2773 www.wolfspeed.com
PG-DSO--63_ po_1_12-7-12 Package Outline Specifications Package PG-DSO--63 6. 1 INDEX PIN 1 13. [.12] MAX 1.±. [.9±.12] 11. [.33] 2X 2.9 [.11] MAX (2 PLS) 2.9 [.116] 6. 6. [.236] 11 9 X 1.27 = 11.3 9 X. =. 1. [.3] MAX (2 PLS) TOP VIEW BOTTOM VIEW 1 ±1 (2 PLS) TOP/BOTTOM ALL SIDES 3. [.137] MAX. 11.±. [.33±.] SEE DETAIL A 1.27 [.].9±. [.626±.] SIDE VIEW.+.13 [.+.]..2mm M C A S B S END VIEW. [.6] REF.3 [.1] GAUGE PLANE.2 +.7.2 +.3 [..1 ] +.1 [+.].9±. STANDOFF [.37±.6] 1.6 [.63] REF DETAIL A Diagram Notes unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y1.M-199. Diagram 2. Notes unless Package dimensions: otherwise 11. specified: mm by.9 mm by 3.3 mm. 1. 3. Interpret JEDEC drawing dimensions number: and tolerances MO-166. per ASME Y1.M-199. 2.. Package Does not dimensions: include plastic 11. or mm metal by protrusion.9 mm by of 3.3. mm. max per side. 3.. JEDEC Does not drawing include number dambar : MO-166. protrusion; maximum allowable dambar. Does protrusion not include shall be plastic. or mm. metal protrusion of. mm max per side.. 6. Does Bottom not metallization. include dambar protrusion; maximum allowable dambar protrusion shall be 7.. Sn plating mm. (matte): micron [196. 9. microinch]. 6. Bottom metallization. 7. Sn plating (matte) : - micron [196. 9. microinch]. Rev., 1--19 6 Silicon Drive Durham, 2773 www.wolfspeed.com
11 Revision History 1 7-- Preliminary all Preliminary specification for new product in development. 2 9-2-27 Production all Revise package information and circuit diagrams, add impedance information. 3 9--31 Production 1 Revise VSWR rating. --16 Production 3; Add moisture sensitivity information; update package outline notes. 11--17 Production 2; Revise DC table; remove graph. 6 11--22 Production 2; all Revise two-tone table; minor updates to graphics and diagrams for readability. 7 1--7 Production 3 Add shipping option. 1--19 Production All Converted to Wolfspeed Data Sheet For more information, please contact: 6 Silicon Drive Durham, North Carolina, USA 2773 www.wolfspeed.com/rf Sales Contact RFSales@wolfspeed.com RF Product Marketing Contact RFMarketing@wolfspeed.com 919.7.716 Notes Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Typical parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. Copyright 1 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Wolfspeed and the Wolfspeed logo are trademarks of Cree, Inc. Rev., 1--19 www.wolfspeed.com