Typical Applications The is ideal for: Test Instrumentation Military & Space Functional Diagram Features High P1dB Output Power: +28 dbm High : 14 db High Output IP3: +41 dbm Single Supply: +V @ 3 ma Ohm Matched Input/Output Die Size: 2.92 x 1.3 x.1 mm General Description Electrical Specifications, T A = +2 C, Vdd = +V, Idd = 3mA The is a GaAs MMIC phemt Distributed Power Amplifier die which operates between.2 and 22 GHz. This self-biased power amplifier provides 14 db of gain, 41 dbm output IP3 and +28 dbm of output power at 1 db gain compression while requiring only 3mA from a +V supply. flatness is excellent at ±.7 db from DC to 12 GHz making the ideal for EW, ECM, Radar and test equipment applications. The amplifier I/Os are internally matched to Ohms facilitating integration into Mutli-Chip-Modules (MCMs). All data is taken with the chip connected via two.2mm (1 mil) wire bonds of minimal.31 mm (12 mils) length. Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units Frequency Range.2-8 8-16 16-22 GHz 12 13. 12 13. 12. 14 db Flatness ±.7 ±.6 ±.3 db Variation Over Temperature..4.7 db/ C Input Return Loss 14 db Output Return Loss 13 16 16 db Output Power for 1 db Compression (P1dB) 2 28 2. 28. 2 28 dbm Saturated Output Power (Psat) 3 3 29 dbm Output Third Order Intercept (IP3) Pout / tone = +16dBm Output Second Order Intercept (IP2) Pout / tone =+16dBm 4 41 41 dbm 41 41 42 dbm Noise Figure 6 3 4 db Supply Current (Idd) (Vdd= V) 3 3 3 ma Supply Voltage 8 11 8 11 8 11 V 1 Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 96, Norwood, MA 62-96
& Return Loss Low Frequency ` & Return Loss RESPONSE (db) - - - S21 S11 S22-2 3 vs. Temperature GAIN (db) 18 16 14 12 8 +2C +8C -C 6 4 8 12 16 24 RESPONSE (db) - - - S21 S11 S22 -.1.2.3.4..6.7.8.9 1 Input Return Loss vs. Temperature RETURN LOSS (db) - - - +2C +8C -C - 4 8 12 16 24 Output Return Loss vs. Temperature vs. Supply Voltage 18 RETURN LOSS (db) - - - +2C +8C -C GAIN (db) 16 14 12 +V 8-4 8 12 16 24 6 4 8 12 16 24 For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 96, Norwood, MA 62-96 2
Input Return Loss vs. Supply Voltage Output Return Loss vs. Supply Voltage RETURN LOSS (db) - - - +V - 4 8 12 16 24 Reverse Isolation vs. Temperature ISOLATION (db) - - -3-4 - +2C +8C -C -6 4 8 12 16 24 RETURN LOSS (db) - - - +V - 4 8 12 16 24 Noise Figure vs. Temperature NOISE FIGURE (db) 9 8 7 6 4 3 2 1 +2C +8C -C 2 4 6 8 12 14 16 18 22 Low Frequency P1dB vs. Temperature P1dB vs. Temperature 3 3 P1dB (dbm) 28 26 24 +2C +8C -C P1dB (dbm) 28 26 24 +2C +8C -C 22 22.2.4.6.8 1 1.2 1.4 1.6 1.8 4 8 12 16 24 3 For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 96, Norwood, MA 62-96
P1dB vs. Supply Voltage Low Frequency Psat vs. Temperature P1dB (dbm) 3 28 26 24 22 4 8 12 16 24 Psat vs. Temperature Psat (dbm) 3 28 26 24 22 +V +2C +8C -C 4 8 12 16 24 Psat (dbm) 3 28 26 24 22.2.4.6.8 1 1.2 1.4 1.6 1.8 Psat vs. Supply Voltage Psat (dbm) 3 28 26 24 22 +2C +8C -C +V 4 8 12 16 24 Power Compression @ 2 GHz Power Compression @ 6 GHz 3 4 3 4 Pout(dBm), GAIN(dB), PAE(%) 3 2 Pout PAE Idd 4 4 39 38 37 36 Pout(dBm), GAIN(dB), PAE(%) 3 2 Pout PAE Idd 4 4 39 38 37 36 3 3 6 9 12 18 21 3 3 6 9 12 18 21 For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 96, Norwood, MA 62-96 4
Power Compression @ GHz Power Compression @ 14 GHz 3 4 3 4 Pout(dBm), GAIN(dB), PAE(%) 3 2 Pout PAE 3 6 9 12 18 21 Power Compression @ 18 GHz Pout(dBm), GAIN(dB), PAE(%) 3 3 2 Pout PAE 3 6 9 12 18 21 Idd Idd 4 4 39 38 37 36 3 4 4 4 39 38 37 36 3 Pout(dBm), GAIN(dB), PAE(%) 3 2 Pout PAE 3 6 9 12 18 21 Power Compression @ 22 GHz Pout(dBm), GAIN(dB), PAE(%) 3 3 2 Pout PAE 1 3 7 9 11 13 17 19 Idd Idd 4 4 39 38 37 36 3 4 4 39 38 37 36 3 34 PAE @ Psat vs. Temperature 3 Power Dissipation @ +8 C 6 PAE (%) 2 +2C +8C -C POWER DISSIPATION (W) 4 3 2 1 2GHz 6GHz GHz 14GHz 18GHz 22GHz 4 8 12 16 24 4 8 12 16 For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 96, Norwood, MA 62-96
& Power vs. Supply Voltage @ 2 GHz & Power vs. Supply Voltage @ 6 GHz 3 3 (db), P1dB (dbm), Psat (dbm) (db), P1dB (dbm), Psat (dbm) 3 2 P1dB Psat 8 9 11 3 3 2 & Power vs. Supply Voltage @ GHz 8 9 11 P1dB Psat (db), P1dB (dbm), Psat (dbm) (db), P1dB (dbm), Psat (dbm) 3 2 P1dB Psat 8 9 11 3 3 2 & Power vs. Supply Voltage @ 14 GHz P1dB Psat 8 9 11 & Power vs. Supply Voltage @ 18 GHz & Power vs. Supply Voltage @ 22 GHz 3 3 (db), P1dB (dbm), Psat (dbm) 3 2 P1dB Psat (db), P1dB (dbm), Psat (dbm) 3 2 P1dB Psat 8 9 11 8 9 11 For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 96, Norwood, MA 62-96 6
Low Frequency OIP3 vs. Temperature @ Pout = +16 dbm / Tone 46 OIP3 vs. Temperature @ Pout = +16 dbm / Tone 48 IP3 (dbm) 44 42 4 38 36 34 3.2.4.6.8 1 1.2 1.4 1.6 1.8 OIP3 vs. Supply Voltage @ Pout = +16 dbm / Tone IP3 (dbm) 48 46 44 42 4 38 36 34 +2C +8C -C +V 3 4 8 12 16 24 IP3 (dbm) 46 44 42 4 38 36 34 +2C +8C -C 3 4 8 12 16 24 Output IM3 @ Vdd = IM3 (dbc) 7 6 4 3 2GHz 6GHz GHz 14GHz 18GHz 22GHz 12 14 16 18 22 Pout/TONE (dbm) Output IM3 @ Vdd = Output IM3 @ Vdd = +V 7 7 6 6 IM3 (dbc) 4 3 2GHz 6GHz GHz 14GHz 18GHz 22GHz 12 14 16 18 22 Pout/TONE (dbm) IM3 (dbc) 4 3 2GHz 6GHz GHz 14GHz 18GHz 22GHz 12 14 16 18 22 Pout/TONE (dbm) 7 For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 96, Norwood, MA 62-96
Output IM3 @ Vdd = IM3 (dbc) Second Harmonics vs. Supply Voltage @ Pout = +16 dbm SECOND HARMONIC (dbc) 7 6 4 3 12 14 16 18 22 4 4 3 3 2 2GHz 6GHz GHz 14GHz 18GHz 22GHz Pout/TONE (dbm) +V 2 4 6 8 12 14 16 18 22 FREQUENCY(GHz) Second Harmonics vs. Temperature @ Pout = +16 dbm SECOND HARMONIC (dbc) 4 4 3 3 2 +2C +8C -C 2 4 6 8 12 14 16 18 22 FREQUENCY(GHz) Second Harmonics vs. Pout SECOND HARMONIC (dbc) 4 4 3 3 2 +8dBm +dbm +12dBm +14dBm +16dBm +18dBm +dbm 2 4 6 8 12 14 16 18 22 FREQUENCY(GHz) OIP2 vs. Temperature @ Pout = +16 dbm / Tone 48 46 44 OIP2 vs. Supply Voltage @ Pout = +16 dbm / Tone 48 46 44 42 42 IP2 (dbm) 4 38 36 34 +2C +8C -C IP2 (dbm) 4 38 36 34 +V 3 2 4 6 8 12 14 16 18 3 2 4 6 8 12 14 16 18 For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 96, Norwood, MA 62-96 8
Supply Current vs. Supply Voltage 36 Absolute Maximum Ratings Drain Bias Voltage (Vdd) RF Input Power (RFIN)(Vdd = +V) Output Load VSWR 7:1 Continuous Pdiss (T= 8 C) (derate 62 mw/ C above 8 C) +12 Vdc +2 dbm.6 W Storage Temperature -6 to C Operating Temperature - to 8 C ESD Sensitivity (HBM) Class1A, Passed 2V ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 36 3 3 34 34 33 8 9 11 Reliabilty Information Channel Temperature to Maintain 1 Million Hour MTTF Thermal Resistance (channel to die bottom) 17 C 16.2 C/W Stresses at or above those listed in the Absolute Maximum Ratings may cause permanent damage to the product. This is a stress rating only, functional operation of the product at these or any other conditions above those indicated in the operational section of this specification is not implied. Operation beyond the maximum operating condition for extended periods may affect product reliability. 9 For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 96, Norwood, MA 62-96
Outline Drawing This die utilizes fragile air bridges. Any pick-up tools used must not contact the die in the cross hatched area. Die Packaging Information [1] Standard Alternate GP-2 (Gel Pack) [2] [1] Refer to the Packaging Information section for die packaging dimensions. [2] For alternate packaging information contact Analog Devices, Inc.. NOTES: 1. ALL DIMENSIONS IN INCHES [MILLIMETERS] 2. DIE THICKNESS IS.4 (.) 3. TYPICAL BOND PAD IS.4 (.) SQUARE 4. BOND PAD METALIZATION: GOLD. BACKSIDE METALLIZATION: GOLD 6. BACKSIDE METAL IS GROUND 7. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS 8. OVERALL DIE SIZE IS ±.2 Pad Descriptions Pad Number Function Description Interface Schematic 1 RFIN This pad is DC coupled and matched to Ohms. 2 RFOUT & Vdd RF output for amplifier. Connect DC bias (Vdd) network to provide drain current (Idd). See application circuit herein. Die Bottom GND Die bottom must be connected to RF/DC ground. For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 96, Norwood, MA 62-96
Assembly Diagram Application Circuit NOTE 1: Drain Bias (Vdd) must be applied through a broadband bias tee with low series resistance and capable of providing ma 11 For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 96, Norwood, MA 62-96
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). Ohm Microstrip transmission lines on.127mm ( mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If.24mm ( mil) thick alumina thin film substrates must be used, the die should be raised.mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the.2mm (4 mil) thick die to a.mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). Microstrip substrates should be placed as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is.76mm to.2 mm (3 to 6 mils). Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pickup..2mm (.4 ) Thick GaN MMIC.76mm (.3 ) RF Ground Plane Wire Bond.127mm (. ) Thick Alumina Thin Film Substrate General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 8/ gold tin preform is recommended with a work surface temperature of 2 C and a tool temperature of 26 C. When hot 9/ nitrogen/hydrogen gas is applied, tool tip temperature should be 29 C. DO NOT expose the chip to a temperature greater than 3 C for more than seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer s schedule. Wire Bonding RF bonds made with two 1 mil wires are recommended. These bonds should be thermosonically bonded with a force of 4-6 grams. DC bonds of.1 (.2 mm) diameter, thermosonically bonded, are recommended. Ball bonds should be made with a force of 4- grams and wedge bonds at 18-22 grams. All bonds should be made with a nominal stage temperature of C. A minimum amount of ultrasonic energy should be applied to achieve reliable bonds. All bonds should be as short as possible, less than 12 mils (.31 mm). Figure 1..2mm (.4 ) Thick GaAs MMIC.76mm (.3 ).mm (. ) Thick Moly Tab RF Ground Plane Wire Bond.24mm (. ) Thick Alumina Thin Film Substrate Figure 2. For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 96, Norwood, MA 62-96 12