Output rectifiers in high-frequency switched-mode power supplies

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Rev.05-5 June 2018 1. General description in a SOT78 (TO-220AB) plastic package. These diodes are rugged with a guaranteed electrostatic discharge voltage capability. 2. Features and benefits Fast switching Low on-state losses Guaranteed ESD capability Low thermal resistance High thermal cycling performance Soft recovery minimizes power-consuming oscillations 3. Applications Output rectifiers in high-frequency switched-mode power supplies 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Values Unit Absolute maximum rating V RRM repetitive peak reverse voltage I O(AV) average output current square-wave pulse; δ = 0.5; T mb 119 C; both diodes conducting; Fig. 1; Fig. 2 I FRM repetitive peak forward current I FSM non-repetitive peak forward current δ = 0.5; t p = 25 μs; T mb 119 C; per diode; square-wave pulse t p = 10 ms; sine-wave pulse; T j(init) = 25 C; per diode t p = 8.3 ms; sine-wave pulse; T j(init) = 25 C; per diode 200 V 10 A 10 A 50 A 55 A Symbol Parameter Conditions Min Typ Max Unit Static characteristics V F forward voltage I F = 5 A; T j = 150 C; Fig. 4-0.8 0.895 V Dynamic characteristics t rr reverse recovery time I F = 1 A; V R = 30 V; di F /dt = 100 A/μs; T j = 25 C; ramp recovery; Fig. 5 Electrostatic discharge V ESD electrostatic discharge voltage - 15 25 ns HBM; C = 250 pf; R = 1.5 kω; all pins - - 8 kv

5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 A1 anode 1 2 K cathode 3 A2 anode 2 mb K mounting base; cathode mb A1 K sym125 A2 1 2 3 6. Ordering information Table 3. Ordering information Type number Package Name Description Version TO-220AB plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78 7. Marking Table 4. Marking codes Type number Marking codes Co., Ltd. 2018. All rights reserved 5 June 2018 2 / 10

8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Values Unit V RRM repetitive peak reverse voltage V RWM crest working reverse voltage 200 V 200 V V R reverse voltage DC 200 V I O(AV) average output current δ = 0.5; square-wave pulse; T mb 119 C; both diodes conducting; Fig. 1; Fig. 2 I FRM repetitive peak forward current I FSM non-repetitive peak forward current I RRM repetitive peak reverse current I RSM non-repetitive peak reverse current δ = 0.5; t p = 25 μs; T mb 119 C; per diode; square-wave pulse t p = 10 ms; sine-wave pulse; T j(init) = 25 C; per diode t p = 8.3 ms; sine-wave pulse; T j(init) = 25 C; per diode 10 A 10 A 50 A 55 A δ = 0.001; t p = 2 μs 0.2 A t p = 100 μs 0.2 A T stg storage temperature -40 to 150 C T j junction temperature 150 C Electrostatic discharge V ESD electrostatic discharge voltage HBM; C = 250 pf; R = 1.5 kω; all pins 8 kv I F(AV) = I F(RMS) δ Fig. 1. Forward power dissipation as a function of average forward current; square waveform; maximum values; per diode a = form factor = I F(RMS) / I F(AV) Fig. 2. Forward power dissipation as a function of average forward current; sinusoidal waveform; maximum values; per diode Co., Ltd. 2018. All rights reserved 5 June 2018 3 / 10

9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit R th(j-mb) thermal resistance from junction to mounting base R th(j-a) thermal resistance from junction to ambient with heatsink compound; both diodes conducting with heatsink compound; per diode; Fig. 3 - - 3 K/W - - 4.5 K/W - 60 - K/W Fig. 3. Transient thermal impedance from junction to mounting base as a function of pulse width Co., Ltd. 2018. All rights reserved 5 June 2018 4 / 10

10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V F forward voltage I F = 5 A; T j = 150 C; Fig. 4-0.8 0.895 V I F = 5 A; T j = 25 C; Fig. 4-0.95 1.1 V I F = 10 A; T j = 25 C; Fig. 4-1.1 1.25 V I R reverse current V R = 200 V; T j = 25 C - 2 10 μa Dynamic characteristics Q r recovered charge I F = 2 A; V R = 30 V; di F /dt = 20 A/μs; T j = 25 C; Fig. 5 t rr reverse recovery time I F = 1 A; V R = 30 V; di F /dt = 100 A/μs; ramp recovery; T j = 25 C; Fig. 5 I RM peak reverse recovery current V R = 200 V; T j = 100 C - 0.1 0.2 ma I F = 0.5 A; I R = 1 A; step recovery; T j = 25 C; Fig. 6 I F = 2 A; V R = 30 V; di F /dt = 20 A/μs; T j = 25 C; Fig. 5 V FR forward recovery voltage I F = 1 A; di F /dt = 10 A/μs; T j = 25 C; Fig. 7-4 9 nc - 15 25 ns - 10 20 ns - 0.4 0.7 A - 1 - V I F dl F dt t rr time 25 % Q r 100 % I R I RM 003aac562 (1) T j = 150 C; typical values (2) T j = 150 C; maximum values (3) T j = 25 C; maximum values Fig. 5. Reverse recovery definitions; ramp recovery Fig. 4. Forward current as a function of forward voltage Co., Ltd. 2018. All rights reserved 5 June 2018 5 / 10

I F time V F V FRM V F time 001aab912 Fig. 6. Reverse recovery definitions; step recovery Fig. 7. Forward recovery definitions Co., Ltd. 2018. All rights reserved 5 June 2018 6 / 10

11. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78 E p A A 1 D 1 q mounting base D L 1 (1) L 2 (1) L b 1 (2) (3 ) Q b 2 (2) (2 ) 1 2 3 b(3 ) c e e 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT mm A 4.7 4.1 A 1 1.40 1.25 b b 1 (2) 0.9 0.6 1.6 1.0 b (2) 2 c D D 1 E e 1.3 1.0 0.7 0.4 16.0 15.2 6.6 5.9 10.3 9.7 2.54 L L 1 (1) L 2 (1) max. 15.0 12.8 3.30 2.79 3.0 p 3.8 3.5 q 3.0 2.7 Q 2.6 2.2 Notes 1. Lead shoulder designs may vary. 2. Dimension includes excess dambar. OUTLINE VERSION SOT78 REFERENCES IEC JEDEC JEITA 3-lead TO-220AB SC-46 EUROPEAN PROJECTION ISSUE DATE 08-04-23 08-06-13 Co., Ltd. 2018. All rights reserved 5 June 2018 7 / 10

12. Revision history Table 8. Revision history Document ID Release date Data sheet status Change notice Supersedes v.5 20180605 - v.4 Modifications: Change from NXP version to WeEn version v.4 20110714 - BYQ28E_SERIES v.3 Modifications: Type number separated from data sheet BYQ28E_SERIES v.3. The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. Legal texts have been adapted to the new company name where appropriate. BYQ28E_SERIES v.3 19981001 Product specification - BYQ28E_SERIES v.2 Co., Ltd. 2018. All rights reserved 5 June 2018 8 / 10

13. Legal information Data sheet status Document status [1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet Product status [3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.ween-semi.com. Definitions Draft The document is a draft version only. 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Translations A non-english (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Co., Ltd. 2018. All rights reserved 5 June 2018 10 / 10

14. Contents 1. General description...1 2. Features and benefits...1 3. Applications...1 4. Quick reference data...1 5. Pinning information...2 6. Ordering information...2 7. Marking...2 8. Limiting values...3 9. Thermal characteristics...4 10. Characteristics...5 11. Package outline...7 12. Revision history...8 13. Legal information...9 14. Contents... 11 Co., Ltd. 2018. All rights reserved For more information, please visit: http://www.ween-semi.com For sales office addresses, please send an email to: salesaddresses@ween-semi.com Date of release: 5 June 2018 Co., Ltd. 2018. All rights reserved 5 June 2018 11 / 10