AOTFBM V, A Alpha IGBT TM With soft and fast recovery anti-parallel diode General Description Latest AlphaIGBT (α IGBT) technology V breakdown voltage Very fast and soft recovery freewheeling diode High efficient turn-on di/dt controllability Low VCE(SAT) enables high efficiencies Low turn-off switching loss and softness Very good EMI behavior High short-circuit ruggedness Product Summary V CE I C (T C = C) V A V CE(sat) (T J =2 C).7V Applications Motor Drives Home appliance applications such as refrigerators and washing machines Fan, Pumps, Vacuum Cleaner Other Hard Switching Applications TO-2F C AOTFBM E G C G E Orderable Part Number Package Type Form AOTFBM TO2F Tube Absolute Maximum Ratings T A =2 C unless otherwise noted Parameter Symbol AOTFBM Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current T C =2 C T C = C Pulsed Collector Current, Limited by T Jmax Turn off SOA, V CE V, Limited by T Jmax Continuous Diode T C =2 C Forward Current T C = C Diode Pulsed Current, Limited by T Jmax Short circuit withstanding time ) V GE =V, V CC 4V, T J C Power Dissipation T C =2 C T C = C Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, /8" from case for seconds Thermal Characteristics T J, T STG T L - to Parameter Maximum Junction-to-Ambient Maximum IGBT Junction-to-Case Maximum Diode Junction-to-Case Symbol R θ JA R θ JC R θ JC AOTFBM 8. ) Allowed number of short circuits: <; time between short circuits: >s. 2) TO2F I C follows TO2/TO2. V CE V GE I C I CM I LM I FM t SC 2) 2) Minimum Order Quantity ± V A I F 2) A P D 2) Units V µs 2 A A A W C C Units C/W C/W Rev..: April www.aosmd.com Page of 9 C/W
Electrical Characteristics (T J =2 C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV CES Collector-Emitter Breakdown Voltage I C =ma, V GE =V, T J =2 C - - V V CE(sat) V F T J =2 C -.7.98 T J =2 C -.87 - T J = C -.9 - T J =2 C -.8 2.2 T J =2 C -.79 - T J = C -.7 - V GE(th) Gate-Emitter Threshold Voltage V CE =V, I C =ma -. - V I CES T J =2 C - - T J =2 C - - T J = C - - I GES Gate-Emitter leakage current V CE =V, V GE =±V - - ± na g FS C ies C oes C res Q g Q ge Q gc I C(SC) R g t D(on) t r t D(off) t f E on E off E total t rr t D(on) t r t D(off) t f E on E off E total t rr Q rr I rm Collector-Emitter Saturation Voltage Diode Forward Voltage Zero Gate Voltage Collector Current Forward Transconductance DYNAMIC PARAMETERS Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate to Emitter Charge V GE =V, V CC =V, I C =A Gate to Collector Charge Short circuit collector current Gate resistance SWITCHING PARAMETERS, (Load Inductive, T J =2 C) Turn-On DelayTime Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Turn-On Energy Turn-Off Energy Total Switching Energy Diode Reverse Recovery Time T J =2 C Q rr Diode Reverse Recovery Charge I F =A, di/dt=a/µs, V CC =4V I rm Diode Peak Reverse Recovery Current SWITCHING PARAMETERS, (Load Inductive, T J = C) Turn-On DelayTime Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Turn-On Energy Turn-Off Energy Total Switching Energy Diode Reverse Recovery Time Diode Reverse Recovery Charge Diode Peak Reverse Recovery Current V GE =V, I C =A V GE =V, I C =A V CE =V, V GE =V V CE =V, I C =A V GE =V, V CC =2V, f=mhz V GE =V, V CC =4V, t sc us, T J C V GE =V, V CC =V, f=mhz T J =2 C V GE =V, V CC =4V, I C =A, R G =Ω T J = C V GE =V, V CC =4V, I C =A, R G =Ω T J = C I F =A, di/dt=a/µs, V CC =4V V V µa - 4. - S - 48 - pf - - pf - - pf - 4 - nc - - nc -. - nc - - A - - Ω - 8. - ns - - ns - - ns - 8 - ns -.8 - mj -.7 - mj -. - mj - 9 - ns -.24 - µc - 2.78 - A - 7 - ns - 4 - ns - 27 - ns - - ns -.9 - mj -.2 - mj -.2 - mj - 27 - ns -.8 - µc -. - A THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev..: April www.aosmd.com Page 2 of 9
2 V 7V V V V 2 V V 7V V 2 4 7 V CE (V) Figure : Output Characteristic (T j =2 C) 9V V GE = 7V 2 4 7 V CE (V) Figure 2: Output Characteristic (T j = C) V 9V V GE =7V V CE =V 2 2 9 C 2 C I F (A) 9 C -4 C 9 2 V GE (V) Figure : Transfer Characteristic 2 C -4 C 2 4 V F (V) Figure 4: Diode Characteristic 4 2. A V CE(sat) (V) 2 I C =A I C =A I C =2.A V SD (V) 2.. A IF=A 2 7 2 Temperature ( C) Figure : Collector-Emitter Saturation Voltage vs. Junction Temperature 2 7 2 Temperature ( C) Figure : Diode Forward voltage vs. Junction Temperature Rev..: April www.aosmd.com Page of 9
2 V CE =V I C =A C ies V GE (V) 9 Capacitance (pf) C oes C res 4 8 2 Q g (nc) Figure 7: Gate-Charge Characteristics 8 24 2 4 V CE (V) Figure 8: Capacitance Characteristic 2 Power Disspation(W) 2 7 2 T CASE ( C) Figure : Power Disspation as a Function of Case 2 E- E-4 Current rating 8 4 I CE(S) (A) E- E- E-7 V CE =V V CE =V 2 E-8 2 7 2 T CASE ( C) Figure : Current De-rating E-9 2 7 2 Temperature ( C) Figure 2: Diode Reverse Leakage Current vs. Junction Temperature Rev..: April www.aosmd.com Page 4 of 9
Td(off) Tf Td(on) Tr Td(off) Tf Td(on) Tr Switching Time (ns) Switching Time (ns) 2 4 8 Figure : Switching Time vs. I C (T j = C, V GE =V, V CE =4V, R g =Ω) 4 R g (Ω) Figure 4: Switching Time vs. R g (T j = C, V GE =V, V CE =4V, I C =A) Switching Time (ns) Td(off) Tf Td(on) Tr V GE(TH) (V) 7 4 2 2 7 2 T J ( C) Figure : Switching Time vs.t j (V GE =V, V CE =4V, I C =A, R g =Ω) 2 7 2 T J ( C) Figure : V GE(TH) vs. T j Rev..: April www.aosmd.com Page of 9
SwitchIng Energy (mj)...4..2. Eoff Eon Etotal Switching Energy (mj).8.7...4..2. Eoff Eon Etotal 2 4 8 Figure 7: Switching Loss vs. I C (T j = C, V GE =V, V CE =4V, R g =Ω). 4 R g (Ω) Figure 8: Switching Loss vs. R g (T j = C, V GE =V, V CE =4V, I C =A). Eoff. Eoff.2 Eon.2 Eon Switching Energy (mj).2.. Etotal Switching Energ y (mj).2.. Etotal.. 2 7 2 T J ( C) Figure 9: Switching Loss vs. T j (V GE =V, V CE =4V, I C =A, R g =Ω) 4 4 V CE (V) Figure : Switching Loss vs. V CE (T j = C, V GE =V, I C =A, R g =Ω) Rev..: April www.aosmd.com Page of 9
8 2 4 2 4 C C Q rr (nc) 48 Q rr C 2 C 2 C 2 4 8 I F (A) Figure 2: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current (V GE =V, V CE =4V, di/dt=a/µs) I rm I rm (A) T rr (ns) 24 8 T rr 2 C 2 C C 2 4 8 I F (A) Figure 22: Diode Reverse Recovery Time and Softness Factor vs. Conduction Current (V GE =V, V CE =4V, di/dt=a/µs) S S 2 Q rr (nc) 4 Q rr C 2 C C 2 C 4 di/dt (A/µS) µ Figure 2: Diode Reverse Recovery Charge and Peak Current vs. di/dt (V GE =V, V CE =4V, I F =A) I rm I rm (A) T rr (ns) 24 8 T rr C 2 C C 2 C 4 di/dt (A/µS) Figure 24: Diode Reverse Recovery Time and Softness Factor vs. di/dt (V GE =V, V CE =4V, I F =A) S 2 S Rev..: April www.aosmd.com Page 7 of 9
Z θjc Normalized Transient Thermal Resistance.. D=T on /T T J,PK =T C +P DM.Z θjc.r θjc R θjc = C/W Single Pulse In descending order D=.,.,.,.,.2,., single pulse P DM T on T. E- E-.... Pulse Width (s) Figure 2: Normalized Maximum Transient Thermal Impedance for IGBT Z θjc Normalized Transient Thermal Resistance.. D=T on /T T J,PK =T C +P DM.Z θjc.r θjc R θjc =8. C/W Single Pulse In descending order D=.,.,.,.,.2,., single pulse P DM T on T. E- E-.... Pulse Width (s) Figure 2: Normalized Maximum Transient Thermal Impedance for Diode Rev..: April www.aosmd.com Page 8 of 9
Figure A: Gate Charge Test Circuit & Waveforms Figure B: Inductive Switching Test Circuit & Waveforms Figure C: Diode Recovery Test Circuit & Waveforms Rev..: April www.aosmd.com Page 9 of 9