International Microwave Symposium June 2013 1
1500+ customers 190+ products 50 countries 2
UltraCMOS Peregrine Semiconductor Unveils STeP8 UltraCMOS Process Technology
Leadership Position in SOI Technology Most Widely Used Semiconductor Technology CMOS Scalable Lowest Power and Cost Fabless Model + Near-Perfect Insulating Substrate SAPPHIRE Proven SOI Technology Outstanding RF Properties Mature Supply Chain Industry-Leading RF Semiconductor Technology Combining the Best of the Best Unique Position in Industry Better Performance Enables Integration 4
Announcing Semiconductor Technology Process 8 Ron CGD CDS CGS ON OFF STeP8 36% Improvement 5
6 Exceeding Industry Performance Demands IIP3 (dbm) 90 85 80 75 70 65 60 55 Mobile RFFE Device Linearity Requirement vs. Peregrine Product/Technology Introduction 2G 3G 4G LTE STeP3 PE42672 STeP2 PE4261 STeP5 PE42682 STeP8 5G 4G LTE 3G 2G 50 2004 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014
Deliver: Industry-Leading Performance and Integration 7 Competitive Analysis GaAs UltraCMOS 200 180 STeP2 STeP5 STeP8 160 140 120 100 80 2007 2013 2007 2013 60 40 83% Smaller* Single CSP IC vs. Multi-Chip Design 20 0 1Q - 3Q 2011 1Q - 3Q 2012 UltraCMOS Switch Eliminates Units Shipped (Millions) 29 Wire Bonds Custom Multi-Chip Module External Electrostatic Discharge (ESD) Protection Circuitry UltraCMOS STeP5 Volume Shipments * STeP5 Switch compared to GaAs Switch 7
Product Overview
Complementary RF Products and End Markets Mobile Wireless Devices Wireless Infrastructure Broadband Test & Measurement Industrial Aerospace & Defense Product Families RF Switches Digital Step Attenuators Synthesizers Mixers / Upconverters Prescalers VGAs DTCs DC-DC Converters Phase Shifter Power Amplifiers Product in Production Product Sampling or in Development 9
Performance Focus High Quality High Power High Isolation Ultra-low Phase Noise High Frequency & Power High Frequency & Power 10
PE42520 9 khz 13.0 GHz SPDT Test & Measurement/ATE Switches 16-lead 3x3 mm QFN Upgraded PE42552 with improved power handling of +36 dbm. Eliminate need to protect switch from overpower conditions. Excellent broadband frequency support and low frequency performance Excellent linearity of 115 dbm IIP2 @ 8.0 GHz. Critical for filter bank switching applications Optional V SS bypass to eliminate spurs in RF signal chain Pin compatible with PE42552 SPDT RF Switch 50Ω absorptive 9 khz 13.0 GHz HaRP technology enhanced Low Insertion Loss 0.7 db @ 3.0 GHz 0.8 db @ 10.0 GHz 1.9 db @ 13 GHz High Isolation 47 db @ 3.0 GHz 37 db @ 8.0 GHz 17 db @ 13.0 GHz Power Handling 36 dbm ( 1 MHz) High Linearity IIP3 of 65 dbm @ 8.0 GHz IIP2 of 115 dbm @ 8.0 GHz ESD Performance 3kV HBM on all pins 11
PE43704 7-Bit DSA 9 KHz 8 GHz DSA for Test & Measurement/ATE 50Ω 7-bit DSA 9 khz - 8 GHz HaRP technology enhanced Attenuation options: 0.25 db steps to 31.75 db 0.50 db steps to 31.75 db 1.00 db steps to 31.75 db 32-lead 5x5 mm QFN High Power Handling Pin of +28 dbm Supports up to frequency of 8 GHz High linearity of +61 dbm IIP3 Excellent attenuation accuracy Monotonicity 0.25 db steps up to 6 GHz 0.5 db steps up to 7 GHz 1.0 db steps up to 8 GHz Optional V SS bypass to eliminate spurs High Linearity Flexible programming interfaces: serial or parallel (direct and latched). Serial Addressable Pin Compatible with PE43703 IIP3 of 61 dbm ESD performance 1000V HBM 100V MM 12
PE42851: 0.1-1GHz, High Power SP5T Reflective Switch UltraCMOS technology enables High Power re-configurable SP5T/SP3T Switch High Power Switch SP5T RF Switch 100 MHz 1.0 GHz Reflective Dual mode operation: SP3T & SP5T High Power Handling 40 dbm (VSWR 8:1) 32-lead 5x5 mm QFN Low Insertion Loss 0.35 db @ 1GHz High Isolation Fast switching version of PE42851 High power handling of 17W Excellent 2fo & 3fo harmonic performance of -90 dbc Low insertion loss of 0.35 db @ 1GHz Flexibility to configure to a SP3T or SP5T 30 db @ 1GHz Stellar Linearity 2 nd & 3 rd harmonic (VSWR 8:1) of - 82 dbc Return Loss 17dB @ 1GHz Excellent ESD Performance 2kV HBM on all pins
DuNE Digital Tunable Capacitor (DTC) Monolithic variable capacitor controlled by a digital interface. Linear and monotonic tuning curve. Minimal C and Q temperature variance. 14
DTC Application #1 Passive vs. Active Antenna 15 Passive Antenna DTC Active Tuned GSM Quadband, UMTS850(B5), UMTS1900(B2) and LTE700(B17) GSM900(B8), GSM1800, GSM1900, UMTS800(B6), UMTS2100(B1), UMTS 1700/1800(B9) 15
DTC Application #1 Passive vs. Active Antenna 16 Passive Antenna Version Active Antenna Version Volume = 1.4cm 3 Volume = 0.7cm 3 16
Passive vs. Active GSM850 Band 5 Total Isotropic Sensitivity(TIS) GSM850 Band 5 Total Isotropic Sensitivity -102 GSM Spec. -103-104 GSM TIS(dBm) at < 1% BER. -105-106 -107-108 Active Passive -109-110 -111 869 874 879 884 889 894 Frequency(MHz) 17
PE64906/7/8/9: 0.1-3GHz, High Performance DTC s DuNE TM DTC s extend industry leading RF tuning IC portfolio 18 10-lead 2x2 mm QFN Monolithic solution with 3-wire SPI digital interface Wide capacitance tuning range from 0.6pF to 7.7pF High power handling of 34 dbm Superior linearity IIP3 = 65dBm High ESD rating of 2KV on all pins
PE636030 Tuner with Bypass Functional Overview DuNE -enhanced MIPI RFFE tuner with two DTC and three bypass switches Monolithically integrated tuner provides optimal smith chart coverage from 700 to 2700 MHz in 3x3 16-L QFN package Option to include L1/L2 inductors at BP1/BP2 give designers flexibility to achieve optimal performance when antenna is co-designed with tuner Low loss bypass mode available when tuning not required All decoding and biasing is integrated on-chip and no external bypassing or filtering components are required Supports high RF power handling and ruggedness, while meeting challenging harmonic and linearity requirements enabled by Peregrine s HaRP technology Pinout (Top View) Functional Block Diagram VDD GND BP2 RF2 16 15 14 13 SDA 1 12 RF2 SCLK VIO 2 3 GND Paddle 11 10 RF1 RF1 ADDR 4 9 GND 5 6 7 8 DGND GND BP1 GND 19
Improved Bandwidth and Increased Power Delivered to the Antenna Antenna Impedance at 800 MHz 0-1 Transducer Gain - 800 MHz 0-1 Relative Antenna Efficiency (with and without tuner) Ant only With Tuner -2-3 -4-5 50Ω Power Delivered [db] -2-3 -4 + 150 MHz + 4.5dB -6-7 -5-8 Antenna impedance should be inside this contour for optimal performance -6 500 600 700 800 900 1000 1100 1200 Frequency [MHz] Antenna BW improvement with Tuner (LB) 20
Thank you. NASDAQ: PSMI psemi.com 21