Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs

Similar documents
Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs

Infrared Emitting Diode, 950 nm, GaAs

High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero

Infrared Emitting Diode, 950 nm, GaAs

Infrared Emitting Diode, 875 nm, GaAlAs

Infrared Emitting Diode, 950 nm, GaAs

Infrared Emitting Diode, 950 nm, GaAs

Infrared Emitting Diode, 950 nm, GaAs

High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero

Infrared Emitting Diode, 875 nm, GaAlAs

Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs

High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero

High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero

High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero

Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs

Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs

High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero

High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero

High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW

High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW

High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs

Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs

High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs

Infrared Emitting Diode, 950 nm, GaAs

High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero

High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs

High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero

High Power Infrared Emitting Diode, 890 nm, GaAlAs / Double Hetero

High Speed Infrared Emitting Diode, RoHS Compliant, 830 nm, GaAlAs Double Hetero

High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero

High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero

High Speed Infrared Emitting Diode, RoHS Compliant, 850 nm, GaAlAs Double Hetero

High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW

High Speed Infrared Emitting Diode, RoHS Compliant, 870 nm, GaAlAs Double Hetero

High Speed Infrared Emitting Diode, 850 nm, Surface Emitter Technology

Silicon PIN Photodiode, RoHS Compliant

Silicon NPN Phototransistor, RoHS Compliant

Silicon PIN Photodiode, RoHS Compliant

Silicon PIN Photodiode

Silicon PIN Photodiode

High Speed Infrared Emitting Diode, 940 nm, GaAlAs Double Hetero

Silicon PIN Photodiode

High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero

High Speed Infrared Emitting Diodes, 940 nm, Surface Emitter Technology

High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero

Silicon PIN Photodiode, RoHS Compliant

Silicon NPN Phototransistor

Dual Color Emitting Diodes, 660 nm and 940 nm

Silicon PIN Photodiode, RoHS Compliant

High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology

Silicon NPN Phototransistor, RoHS Compliant

High Speed Infrared Emitting Diodes, 940 nm, GaAlAs, MQW

High Power Infrared Emitting Diode, 940 nm, Surface Emitter Technology

High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW

High Speed Infrared Emitting Diode, 850 nm, Surface Emitter Technology

Silicon Photodiode, RoHS Compliant

Silicon NPN Phototransistor, RoHS Compliant

High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW

High Speed Infrared Emitting Diode, 890 nm, GaAlAs, DH

Silicon PIN Photodiode

Silicon PIN Photodiode

High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs

Silicon PIN Photodiode

High Speed Infrared Emitting Diode, 940 nm, GaAlAs Double Hetero

High Speed Infrared Emitting Diode, 940 nm, Surface Emitter Technology

High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology

Silicon PIN Photodiode

Silicon PIN Photodiode

High Speed Infrared Emitting Diodes, 940 nm, Surface Emitter Technology

Silicon PIN Photodiode

Silicon PIN Photodiode, RoHS Compliant

Silicon PIN Photodiode, RoHS Compliant, Released for Lead (Pb)-free Reflow Soldering, AEC-Q101 Released

High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW

Silicon NPN Phototransistor, RoHS Compliant

Silicon PIN Photodiode

Infrared Emitting Diode, 950 nm, GaAs

High Speed Infrared Emitting Diodes, 850 nm, Surface Emitter Technology

Silicon PIN Photodiode

Silicon NPN Phototransistor

Silicon PIN Photodiode, RoHS Compliant

High Speed Infrared Emitting Diode, 850 nm, GaAlAs, DH

Ambient Light Sensor

High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology

Silicon NPN Phototransistor

High Intensity LED in Ø 3 mm Tinted Diffused Package

Silicon NPN Phototransistor

High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology

High Speed Infrared Emitting Diodes, 940 nm, GaAlAs, DH

TSHG6400. High Speed IR Emitting Diode in T-1¾ Package. Vishay Semiconductors

Bicolor Symbol LED in 2.5 mm x 5 mm Untinted Top-Diffused Package

Silicon PIN Photodiode

Ambient Light Sensor

Universal LED in Ø 5 mm Tinted Diffused Package

High Speed Infrared Emitting Diodes, 850 nm, Surface Emitter Technology

High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs

Low Current LED in Ø 5 mm Tinted Diffused Package

Ambient Light Sensor

Silicon PIN Photodiode

Silicon PIN Photodiode

High Speed Infrared Emitting Diodes, 940 nm, GaAlAs, MQW

Transcription:

Infrared Emitting Diode, RoHS Compliant, DESCRIPTION 948642 is an infrared, 95 nm emitting diode in GaAs technology in a hermetically sealed TO-18 package with lens. FEATURES Package type: leaded Package form: TO-18 Dimensions (in mm): 4.7 Peak wavelength: λ p = 95 nm High reliability High radiant power High radiant intensity Angle of half intensity: ϕ = ± 12 Low forward voltage Suitable for high pulse current operation Good spectral matching with Si photodetectors Lead (Pb)-free component in accordance with RoHS 22/95/EC and WEEE 22/96/EC APPLICATIONS Radiation source in near infrared range PRODUCT SUMMARY COMPONENT I e (mw/sr) ϕ (deg) λ P (nm) t r (ns) 6.3 ± 12 95 8 Test conditions see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM Bulk MOQ: pcs, pcs/bulk TO-18 MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V R 5 V Forward current T case 25 C I F 25 ma Peak forward current t p /T =.5, t p µs, T case 25 C I FM 5 ma Surge forward current t p µs I FSM 2.5 A Power dissipation P V 17 mw T case 25 C P V 5 mw Junction temperature T j C Storage temperature range T stg - 55 to + C Thermal resistance junction/ambient leads not soldered R thja 45 K/W Thermal resistance junction/case leads not soldered R thjc 15 K/W www.vishay.com For technical questions, contact: emittertechsupport@vishay.com Document Number: 8148 264 Rev. 1.8, 4-Sep-8

Infrared Emitting Diode, RoHS Compliant, 6 3 P - Power Dissipation (mw) V 5 R thjc 4 3 2 R thja I - Forward Current (ma) F 25 2 15 5 R thja R thjc 1279 25 5 75 125 94 818 2 4 6 8 Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Forward voltage I F = ma, t p 2 ms V F 1.3 1.7 V Temperature coefficient of V F I F = ma TK VF - 1.3 mv/k Breakdown voltage I R = µa V (BR) 5 V Junction capacitance V R = V, f = 1 MHz, E = C j 3 pf Radiant intensity I F = ma, t p = 2 ms I e 4 6.3 32 mw/sr Radiant power I F = ma, t p 2 ms φ e 7 mw Temperature coefficient of φ e I F = ma TKφ e -.8 %/K Angle of half intensity ϕ ± 12 deg Peak wavelength I F = ma λ p 95 nm Spectral bandwidth I F = ma Δλ 5 nm I F = ma t r 8 ns Rise time I F = 1.5 A, t p /T =.1, t p 1 µs t r 4 ns Virtual source diameter d 1 mm BASIC CHARACTERISTICS 1 1 1 4 I F - Forward Current (A) I FSM = 2.5 A (single pause) t p /T=.1 1.5.1.2.5 1-1 1-2 1-1 1 1 1 1 2 94 83 t p - Pulse Duration (ms) Fig. 3 - Pulse Forward Current vs. Pulse Duration IF - Forward Current (ma) 1 3 1 2 1 1 1 1-1 1 2 3 4 94 7996 V F - Forward Voltage (V) Fig. 4 - Forward Current vs. Forward Voltage Document Number: 8148 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com Rev. 1.8, 4-Sep-8 265

Infrared Emitting Diode, RoHS Compliant, 1.2 1.6 V F rel - Relative Forward Voltage (V) 1.1 I F = 1 ma 1..9.8.7 2 4 6 8 94 799 T amb - Ambient Temperature ( C) Φ e rel I e rel ; 1.2.8.4 94 7993 I F = 2 ma - 1 1 5 14 Fig. 5 - Relative Forward Voltage vs. Ambient Temperature Fig. 8 - Relative Radiant Intensity/Power vs. Ambient Temperature 1.25 I - Radiant Intensity (mw/sr) e 1 1.1 1 94 84 t p /T=.1,t p = 2 µs 1 1 1 2 1 3 1 4 I F - Forward Current (ma) Φ e rel - Relative Radiant Power.75.25 94 7994 1..5 I F = ma 9 95 λ - Wavelength (nm) Fig. 6 - Radiant Intensity vs. Forward Current Fig. 9 - Relative Radiant Power vs. Wavelength - Radiant Power (mw) e Φ 1 1.1 1 94 7977 1 1 1 2 1 3 1 4 I F - Forward Current (ma) I e rel - Relative Radiant Intensity 1..9.8.7 94 821.6 1 2 3 4 5 6 7 8.4.2.2.4.6 Fig. 7 - Radiant Power vs. Forward Current Fig. 1 - Relative Radiant Intensity vs. Angular Displacement www.vishay.com For technical questions, contact: emittertechsupport@vishay.com Document Number: 8148 266 Rev. 1.8, 4-Sep-8

Infrared Emitting Diode, RoHS Compliant, PACKAGE DIMENSIONS in millimeters A C 2.54 nom. 5.5 ±.15 Chip position Ø 4.69 +.2 -.7 13.2 ±.7 6.15 ±.25 (2.5) Ø.45 +.2 -.5 technical drawings according to DIN specifications Lens 4 ±.5 Drawing-No.: 6.53-522.2-4 Issue: 1; 24.8.98 14487 Document Number: 8148 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com Rev. 1.8, 4-Sep-8 267

www.vishay.com Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. 217 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 8-Feb-17 1 Document Number: 9