ABA GHz Broadband Silicon RFIC Amplifier. Application Note 1349

Similar documents
Application Note 1360

Surface Mount SOT-363 (SC-70) Package. Pin Connections and Package Marking 4 V CC. Note: Package marking provides orientation and identification.

Surface Mount SOT-363 (SC-70) Package. Pin Connections and Package Marking GND 1 4 V CC

Surface Mount Package SOT-363 (SC-70) Pin Connections and Package Marking. OUTPUT and V d 5 GND 4 V CC

Application Note 5012

87x. MGA GHz 3 V Low Current GaAs MMIC LNA. Data Sheet

Application Note 5011

Surface Mount SOT-363 (SC-70) Package. Pin Connections and Package Marking GND. V dd. Note: Package marking provides orientation and identification.

MGA GHz 3 V, 17 dbm Amplifier. Data Sheet. Features. Description. Applications. Surface Mount Package. Simplified Schematic

MGA GHz 3 V, 17 dbm Amplifier. Data Sheet

Data Sheet. MGA GHz 3 V, 14 dbm Amplifier. Description. Features. Applications. Simplified Schematic

Application Note 5499

N50. 1 GHz Low Noise Silicon MMIC Amplifier. Technical Data INA SOT-143 Surface Mount Package

Application Note 5057

High Intercept Low Noise Amplifier for 1.9 GHz PCS and 2.1 GHz W-CDMA Applications using the ATF Enhancement Mode PHEMT

Application Note 5421

MGA MHz to 6 GHz High Linear Amplifier

Application Note 5460

IAM GHz 3V Downconverter. Data Sheet

A 400, 900, and 1800 MHz Buffer/Driver Amplifier using the HBFP-0450 Silicon Bipolar Transistor

IAM GHz 3V Downconverter. Data Sheet. Features. Description. Applications. Simplified Schematic. Surface Mount Package: SOT-363 (SC-70)

Surface Mount Package SOT-363 (SC-70) Pin Connections and Package Marking GND 1 5 GND. Note: Package marking provides orientation and identification.

Low Noise Amplifier for 3.5 GHz using the Avago ATF Low Noise PHEMT. Application Note 1271

Application Note 5038

AT General Purpose, Low Current NPN Silicon Bipolar Transistor. Data Sheet

ATF High Intercept Low Noise Amplifier for the MHz PCS Band using the Enhancement Mode PHEMT

Application Note 1299

0.1 6 GHz 3V, 17 dbm Amplifier. Technical Data MGA-82563

Agilent IAM GHz 3V Downconverter Data Sheet

Agilent MGA MHz to 6 GHz High Linear Amplifier Data Sheet

Application Note 5488

ATF-531P8 E-pHEMT GaAs FET Low Noise Amplifier Design for 800 and 900 MHz Applications. Application Note 1371

Application Note 1131

ADA-4543 Silicon Bipolar Darlington Amplifier. Data Sheet. 1Tx

Application Note 1373

Data Sheet. 2Tx. ADA-4643 Silicon Bipolar Darlington Amplifier. Description. Features. Specifications. Applications. Surface Mount Package

Application Note 5525

ATF-531P8 900 MHz High Linearity Amplifier. Application Note 1372

Application Note 5482

RF2334. Typical Applications. Final PA for Low Power Applications Broadband Test Equipment

Data Sheet. 3Tx. ADA-4743 Silicon Bipolar Darlington Amplifier. Description

RF3375 GENERAL PURPOSE AMPLIFIER

Application Note 1285

RF3376 General Purpose Amplifier

83x. Data Sheet. MGA dbm P SAT 3 V Power Amplifier for GHz Applications. Description. Features. Applications

SBB-3089Z Pb MHz InGaP HBT Active Bias Gain Block

Application Note 5468

RF2044 GENERAL PURPOSE AMPLIFIER

Features. Specifications. Notes: Package marking provides orientation and identification 53 = Device Code X = Month of Manufacture = Pin 1

Surface Mount Package SOT-363/SC70. Pin Connections and Package Marking. AHx

800 to 950 MHz Amplifiers using the HBFP-0405 and HBFP-0420 Low Noise Silicon Bipolar Transistors. Application Note 1161

RF2317. Laser Diode Driver Return Channel Amplifier Base Stations. CATV Distribution Amplifiers Cable Modems Broadband Gain Blocks

AHx. Data Sheet. ABA GHz Broadband Silicon RFIC Amplifier. Description. Features. Applications. Surface Mount Package: SOT-363 /SC70

NLB-310. Cascadable Broadband GaAs MMIC Amplifier DC to 10GHz

Application Note 1330

MGA-632P8 1.9 GHz low noise amplifier Application Note 5295

RF2044A GENERAL PURPOSE AMPLIFIER

MGA MMIC RF amplifier applications PAG. 1

TOP VIEW 4 C BLOCK. Maxim Integrated Products 1

Product Description. Ordering Information. GaAs HBT GaAs MESFET InGaP HBT

SCG002 HIGH LINEARITY BROADBAND AMPLIFIER

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED

SGA-6489 SGA-6489Z Pb

Application Note 5303

1 MHz to 2.7 GHz RF Gain Block AD8354

PART MAX2605EUT-T MAX2606EUT-T MAX2607EUT-T MAX2608EUT-T MAX2609EUT-T TOP VIEW IND GND. Maxim Integrated Products 1

MGA-725M4 Low Noise Amplifier with Bypass Switch In Miniature Leadless Package. Data Sheet. Description. Features. Applications

Features OBSOLETE. DC GHz GHz GHz GHz GHz

MGA Low Noise Amplifier. Data Sheet. 42x. Features. Description. Applications. Surface Mount Package SOT-343 /4-lead SC70. Simplified Schematic

Data Sheet. VMMK GHz Positive Gain Slope Low Noise Amplifier in SMT Package. Features. Description

IF Digitally Controlled Variable-Gain Amplifier

Features. FREQUENCY 900MHz 1950MHz 2450MHz NF (db) NF (db) IIP3 (dbm) GAIN (db)

HMC478SC70 / 478SC70E v

Application Note No. 124

Application Note 5480

1 MHz to 2.7 GHz RF Gain Block AD8354

Dual-band LNA Design for Wireless LAN Applications. 2.4 GHz LNA 5 GHz LNA Min Typ Max Min Typ Max

HMC639ST89 / 639ST89E

High IP3 Low-Noise Amplifier

OBSOLETE HMC915LP4E. GaAs MMIC MIXER w/ INTEGRATED LO AMPLIFIER, GHz. Typical Applications. Features. Functional Diagram. General Description

Maxim Integrated Products 1

Application Note No. 027

SBB-5089Z GHz, Cascadable Active Bias InGaP HBT MMIC Amplifier

Application Note 5446

Application Note 5295

AG302-86PCB. Product Features. Product Description. Functional Diagram. Applications. Typical Performance (1) Specifications (1)

Data Sheet. AMMC GHz Amplifier. Description. Features. Applications

HMC639ST89 / 639ST89E

Maxim Integrated Products 1

400 MHz to 4000 MHz ½ Watt RF Driver Amplifier ADL5324

SGA7489Z DC to 3000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK

Data Sheet. AMMP GHz High Gain Amplifier in SMT Package. Description. Features. Applications. Package Diagram. Functional Block Diagram

MGA Low Noise Amplifier. Data Sheet. Features. Description. Applications. Surface Mount Package SOT-343 /4-lead SC70. Simplified Schematic

DESIGN APPLICATION NOTE --- AN011 SXT-289 Balanced Amplifier Configuration

AMMC KHz 40 GHz Traveling Wave Amplifier

40MHz to 4GHz Linear Broadband Amplifiers

0.5-4GHz Low Noise Amplifier

Gain and Return Loss vs Frequency. s22. Frequency (GHz)

DESCRIPTIO FEATURES APPLICATIO S. LT GHz to 2.7GHz Receiver Front End TYPICAL APPLICATIO

HMC580ST89 / 580ST89E. Features OBSOLETE. DC GHz GHz GHz. db db db Gain Variation Over Temperature DC GHz 0.

Transcription:

ABA-52563 3.5 GHz Broadband Silicon RFIC Amplifier Application Note 1349 Introduction Avago Technologies ABA-52563 is a low current silicon gain block RFIC amplifier housed in a 6-lead SC 70 (SOT- 363) surface mount plastic package. Providing a nominal gain of 21.5 db and P1dB of 9.7 dbm at 2 GHz, this device is ideal for small signal gain stage or IF amplification. Distinguished features of the ABA-52563 are high gain, good input and output VSWR, and broad bandwidth mak- ing this device useful in various applications including Cellular, Cordless, Special Mobile Radio, PCS, ISM, Wireless LAN, DBS, TVRO, and TV Tuner applications. In addition to the ABA-52563, Avago Technologies also offers a series of ABA devices with a range of P1dB. The table below is a quick reference on the performance of the series measured at 2 GHz on the board. Symbol Unit ABA-51563 ABA-52563 ABA-53563 P1dB dbm 1.8 9.7 12.5 OIP3 dbm 11.4 20.1 22.6 Icc ma 18 35 46 Gp db 21.5 21.5 21.5 NF db 3.7 3.2 3.5 VSWR in 1.3 1.2 1.2 VSWR out 1.3 1.4 1.3 Note: Demoboard performance comparison at 2 GHz using the circuit and components described in the section 2 GHz Narrowband Example.

Application Guidelines The ABA-52563 is designed with a two-stage cascade consisting in general of a single input transistor driving a Darlington connected output pair. Resistive feedback is used to set the RF performance. The collector of the first stage directly drives the base of the output stage without any interstage blocking capacitor that would limit the low frequency response. The second stage, fed back using both series and shunt resistors, sets the match, gain and flatness of the RFIC. The Avago Technologies HP25 silicon bipolar process with a cut off frequency, f T, of 25 GHz results in a device with low current draw and useful operation up to 3.5 GHz. The ABA-52563 is very easy to use. For most applications, all that is required to operate the device is to apply a voltage to Pin 4 (Vcc) and Pin 6 (Output and Vcc). All bias regulation circuitry is integrated into the RFIC. RF Input and Output The RF Input and Output ports of the ABA-52563 are closely matched to 50Ω. DC Bias The ABA-52563 is a voltage-biased device that operates at 5V with a nominal current of 35 ma. Figure 1 shows a typical implementation of the ABA-52563. The supply voltage for the ABA 52563 must be applied to two terminals, the Vcc and the RF Output pins. The Vcc connection to the amplifier is RF bypassed by placing a capacitor to ground near the Vcc pin of the amplifier package. The power supply connection to the RF Output pin is achieved by means of an RF choke (inductor). The reactance of the RF choke must be relatively higher than 50Ω in order to prevent loading of the RF Output. Blocking capacitors are normally placed in series with the RF Input and RF Output to isolate the DC voltages on these pins from the circuit adjacent to the amplifier. The values of the blocking capacitors are selected to provide a reactance at the lowest frequency of operation that is relatively smaller than 50Ω. PCB Layout The ABA-52563 is packaged in the miniature SOT-363 (SC-70) surface mount package. A PCB pad layout for the SOT-363 package is shown in Figure 2. This layout provides ample allowance for package placement by automated assembly equipment without adding pad parasitic that could impair the high frequency performance of the ABA-52563. The layout is shown with a nominal SOT-363 package footprint superimposed on the PCB pads for reference. Figure 2. PCB Pad Layout. Dimensions are in inches (millimeters). PCB Materials Typical choices for PCB material for low cost wireless applications are FR-4 or G-10 with a thickness of 0.025 or 0.032 inches. A thickness of 0.062 inches is the maximum that is recommended for use with this particular device. The use of a thicker board material increases the inductance of the plated through vias used for RF grounding and may deteriorate circuit performance. Adequate grounding is needed not only to obtain maximum amplifier performance, but also to reduce any possibility of instability. C block RF Output 2Hx RFC RF Input C block C bypass Vcc Figure 1. Typical Application Circuit. 2

Examples Using the Demoboard Demoboard Description An example layout for an amplifier using the ABA-52563 is shown in Figure 3. This example uses a microstripline design (solid ground plane on the backside of the circuit board). The circuit board material is 0.032-inch thick FR-4. Plated through-holes (vias) are used to bring the ground to the topside of the circuit where needed. Multiple vias are used to reduce the inductance of the path to ground. INPUT Figure 3. RF Layout. ABA-5XX63 DEMO BOARD OUTPUT Vcc Passive Component Values The capacitor s reactance is chosen to be 10% or less of the amplifier s input or output impedance at the lowest operating frequency. For example, an amplifier to be used in an application covering the 2 GHz band would require an input blocking capacitor of at least 16 pf, which is 5Ω of reactance at 2 GHz. The Vcc connection to the amplifier must be RF bypassed by placing a capacitor to ground at the bias pad of the board. Like the DC blocking capacitors, the value of the Vcc bypass capacitor is determined by the lower operating frequency for the amplifier. The reactance of the RF choke should be large compared to 50Ω. A typical value for 2 GHz amplifier would be 22 nh which is about 266Ω. For this demonstration board, capacitor C3 provides RF bypassing for both the Vcc pin and the power supply end of the RFC. Capacitor C4 is optional and may be used to add additional bypassing for the Vcc line. A well bypassed Vcc line is especially necessary in cascades of amplifier stages to prevent oscillation that may occur as a result of RF feedback through the power supply lines. Since the gain of the ABA-52563 extends down to DC, the frequency response of the amplifier is limited only by the values of the capacitors and choke. 2 GHz Narrowband Example Based on the calculation in the previous section on 2 GHz applications, the value chosen for the RF choke was 22 nh. All of the blocking and bypass capacitors are 18 pf. These values provide excellent amplifier performance at 2 GHz as depicted in the comparison table on the first page. 50 MHz to 2 GHz Wideband Example Larger values for the choke and capacitors can be used to extend the lower end of the bandwidth. For wideband applications from 50 MHz to 2 GHz, 620 nh was chosen for the RF choke and 1000 pf for the blocking and bypass capacitors. Figure 4 shows an assembled amplifier. The +5 volt supply is fed directly into the Vcc pin of the ABA-52563 and into the RF Output pin through the RF choke (RFC). ABA-5XX63 DEMO BOARD DC blocking capacitors are required at the input and output of the IC. The values of blocking capacitors are determined by the lowest frequency of operation for a particular application. INPUT C1 C3 2Hx C2 RFC OUTPUT C4 Vcc Figure 4. Assembled Amplifier. 3

Table 1 consists of the components used to assemble both boards. The measurements of the wideband application can be seen in Figures 5, 6, and 7. A convenient method for making RF connection to the demonstration board is to use a PCB mounting type of SMA connector (Johnson 142-0701-881 or equivalent). These connectors can be slipped over the edge of the PCB and the center conductors soldered to the input and output lines. The ground pins of the connectors are soldered to the ground plane on the backside of the board. The extra ground pins for the top of the board are not needed and can be clipped off. Design for Other Frequencies RF design software such as Avago Technologies AppCad is very handy to determine the values of the blocking capacitors and RF choke for any operating frequency. This software is available at http://www. Avagotech.com/view/AppCad Table 1. List of Components. Component Value Part number 2 GHz C1, C2, C3 18 pf Garret 0603CG180J9B20 RFC 22 nh Coilcraft 1008CS-220XMBC C4 (optional) 390 pf 50 MHz C1, C2, C3 1000 pf Murata GRM40X7R102K50 to 2 GHz RFC 620 nh Coilcraft 1008CS-621XXKBC1 C4 (optional) 1 µf GAIN, NOISE FIGURE, ISOLATION, INPUT and OUTPUT RL (db) 30 20 10 0-10 -20-30 -40-50 SMA Connectors Johnson 142-0701-881 1 2 3 4 FREQUENCY (GHz) Figure 5. Gain, Noise Figure, Isolation, Input and Output Return Loss Results as measured on the wideband board. NF Gain Input RL Isolation Output RL 24 22-55ϒC 25ϒC 125ϒC 20 GAIN (db) 18 16 14 12 10 1000 2000 3000 4000 FREQUENCY (GHz) Figure 6. Gain vs. Frequency and Temperature as measured on the wideband board. 4

30 20 P out (dbm) 10 0-10 2 GHz P 1dB -20-30 -40-30 -20-10 0 P in (dbm) Figure 7. P1dB as measured on the wideband board. INPUT C1 2Hx OUTPUT C2 RFC C3 Figure 8. Magnified Assembled Board. 5

Notes on RF Grounding As a direct result of the circuit topology discussed in the earlier paragraph, the performance of ABA-52563 is extremely sensitive to ground path ( emitter ) inductance. The two-stage design potentially creates a feedback loop being formed through the ground returns of the stages. If the path to ground provided by the external circuit is long (high in impedance) compared to the path back through the ground return of the other stage, instability can occur. This feedback loop formed through the ground returns is illustrated in Figure 9. This phenomenon can show up as a peaking in the gain versus frequency response (perhaps creating a negative gain slope amplifier), an increase in input VSWR, or even as return gain (a reflection coefficient greater than unit) at the input of the RFIC. Evidently, an excellent grounding is critical when using the ABA 52563. The use of plated through-holes or equivalent minimal path ground returns right at the device is essential. The designs should be done on the thinnest substrate that is practical. The parasitic inductance of a pair of vias passing through 0.032-inch thick PC board is approximately 0.1 nh, while that of a pair via holes passing through 0.062 inches is closer to 0.5 nh. It is recommended that the PCB trace for the ground pins NOT be connected together underneath the body of the package. PCB pads hidden under the package cannot be adequately inspected for SMT solder quality. These stability effects are entirely predictable. A circuit simulation using the datasheet S parameters and including a description of the ground path (via model or equivalent emitter inductance) will give an accurate picture of the performance that can be expected. Device characterizations are made with the ground leads of the ABA-52563 directly contacting a solid copper block (system ground) at a distance of 2 to 4 mils from the body of the package. Thus, the information in the datasheet is a true description of the performance capability of the RFIC and contains minimal contributions from the test fixture. Phase Reference Planes The positions of the reference planes used to measure S parameters for this device are shown in Figure 10. As seen in the illustration, the reference planes are located at the point where the package leads contact the test circuit. Gnd 2 & 5 Gnd 1 Figure 9. ABA Potential Ground Loop. Figure 10. Phase Reference Plane. For product information and a complete list of distributors, please go to our web site: www.avagotech.com Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Limited in the United States and other countries. Data subject to change. Copyright 2006-2010 Avago Technologies, Limited. All rights reserved. Obsoletes 5988-9198EN 5988-9468EN August 28, 2010