BC856BDW1T1, BC857BDW1T1 Series, BC858CDW1T1 Series Preferred Devices Dual General Purpose Transistors PNP Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT363/SC88 which is designed for low power surface mount applications. Q 1 (3) (2) (1) Q 2 Features PbFree Packages are Available (4) (5) (6) MAXIMUM RATINGS CollectorEmitter oltage CollectorBase oltage Rating Symbol alue Unit BC856 BC857 BC858 BC856 BC857 BC858 CEO CBO 65 45 8 EmitterBase oltage EBO 5. Collector Current Continuous I C 1 madc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation Per Device FR5 Board (Note 1) Derate Above 25 C P D 38 25 3. mw mw/ C Thermal Resistance, JunctiontoAmbient Junction and Storage Temperature Range R JA 328 C/W T J, T stg 55 to +15 C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR5 = x.75 x.62 in SOT363/SC88 CASE 419B STYLE 1 MARKING DIAGRAM Preferred devices are recommended choices for future use and best overall value. 1 3x M 3x = Specific Device Code x = B, F, G, or L (See Ordering Information) M = Date Code = PbFree Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Semiconductor Components Industries, LLC, 25 November, 25 Rev. 6 1 Publication Order Number: BC856BDW1T1/D
ELECTRICAL CHARACTERISTICS ( unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown oltage (I C = 1 ma) BC856 Series BC857 Series CollectorEmitter Breakdown oltage (I C = 1 A, EB = ) BC856 Series BC857B Only (BR)CEO (BR)CES 65 45 8 CollectorBase Breakdown oltage (I C = 1 A) BC856 Series BC857 Series (BR)CBO 8 EmitterBase Breakdown oltage (I E = A) BC856 Series BC857 Series (BR)EBO 5. 5. 5. Collector Cutoff Current ( CB = ) Collector Cutoff Current ( CB =, T A = 15 C) I CBO 15 4. na A ON CHARACTERISTICS DC Current Gain (I C = 1 A, CE = 5. ) BC856B, BC857B BC857C, BC858C h FE 15 27 (I C = ma, CE = 5. ) BC856B, BC857B BC857C, BC858C CollectorEmitter Saturation oltage (I C = 1 ma, I B =.5 ma) (I C = 1 ma, I B = 5. ma) BaseEmitter Saturation oltage (I C = 1 ma, I B =.5 ma) (I C = 1 ma, I B = 5. ma) BaseEmitter On oltage (I C = ma, CE = 5. ) (I C = 1 ma, CE = 5. ) SMALLSIGNAL CHARACTERISTICS CurrentGain Bandwidth Product (I C = 1 ma, CE = 5. dc, f = 1 MHz) Output Capacitance ( CB = 1, f = MHz) Noise Figure (I C =.2 ma, CE = 5. dc, R S = k, f = khz, BW = 2 Hz) CE(sat) BE(sat) 22 42 BE(on).6 29 52.7.9 475 8.3.65.75.82 f T 1 MHz C ob 4.5 pf NF 1 db 2
TYPICAL CHARACTERISTICS BC856 hfe, DC CURRENT GAIN (NORMALIZED).5.2 CE = 5., OLTAGE (OLTS).8.6.4.2 BE(sat) @ I C /I B = 1 BE @ CE = 5. CE(sat) @ I C /I B = 1.1.2 5. 1 2 1 2.2.5 5. 1 2 1 2 Figure 1. DC Current Gain Figure 2. On oltage CE, COLLECTOREMITTER OLTAGE (OLTS) 1.6 1.2.8.4 I C = 1 ma 2 ma ma.2.5.1.2.5 5. 1 I B, BASE CURRENT (ma) 1 ma 2 ma 2 B, TEMPERATURE COEFFICIENT (m/ C) θ 1.4 1.8 B for BE 55 C to 125 C 2.2 2.6 3..2.5 5. 1 2 1 2 Figure 3. Collector Saturation Region Figure 4. BaseEmitter Temperature Coefficient C, CAPACITANCE (pf) 4 2 C ib 1 8. 6. C ob 4..1.2.5 5. 1 2 1 R, REERSE OLTAGE (OLTS) f, T CURRENTGAIN BANDWIDTH PRODUCT 5 2 1 5 2 CE = 5. 1 1 Figure 5. Capacitance Figure 6. CurrentGain Bandwidth Product 3
TYPICAL CHARACTERISTICS BC857/BC858 hfe, NORMALIZED DC CURRENT GAIN 1.5.7.5.3.2.2 CE = 1 I C, COLLECTOR CURRENT (madc), OLTAGE (OLTS).9.8.7.6.5.4.3.2.1 BE(sat) @ I C /I B = 1 BE(on) @ CE = 1 CE(sat) @ I C /I B = 1.5 5. 1 2 1 2.1.2.5 5. 1 2 1 I C, COLLECTOR CURRENT (madc) Figure 7. Normalized DC Current Gain Figure 8. Saturation and On oltages CE, COLLECTOREMITTER OLTAGE () 1.6 1.2.8.4 I C = 1 ma I C = 2 ma I C = ma.2.1 1 I B, BASE CURRENT (ma) I C = 2 ma I C = 1 ma 2 B, TEMPERATURE COEFFICIENT (m/ C) θ 1.2 1.6 2.4 2.8 55 C to +125 C.2 1 1 Figure 9. Collector Saturation Region Figure 1. BaseEmitter Temperature Coefficient C, CAPACITANCE (pf) 1 7. 5. 3..4 C ib C ob.6 4. 6. 1 2 4 R, REERSE OLTAGE (OLTS) f, T CURRENTGAIN BANDWIDTH PRODUCT (MHz) 4 3 2 15 1 8 6 4 3 2.5 I C, COLLECTOR CURRENT (madc) CE = 1 3. 5. 1 2 Figure 11. Capacitances Figure 12. CurrentGain Bandwidth Product 4
D =.5 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED).1.1.2.1.5.2.1 P (pk) t 1 t2 Z JA (t) = r(t) R JA R JA = 328 C/W MAX D CURES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t 1 T J(pk) T C = P (pk) R JC (t) DUTY CYCLE, D = t 1 /t 2.1 SINGLE PULSE 1 1 k 1 k 1 k M t, TIME (ms) Figure 13. Thermal Response IC, COLLECTOR CURRENT (ma) 2 1 1 5. BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 3 ms 5. 1 45 65 1 CE, COLLECTOREMITTER OLTAGE () Figure 14. Active Region Safe Operating Area 1 s BC558 BC557 BC556 The safe operating area curves indicate I C CE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 14 is based upon T J(pk) = 15 C; T C or T A is variable depending upon conditions. Pulse curves are valid for duty cycles to 1% provided T J(pk) 15 C. T J(pk) may be calculated from the data in Figure 13. At high case or ambient temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by the secondary breakdown. ORDERING INFORMATION Device Device Marking Package Shipping BC856BDW1T1 3B SOT363 BC856BDW1T1G 3B SOT363 (PbFree) 3, / Tape & Reel BC856BDW1T3 3B SOT363 BC856BDW1T3G 3B SOT363 (PbFree) 1, / Tape & Reel BC857BDW1T1 3F SOT363 BC857BDW1T1G 3F SOT363 (PbFree) 3, / Tape & Reel BC857CDW1T1 3G SOT363 BC857CDW1T1G 3G SOT363 (PbFree) 3, / Tape & Reel BC858CDW1T1 3L SOT363 BC858CDW1T1G 3L SOT363 (PbFree) 3, / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD811/D. 5
PACKAGE DIMENSIONS SC88 (SOT363) CASE 419B2 ISSUE D e NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419B1 OBSOLETE, NEW STANDARD 419B2. H E 6 5 4 1 2 3 E b 6 PL.2 (.8) M E M A A3 C MILLIMETERS DIM MIN NOM MAX A.8.95 1.1 A1..5.1 A3 b.1.21.3 C.1.14.25 D 1.8 2.2 E 1.15 1.25 1.35 e.65 BSC L.1.2.3 H E 2.1 2.2 INCHES MIN NOM MAX.31.37.43..2.4.2 REF.8 REF.4.8.12.4.5.1.7.78.86 STYLE 1: PIN 1. EMITTER 2 2. BASE 2 3. COLLECTOR 1 4. EMITTER 1 5. BASE 1 6. COLLECTOR 2.45.49.53.26 BSC.4.8.12.78.82.86 A1 L.5.197 SOLDERING FOOTPRINT*.65.25.4.157.65.25 1.9.748 SCALE 2:1 mm inches *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85821312 USA Phone: 48829771 or 8344386 Toll Free USA/Canada Fax: 48829779 or 83443867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 82829855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 291 Kamimeguro, Meguroku, Tokyo, Japan 15351 Phone: 8135773385 6 ON Semiconductor Website: Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. BC856BDW1T1/D