Standard ectifier Module 3~ ectifier M = 1400 I = 60 A DA FSM = 550 I A 3~ ectifier Bridge Part number - ~ ~ ~ + Features / Advantages: Applications: Package: PWS-D Package with DCB ceramic Improved temperature and power cycling Planar passivated chips ery low forward voltage drop ery low leakage current Diode for main rectification For three phase bridge configurations Supplies for DC power equipment Input rectifiers for PWM inverter Battery DC power supplies Field supply for DC motors Industry standard outline ohs compliant Easy to mount with two screws Base plate: Copper internally DCB isolated Advanced power cycling
ectifier Symbol SM M I I Definition = 1400 = 1400 J T = 150 C atings min. typ. max. 1500 F forward voltage drop I = 20 A 1.07 F T C = 120 C thermal resistance junction to case 1.1 K/W DA max. non-repetitive reverse blocking voltage reverse current I = F Conditions I F = 60 A 20 A I F = 60 A J max. repetitive reverse blocking voltage J F0 threshold voltage T J = 150 C 0.78 for power loss calculation only r F slope resistance 8.1 mω thjc thch bridge output current thermal resistance case to heatsink rectangular d = ⅓ P tot total power dissipation T C = 25 C 110 W I FSM max. forward surge current t = 10 ms; (50 Hz), sine T J = 45 C 550 A = 0 595 A t = 10 ms; (50 Hz), sine T J = 150 C 470 A = 0 505 A I²t value for fusing t = 10 ms; (50 Hz), sine T J = 45 C 1.52 ka²s = 0 1.48 ka²s t = 10 ms; (50 Hz), sine T J = 150 C 1.11 ka²s = 0 1.06 ka²s J J T = 125 C C J junction capacitance = 400 ; f = 1 MHz 19 J T J = 150 C 1400 40 1.5 1.30 0.96 1.27 60 Unit µa ma A K/W J pf
Package PWS-D atings Symbol Definition Conditions min. typ. max. Unit I MS MS current per terminal 150 A T stg storage temperature -40 125 C T J virtual junction temperature -40 150 C Weight M D M T d Spp/App d Spb/Apb ISOL mounting torque 4.25 terminal torque 4.25 creepage distance on surface striking distance through air isolation voltage t = 1 second t = 1 minute terminal to terminal terminal to backside 50/60 Hz, MS; I ISOL 1 ma 9.5 26.0 3000 2500 159 5.75 5.75 g Nm Nm mm mm Product Number Made in Germany Circuit Diagram XXXX-XXXX YYCW Lot# Date Code Ordering Standard Part Number Marking on Product Delivery Mode Quantity Code No. Box 10 461687 Equivalent Circuits for Simulation * on die level T J = 150 C I ectifier 0 0 0 max threshold voltage 0.78 0 max slope resistance * 6.9 mω
Outlines PWS-D - ~ ~ ~ +
ectifier 100 500 50 Hz 0.8 x M 10000 =0 80 I F [A] 60 40 I FSM [A] 400 300 T J =150 C T J =45 C I 2 t 1000 [A 2 s] T J =45 C T J =150 C 20 T J = 125 C 150 C T J =25 C 0 0.8 1.2 1.6 F [] 200 0.001 0.010 0.100 1.000 t [s] 100 1 t [ms] 10 Fig. 1 Forward current vs. voltage drop per diode Fig. 2 Surge overload current vs. time per diode Fig. 3 I 2 t vs. time per diode P tot 30 20 DC = 1 0.5 0.33 0.17 0.08 thja : 0.6 KW 0.8 KW 1 KW 2 KW 4 KW 8 KW 100 80 60 I F(A)M DC = 1 0.5 0.33 0.17 [W] 10 Graph 1* [A] 40 0.08 20 0 0 10 20 0 25 50 75 100 125 150 175 I dam [A] T A [ C] Fig. 4 Power dissipation vs. forward current and ambient temperature per diode 0 0 25 50 75 100 125 150 T C [ C] Fig. 5 Max. forward current vs. case temperature per diode 1.2 Constants for Z thjc calculation: 0.8 Z thjc [K/W] i th (K/W) t i (s) 1 0.05 0.001 2 0.14 0.030 3 0.25 0.060 4 0.35 0.130 5 0.31 0.920 0.0 1 10 100 1000 10000 t [ms] Fig. 6 Transient thermal impedance junction to case vs. time per diode
Mouser Electronics Authorized Distributor Click to iew Pricing, Inventory, Delivery & Lifecycle Information: IXYS: