R9x SERIES A REGULATOR (Operating Voltage up to V) No.EA-83-92 OUTLINE The R9x series are a low supply current voltage regulator with high output voltage accuracy. The maximum operating voltage is V. Each of these ICs consists of a voltage reference unit, an error amplifier, a resistor-net for voltage setting, as a short current protection, a peak current protection, a thermal shutdown, an inrush current limit and a chip enable circuit. The wide input voltage range (Max. V). Additionally, the output voltage is fixed internally, in the range from 2.V to 2.V by the.v steps. The supply current of R9x series is excellent (Typ.μA) moreover R9x series has the standby mode (Typ..μA) by the chip enable function. Since the package for these ICs are TO-252-5-P2, SOT-89-5 and HSOP-J with high power dissipation, high density mounting of the ICs on boards is possible. FEATURES Wide Range of Operating Voltage...Min.V High Output Voltage Accuracy...±.5% Output Voltage...Stepwise setting with a step of.v in the range of 2.V to 2.V is possible Supply Current...Typ.μA (V IN = +2.V, 3.3V output) Extremely Low Standby Current...Typ..μA Output Current...Min. A (V IN = +2.V, 3.3V output) Packages...TO-252-5-P2, HSOP-J, SOT-89-5, Built-in functions Peak Current Protection Circuit Short Current Protection Circuit Thermal Shutdown Circuit Inrush Current Limit Circuit Others The Delay Pin for setting Inrush Current Limit Time. Operating Temperature Range...-4 C to 85 C APPLICATIONS Power source for digital home appliances Power source for audio visual equipments Rev..
R9x BLOCK DIAGRAMS R9xxxxB R9xxxxD Thermal Protection Thermal Protection V IN V IN Vref Vref Short Protection Inrush Current Limit Peak Current Protection Short Protection Inrush Current Limit Peak Current Protection CE GND CE GND DELAY DELAY SELECTION GUIDE The output voltage, version, package and the taping type for the ICs can be selected at the user s request. The selection can be made with designating the part number as shown below; R9x xxx x-xx-xx Part Number a b c d e Code a b Contents Designation of Package Type: H : SOT-89-5 S : HSOP-J J : TO-252-5-P2 Setting Output Voltage ( ): Stepwise setting with.v increment in the range from 2.V to 2.V Designation of Active Type: c B: active high type* D: active high, with auto discharge* Designation of Taping Type (Refer to Taping Specifications) d T: SOT-89-5, TO-252-5-P2 E2: HSOP-J Designation of composition of pin plating: e -F: Lead free solder plating *When the mode is into standby with CE signal, auto-discharge transistor turns on, and it makes the turn-off speed faster than normal type. 2
R9x PIN CONFIGURATION TO-252-5-P2 SOT-89-5 HSOP-J 5 4 5 4 2 3 4 5 PIN DESCRIPTIONS R9J: TO-252-5-P2 2 3 2 3 Pin No. Symbol Description DELAY Delay Pin (for setting Inrush Current Limit Time) 2 V DD Input Pin 3 GND Ground Pin 4 Output Pin 5 CE Chip Enable Pin ( H Active) R9S: HSOP-J Pin No. Symbol Description Output Pin 2 GND Ground Pin 3 CE Chip Enable Pin ( H Active) 4 DELAY Delay Pin (for setting Inrush Current Limit Time) 5 GND Ground Pin V DD Input Pin R9H: SOT-89-5 Pin No. Symbol Description Output Pin 2 GND Ground Pin 3 CE Chip Enable Pin ( H Active) 4 DELAY Delay Pin (for setting Inrush Current Limit Time) 5 V DD Input Pin 3
R9x ABSOLUTE MAXMUM RATINGS Symbol Item Rating Unit V IN Input Voltage -.3 to8 V V CE Input Voltage (CE Pin) -.3 to V IN +.3 = 8 V Output Voltage -.3 to V IN +.3 = 8 V I OUT Output Current ma P D Power Dissipation * TO-252-5-P2 9 HSOP-J 7 SOT-89-5 9 Ta Ambient Temperature Range - 4 to + 85 C Tstg Storage Temperature Range - 55 to + C *For Power Dissipation, please refer to PACKAGE INFORMATION (p.~) to be described. mw ABSOLUTE MAXIMUM RATINGS Electronic and mechanical stress momentarily exceeded absolute maximum ratings may cause the permanent damages and may degrade the life time and safety for both device and system using the device in the field. The functional operation at or over these absolute maximum ratings is not assured. 4
R9x ELECTRICAL CHARACTERISTICS V IN =CE=Set + 2.V, C IN =4.7µF, C OUT =4.7µF, I OUT =ma unless otherwise noted. values indicate 4 C = Ta = 85 C, unless otherwise noted. R9xxxx Symbol Item Conditions MIN. TYP. MAX. Unit Output Voltage I OUT =ma x.985 x.5 V -4 C = Ta = 85 C x.973 x.27 I OUT Output Current Please see the following table *() Δ /ΔI OUT Load Regulation Please see the following table *(2) V DIF Dropout Voltage Please see the following table *(3) I SS Supply Current I OUT =ma 22 µa Istandby Δ /ΔV IN RR Supply Current (CE Off State) Line Regulation Ripple Rejection V IN =V V CE =V +.5V(Min. 3.5V) I OUT =ma f=khz I OUT =ma = V IN = V.. µa.2. %/V db V IN Input Voltage 3.5 V Δ /ΔTa Output Voltage Temperature Coefficient I OUT =ma -4 C = Ta = 85 C I LIM Short Current Limit =V 3 ma V CEH CE Input Voltage "H". V IN V V CEL CE Input Voltage "L".. V T TSD T TSR R LOW Thermal Shutdown Temperature Thermal Shutdown Released Temperature Nch On Resistance for Auto Discharge (D Version Only) ± Junction Temperature C Junction Temperature 3 C V IN =5.V V CE =V =.3V ppm / C Ω The specification in is checked and guaranteed by design engineering. All of units are tested and specified under pulse load conditions such that Tj except for Ripple Rejection, Output Voltage Temperature Coefficient items, Thermal Shutdown, Load Regulation at.ma = = ma(2. = 2.5V) and at.ma = = 7mA(2.5 = 3.3V) and at.ma = = ma(3.3 = = 2.V), Dropout Voltage at I OUT =ma(2. = 2.5V) and at I OUT =7mA(2.5 = 3.3V) and at I OUT =ma(3.3 = = 2.V) RECOMMENDED OPERATING CONDITIONS (ELECTRICAL CHARACTERISTICS) All of electronic equipment should be designed that the mounted semiconductor devices operate within the recommended operating conditions. The semiconductor devices cannot operate normally over the recommended operating conditions, even if when they are used over such conditions by momentary electronic noise or surge. And the semiconductor devices may receive serious damage when they continue to operate over the recommended operating conditions. 5
R9x *() Output Current Output Voltage (V) Condition Output Current I OUT (ma) Min. 2. = 2.5 2.5 = 3.3 V IN + +2.3V 7 3.3 = = 2. *(2) Load Regulation Output Voltage (V) Load Regulation Δ /ΔI OUT (mv) Condition Typ. Max. ma = I OUT = 2mA 2 2. = 2.5 V IN + +2.3V ma = I OUT = ma 8 8 ma = I OUT = 2mA 2 2.5 = 3.3 V IN + +2.3V ma = I OUT = 7mA 9 2 ma = I OUT = 2mA 2 3.3 = 5. V IN + +2.3V ma = I OUT = ma 2 23 5. = = 2. V IN + +2.3V ma ma = I OUT = 2mA 4 = I OUT = ma 3 2 *(3) Dropout Voltage Output Voltage (V) Dropout Voltage V DIF (V) Condition Typ. Max. 2..5 2..4 Output Voltage (V) Dropout Voltage V DIF (V) Condition Typ. Max. 2.2.3 2. = 2.5 I OUT =ma. 2.2 2.3.2 2.4. 2.5. 2. I OUT =2mA.9 2.7.8 2.5 = 3.3 I OUT =7mA.5 2.5 2.8 = 3..7 3. = 3.3.4.7 3.3 = 4..3.53. 2.3 4. = 5..25.42.4 2. 3.3 5. = = 2. I OUT =ma = 9..9.3..85 9. = = 2...8.8.3
R9x TEST CIRCUITS V DD C R9x Series C2 V I OUT V IN CE GND DELAY Fig. Basic Test Circuit V DD A C R9x Series C2 V IN CE DELAY GND Fig.2 Test Circuit for Supply Current 7
R9x Pulse Generator P G V DD R9x Series C2 I OUT CE DELAY GND Fig.3 Test Circuit for Ripple Rejection V DD C R9x Series C2 V IN CE DELAY GND I OUT a I OUT b Fig.4 Test Circuit for Load Transient Response 8
R9x TECHNICAL NOTES When using these ICs, consider the following points: Phase Compensation In these ICs, phase compensation is made for securing stable operation even if the load current is varied. For this purpose, use a capacitor C OUT with good frequency characteristics and ESR (Equivalent Series Resistance). (Note: If additional ceramic capacitors are connected with parallel to the output pin with an output capacitor for phase compensation, the operation might be unstable. Because of this, test these ICs with as same external components as ones to be used on the PCB.) PCB Layout Make V DD and GND lines sufficient. If their impedance is high, noise pickup or unstable operation may result. Connect a capacitor with a capacitance value as much as 4.7μF or more between V DD and GND pin, and as close as possible to the pins. Set external components, especially the output capacitor, as close as possible to the ICs, and make wiring as short as possible. (Refer to the TYPICAL APPLICATION diagram below) Thermal Shutdown Function There is the built-in thermal-shutdown function in R9 series. It discontinues operation of the IC when the junction temperature becomes over C (Typ.) and IC re-operates when the junction temperature under 3 C. If the temperature increasing keeps the IC repeats ON and OFF operating. The output becomes the pulse condition. Chip Enable (CE) Circuit For the output voltage stability, please do not use the intermediate electric potential (the voltage value between V CEH and V CEL ) that causes the supply current increasing and the unstable of output voltage. Inrush-Current Limit Function R9 Series has the function to limit the inrush-current, it limited approximately.4a when the voltage regulator is turn ON. It is also possible to set time of the rush-current limitation by connecting capacitor with DELAY pin. The rush-current time (t D ) and the value of capacitor (C D [F]) is calculatable by the following formula; t D =(.98 + (3.79e+7 x C D )) x V IN The inrush-current is limited even if the capacitor is not connected with the DELAY pin. In this case, the time is calculated as C D = by the formula above. Though, if the value of time is insufficient for controlling the inrush-current, please connect the capacitor with DELAY pin. The DELAY pin is used as OPEN when the capacitor is not used. Please use the DELAY pin as OPEN when the capacitor is not used. Auto-Discharge Function R9xxxxD series has the auto-discharge function. When "L" signal is put into the Chip-enable pin (CE), the switch between and GND is turned ON and the charge at capacitor is discharged rapidly by the auto-discharge function. V IN V DD C IN CE R9x Series DELAY GND C D C OUT * DELAY pin is OPEN when C D pin is not used. TYPICAL APPLICATION (External Components) C IN : 4.7μF C OUT : 4.7μF 9
R9x POWER DISSIPATION (TO-252-5-P2) This specification is at mounted on board. Power Dissipation (P D ) depends on conditions of mounting on board. This specification is based on the measurement at the condition below: Measurement conditions Standard land pattern Environment Mounting on board (Wind velocity m/s) Board Material Glass cloth epoxy plastic (Double layers) Board Dimensions mm * mm * t.mm Copper Ratio Top side: Approx. %, Back side: Approx. % Through - hole φ.5mm * 24pcs Measurement Results Power Dissipation Thermal Resistance Standard land pattern 9mW θja = (25-25 C)/.9W= 53 C/W (, Tjmax=25 C) TO-252-5 Power Dissipation (mw) tion PD Power Dissipa 22 2 9 8 On Board 4 2 8 4 2 25 75 85 25 Ambient Temperature ( C) Measurent Board Pattern IC Mount Area Unit : mm Rev..
R9x POWER DISSIPATION (SOT-89-5) This specification is at mounted on board. Power Dissipation (P D ) depends on conditions of mounting on board. This specification is based on the measurement at the condition below: Measurement Conditions High Wattage Land Pattern Standard Land Pattern Environment Mounting on Board (Wind velocity=m/s) Mounting on Board (Wind velocity=m/s) Board Material Glass cloth epoxy plastic (Double sided) Glass cloth epoxy plastic (Double sided) Board Dimensions 3mm * 3mm *.mm mm * mm *.mm Copper Ratio Top side : Approx. 2%, Back side : Approx. % Top side : Approx. %, Back side : Approx. % Through-hole φ.85mm * pcs - Measurement Result (,Tjmax=25 C) High Wattage Land Pattern Standard Land Pattern Free Air Power Dissipation 3mW 9mW mw Thermal Resistance 77 C/W C/W 2 C/W Power Dissipation PD (mw) 4 3 2 9 8 7 4 3 2 On Board (High Wattage Land Pattern) On Board (Standard Land Pattern) Free Air 3 3 7.5 5 7.5 5 High Wattage Standard 25 75 85 25 Ambient Temperature ( C) Power Dissipation Measurent Board Pattern IC Mount Area Unit : mm
R9x POWER DISSIPATION (HSOP-J) This specification is at mounted on board. Power Dissipation (P D ) depends on conditions of mounting on board. This specification is based on the measurement at the condition below: Measurement Conditions High Wattage Land Pattern Standard Land Pattern Environment Mounting on Board (Wind velocity=m/s) Mounting on Board (Wind velocity=m/s) Board Material Glass cloth epoxy plastic (Double sided) Glass cloth epoxy plastic (Double sided) Board Dimensions mm * mm *.mm mm * mm *.mm Copper Ratio 9% % Through-hole φ.5mm * 24pcs φ.5mm * 24pcs Measurement Result (,Tjmax=25 C) High Wattage Land Pattern Standard Land Pattern Free Air Power Dissipation 2mW 7mW 54mW Thermal Resistance C/W 59 C/W 85 C/W mw) ower Dissipation P D ( P 2 24 22 2 8 4 2 8 4 2 7 54 On Board (High Wattage Land Pattern) On Board (Standard Land Pattern) Free Air 25 75 85 25 Ambient Temperature ( C) Power Dissipation 49 8 2 High Wattage 4 2 Measurent Board Pattern IC Mount Area Unit : mm Standard 2
TYPICAL CHARACTERISTICS - Output Voltage vs. Output Current C IN =4.7μF, C OUT =4.7μF R9x 2.5 R9x2x 4. 2.5 R9x33x Topt=25 Output Voltage (V) 2..5..5 4.5V 4.V 3.5V V IN =3.V Output Voltage (V) 3. 2.. 2..5 V IN =4.3V..5 4.8V 5.8V 5.3V...5..5 2. Output Current I OUT (A).. -.5..5..5..5..5 2. Output Current I OUT (A) R9xx R9x9x.. Output Voltage VOUT (V) 5. 4. 3. 2.. V IN =.V.5V 7.5V 7.V Output Voltage (V) 8.. 4. 2. V IN =.V.V.5V.5V...5..5 2. Output Current I OUT (A)...5..5 2. Output Current I OUT (A) Output Voltage (V) 4. 2.. 8.. 4. 2. R9x2x 3.5V 4.V 4.5V V IN =3.V Symbol V DD V SET +.V V SET +.5V V SET +2.V V SET +2.5V...5..5 2. Output Current I OUT (A) 3
R9x -2.Output Volgae vs. Input Voltage C IN =4.7μF, C OUT =4.7μF R9x2x R9x33x 2.5 4. Output Voltage (V) 2..5..5 -ma -ma -ma Output Voltage (V) 3. 2.. -ma -ma -ma. 2 4. 2 4. R9xx. R9x9x Output Voltage (V) 5. 4. 3. 2.. -ma -ma -ma Output Voltage (V) 8.. 4. 2. -ma -ma -ma. 2 4 8. 3 9 2 4. R9x2x Symbol I OUT =ma I OUT =ma I OUT =ma Output Voltage (V) 2.. 8.. 4. 2. -ma -ma -ma. 4 8 2 4
-3.Supply Current vs. Input Voltage Supply Current I SS (μa) 8 4 2 8 4 2 R9x2x 4 8 2 C IN =4.7μF, C OUT =4.7μF Supply Current I SS (μa) 8 4 2 8 4 2 R9x33x 4 8 2 R9x Supply Current I SS (μa) 8 4 2 8 4 2 R9xx 4 8 2 Supply Current I SS (μa) 8 4 2 8 4 2 R9x9x 4 8 2 Supply Current I SS (μa) 8 4 2 8 4 2 R9x2x 4 8 2 5
R9x -4.Output voltage vs. Temperature C IN =4.7μF, C OUT =4.7μF 2.3 R9x2x V IN =4.V I OUT =ma 3. R9x33x V IN =5.3V I OUT =ma Output Voltage (V) 2.2 2. 2..9.8 Output Voltage (V) 3.5 3.4 3.3 3.2 3..7 - -25 25 75 Ambient Temperature Ta ( C ) 3. - -25 25 75 Ambient Temperature Ta ( C ) 5.3 R9xx V IN =7.V I OUT =ma 9. R9x9x V IN =.V I OUT =ma Output Voltage (V) 5.2 5. 5. 4.9 4.8 Output Voltage (V) 9.4 9.2 9. 8.8 8. 4.7 - -25 25 75 Ambient Temperature Ta ( C ) 8.4 - -25 25 75 Ambient Temperature Ta ( C ) Output Voltage (V) 2. 2.4 2.2 2..8. R9x2x V IN =4V I OUT =ma.4 - -25 25 75 Ambient Temperature Ta ( C )
-5.Supply Current vs. Temperature C IN =4.7μF, C OUT =4.7μF R9x 2 R9x2x V IN =4.V 2 R9x33x V IN =5.3V Supply Current I SS (μa) 2 Supply Current I SS (μa) 2 - -25 25 75 Ambient Temperature Ta ( C ) - -25 25 75 Ambient Temperature Ta ( C ) R9xx R9x9x 2 V IN =7.V 2 V IN =.V Supply Current I SS (μa) 2 Supply Current I SS (μa) 2 - -25 25 75 Ambient Temperature Ta ( C ) - -25 25 75 Ambient Temperature Ta ( C ) 2 R9x2x V IN =4.V Supply Current I SS (μa) 2 - -25 25 75 Ambient Temperature Ta ( C ) 7
R9x -.Dropout Voltage vs. Output Current C IN =4.7μF, C OUT =4.7μF 2 R9x2x 2 R9x33x Dropout Voltage V DIF (mv) 2 85-4 C 25 C Dropout Voltage V DIF (mv) 2 25 C 85-4 C 2 4 8 Output Current(mA) 2 4 8 Output Current(mA) 2 R9xx 2 R9x9x Dropout Voltage V DIF (mv) 2 25 C 85 C -4 Dropout Voltage V DIF (mv) 2 25 C 85 C -4 C 2 4 8 Output Current(mA) 2 4 8 Output Current(mA) 2 R9x2x Symbol VDD -4 C 25 C 85 C Dropout Voltage V DIF (mv) 2 25 C 85 C -4 C 2 4 8 Output Current(mA) 8
R9x -7.Dropout Voltage vs. Set Output Voltage C IN =4.7μF, C OUT =4.7μF Dropout Voltage V DIF (mv) 2 7 2 7 2 Iout=mA 2 4 8 2 4 Set Output Voltage(V) Iout=mA Iout=7mA Iout=mA Iout=2mA Iout=mA Iout=mA 9
R9x -8.Ripple Rejection vs. Input Voltage C IN =Open, C OUT =4.7μF Input Ripple=.2Vp-p I OUT =ma 7 R9x2x 7 R9x33x Ripple Rejection RR (db) 4 3 2 khz khz khz Ripple Rejection RR (db) 4 3 2 khz khz khz 3.5 4.5 5.5.5 3.5 4.5 5.5.5 R9xx R9x9x 7 7 Ripple Rejection RR (db) 4 3 2 khz khz khz Ripple Rejection RR (db) 4 3 2 khz khz khz 5 7 8 9 2 Ripple Rejection RR (db) 7 4 3 2 R9x2x khz khz khz 2 3 4 5 Symbol khz khz khz 2
R9x -9.Ripple Rejection vs. Frequency C IN =Open, C OUT =4.7μF Input Ripple=.2Vp-p R9x2x R9x33x Ripple Rejection RR (db) 9 8 7 4 3 2 Iout=mA Iout=mA Iout=2mA V IN =4.V Frequency f (khz) Ripple Rejection RR (db) 9 8 7 4 3 2 Iout=mA Iout=mA Iout=2mA V IN =5.3V Frequency f (khz) Ripple Rejection RR (db) 9 8 7 4 3 2 R9xx Iout=mA Iout=mA Iout=2mA V IN =7.V Frequency f (khz) Ripple Rejection RR (db) 9 8 7 4 3 2 R9x9x Iout=mA Iout=mA Iout=2mA V IN =.V Frequency f (khz) Ripple Rejection RR (db) 9 8 7 4 3 2 R9x2x Iout=mA Iout=mA Iout=2mA V IN =4.V Frequency f (khz) Symbol I OUT =ma I OUT =ma I OUT =2mA 2
R9x -.Input Transient Response V IN =V SET +2 V SET +3 C IN =Open, C OUT =4.7μF PER=4μs, WID=2μs, Tr=Tf=.5μs R9x2x R9x33x 2.2 I OUT =ma 3. I OUT =ma 7.3 Output Voltage (V) 2.5 2. 2.5 2..95 V IN 5 4 3 2 Output Voltage (V) 3.45 3.4 3.35 3.3 3.25 V IN.3 5.3 4.3 3.3 2.3.9-2 2 3 3.2-2 2 3.3 5.2 R9xx I OUT =ma 9 9.2 R9x9x I OUT =ma 3 Output Voltage (V) 5.5 5. 5.5 5. 4.95 V IN 8 7 5 4 Output Voltage (V) 9.5 9. 9.5 9. 8.95 V IN 2 9 8 4.9-2 2 3 3 8.9-2 2 3 7 R9x2x 2.2 I OUT =ma Output Voltage (V) 2.5 2. 2.5 2..95 V IN 5 4 3 2.9-2 2 3 22
-.Load Transient Response 2. V SET 3.3 :V IN =CE=V SET +2.3V, I OUT =ma 7mA,C IN =4.7μF, C OUT =4.7μF 3.3 V SET 2. :V IN =CE=V SET +2.3V, I OUT =ma ma,c IN =4.7μF, C OUT =4.7μF PER=4μs, WID=2μs, Tr=Tf=.5μs R9x 3. R9x2x V IN =4.3V 4.3 R9x33x V IN =5.V Output Voltage (V) 2.8 2. 2.4 2.2 2..8 I OUT V OUT Output Current I OUT (ma) Output Voltage (V) 4. 3.9 3.7 3.5 3.3 3. I OUT Output Current I OUT (ma). - 2 2 3 2.9-2 2 3 R9xx R9x9x 7.5 V IN =7.3.5 V IN =.3 Output Voltage (V) 7..5. 5.5 5. 4.5 I OUT Output Current I OUT (ma) Output Voltage (V)..5. 9.5 9. 8.5 I OUT Output Current I OUT (ma) 4. - 2 2 3 8. - 2 2 3 Output Voltage (V) 4.5 4. 3.5 3. 2.5 2..5 R9x2x I OUT V IN =4.3V Output Current I OUT (ma). - 2 2 3 23
R9x -2.Turn On Speed with CE Pin V IN =V SET +2V I OUT =ma C IN =4.7μF, C OUT =4.7μF PER=ms, WID=μs, Tr=Tf=.5μs R9x2x V IN =4V 2 R9xx V IN =7V 9 Output Voltage (V) 5 4 3 2 V CE 4 2 Input Voltage V CE (V) Output Voltage (V) 8 4 2 V CE 3 Input Voltage V CE (V) - 2 2 3-2 2 3 8 R9x9x V IN =V 5 24 R9x2x V IN =4V 2 Output Voltage (V) 5 2 9 3 V V CE OUT 5 Input Voltage V CE (V) Output Voltage (V) 2 2 8 4 V CE 4 7 Input Voltage V CE (V) - 2 2 3-2 2 3 24
R9x -3.Turn Off Speed with CE Pin V IN =V SET +2V I OUT =ma C IN =4.7μF, C OUT =4.7μF PER=ms, WID=μs, Tr=Tf=.5μs R9x2x V IN =4 V 2 R9xx V IN =7V 9 Output Voltage (V) 5 4 3 2 V V CE OUT 4 2 Input Voltage V CE (V) Output Voltage (V) 8 4 2 V V CE OUT 3 Input Voltage V CE (V) - 2 2 3-2 2 3 2 R9x9x V IN =V 5 28 R9x2x V IN =4V 2 Output Voltage (V) 8 5 2 9 3 V V CE OUT 5 Input Voltage V CE (V) Output Voltage (V) 24 2 2 8 4 V V CE OUT 4 7 Input Voltage V CE (V) - 2 2 3-2 2 3 25
R9x -4.Inrush Current at Turn On V IN =7V C IN =4.7μF, C OUT =4.7μF Cdelay=Open PER=ms, WID=μs, Tr=Tf=.5μs Input Voltage V CE ( V) Output Voltage (V) 9 3 R9xx V CE Inrush Current - 2 2 3.2..8..4.2. Inrush Current (A) Symbol CE Inrush current 2
R9x -5.Inrush Current Limit vs. Cdelay C IN =4.7μF, C OUT =4.7μF Inrush Current Limitation Delay Time (ms) 7 5 4 3 2 R9xx V IN =7V 5 5 2 Cdelay(pF) 27
R9x -.Inrush Current Limiataion Dealy Time vs. Input Voltage C IN =4.7μF, C OUT =4.7μF Cdelay=.5pF Cdelay=OPEN 28
R9x -7.Thermal Shut Down vs. TemperaturC IN =4.7μF, C OUT =4.7μF Output Voltage (V) 8 7 5 4 3 2 R9xx V IN =V Rload=kΩ 25 75 25 75 2 Ambient Temperature Ta ( C ) 29
R9x -8.ESR vs. Output Current Mesurement Conditions > Input Voltage :V SET +2.3V~.V Frequency Band :Hz~MHz Temperature :-4 C ~85 C Hatched Area :Noise level is under 4μVrms(Ave.) Capacitor :C IN =Ceramic 4.7μF (KTDB475M43AT) C OUT =Ceramic 4.7μF (KTDB475M43AT) C OUT =Ceramic.μF (FK22Y5VHZ) R9x2x VIN=4.3V to.v CIN=Ceramic 4.7μF COUT=Ceramic 4.7μF R9x2x VIN=4.3V to.v CIN=Ceramic 4.7μF COUT=Ceramic.μF ESR (Ω) ESR (Ω)... 2 3 4 Output Current I OUT (ma). 2 3 4 Output Current I OUT (ma) R9x33x VIN=5.V to.v CIN=Ceramic 4.7μF COUT=Ceramic 4.7μF R9x33x VIN=5.V to.v CIN=Ceramic 4.7μF COUT=Ceramic.μF ESR (Ω) ESR (Ω)... 2 4 8 Output Current I OUT (ma). 2 4 8 Output Current I OUT (ma) 3
R9x R9xx VIN=7.3V to.v CIN=Ceramic 4.7μF COUT=Ceramic 4.7μF R9xx VIN=7.3V to.v CIN=Ceramic 4.7μF COUT=Ceramic.μF ESR (Ω) ESR (Ω)... 2 4 8 Output Current I OUT (ma). 2 4 8 Output Current l OUT (ma) R9x9x VIN=.3V to.v CIN=Ceramic 4.7μF COUT=Ceramic 4.7μF R9x9x VIN=.3V to.v CIN=Ceramic 4.7μF COUT=Ceramic.μF ESR (Ω) ESR (Ω)... 2 4 8 Output Current l OUT (ma). 2 4 8 Output Current l OUT (ma) R9x2x VIN=4.3V to.v CIN=Ceramic 4.7μF COUT=Ceramic 4.7μF R9x2x VIN=4.3V to.v CIN=Ceramic 4.7μF COUT=Ceramic.μF ESR (Ω) ESR (Ω)... 2 4 8 Output Current I OUT (ma). 2 4 8 Output Current I OUT (ma) 3