TOSHIBA Bipolar Digital Integrated Circuit Silicon Monolithic

Similar documents
TD62383PG TD62383PG. 8 ch Low Input Active Sink Driver. Features. Pin Assignment (top view) Schematics (each driver)

TD62081AP,TD62081AF,TD62082AP,TD62082AF TD62083AP,TD62083AF,TD62084AP,TD62084AF

ULN2803APG,ULN2803AFWG,ULN2804APG,ULN2804AFWG (Manufactured by Toshiba Malaysia)

TD62318APG,TD62318AFG

TD62783AP,TD62783AF,TD62784AP,TD62784AF

TD62308AP,TD62308AF TD62308AP/AF. 4ch Low Input Active High-Current Darlington Sink Driver. Features. Pin Assignment (top view)

TD62786AP,TD62786AF,TD62787AP,TD62787AF

TD62502PG,TD62502FG,TD62503PG,TD62503FG

ULN2803AP,ULN2803AFW,ULN2804AP,ULN2804AFW (Manufactured by Toshiba Malaysia)

ULN2003AP,ULN2003AFW,ULN2004AP,ULN2004AFW (Manufactured by Toshiba Malaysia)

TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC

ULN2803AP,ULN2803AFW,ULN2804AP,ULN2804AFW (Manufactured by Toshiba Malaysia)

TA7291P, TA7291S/SG, TA7291F/FG

TD62083AFNG,TD62084AFNG

TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD62771AP

TD62064APG, TD62064AFG

ULN2803APG,ULN2803AFWG,ULN2804APG,ULN2804AFWG

TOSHIBA BiCD Digital Integrated Circuit Silicon Monolithic TB62756FUG

TB62726ANG,TB62726AFG

TCA62724FMG TCA62724FMG. 3-Channel Constant-Current LED Driver. Features TOSHIBA CMOS Integrated Circuits Silicon Monolithic

TD62308APG,TD62308AFG

TBD62387APG, TBD62387AFNG

TOSHIBA Bi CMOS INTEGRATED CIRCUIT SILICON MONOLITHIC TB62707FG. 8BIT PIPO (Pallalel In, Pallalel Out) CONSTANT CURRENT DRIVERS

TBD62308AFAG TBD62308AFAG. TOSHIBA BiCD Integrated Circuit Silicon Monolithic. 4channel Low active high current sink type DMOS transistor array

TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA8050FG

TOSHIBA BiCD Digital Integrated Circuit Silicon Monolithic TB62736FUG

2SC5353 2SC5353. Switching Regulator and High Voltage Switching Applications High-Speed DC-DC Converter Applications. Maximum Ratings (Tc = 25 C)

TB62747AFG,TB62747AFNG, TB62747AFNAG,TB62747BFNAG

2SD1508 2SD1508. Pulse Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications. Maximum Ratings (Ta = 25 C)

TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington Power) 2SD

TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT MULTI-CHIP TA84002F/FG PWM CHOPPER-TYPE 2 PHASE BIPOLAR STEPPING MOTOR DRIVER

TA8254BHQ TA8254BHQ. Max Power 45 W BTL 2 ch Audio Power IC. Features TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic

2SC2873 2SC2873. Power Amplifier Applications Power Switching Applications. Maximum Ratings (Ta = 25 C)

2SA2066 2SA2066. High-Speed Switching Applications DC-DC Converter Applications. Maximum Ratings (Ta = 25 C) Electrical Characteristics (Ta = 25 C)

2SC3657 2SC3657. Switching Regulator and High-Voltage Switching Applications High-Speed DC-DC Converter Applications. Maximum Ratings (Tc = 25 C)

TA8435H/HQ TA8435H/HQ PWM CHOPPER-TYPE BIPOLAR STEPPING MOTOR DRIVER. FEATURES TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC

2SC5784 2SC5784. High-Speed Switching Applications DC-DC Converter Applications. Maximum Ratings (Ta = 25 C) Electrical Characteristics (Ta = 25 C)

TOSHIBA Multi-Chip Transistor Silicon NPN & PNP Epitaxial Type TPC6901. Rating Unit C/W

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Darlington power transistor) 2SD1508

TBD62083APG, TBD62083AFG, TBD62083AFNG, TBD62083AFWG TBD62084APG, TBD62084AFG, TBD62084AFNG, TBD62084AFWG

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2655

TOSHIBA Transistor Silicon PNP Epitaxial Type TPC

TC74AC05P,TC74AC05F,TC74AC05FN

TA8205AHQ,TA8205ALQ Features

TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5886

TC74AC14P,TC74AC14F,TC74AC14FN,TC74AC14FT

TOSHIBA Transistor Silicon NPN Epitaxial Type TPCP8701. Characteristics Symbol Rating Unit

TC74AC00P,TC74AC00F,TC74AC00FN,TC74AC00FT

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1145

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3423

2SD2638 2SD2638. Horizontal Deflection Output for Color TV, Digital TV High Speed Switching Applications. Maximum Ratings (Tc = 25 C)

GT30J322 GT30J322 FOURTH-GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS. MAXIMUM RATINGS (Ta = 25 C) EQUIVALENT CIRCUIT MARKING

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2406. JEDEC Storage temperature range T stg 55 to 150 C

TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1930

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1145. JEDEC TO-92MOD Storage temperature range T stg 55 to 150 C

TC74ACT139P,TC74ACT139F,TC74ACT139FN,TC74ACT139FT

TOSHIBA Bi-CMOS Linear Integrated Circuit Silicon Monolithic TB2929HQ. High output power Weight: 7.7 g (typ.) P OUT MAX (1) = 45 W (typ.

TC74AC367P,TC74AC367F,TC74AC367FN,TC74AC367FT

GT50J301 GT50J301 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS. MAXIMUM RATINGS (Ta = 25 C) EQUIVALENT CIRCUIT

TC74ACT74P,TC74ACT74F,TC74ACT74FN,TC74ACT74FT

TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4793

TC74VHC32F,TC74VHC32FN,TC74VHC32FT,TC74VHC32FK

TC4011BP,TC4011BF,TC4011BFN,TC4011BFT

TC74ACT540P,TC74ACT540F,TC74ACT540FW,TC74ACT540FT TC74ACT541P,TC74ACT541F,TC74ACT541FW,TC74ACT541FT

2SC6033 2SC6033. High-Speed Swtching Applications DC-DC Converter Applications Storobe Flash Applications. Maximum Ratings (Ta = 25 C)

TOSHIBA BiCD Digital Integrated Circuit Silicon Monolithic TB62752AFUG GND

TOSHIBA Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit TPD2005F

TOSHIBA Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit TPD2007F

TC74HC540AP,TC74HC540AF,TC74HC540AFW TC74HC541AP,TC74HC541AF,TC74HC541AFW

TC74LCX07F,TC74LCX07FN,TC74LCX07FT,TC74LCX07FK

TA7259P, TA7259F/FG TA7259P/F/FG 3-PHASE BRUSHLESS DC MOTOR DRIVER IC FEATURES TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC

TC74VHC14F,TC74VHC14FN,TC74VHC14FT,TC74VHC14FK

TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5612

TC74HC240AP,TC74HC240AF,TC74HC240AFW TC74HC241AP,TC74HC241AF TC74HC244AP,TC74HC244AF,TC74HC244AFW

TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5858

TC74HC4066AP,TC74HC4066AF,TC74HC4066AFN,TC74HC4066AFT

TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J301

TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J322

TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA8429H, TA8429HQ

GT8G133 GT8G133. Strobe Flash Applications. Absolute Maximum Ratings (Ta = 25 C) Circuit Configuration. Thermal Characteristics.

TOSHIBA Bi-CD Integrated Circuit Silicon Monolithic TB6633FNG/AFNG

TOSHIBA Bi-CMOS Linear Integrated Circuit Silicon Monolithic TB2926HQ. High output power Weight: 7.7 g (typ.) P OUT MAX (1) = 45 W (typ.

TOSHIBA CMOS Integrated Circuit Silicon Monolithic TB6575FNG

TC7WH04FU,TC7WH04FK TC7WH04FU/FK. Triple Inverter. Features. Marking. Pin Assignment (top view)

查询 D2553 供应商 2SD2553 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2553. DC I C 8 A Pulse I CP 16

TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J324

GT60M323 GT60M323. Voltage Resonance Inverter Switching Application Unit: mm. Maximum Ratings (Ta = 25 C) Thermal Characteristics. Equivalent Circuit

TPCP8J01 8J01 TPCP8J01. Notebook PC Applications Portable Equipment Applications. Absolute Maximum Ratings (Ta = 25 C) MOSFET. Circuit Configuration

UNISONIC TECHNOLOGIES CO., LTD LINEAR INTEGRATED CIRCUIT

TLP631,TLP632 TLP631,TLP632. Programmable Controllers AC / DC Input Module Solid State Relay. Pin Configurations (top view)

TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA8050F

TLP627,TLP627-2,TLP627-4

GT50J325 GT50J325. High Power Switching Applications Fast Switching Applications. Maximum Ratings (Ta = 25 C) Thermal Characteristics

TOSHIBA Bi-CMOS Linear Integrated Circuit Silicon Monolithic TB2923HQ. High output power Weight: 7.7 g (typ.) P OUT MAX (1) = 50 W (typ.

TOSHIBA BiCD Integrated Circuit Silicon Monolithic TB62214AFG

4N35(Short), 4N36(Short), 4N37(Short)

CNY17-2,CNY17-3,CNY17-4

TA7736P,TA7736F TA7736P/F DC MOTOR DRIVER IC FEATURES TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC

TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT45F123

TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60J323H

Transcription:

TOSHIBA Bipolar Digital Integrated Circuit Silicon Monolithic TD6251PG,TD6251FG,TD6252PG,TD6252FG,TD6253PG,TD6253FG,TD6254PG TD6254FG,TD6255PG,TD6255FG,TD6256PG,TD6256FG,TD6257PG,TD6257FG 7ch Single Driver, TD6252PG/FG, TD6253PG/FG, TD6254PG/FG Common emitter TD6255PG/FG, TD6256PG/FG Common collector Isolated TD6251PG, TD6252PG, TD6253PG, TD6254PG, TD6255PG, TD6256PG, TD6257PG The Series are comprised of seven or five NPN transistor arrays. For proper operation, the substrate (SUB) must be connected to the most negative voltage. Applications include relay, hammer, lamp and display (LED) drivers. The suffix (G) appended to the part number represents a Lead (Pb)-Free product. Features Output current (single output) 2 ma (max) High sustaining voltage output 35 V (min) Inputs compatible with various types of logic., TD6255PG/FG and : Using external resistor General Purpose TD6252PG/FG : RIN = 1.5 kω + 7 V Zener Diode 14 to 25 V P-MOS TD6253PG/GF, TD6256PG/FG : RIN = 2.7 kω TTL, 5 V C-MOS TD6254PG/FG: RIN = 1.5 kω 6 to 15 V P-MOS, C-MOS Package Type-PG: DIP-16 pin Package Type-FG: SOP-16 pin TD6251FG, TD6252FG, TD6253FG, TD6254FG, TD6255FG, TD6256FG, TD6257FG Weight DIP16-P-3-2.54A: 1.11g (typ.) SOP16-P-225-1.27:.16g (typ.) 1

Pin Assignment (top view), TD6252PG/FG TD6253PG/FG, TD6254PG/FG TD6255PG/FG, TD6256PG/FG O1 O2 O3 O4 O5 O6 O7 NC 16 15 14 13 12 11 1 9 O1 O2 O3 O4 O5 O6 O7 COM-C 16 15 14 13 12 11 1 9 1 2 3 4 5 6 7 8 I1 I2 I3 I4 I5 I6 I7 COM-E 1 2 3 4 5 6 7 8 I1 I2 I3 I4 I5 I6 I7 SUB E5 B5 C4 E4 B4 B3 E3 C3 16 15 14 13 12 11 1 9 *: NC pin assignment The NC pin is not assigned to an internal chip of these products; hence, no need to assign necessarily. If it is needed, Toshiba recommends that you connect the NC pin to the common emitter (GND). 1 2 3 4 5 6 7 8 C5 C1 E1 B1 SUB C2 E2 B2 Schematics (each driver) Output Input Common emitter TD6252PG/FG Output Input 7 V 1.5 kω 1 kω Common emitter TD6253PG/FG TD6254PG/FG Output Input R 1 1 kω Common emitter TD6253PG/FG R 1 = 2.7 kω, TD6254PG/FG R 1 = 1.5 kω : Parasitic diodes Note: The input and output parasitic diodes cannot be used as clamp diodes. 2

Schematics (Each driver) TD6255PG/FG Common collector SUB Output TD6256PG/FG Common collector Input SUB 2.7 kω Output GND (SUB) : Parasitic diodes Note: The input and output parasitic diodes cannot be used as clamp diodes. Absolute Maximum Ratings () Characteristics Symbol Rating Unit Collector-emitter voltage V CEO 35 V Collector-base voltage V CBO 5 V Collector current I C 2 ma/ch Input voltage V IN (Note 1).5 to 45 V V IN (Note 2).5 to 3 Input current I IN (Note 3) 25 ma Isolation voltage V SUB 35 V Power dissipation PG 1. W FG P D.625 (Note 4) Operating temperature T opr 4 to 85 C Storage temperature T stg 55 to 15 C Note 1: TD6256PG/FG Note 2: TD6252PG/FG, TD6253PG/FG, TD6254PG/FG Note 3:, TD6255PG/FG, Note 4: On Glass Epoxy PCB (3 3 1.6 mm Cu 5%) 3

Recommended Operating Conditions (Ta = 4 to 85 C) Characteristics Symbol Condition Min Typ. Max Unit Collector-emitter voltage V CEO 35 V Collector-base voltage V CBO 5 V Collector current I C 15 ma/ch Input voltage TD6256PG/FG V IN 35 V Input voltage (Output on) Input voltage (Output off) Input current Power dissipation TD6252PG/FG 14. 25 TD6253PG/FG V IN (ON) I IN = 1 ma, I C = 1 ma 2.4 25 V TD6254PG/FG 7. 25 TD6252PG/FG 7. TD6253PG/FG V IN (OFF) I C 1 µa.4 V TD6254PG/FG.8 TD6255PG/FG I IN 1 ma PG P D.36 W FG (Note 1).325 Note 1: 3 3 1.6 mm Cu 5% Electrical Characteristics () Characteristics Symbol Test Circuit Test Condition Min Typ. Max Unit Output leakage current I CEX 1 V CE = 25 V, V IN = V 1 µa Collector-emitter saturation voltage V CE (sat) 2 DC Current transfer ratio I IN = 1 ma, I C = 1 ma.2 I IN = 3 ma, I C = 15 ma (Note 1).8 (Note 2) h FE 2 V CE = 1 V, I C = 1 ma 7 (Note 3) 5 Turn-on delay t ON 4 V OUT = 35 V, R L = 3.3 kω 5 ns Turn off delay t OFF 4 C L = 15 pf 2 ns Note 1: Except TD6252PG/FG Only Note 2: Only, TD6255PG/FG, TD6256PG/FG, Note 3: Only TD6252PG/FG, TD6253PG/FG, TD6254PG/FG V 4

Test Circuit 1. I CEX 2. h FE, V CE (sat) 3. V IN (ON) I IN I C I IN I C Open V CE V CE, V CE (sat) V IN (ON) V IN I CEX h FE = I C I IN 4. t ON, t OFF Input V OUT = 35 V t r t f Pulse generator (Note 1) R 1 B C (Note 2) E R L = 3.3 kω Output C L = 15 pf (Note 3) 9% Input 5% 1% t ON 5 µs 9% 5% 1% t OFF V IH V OH Output 5% 5% V OL Note 1: Pulse width 5 µs, Duty cycle 1% Output impedance 5 Ω, tr 5 ns, tf 1 ns Note 2: See below Input Condition Type Number R 1 V IH 2.7 kω 3 V TD6252PG/FG Ω 15 V TD6253PG/FG Ω 3 V TD6254PG/FG Ω 1 V TD6255PG/FG 2.7 kω 3 V TD6256PG/FG Ω 3 V 2.7 kω 3 V Note 3: C L includes probe and jig capacitance Precautions for Using This IC does not integrate protection circuits such as overcurrent and overvoltage protectors. Thus, if excess current or voltage is applied to the IC, the IC may be damaged. Please design the IC so that excess current or voltage will not be applied to the IC. Utmost care is necessary in the design of the output line, VCC and GND line since IC may be destroyed due to short-circuit between outputs, air contamination fault, or fault by improper grounding. 5

Collector current IC (ma) 12 1 8 6 4 2 I C I B TD6255PG/FG Emitter grounded VCE = 3 V Collector current IC (ma) 12 1 8 6 4 2 I C V CE.7.6 TD6255PG/FG Emitter grounded.5.4.3.2 IB =.1 ma.2.4.6.8 1 2 3 Base current I B (ma) Collector-emitter voltage V CE (V) Base-emitter voltage VBE (V) Collector-emitter saturation voltage VCE (sat) (V) 1..8.6 V BE I B.4 TD6255PG/FG Emitter grounded.2.2.4.6.8 1.3.1.3.1.3 TD6255PG/FG VCE (sat) VCE = 3 V Base current I B (ma) V CE (sat) I C IC/IB = 25 IC/IB = 1 DC current transfer ratio hfe Power dissipation PD (W) 1.2 1..8.6.4.2 1 3 1 (1) (2) (3) P D Ta (1) Type-PG FREE AIR (2) Type-FG ON PCB 3 3 1.6 mm Cu 5% On glass Epoxy PCB (3) Type-FG FREE AIR 25 5 75 1 125 3 1 3 TD6255PG/FG Ambient temperature Ta ( C) h FE I C hfe (VCE = 1 V) 15.1.1.3 1 3 1 3 1 Collector current I C (ma) 1.1.3 1 3 1 3 1 Collector current I C (ma) 6

8 I IN V IN 4 TD6252PG/FG I IN V IN Input current IIN (ma) 6 4 2 IOUT = 25 ma 5 1 Input current IIN (ma) 3 2 1 IOUT = 25 to 1 ma.2.4.6.8 1. Input voltage V IN (V) 1 2 3 4 5 Input voltage V IN (V) 4 TD6253PG/FG I IN V IN 4 TD6254PG/FG I IN V IN Input current IIN (ma) 3 2 1 Input current IIN (ma) 3 2 1 IOUT = 25 to 1 ma IOUT = 25 to 1 ma 4 8 12 16 2 Input voltage V IN (V) 1 2 3 4 5 Input voltage V IN (V) 12 I C V CE (sat) Collector current IC (ma) 2 ma 1 ma 1 8 7 µa 6 IIN = 5 µa 4 2.2.4.6.8 1. 1.2 1.4 Output saturation voltage V CE (sat) 7

Package Dimensions Weight: 1.11 g (typ.) 8

Package Dimensions Weight:.16 g (typ.) 9

Notes on Contents 1. Equivalent Circuits The equivalent circuit diagrams may be simplified or some parts of them may be omitted for explanatory purposes. 2. Test Circuits Components in the test circuits are used only to obtain and confirm the device characteristics. These components and circuits are not guaranteed to prevent malfunction or failure from occurring in the application equipment. IC Usage Considerations Notes on Handling of ICs (1) The absolute maximum ratings of a semiconductor device are a set of ratings that must not be exceeded, even for a moment. Do not exceed any of these ratings. Exceeding the rating(s) may cause the device breakdown, damage or deterioration, and may result injury by explosion or combustion. (2) Use an appropriate power supply fuse to ensure that a large current does not continuously flow in case of over current and/or IC failure. The IC will fully break down when used under conditions that exceed its absolute maximum ratings, when the wiring is routed improperly or when an abnormal pulse noise occurs from the wiring or load, causing a large current to continuously flow and the breakdown can lead smoke or ignition. To minimize the effects of the flow of a large current in case of breakdown, appropriate settings, such as fuse capacity, fusing time and insertion circuit location, are required. (3) If your design includes an inductive load such as a motor coil, incorporate a protection circuit into the design to prevent device malfunction or breakdown caused by the current resulting from the inrush current at power ON or the negative current resulting from the back electromotive force at power OFF. IC breakdown may cause injury, smoke or ignition. Use a stable power supply with ICs with built-in protection functions. If the power supply is unstable, the protection function may not operate, causing IC breakdown. IC breakdown may cause injury, smoke or ignition. (4) Do not insert devices in the wrong orientation or incorrectly. Make sure that the positive and negative terminals of power supplies are connected properly. Otherwise, the current or power consumption may exceed the absolute maximum rating, and exceeding the rating(s) may cause the device breakdown, damage or deterioration, and may result injury by explosion or combustion. In addition, do not use any device that is applied the current with inserting in the wrong orientation or incorrectly even just one time. (5) Carefully select external components (such as inputs and negative feedback capacitors) and load components (such as speakers), for example, power amp and regulator. If there is a large amount of leakage current such as input or negative feedback condenser, the IC output DC voltage will increase. If this output voltage is connected to a speaker with low input withstand voltage, overcurrent or IC failure can cause smoke or ignition. (The over current can cause smoke or ignition from the IC itself.) In particular, please pay attention when using a Bridge Tied Load (BTL) connection type IC that inputs output DC voltage to a speaker directly. 1

Points to Remember on Handling of ICs (1) Heat Radiation Design In using an IC with large current flow such as power amp, regulator or driver, please design the device so that heat is appropriately radiated, not to exceed the specified junction temperature (Tj) at any time and condition. These ICs generate heat even during normal use. An inadequate IC heat radiation design can lead to decrease in IC life, deterioration of IC characteristics or IC breakdown. In addition, please design the device taking into considerate the effect of IC heat radiation with peripheral components. (2) Back-EMF When a motor rotates in the reverse direction, stops or slows down abruptly, a current flow back to the motor s power supply due to the effect of back-emf. If the current sink capability of the power supply is small, the device s motor power supply and output pins might be exposed to conditions beyond absolute maximum ratings. To avoid this problem, take the effect of back-emf into consideration in system design. 11

About solderability, following conditions were confirmed Solderability (1) Use of Sn-37Pb solder Bath solder bath temperature = 23 C dipping time = 5 seconds the number of times = once use of R-type flux (2) Use of Sn-3.Ag-.5Cu solder Bath solder bath temperature = 245 C dipping time = 5 seconds the number of times = once use of R-type flux RESTRICTIONS ON PRODUCT USE 6116EBA The information contained herein is subject to change without notice. 2123_D TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability Handbook etc. 2123_A The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ( Unintended Usage ). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer s own risk. 2123_B The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. 616_Q The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. 2123_C The products described in this document are subject to the foreign exchange and foreign trade laws. 2123_E 12