UNISONIC TECHNOLOGIES CO., LTD P-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * R DS(ON) <24mΩ @V GS =-1V * R DS(ON) <36mΩ @V GS =4.5V * Low capacitance * Low gate charge * Fast switching capability * Avalanche energy specified SYMBOL Lead-free: L Halogen-free: G (7) (8) D1 (5) (6) D2 (2) G1 (4) G2 S1 (1) S2 (3) ORDERING INFORMATION Ordering Number Normal Lead Free Halogen Free Package Packing -S8-R L-S8-R G-S8-R SOP-8 Tape Reel -S8-T L-S8-T G-S8-T SOP-8 Tube 1 of 4 Copyright 8 Unisonic Technologies Co., Ltd
PIN CONFIGURATION UNISONIC TECHNOLOGIES CO., LTD 2 of 5
ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage V DSS -3 V Gate-Source Voltage V GSS ±2 V Continuous Drain Current I D -7.7 A Pulsed Drain Current (Note 2) I DM -3 A Power Dissipation T a =25 C P D 2 W Junction Temperature T J +15 C Storage Temperature T STG -55 ~ +15 C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width limited by T J(MAX) THERMAL DATA PARAMETER SYMBOL MIN TYP MAX UNIT Junction-to-Ambient θ JA 62.5 C/W ELECTRICAL CHARACTERISTICS (T J =25 C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS V GS =V, I D =-25µA -3 V Breakdown Voltage Temperature Coefficient ΔBV DSS /ΔT J Reference to 25 C, I D =-1mA -.2 V/ C Drain-Source Leakage Current I DSS V DS =-3V, V GS =V -1 µa Gate-Source Leakage Current I GSS V GS =±2V, V DS =V ±1 na ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) V DS =V GS, I DS =-25µA -1-3 V Static Drain-Source On-Resistance V GS =-1V, I D =-7A 2 24 R DS(ON) (Note) V GS =4.5V, I D =-5A 3 36 mω DYNAMIC PARAMETERS Input Capacitance C ISS 167 267 pf Reverse Transfer Capacitance C RSS 435 pf Output Capacitance C OSS V DS=-25V, V GS=V, f=1.mhz 53 pf SWITCHING PARAMETERS Turn-ON Delay Time (Note) t D(ON) 14 ns Turn-ON Rise Time t R V DS =-15V, I D =-1A, V GS =-1V 11 ns Turn-OFF Delay Time t D(OFF) R G =3.3Ω, R D =15Ω 38 ns Turn-OFF Fall-Time t F 25 ns Total Gate Charge (Note) Q G 27 45 nc Gate Source Charge Q GS V DS =-24V, V GS =-4.5V, I D =-7A 5 nc Gate Drain Charge Q GD 18 nc SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Diode Forward Voltage V SD I S =-1.7A, V GS =V -1.2 V Body Diode Reverse Recovery Time t RR 35 ns Body Diode Reverse Recovery I S =-7A, V GS =V, di/dt=1a/μs Q RR Charge 34 nc Note: Pulse width <3us, duty cycle <2%. UNISONIC TECHNOLOGIES CO., LTD 3 of 5
TYPICAL CHARACTERISTICS 3 25 15 1 5 Drain Current vs. Gate Threshold Voltage 45 4 35 3 25 15 1 5 Drain Current vs. Drain-Source Breakdown Voltage.5 1. 1.5 2. 1 2 3 4 Gate Threshold Voltage, V TH (V) Drain-Source Breakdown Voltage, BV DSS (V) 12 Drain-Source On-State Resistance Characteristics 1 8 6 V GS =-1V, I D =-7A 4 2 V GS =-5V, I D =-4.5A 5 1 15 Drain to Source Voltage, V DS (mv) UNISONIC TECHNOLOGIES CO., LTD 4 of 5
UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD 5 of 5