Table of Contents. Preface... xi

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Table of Contents Preface... xi Chapter 1. Power MOSFET Transistors... 1 Pierre ALOÏSI 1.1. Introduction... 1 1.2. Power MOSFET technologies... 5 1.2.1. Diffusion process... 5 1.2.2. Physical and structural MOS parameters... 7 1.2.3. Permanent sustaining current... 20 1.3. Mechanism of power MOSFET operation... 23 1.3.1. Basic principle... 23 1.3.2. Electron injection... 23 1.3.3. Static operation... 25 1.3.4. Dynamic operation... 30 1.4. Power MOSFET main characteristics... 34 1.5. Switching cycle with an inductive load... 36 1.5.1. Switch-on study... 36 1.5.2.Switch-off study... 38 1.6. Characteristic variations due to MOSFET temperature changes... 44 1.7. Over-constrained operations... 46 1.7.1. Overvoltage on the gate... 46 1.7.2. Over-current... 47 1.7.3. Avalanche sustaining... 49 1.7.4. Use of the body diode... 50 1.7.5. Safe operating areas... 51 1.8. Future developments of the power MOSFET... 53 1.9. References... 55

vi Power Electronics Semiconductor Devices Chapter 2. Insulated Gate Bipolar Transistors... 57 Pierre ALOÏSI 2.1. Introduction... 57 2.2. IGBT technology... 58 2.2.1. IGBT structure... 58 2.2.2. Voltage and current characteristics... 60 2.3. Operation technique... 63 2.3.1. Basic principle... 63 2.3.2. Continuous operation... 64 2.3.3. Dynamic operation... 71 2.4. Main IGBT characteristics... 74 2.5 One cycle of hard switching on the inductive load... 75 2.5.1. Switch-on study... 76 2.5.2. Switch-off study... 78 2.6 Soft switching study... 86 2.6.1. Soft switching switch-on: ZVS (Zero Voltage Switching)... 86 2.6.2. Soft switching switch-off: ZCS (Zero Current Switching)... 88 2.7. Temperature operation... 94 2.8. Over-constraint operations... 98 2.8.1. Overvoltage... 98 2.8.2. Over-current... 99 2.8.3. Manufacturer s specified safe operating areas... 113 2.9. Future of IGBT... 116 2.9.1. Silicon evolution... 116 2.9.2. Saturation voltage improvements... 117 2.10. IGBT and MOSFET drives and protections... 119 2.10.1. Gate drive design... 119 2.10.2. Gate drive circuits... 122 2.10.3. MOSFET and IGBT protections... 128 2.11. References... 130 Chapter 3. Series and Parallel Connections of MOS and IGBT... 133 Daniel CHATROUX, Dominique LAFORE and Jean-Luc SCHANEN 3.1. Introduction... 133 3.2. Kinds of associations... 134 3.2.1. Increase of power... 134 3.2.2. Increasing performance... 135 3.3. The study of associations: operation and parameter influence on imbalances in series and parallel... 135 3.3.1. Analysis and characteristics for the study of associations... 135 3.3.2. Static operation... 137

Table of Contents vii 3.3.3. Dynamic operation: commutation... 140 3.3.4. Transient operation... 149 3.3.5. Technological parameters that influence imbalances... 151 3.4. Solutions for design... 152 3.4.1. Parallel association... 152 3.4.2. Series associations... 161 3.4.3. Matrix connection of components... 179 3.5. References... 182 Chapter 4. Silicon Carbide Applications in Power Electronics... 185 Marie-Laure LOCATELLI and Dominique PLANSON 4.1. Introduction... 185 4.2. Physical properties of silicon carbide... 186 4.2.1. Structural features... 186 4.2.2. Chemical, mechanical and thermal features... 189 4.2.3. Electronic and thermal features... 188 4.2.4. Other candidates as semiconductors of power... 195 4.3. State of the art technology for silicon carbide power components.... 296 4.3.1. Substrates and thin layers of SiC... 296 4.3.2. Technological steps for achieving power components... 203 4.4. Applications of silicon carbide in power electronics.... 216 4.4.1. SiC components for high frequency power supplies... 216 4.4.2. SiC components for switching systems under high voltage and high power... 233 4.4.3. High energy SiC components for series protection systems... 249 4.5. Conclusion... 252 4.6. Acknowledgments... 255 4.7. References... 255 Chapter 5. Capacitors for Power Electronics... 267 Abderrahmane BÉROUAL, Sophie GUILLEMET-FRITSCH and Thierry LEBEY 5.1. Introduction... 267 5.2. The various components of the capacitor description... 268 5.2.1. The dielectric material... 269 5.2.2. The armatures... 269 5.2.3. Technology of capacitors... 270 5.2.4. Connections... 271 5.3. Stresses in a capacitor... 272 5.3.1. Stresses related to the voltage magnitude... 272 5.3.2. Losses and drift of capacity... 273 5.3.3. Thermal stresses... 274

viii Power Electronics Semiconductor Devices 5.3.4. Electromechanical stresses... 275 5.3.5. Electromagnetic constraints... 276 5.4. Film capacitors... 276 5.4.1. Armatures... 276 5.4.2. Dielectric materials... 279 5.5. Impregnated capacitors... 279 5.6. Electrolytic capacitors... 280 5.7. Modeling and use of capacitors... 282 5.7.1. Limitations of capacitors... 283 5.7.2. Application of capacitors... 290 5.8. Ceramic capacitors... 293 5.8.1. Definitions... 294 5.8.2. Methods of producing ceramics... 296 5.8.3. Technologies of ceramic capacitors... 299 5.8.4. The different types of components.... 302 5.8.5. Summary conclusion... 310 5.9. Specific applications of ceramic capacitors in power electronics... 311 5.9.1. Snubber circuits... 311 5.9.2. In ZVS... 312 5.9.3. Series resonant converters... 313 5.10. R&D perspectives on capacitors for power electronics... 313 5.10.1. Film capacitors... 313 5.10.2. Electrolytic capacitors... 314 5.10.3. Ceramic capacitors... 314 5.11. References... 315 Chapter 6. Modeling Connections... 317 Edith CLAVEL, François COSTA, Arnaud GUENA, Cyrille GAUTIER, James ROUDET and Jean-Luc SCHANEN 6.1. Introduction... 317 6.1.1. Importance of interconnections in power electronics... 317 6.1.2. The constraints imposed on the interconnections... 318 6.1.3. The various interconnections used in power electronics... 319 6.1.4. The need to model the interconnections... 320 6.2. The method of modeling... 321 6.2.1. The required qualities... 321 6.2.2. Which method of modeling?... 322 6.2.3. Brief description of the PEEC method... 324 6.3. The printed circuit board... 329 6.3.1. Introduction... 330 6.3.2. Thin wire method... 330

Table of Contents ix 6.3.3. Expressions of per unit length parameters... 332 6.3.4. Representation by multi-poles, circuit modeling... 340 6.3.5. Topological analysis of printed circuit... 346 6.3.6. Experimental applications... 349 6.3.7. Conclusion on the simulation of printed circuit... 353 6.4. Towards a better understanding of massive interconnections... 353 6.4.1. General considerations... 353 6.4.2 The printed circuit board or the isolated metal substrate (IMS)... 359 6.4.3. Massive conductors... 361 6.4.4. Bus bars... 361 6.5. Experimental validations... 362 6.6. Using these models... 366 6.6.1. Determination of equivalent impedance... 366 6.6.2. Other applications: towards thermal analysis and electrodynamic efforts computation... 390 6.7. Conclusion... 399 6.8. References... 400 Chapter 7. Commutation Cell.... 403 James ROUDET and Jean-Luc SCHANEN 7.1. Introduction: a well-defined commutation cell... 403 7.2. Some more or less coupled physical phenomena... 404 7.3. The players in switching (respective roles of the component and its environment)... 410 7.3.1. Closure of the MOSFET... 411 7.3.2. Opening of the MOSFET... 424 7.3.3. Summary... 431 7.4. References... 432 Chapter 8. Power Electronics and Thermal Management... 433 Corinne PERRET and Robert PERRET 8.1. Introduction: the need for efficient cooling of electronic modules... 433 8.2. Current power components... 436 8.2.1. Silicon chip: the active component... 436 8.2.2. Distribution of losses in the silicon chip... 442 8.3. Power electronic modules... 442 8.3.1. Main features of the power electronic modules... 442 8.3.2. The main heat equations in the module... 444 8.3.3. Cooling currently used for components of power electronics... 446 8.3.4. Towards an all silicon approach... 448 8.3.5. Conclusion... 451

x Power Electronics Semiconductor Devices 8.4. Laws of thermal and fluid exchange for forced convection with single phase operation... 452 8.4.1. Notion of thermal resistance... 452 8.4.2. Laws of convective exchanges from a thermal and hydraulic point of view: the four numbers of fluids physics... 456 8.5. Modeling heat exchanges... 461 8.5.1. Semi-analytical approach... 461 8.5.2. The numerical models... 472 8.5.3. Taking into account electro-thermal coupling... 478 8.6. Experimental validation and results... 486 8.6.1. Infrared thermography... 486 8.6.2. Indirect measurement of temperature from a thermo-sensible parameter... 490 8.7. Conclusion... 493 8.8. References... 494 Chapter 9. Towards Integrated Power Electronics... 497 Patrick AUSTIN, Marie BREIL and Jean-Louis SANCHEZ 9.1. The integration... 497 9.1.1. Introduction... 497 9.1.2. The different types of monolithic integration... 499 9.2. Examples and development of functional integration... 507 9.2.1. The MOS thyristor structures... 507 9.2.2. Evolution towards the integration of specific functions... 514 9.3. Integration of functions within the power component... 520 9.3.1. Monolithic integration of electrical functions... 520 9.3.2. Extensions of integration... 530 9.4. Design method and technologies... 535 9.4.1 Evolution of methods and design tools for functional integration.. 535 9.4.2. The technologies... 537 9.5. Conclusion... 541 9.6. References... 542 List of Authors... 547 Index... 551

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