GTM323 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GTM323 Voltage Resonance Inverter Switching Application Unit: mm Enhancement-mode High speed : tf =.9 µs (typ.) (IC = A) Low saturation voltage : VCE (sat) = 2.3 V (typ.) (IC = A) FRD included between and collector TO-3P(LH) (Toshiba package name) Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector- voltage V CES 9 V Gate- voltage V GES ±25 V Continuous collector current @ Tc = C I C 3 @ Pulsed collector current I CP 2 A Diode forward current Collector power dissipation DC I F 5 Pulsed I FP 2 @ Tc = C P C 8 @ 2 Junction temperature T j 5 C Storage temperature range T stg 55 to 5 C A A W JEDEC JEITA TOSHIBA 2-2F2C Weight: 9.75 g (typ.) Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance (IGBT) R th (j-c).25 C/W Thermal resistance (diode) R th (j-c) 4. C/W Equivalent Circuit Collector Gate Emitter 23-7-5
GTM323 Electrical Characteristics (Ta = 25 C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current I GES V GE = ±25 V, V CE = ±5 na Collector cut-off current I CES V CE = 9 V, V GE =. ma Gate- cut-off voltage V GE (OFF) I C = ma, V CE = 5 V 4. 7. V Collector- saturation voltage V CE (sat) I C = A, V GE = 5 V 2.3 2.8 V Input capacitance C ies V CE = V, V GE =, f = MHz 42 pf Rise time t r Resistive Load.25 Switching time Turn-on time t on V CC = V, I C = A.37 Fall time t f V GG = ±5 V, R G = 5 Ω.9.2 µs Turn-off time t off (Note ).4 Diode forward voltage V F I F = 5 A, V GE =..9 V Reverse recovery time t rr I F = A, di/dt = 2 A/µs.4 3. µs Note : Switching time measurement circuit and input/output waveforms R G R L V GE 9% % V CC I C 9% 9% V CE t d (off) % % t f t r t off t on 2 23-7-5
GTM323 2 Tc = -4 C I C V CE 5 9 8 2 I C V CE 5 9 8 4 VGE = 2 V 7 8 4 VGE = 2 V 8 7 2 2 2 3 4 5 2 3 4 5 Collector- voltage VCE (V) Collector- voltage VCE (V) 2 8 4 2 Tc = 25 C I C V CE VGE = 2 V 5 9 8 7 8 4 2 VCE = 5V I C V GE Tc = 25 C 4 25 2 3 4 5 2 4 8 Collector- voltage VCE (V) Gate- voltage VGE (V) V CE (sat) Tc Collector- saturation voltage VCE (sat) (V) 4 VGE = 5 V 3 2 8 3 IC = A 2 2 4 Case temperature Tc ( C) 3 23-7-5
GTM323 Collector- voltage VCE (V) Switching time (µs) 2 5 5 RL = 2.5 Ω VCE = 5 V 5 V CE, V GE Q G 2 8 24 VCC = V IC = A VGG = ±5 V. ton toff tr tf Gate charge QG (nc) Switching Time R G 2 5 5 Gate- voltage VGE (V) Switching time (µs) Capacitance C (pf) C V CE Cies Coes Cres VCC = V RG = 5 Ω VGG = ±5 V. toff ton tf tr Collector- voltage VCE (V) Switching Time I C VGE = f = MHz.. 2 3 4 5 7 Gate resistance RG (Ω) IC max (pulsed)* IC max (continuous) DC operation Safe Operating Area ms* µs* * Single non-repetitive pulse curves must be derated linearly with increase in temperature. µs* Reverse Bias SOA Tj < = 25 C VGG = 2 V RG = Ω ms * Collector- voltage VCE (V) Collector- voltage VCE (V) 4 23-7-5
GTM323 Maximum DC collector current ICmax (A) I C max Tc 7 VGE = 5 V 5 4 3 2 25 5 75 25 5 Transient thermal impedance Rth (t) ( C/W) 2 R th (t) t w Diode stage IGBT stage 2 5 4 3 2 2 Case temperature Tc ( C) Pulse width tw (s) Forward current IF (A) I F V F collector 8 4 Tc = 25 C 2 25 4.4.8.2. 2. 2.4 Reverse recovery time trr (µs). Collector di/dt = 2 A/µs.4.2. t rr, I rr I F.8 2 4 8 trr Irr 8 4 2 Peak reverse recovery current Irr (A) Forward voltage VF (V) Forward current IF (A) t rr, I rr di/dt Reverse recovery time trr (µs)..2.8.4 trr Irr collector IF = A 8 4 2 Peak reverse recovery current Irr (A). 4 8 2 8 di/dt (A/µs) 5 23-7-5
GTM323 RESTRICTIONS ON PRODUCT USE The information contained herein is subject to change without notice. 39EAA The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability Handbook etc.. The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ( Unintended Usage ). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer s own risk. TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 23-7-5