STGP7NB60KD - STGB7NB60KD STGP7NB60KDFP N-CHANNEL 7A - 600V - TO-220/TO-220FP/D 2 PAK SHORT CIRCUIT RATED PowerMESH IGBT

Similar documents
STGP10NB60SD. N-CHANNEL 10A - 600V - TO-220 Low Drop PowerMESH IGBT. General features. Description. Internal schematic diagram.

Obsolete Product(s) - Obsolete Product(s)


STGB14NC60K STGD14NC60K

STGE200NB60S. N-channel 150A - 600V - ISOTOP Low drop PowerMESH IGBT. General features. Description. Internal schematic diagram.

STP80NF10 STB80NF10 N-CHANNEL 100V Ω - 80A - TO-220/D 2 PAK LOW GATE CHARGE STripFET II MOSFET

STB55NF06 STB55NF06-1 STP55NF06 STP55NF06FP

STD7NS20 STD7NS20-1 N-CHANNEL 200V Ω - 7A DPAK / IPAK MESH OVERLAY MOSFET

STP55NF03L STB55NF03L STB55NF03L-1 N-CHANNEL 30V Ω - 55A TO-220/D 2 PAK/I 2 PAK STripFET II POWER MOSFET

STD12NF06L N-CHANNEL 60V Ω - 12A IPAK/DPAK STripFET II POWER MOSFET

STGB30NC60K STGP30NC60K 30 A V - short circuit rugged IGBT Features Applications Description

STD5NM50 STD5NM50-1 N-CHANNEL 500V - 0.7Ω - 7.5A DPAK/IPAK MDmesh Power MOSFET

STD10NF10 N-CHANNEL 100V Ω - 13A IPAK/DPAK LOW GATE CHARGE STripFET II POWER MOSFET

STP21NM50N-STF21NM50N-STW21NM50N STB21NM50N - STB21NM50N-1

STF12PF06 P-CHANNEL 60V Ω - 12A TO-220/TO-220FP STripFET II POWER MOSFET

Sales Type Marking Package Packaging STG3P3M25N60 G3P3M25N60 SEMITOP 3 SEMIBOX. May 2006 Rev1 1/12

Obsolete Product(s) - Obsolete Product(s)

Obsolete Product(s) - Obsolete Product(s)

STGB8NC60KD - STGD8NC60KD STGF8NC60KD - STGP8NC60KD

STGD5NB120SZ. 5 A V - low drop internally clamped IGBT. Features. Applications. Description

STGW30NC60KD. 30 A V - short circuit rugged IGBT. Features. Applications. Description

-55 to 175 C T j ( ) Pulse width limited by safe operating area.

Obsolete Product(s) - Obsolete Product(s)

STD20NF06L N-CHANNEL 60V Ω - 24A DPAK/IPAK STripFET II POWER MOSFET

Obsolete Product(s) - Obsolete Product(s)

STP3NB90 STP3NB90FP N-CHANNEL 900V - 4 Ω A TO-220/TO-220FP PowerMesh MOSFET

Obsolete Product(s) - Obsolete Product(s) STGB19NC60K STGP19NC60K 20 A V - short circuit rugged IGBT Features Applications

STP9NK50Z - STP9NK50ZFP STB9NK50Z - STB9NK50Z-1 N-CHANNEL 500V Ω - 7.2A TO-220/FP/D 2 PAK/I 2 PAK Zener-Protected SuperMESH MOSFET

STS7PF30L P-CHANNEL 30V Ω - 7A - SO-8 STripFET II Power MOSFET General features Description Internal schematic diagram

STP36NF06 STP36NF06FP

STB5NK50Z/-1 - STD5NK50Z/-1 STP5NK50Z - STP5NK50ZFP N-CHANNEL 500V Ω - 4.4A TO-220/FP-D/IPAK-D 2 /I 2 PAK Zener-Protected SuperMESH MOSFET

STB30NF10 STP30NF10 - STP30NF10FP

IRFP460 N-CHANNEL 500V Ω A TO-247 PowerMesh II MOSFET

STS7PF30L P-CHANNEL 30V Ω - 7ASO-8 STripFET II POWER MOSFET

Obsolete Product(s) - Obsolete Product(s)

STGW30NC60WD. N-CHANNEL 30A - 600V - TO-247 Ultra FAST Switching PowerMESH IGBT. General features. Description. Internal schematic diagram

STGW39NC60VD. 40 A V - very fast IGBT. Features. Applications. Description

STD1NK60 - STD1NK60-1 STQ1HNK60R - STN1HNK60 N-CHANNEL 600V - 8Ω - 1A DPAK/TO-92/IPAK/SOT-223 SuperMESH MOSFET

STY60NM50 N-CHANNEL 500V Ω - 60A Max247 Zener-Protected MDmesh Power MOSFET

Obsolete Product(s) - Obsolete Product(s)

Obsolete Product(s) - Obsolete Product(s)

115 W 115 W 35 W 115 W 35 W 156 W TO-220 SALES TYPE MARKING PACKAGE PACKAGING STP10NK60Z P10NK60Z TO-220 TUBE STP10NK60ZFP P10NK60ZFP TO-220FP TUBE

STB160N75F3 STP160N75F3 - STW160N75F3

STGBL6NC60D STGPL6NC60D

STF8NK100Z STP8NK100Z

STGB20NC60V, STGP20NC60V, STGW20NC60V

STW20NB50. N - CHANNEL 500V Ω - 20A - TO-247 PowerMESH MOSFET

N - CHANNEL 800V - 3Ω - 4A - TO-220/TO-220FP PowerMESH MOSFET 4 A 4 A. Symbol Parameter Value Unit

STP36NF06 STP36NF06FP

STP5NK80Z - STP5NK80ZFP N-CHANNEL 800V - 1.9Ω - 4.3A TO-220/TO-220FP Zener-Protected SuperMESH Power MOSFET

STW9NC80Z N-CHANNEL 800V Ω - 9.4A TO-247 Zener-Protected PowerMESH III MOSFET

STP7NK80Z - STP7NK80ZFP STB7NK80Z - STB7NK80Z-1 N-CHANNEL800V-1.5Ω - 5.2A TO-220/TO-220FP/I 2 PAK/D 2 PAK Zener-Protected SuperMESH Power MOSFET

STP80NF10FP. N-channel 100V Ω - 38A - TO-220FP Low gate charge STripFET II Power MOSFET. General features. Description

STP10NK60Z/FP, STB10NK60Z/-1 STW10NK60Z N-CHANNEL 600V-0.65Ω-10A TO-220/FP/D 2 PAK/I 2 PAK/TO-247 Zener-Protected SuperMESH Power MOSFET

STD16NF06. N-Channel 60V Ω - 16A - DPAK STripFET II Power MOSFET. General features. Description. Internal schematic diagram.

STB16NF06L. N-channel 60V Ω - 16A - D 2 PAK STripFET Power MOSFET. General features. Description. Internal schematic diagram.

STD17NF03L N-CHANNEL 30V Ω - 17A - DPAK/IPAK STripFET POWER MOSFET

IRF540 N-CHANNEL 100V Ω - 22A TO-220 LOW GATE CHARGE STripFET II POWER MOSFET

STGB7NC60HD, STGF7NC60HD, STGP7NC60HD

STGW30N120KD STGWA30N120KD

115 W 35 W 115 W 115 W 156 W SALES TYPE MARKING PACKAGE PACKAGING STP9NK70Z P9NK70Z TO-220 TUBE STP9NK70ZFP P9NK70ZFP TO-220FP TUBE

Obsolete Product(s) - Obsolete Product(s)

STP36NF06L STB36NF06L

STGW30NC60WD. 30 A, 600 V ultra fast IGBT. Features. Applications. Description

STB160N75F3 STP160N75F3 - STW160N75F3

STD1LNK60Z-1 STQ1NK60ZR - STN1NK60Z N-CHANNEL 600V 13Ω 0.8A TO-92/IPAK/SOT-223 Zener-Protected SuperMESH MOSFET

Obsolete Product(s) - Obsolete Product(s)

STB80NF55-08T4 STP80NF55-08, STW80NF55-08

STS7NF60L N-CHANNEL 60V Ω - 7.5A SO-8 STripFET II POWER MOSFET

MJD122-1 / MJD122T4 MJD127-1 / MJD127T4 COMPLEMENTARY POWER DARLINGTON TRANSISTORS

2N2219A 2N2222A HIGH SPEED SWITCHES

Obsolete Product(s) - Obsolete Product(s)

STW9NB80. N-CHANNEL 800V Ω - 9.3A - TO-247 PowerMESH MOSFET

STS5PF30L P-CHANNEL 30V Ω - 5A SO-8 STRIPFET POWER MOSFET

STW26NM60 N-CHANNEL 600V Ω - 30A TO-247 MDmesh MOSFET

STY60NK30Z N-CHANNEL 300V Ω - 60A Max247 Zener-Protected SuperMESH Power MOSFET

STD30NF03L STD30NF03L-1

STGB19NC60HDT4, STGF19NC60HD, STGP19NC60HD, STGW19NC60HD

Obsolete Product(s) - Obsolete Product(s)

STP10NK70ZFP STP10NK70Z

STE70NM60 N-CHANNEL 600V Ω - 70A ISOTOP Zener-Protected MDmesh Power MOSFET

Obsolete Product(s) - Obsolete Product(s)

STGW38IH130D, STGWT38IH130D

IRF830. N - CHANNEL 500V Ω - 4.5A - TO-220 PowerMESH MOSFET

STN2NF10. N-channel 100V Ω - 2.4A - SOT-223 STripFET II Power MOSFET. Features. Description. Application. Internal schematic diagram.

STP14NF10. N-channel 100 V Ω - 15 A - TO-220 low gate charge STripFET II Power MOSFET. Features. Application. Description

STW6NC90Z N-CHANNEL 900V - 2.1Ω - 5.2A TO-247 Zener-Protected PowerMESH III MOSFET

Obsolete Product(s) - Obsolete Product(s)

Features. Description. Table 1. Device summary. Order code Marking Package Packaging. STGW60V60F GW60V60F TO-247 Tube

STGW60V60DF STGWT60V60DF

Obsolete Product(s) - Obsolete Product(s)

STW8NC90Z N-CHANNEL 900V Ω - 7.6A TO-247 Zener-Protected PowerMESH III MOSFET

STF40NF03L STP40NF03L

STB21NK50Z. N-channel 500 V, 0.23 Ω, 17 A, D 2 PAK Zener-protected supermesh Power MOSFET. Features. Applications. Description

ESM3030DV NPN DARLINGTON POWER MODULE

IRF740. N-channel 400V Ω - 10A TO-220 PowerMESH II Power MOSFET. General features. Description. Internal schematic diagram.

Order codes Marking Package Packaging. STGB19NC60HT4 GB19NC60H D²PAK Tape and reel STGP19NC60H GP19NC60H TO-220 Tube STGW19NC60H GW19NC60H TO-247 Tube

IRFP460. N - CHANNEL 500V Ω - 20 A - TO-247 PowerMESH MOSFET

STB11NK50Z - STP11NK50ZFP STP11NK50Z

Obsolete Product(s) - Obsolete Product(s)

Transcription:

STGP7NB60KD - STGB7NB60KD STGP7NB60KDFP N-CHANNEL 7A - 600V - TO-220/TO-220FP/D 2 PAK SHORT CIRCUIT RATED PowerMESH IGBT TYPE V CES V CE(sat) I C STGP7NB60KD STGP7NB60KDFP STGB7NB60KD 600 V 600 V 600 V <2.8 V <2.8 V <2.8V 7A 7A 7A HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (V cesat ) LOW GATE CHARGE HIGH CURRENT CAPABILITY OFF LOSSES INCLUDE TAIL CURRENT HIGH FREQUENCY OPERATION SHORT CIRCUIT RATED CO-PACKAGED WITH TURBOSWITCH ANTIPARALLEL DIODE 1 2 3 1 2 3 TO-220 TO-220FP 1 D²PAK 3 INTERNAL SCHEMATIC DIAGRAM DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the Power- MESH IGBTs, with outstanding performances. The suffix K identifies a family optimized for high frequency motor control applications with short circuit withstand capability. APPLICATIONS HIGH FREQUENCY MOTOR CONTROLS SMPS AND PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES ORDER CODES PART NUMBER MARKING PACKAGE PACKAGING STGP7NB60KD GP7NB60KD TO-220 TUBE STGB7NB60KDT4 GB7NB60KD D 2 PAK TAPE & REEL STGP7NB60KDFP GP7NB60KDFP TO-220FP TUBE May 2004 1/12

ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit STGP7NB60KD STGB7NB60KD STGP7NB60KDFP V CES Collector-Emitter Voltage (V GS =0) 600 V V ECR Emitter-Collector Voltage 20 V V GE Gate-Emitter Voltage ±20 V I C Collector Current (continuous) at T C =25 C 14 A I C Collector Current (continuous) at T C =100 C 7 A I CM ( ) Collector Current (pulsed) 56 A P TOT Total Dissipation at T C =25 C 80 25 W Derating Factor 0.64 0.20 W/ C V ISO Insulation Withstand Voltage A.C.(t= 1 sec; Tc= 25 C) -- 2500 V T stg Storage Temperature 55 to 150 C T j Max. Operating Junction Temperature 150 C ( ) Pulse width limited by safe operating area THERMAL DATA TO-220 D 2 PAK TO-220FP Rthj-case Thermal Resistance Junction-case Max 1.56 5 C/W Rthj-amb Thermal Resistance Junction-ambient Max 62.5 C/W ELECTRICAL CHARACTERISTICS (T CASE =25 C UNLESS OTHERWISE SPECIFIED) OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit V BR(CES) Collector-Emitter Breakdown I C = 250 µa, V GE = 0 600 V Voltage I CES Collector cut-off V CE = Max Rating, T C =25 C 50 µa (V GE =0) V CE = Max Rating, T C =125 C 500 µa I GES Gate-Emitter Leakage Current (V CE =0) V GE = ±20V, V CE = 0 ±100 na ON (1) Symbol Parameter Test Conditions Min. Typ. Max. Unit V GE(th) Gate Threshold Voltage V CE =V GE,I C = 250µA 5 7 V V CE(sat) Collector-Emitter Saturation V GE = 15V, I C =7A 2.3 2.8 V Voltage V GE = 15V, I C = 7 A, Tj= 125 C 1.9 V 2/12

ELECTRICAL CHARACTERISTICS (CONTINUED) DYNAMIC Symbol Parameter Test Conditions Min. Typ. Max. Unit g fs Forward Transconductance V CE =15V, I C =7 A 3.7 S C ies C oes C res Q g Q ge Q gc SWITCHING ON Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Emitter Charge Gate-Collector Charge V CE =25V,f=1MHz,V GE = 0 495 77 13 V CE = 480V, I C =7A, V GE =15V tscw Short Circuit Withstand Time V ce =0.5V BR(CES),V GE =15V Tj= 125 C,R G =10Ω 32.7 5.9 18.3 pf pf pf 45 nc nc nc 10 µs Symbol Parameter Test Conditions Min. Typ. Max. Unit t d(on) Turn-on Delay Time V CC =480V,I C =7A 15 ns t r Rise Time R G =10Ω, V GE =15V 6 ns (di/dt) on Eon Turn-on Current Slope Turn-on Switching Losses V CC =480V,I C =7A,R G =10Ω V GE = 15 V,Tj = 125 C 980 95 A/µs µj SWITCHING OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit t c Cross-over Time V cc =480V,I C =7A, 105 ns t r (V off ) Off Voltage Rise Time R GE =10Ω,V GE =15V 30 ns t d ( off ) Delay Time 50 ns t f Fall Time 100 ns E off (**) Turn-off Switching Loss 140 µj E ts Total Switching Loss 200 µj t c Cross-over Time V cc =480V,I C =7A, 227 ns t r (V off ) Off Voltage Rise Time R GE =10Ω,V GE =15V Tj = 125 C 68 ns t d ( off ) Delay Time 52 ns t f Fall Time 150 ns E off (**) Turn-off Switching Loss 300 µj E ts Total Switching Loss 395 µj (**) Losses include Also the Tail (Jedec Standardization) COLLECTOR-EMITTER DIODE Symbol Parameter Test Conditions Min. Typ. Max. Unit I f I fm Forward Current Forward Current pulsed V f Forward On-Voltage I f =3.5A I f =3.5A,Tj=125 C t rr Q rr I rrm Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by max. junction temperature. (**)Losses include Also the Tail (Jedec Standardization) I f =7A,V R =35V, Tj =125 C, di/dt = 100 A/µs 1.4 1.2 50 70 2.7 7 56 A A 1.9 V V ns nc A 3/12

Output Characteristics Transfer Characteristics Transconductance Normalized Collector-Emitter On Voltage Collector-Emitter On Voltage vs Collector Current Gate Threshold vs Temperature 4/12

Normalized Breakdown Voltage vs Temperature Capacitance Variations Gate Charge vs Gate-Emitter Voltage Total Switching Losses vs Gate Resistance Total Switching Losses vs Temperature Total Switching Losses vs Collector Current 5/12

Thermal Impedance for TO-220/D 2 PAK Thermal Impedance for TO-220FP Turn-Off SOA 6/12

Fig. 1: Gate Charge test Circuit Fig. 2: Test Circuit For Inductive Load Switching 7/12

TO-220 MECHANICAL DATA DIM. mm. inch MIN. TYP MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 L 13 14 0.511 0.551 L1 3.50 3.93 0.137 0.154 L20 16.40 0.645 L30 28.90 1.137 øp 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 8/12

TO-220FP MECHANICAL DATA DIM. mm. inch MIN. TYP MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 L3 28.6 30.6 1.126 1.204 L4 9.8 10.6.0385 0.417 L5 2.9 3.6 0.114 0.141 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 H G B D A E L6 L7 L3 G1 F1 F L2 L5 F2 L4 1 2 3 9/12

3 STGP7NB60KD - STGP7NB60KDFP - STGB7NB60KD D 2 PAK MECHANICAL DATA DIM. mm. inch MIN. TYP MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 D1 8 0.315 E 10 10.4 0.393 E1 8.5 0.334 G 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.625 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 M 2.4 3.2 0.094 0.126 R 0.4 0.015 V2 0º 8º 10/12 1

D 2 PAK FOOTPRINT TUBE SHIPMENT (no suffix)* TAPE AND REEL SHIPMENT (suffix T4 )* REEL MECHANICAL DATA DIM. mm inch MIN. MAX. MIN. MAX. A 330 12.992 B 1.5 0.059 C 12.8 13.2 0.504 0.520 D 20.2 0795 G 24.4 26.4 0.960 1.039 N 100 3.937 T 30.4 1.197 TAPE MECHANICAL DATA DIM. mm inch MIN. MAX. MIN. MAX. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 R 50 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 0.933 0.956 * on sales type BASE QTY BULK QTY 1000 1000 11/12

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners 2004 STMicroelectronics - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 12/12