U-LD83C061A-Ep Features 1. Peak wavelength at 25 o C:830 nm (typical) 2. Standard light output:300mw (CW)

Similar documents
U-LD-80B051A-C Features 1. Peak wavelength at 25 o C:808 nm (typical) 2. Standard light output:200mw (CW)

UNION OPTRONICS CORP.

U-LD-85E061Ap Features 1. Peak wavelength at 25 o C : 850 nm (typical) 2. Standard light output : 500mW (CW)

UNION OPTRONICS CORP.

U-LD Ap/62Ap Features 1. Peak wavelength at 25 o C:830 nm (typical) 2. Standard light output : 50mW (CW) 3. Type:

UNION OPTRONICS CORP.

UNION OPTRONICS CORP.

UNION OPTRONICS CORP.

UNION OPTRONICS CORP.

U-LD-98C041Ap Features 1. Peak wavelength at 25 o C:980 nm (typical) 2. Standard light output:300mw (CW)

UNION OPTRONICS CORP.

U-LD A Features 1. Peak wavelength at 25 o C:635 nm (typical) 2. Standard light output:5mw (CW)

U-LD-98B043Ap Features 1. Peak wavelength at 25 o C:980 nm (typical) 2. Standard light output:200mw (CW)

UNION OPTRONICS CORP.

U-SMD-65xx SERIES 5630 LASER DIODE

635nm Red Laser Diode. U-LD A-preliminary. U-LD A-preliminary

808nm IR Laser Diode. U-LD-80E041A-preliminary 友嘉科技股份有限公司桃園縣楊梅鎮 3 鄰高獅路 156 號. U-LD-80E041A-preliminary

650nm Laser Diode for DVD U-LD B

670nm Red Laser Diode. U-LD A-preliminary 友嘉科技股份有限公司桃園縣楊梅鎮 3 鄰高獅路 156 號. U-LD A-preliminary

GH04020B2A. Blue violet Laser Diode. Low Power Blue violet Laser Diode. Under development New product. Outline Dimensions.

LNCT22PK01WW. Description. Package. Feature. Pin assignment. Application Optical disk drive Sensing Industrial use. Absolute Maximum Ratings 3)

HL6535MG. Visible High Power Laser Diode for Recordable-DVD

HL6714G. AlGaInP Laser Diode ODE C (Z) Rev.3 Jan Description. Features

Operating voltage Vop V Wavelength λ nm

GH04125A2A. Blue violet Laser Diode. High Power Blue violet Laser Diode. Under development New product. Outline Dimensions.

HL8325G. GaAlAs Laser Diode

LD Item Symbol Value Unit Condition 100 mw CW Output power

Package Type HL6362MG/63MG: MG

Operating voltage Vop V Wavelength λ nm

Operating voltage Vop V Wavelength λ nm

Item Symbol Min. Typ. Max. Unit Condition. Threshold current Ith ma. Operating current Iop ma

LNCQ28PS01WW. Description. Package. Features. Pin assignment. Applications. Absolute Maximum Ratings. Electrical and Optical Characteristics

Laser diode. CW (Continuous Wave) drive At the position of 1.6mm or more from the lead base (3s)

HL6323MG. AlGaInP Laser Diode

HL6312G/13G. AlGaInP Laser Diodes

HL6335G/36G. Circular Beam Low Operating Current. Description. Features. Absolute Maximum Ratings. Optical and Electrical Characteristics

2014 USHIO OPTO SEMICONDUCTORS, INC. UOS-GC001

HL6312G/13G. AlGaInP Laser Diodes

VCSEL SENSOR FLAT WINDOW TO CAN

SPECIFICATIONS. Laser Diode GH0832BA1K

L Epoxy Lens Type Infrared Illuminator

DL Blue Laser Diode in TO38 ICut Package. PRELIMINARY Datasheet. Creative Technology Lasers (925) Tele.

Blue Laser Diode in TO38 ICut Package, 80mW CW DL PRELIMINARY

CALY LC nm 10 Gbps DFB LC TOSA with Flex

Opto Devices Laser Diodes

SMT430R High Performance TOP LED

SMT880 High Performance Infrared TOP IR LED

NEC's 1310 nm InGaAsP MQW-DFB LASER DIODE IN COAXIAL PACKAGE FOR FIBER OPTIC COMMUNICATIONS

940nm Single-Mode VCSEL Part number code: 940S-0000-X001

Green Laser Diode in TO56 Package Version 0.2 PLT5 520B. ATTENTION Observe Precautions For Handling Electrostatic Sensitive Device

1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, FTTH InGaAsP MQW-FP LASER DIODE

850nm Multi-Mode VCSEL

680nm Quasi Single-Mode VCSEL Part number code: 680Q-0000-X002

EDC High Power Top LED

830nm single mode diode laser

NEC's 1550 nm InGaAsP MQW DFB LASER DIODE IN COAXIAL PACKAGE for 622 Mb/s APPLICATION

Diode Lasers, Single- Mode 50 to 200 mw, 830/852 nm. 54xx Series

940nm Single-Mode VCSEL Part number code: 940S-0000-X001

EDC800D-1100-S5. Data Sheet. 800nm High Power TOP LED. Outline and Internal Circuit PRELIMINARY. (Unit : mm)

2.5GBPS 850NM VCSEL LC TOSA PACKAGE

F6 Series Diode Lasers 6-Pin Fiber-Coupled Single-Stripe CW Devices

Green Laser Diode in TO38 ICut Package Version 1.1 PL 520. ATTENTION Observe Precautions For Handling Electrostatic Sensitive Device

EDC S5. Data Sheet. 1050nm High Power TOP LED. Outline and Internal Circuit. (Unit : mm)

SMBB850D AnodeMark heatsink

850NM SINGLE MODE VCSEL TO-46 PACKAGE

NV4V31SF. Data Sheet R08DS0070EJ0100 Rev Blue-Violet Laser Diode 405 nm Blue-Violet Laser Light Source DESCRIPTION FEATURES APPLICATIONS

SMT47W/850D High Performance Bi-Color TOP LED

SMD BT/BDGAR6S1-L40/10T

IRR60-48C/TR8. Description. Applications Sensor Oximeter. Device Selection Guide Device No. Chip Material Lens Color IRR60-48C/TR8

High Power Multimode Laser Diodes 6W Output Power in CW Operation with Wavelengths from 1470nm to 1550nm

Green Laser Diode in TO38 ICut Package Version 0.2

A laser diode is mounted into a coaxial package integrated with a singe-mode fiber-stub, an isolator and an InGaAs monitor PD.

SMT660N/805/ High Performance Multi-Color TOP LED

L6990/750/800/850-40B59 Multi-Wavelength LED

10G GPON ONU BOSA(2.5G1270nmTX 10G1577nmRX) Features: Applications: Absolute Maximum Ratings: Coaxial Package. InGaAsP/InP MQW-DFB Laser Diode

High Powered 860nm VCSELs HVS

SMD REFLECTOR /RSGHB2W-S01/2D/MS

1310nm FP TX/1550nm RX PD 1.5GHz CATV Transmission. HERPD31xx510MSAxx. Features: Applications: Absolute Maximum Ratings: Coaxial Package

SMT430R. Data Sheet. 430nm High Performance TOP LED. Outline and Internal Circuit PRELIMINARY. (Unit : mm)

SMD B/BDR6GAS1-R40/10T

Opto-Device & Custom LED 5 STEM TYPE LED LAMP L660N-30K42N

10G GPON ONU BOSA(10G1270nmTX 10G1577nmRX) Features: Applications: Absolute Maximum Ratings: Electrical and Optical Characteristics Transmitter:

SMD REFLECTOR 67-03A/R6GHBHW-A01/2T/MS

Part No. Connector Type Pin Type LD Type Power Data Rate

Opto-Device & Custom LED 5 Stem Type LED LAMP L M32

The OPV300 / OPV310 have a flat lens while the OPV314 has a microbead lens. Refer to mechanical drawings for details.

SMBB850DS Data Sheet. 850nm High Power TOP LED. Outline and Internal Circuit. (Unit : mm)

EDC810D-1100-S5. High Power Top LED

GPON OLT BOSA (1490nmTX DFB 1.25G/1310nmRX PIN-TIA 1.25G)

EVERLIGHT ELECTRONICS CO., LTD

Technical Data Sheet 0603 Package Chip LED (0.6mm Height)

CWDM Coaxial DFB-LD Module for CATV Return-path

EVERLIGHT ELECTRONICS CO.,LTD.

EVERLIGHT ELECTRONICS CO.,LTD.

version *Note1 ) Pin Type

15T/13 Receptacle BIDI-FP

Technical Data Sheet 0603 Package Infrared Chip LED SIR19-315/TR8

EVERLIGHT ELECTRONICS CO., LTD

Parameter Symbol Ratings Unit

DISCONTINUED. LASER DIODE NX8570 Series nm CW LIGHT SOURCE InGaAsP MQW-DFB LASER DIODE MODULE WITH WAVELENGTH MONITOR DESCRIPTION FEATURES

Transcription:

U-LD83C061A-Ep Features 1. Peak wavelength at 25 o C:830 nm (typical) 2. Standard light output:300mw (CW) 3. Package Type:TO-18 (ψ5.6mm) cap with flat window-glass by Pb free, with monitor PD. 4. Small perpendicular divergence angle 5. Lateral single mode lasing Applications 1. Motion sensor 2. 3D depth sensor 3. Illumination 4. Industry 5. Medical application External dimensions(unit : mm) No.156, Gaoshih Rd., Yangmei Township, Taoyuan County 326, Taiwan (R.O.C.) TEL: 886-3-485-2687 FAX : 886-3-475-4378 E-mail: sales@uocnet.com Website:http://www.uocnet.com 1 / 5

Absolute Maximum Ratings(Tc=25 ) Parameter Symbol Rating Unit Optical Output Po 300 mw Reverse Voltage Vr 2 V Operating Temperature(Case) Top -10~+60 Storage Temperature Tstg -40~+85 Electrical and Optical Characteristics(Tc=25 ) Parameter Symbol Condition Min. Typ. Max. Unit Threshold Current Ith Po=300mW - 115 130 ma Operating Current Iop Po=300mW - 410 450 ma Operating Voltage Vop Po=300mW - 1.8 1.95 V Slope Efficiency η Po=75-225mW - 1 - mw/ma Monitor Current Im Po=300mW 0.1 0.25 1 ma Beam Divergence Parallel θ // Po=300mW - 9 14 deg. (FWHM) Perpendicular θ Po=300mW - 20 25 deg. Lasing Wavelength λ Po=300mW 820 830 840 nm θ // and θ are defined as the angle within which the intensity is 50% of the peak value. Quality Notice This device is still under product development. Typical characteristic curves Optical Output Power v.s. Forward Current Optical Output Power (mw) 400 300 200 100 0 25 o C 30 o C 40 o C 50 o C 60 o C 0 50 100 150 200 250 300 350 400 450 500 Forward Current (ma) 2 / 5

2.0 Forward Voltage v.s. Forward Current Forward Voltage (V) 1.8 1.6 1.4 30 o C 25 o C 40 o C 50o C 60 o C 1.2 0 50 100 150 200 250 300 350 400 450 500 Forward Current (ma) 845 Peak Wavelength v.s. Case Temperature Peak Wavelength (nm) 840 835 830 825 Relative Intensity 1.0 0.8 0.6 0.4 0.2 PO=300mW Tc=25 o C Far-Field Pattern Perpendicular Parallel 0.0-60 -50-40 -30-20 -10 0 10 20 30 40 50 60 Angle (degree) 3 / 5

Monitor Current (ma) 0.25 Tc=25 o C 0.20 0.15 0.10 0.05 Monitor Current v.s. Optical Output Power 0.00 0 50 100 150 200 250 300 Optical Output Power (mw) Slope Efficiency (mw/ma) 1.4 1.2 1.0 0.8 0.6 0.4 Slope Efficiency v.s. Case Temperature 1000 Threshold Current v.s. Case Temperature Threshold Current (ma) 100 4 / 5

Precautions QUALITY ASSURANCE After any processing of laser chip or laser diode TO-CAN (LD) by the customer, the performance, yield and reliability of the product, in which the chip or LD is applied, are subject to change due to customer s handling, assembly, testing, and processing. Because laser chip and LD are strongly affected by environmental conditions, physical stress, and chemical stresses imposed by customer that are not in Union Optronics Corp. (UOC) control and hence no guarantee on the characteristics and the reliability at all after the shipment. Also, UOC does not have any responsibility for field failures in a customer product. When attaching a heat sink to laser chip or LD, be careful not to apply excessive force to the device in the process. SAFETY PRECAUTIONS Although Union Optronics Corp. (UOC) keeps improving quality and reliability of its laser chip and laser diode TO-CAN (LD), semiconductor devices in general can malfunction or fail due to their intrinsic characteristics. Hence, it is required that the customer s products are designed with full regard to safety by incorporating the redundancy, fire prevention, error prevention so that any problems or error with UOC laser chip or LD does not cause any accidents resulting in injury, death, fire, property damage, economic damage, or environmental damage. In case customer wants to use UOC laser chip or LD in the systems requiring high safety, customer is requested to confirm safety of entire systems with customer s own testing. SPECIFICATIONS ARE SUBJECT TO CHANGE WITHOUT NOTICE. The information provided by Union Optronics Corp. (UOC), including but not limited to technical specifications, recommendations, and application notes relating to laser chip or laser diode TO-CAN (LD) is believed to be reliable and accurate and is subject to change without notice. UOC reserves the right to change its assembly, test, design, form, specification, control, or function without notice. 5 / 5