VS-ETX506-M3, VS-ETX506FP-M3 Hyperfast Rectifier, 5 FRED Pt Vishay Semiconductors FETURES 2L TO-220C Base cathode 2 2L TO-220 FULL-PK Hyperfast recovery time, extremely low Q rr Low forward voltage drop 75 C operating junction temperature Low leakage current Fully isolated package (V INS = 2500 V RMS ) True 2 pin package Compliant to RoHS Directive 2002/95/EC Halogen-free according to IEC 6249-2-2 definition Designed and qualified according to JEDEC-JESD47 Cathode 3 node VS-ETX506-M3 PRODUCT SUMMRY Cathode 2 node VS-ETX506FP-M3 Package 2L TO-220C, 2L TO-220FP I F(V) 5 V R 600 V V F at I F 3.4 V t rr (typ.) 8 ns T J max. 75 C Diode variation Single die DESCRIPTION/PPLICTIONS State of the art hyperfast recovery rectifiers designed with optimized performance of forward voltage drop, hyperfast recovery time, and soft recovery. The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in PFC boost stage in the C/DC section of SMPS, inverters or as freewheeling diodes. The extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. BSOLUTE MXIMUM RTINGS PRMETER SYMBOL TEST CONDITIONS VLUES UNITS Peak repetitive reverse voltage V RRM 600 V T C = 4 C verage rectified forward current in DC I F(V) 5 FULL-PK T C = 7 C Non-repetitive peak surge current I FSM T J = 25 C 20 Operating junction and storage temperatures T J, T Stg - 65 to 75 C ELECTRICL SPECIFICTIONS (T J = 25 C unless otherwise specified) PRMETER SYMBOL TEST CONDITIONS MIN. TYP. MX. UNITS Breakdown voltage, blocking voltage V BR, V R I R = 00 μ 600 - - I F = 5-2.5 3.4 Forward voltage V F I F = 5, T J = 50 C -.55 2 V R = V R rated - 0.02 36 Reverse leakage current I R T J = 50 C, V R = V R rated - 40 250 μ Junction capacitance C T V R = 600 V - 2 - pf Series inductance L S Measured lead to lead 5 mm from package body - 8 - nh V Document Number: 93549 For technical questions within your region, please contact one of the following: www.vishay.com Revision: -Mar- Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THE PRODUCT DESCRIBED HEREIN ND THIS DTSHEET RE SUBJECT TO SPECIFIC DISCLIMERS, SET FORTH T www.vishay.com/doc?9000
VS-ETX506-M3, VS-ETX506FP-M3 Vishay Semiconductors Hyperfast Rectifier, 5 FRED Pt DYNMIC RECOVERY CHRCTERISTICS (T J = 25 C unless otherwise specified) PRMETER SYMBOL TEST CONDITIONS MIN. TYP. MX. UNITS I F =, di F /dt = 00 /μs, V R = 30 V - 7 23 Reverse recovery time t rr I F = 5, di F /dt = 00 /μs, V R = 30 V - 8 30 T J = 25 C - 20 - ns T J = 25 C - 45 - Peak recovery current I RRM T I F = 5 J = 25 C - 2.7 - di F /dt = 200 /μs T J = 25 C V R = 390 V - 5.5 - T J = 25 C - 26 - Reverse recovery charge Q rr T J = 25 C - 30 - nc Reverse recovery time t rr I F = 5-32 - ns Peak recovery current I RRM T J = 25 C di F /dt = 800 /μs - 7 - Reverse recovery charge Q rr V R = 390 V - 290 - nc THERML - MECHNICL SPECIFICTIONS PRMETER SYMBOL TEST CONDITIONS MIN. TYP. MX. UNITS Maximum junction and storage temperature range T J, T Stg - 65-75 C Thermal resistance, -.2.4 R thjc junction to case FULL-PK - 3.7 4.3 Thermal resistance, junction to ambient R thj Typical socket mount - - 70 C/W Typical thermal resistance, case to heatsink Weight Mounting torque Marking device R thcs Mounting surface, flat, smooth and greased Case style 2L TO-220C Case style 2L TO-220 FULL-PK - 0.5 - - 2 - g - 0.07 - oz. 6 (5) - 2 (0) ETX506 ETX506FP kgf cm (lbf in) www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 93549 2 Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com Revision: -Mar- THE PRODUCT DESCRIBED HEREIN ND THIS DTSHEET RE SUBJECT TO SPECIFIC DISCLIMERS, SET FORTH T www.vishay.com/doc?9000
VS-ETX506-M3, VS-ETX506FP-M3 Hyperfast Rectifier, 5 FRED Pt Vishay Semiconductors Instantaneous Forward Current - I F () 00 0 Tj = 75 C Tj = 25 C Tj = 50 C 0.5.0.5 2.0 2.5 3.0 3.5 4.0 Forward Voltage Drop - V F (V) Fig. - Typical Forward Voltage Drop Characteristics Reverse Current - I R (µ) Junction Capacitance - C T (pf) 000 00 0 0. 0.0 75 C 50 C 25 C 00 C 75 C 50 C 25 C 0.00 00 200 300 400 500 600 Reverse Voltage - V R (V) 00 Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage 0 0 00 200 300 400 500 600 Reverse Voltage - V R (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 0 Thermal Impedance ZthJC ( C/W) 0. D = 0.5 D = 0.2 D = 0. D = 0.05 D = 0.02 D = 0.0 Single Pulse (Thermal Resistance) 0.0 E-05 E-04 E-03 E-02 E-0 E+00 t, Rectangular Pulse Duration (Seconds) Fig. 4 - Maximum Thermal Impedance Z thjc Characteristics Document Number: 93549 For technical questions within your region, please contact one of the following: www.vishay.com Revision: -Mar- Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com 3 THE PRODUCT DESCRIBED HEREIN ND THIS DTSHEET RE SUBJECT TO SPECIFIC DISCLIMERS, SET FORTH T www.vishay.com/doc?9000
VS-ETX506-M3, VS-ETX506FP-M3 Vishay Semiconductors Hyperfast Rectifier, 5 FRED Pt 0 Thermal Impedance ZthJC ( C/W) D = 0.5 D = 0.2 D = 0. D = 0.05 D = 0.02 D = 0.0 Single Pulse (Thermal Resistance) 0. E-05 E-04 E-03 E-02 E-0 E+00 E+0 E+02 t, Rectangular Pulse Duration (Seconds) Fig. 5 - Maximum Thermal Impedance Z thjc Characteristics (FULL-PK) 80 80 llowable Case Temperature ( C) 75 70 65 60 55 50 45 40 DC llowable Case Temperature ( C) 60 40 20 00 80 DC 35 0 2 4 6 8 0 2 4 6 60 0 2 4 6 8 0 2 4 6 verage Forward Current - IF (V) () verage Forward Current - IF (V) () Fig. 6 - Maximum llowable Case Temperature vs. verage Forward Current Fig. 7 - Maximum llowable Case Temperature vs. verage Forward Current (FULL-PK) 40 verage Power Loss ( Watts ) 35 30 25 20 5 0 5 RMS Limit D = 0.0 D = 0.02 D = 0.05 D = 0. D = 0.2 D = 0.5 DC 0 0 2 4 6 8 0 2 4 6 8 20 22 verage Forward Current - IF (V) () Fig. 8 - Forward Power Loss Characteristics www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 93549 4 Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com Revision: -Mar- THE PRODUCT DESCRIBED HEREIN ND THIS DTSHEET RE SUBJECT TO SPECIFIC DISCLIMERS, SET FORTH T www.vishay.com/doc?9000
VS-ETX506-M3, VS-ETX506FP-M3 Hyperfast Rectifier, 5 FRED Pt Vishay Semiconductors 55 350 50 45 40 If = 5, 25 C 300 250 trr ( ns ) 35 30 Qrr ( nc ) 200 50 If = 5, 25 C 25 20 If = 5, 25 C 00 5 typical value 0 00 000 di F /dt (/µs ) 0 00 000 di F /dt (/µs ) Fig. 9 - Typical Reverse Recovery vs. di F /dt Fig. 0 - Typical Stored Charge vs. di F /dt 50 If = 5, 25 C typical value V R = 200 V L = 70 μh 0.0 Ω D.U.T. di F /dt adjust G D IRFP250 S Fig. - Reverse Recovery Parameter Test Circuit (3) t rr 0 I F t a tb (2) I RRM (4) Q rr 0.5 I RRM di (rec)m /dt (5) 0.75 I RRM () di F /dt () di F /dt - rate of change of current through zero crossing (4) Q rr - area under curve defined by t rr and I RRM (2) I RRM - peak reverse recovery current (3) t rr - reverse recovery time measured from zero crossing point of negative going I F to point where a line passing through 0.75 I RRM and 0.50 I RRM extrapolated to zero current. Q rr = t rr x I RRM 2 (5) di (rec)m /dt - peak rate of change of current during t b portion of t rr Fig. 2 - Reverse Recovery Waveform and Definitions Document Number: 93549 For technical questions within your region, please contact one of the following: www.vishay.com Revision: -Mar- Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com 5 THE PRODUCT DESCRIBED HEREIN ND THIS DTSHEET RE SUBJECT TO SPECIFIC DISCLIMERS, SET FORTH T www.vishay.com/doc?9000
VS-ETX506-M3, VS-ETX506FP-M3 Vishay Semiconductors Hyperfast Rectifier, 5 FRED Pt ORDERING INFORMTION TBLE Device code VS- E T X 5 06 FP -M3 2 3 4 5 6 7 8 - Vishay Semiconductors product 2 - Circuit configuration: E = Single diode 3 - T = TO-220 4 - X = Hyperfast recovery time 5 - Current code: 5 = 5 6 - Voltage code: 06 = 600 V 7 - None = TO-220 FP = FULL-PK 8 - Environmental digit: -M3 = Halogen-free, RoHS compliant and terminations lead (Pb)-free ORDERING INFORMTION (Example) PREFERRED P/N QUNTITY PER TUBE MINIMUM ORDER QUNTITY PCKGING DESCRIPTION VS-ETX506-M3 50 000 ntistatic plastic tube VS-ETX506FP-M3 50 000 ntistatic plastic tube Dimensions Part marking information LINKS TO RELTED DOCUMENTS 2L TO-220C 2L TO-220 FULL-PK 2L TO-220C 2L TO-220 FULL-PK www.vishay.com/doc?95259 www.vishay.com/doc?95260 www.vishay.com/doc?9539 www.vishay.com/doc?95392 www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 93549 6 Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com Revision: -Mar- THE PRODUCT DESCRIBED HEREIN ND THIS DTSHEET RE SUBJECT TO SPECIFIC DISCLIMERS, SET FORTH T www.vishay.com/doc?9000
Outline Dimensions Vishay High Power Products True 2 Pin TO-220 DIMENSIONS in millimeters and inches 0.002" 0.05 mm Ø P E B F Q H D 0.50" REF. Term. 4 Ø 2.0 mm REF. 45 L b L b c 60 2 e J SYMBOL MILLIMETERS INCHES MIN. MX. MIN. MX. 4.32 4.57 0.70 0.80 b 0.7 0.9 0.028 0.036 b.5.39 0.045 0.055 c 0.36 0.53 0.04 0.02 D 4.99 5.49 0.590 0.60 E 0.04 0.4 0.395 0.40 e 5.08 BSC 0.200 BSC F.22.37 0.048 0.054 H 5.97 6.47 0.235 0.255 J 2.54 2.79 0.00 0.0 L 3.47 3.97 0.530 0.550 L () 3.3 3.8 0.30 0.50 Ø P 3.79 3.88 0.49 0.53 Q 2.60 2.84 0.02 0.2 Notes () Lead dimension and finish uncontrolled in L These dimensions are within allowable dimensions of JEDEC TO-220B rev. J outline dated 3-24-87 Controling dimension: Inch Document Number: 95259 For technical questions concerning discrete products, contact: diodestech@vishay.com www.vishay.com Revision: 2-Jan-0 For technical questions concerning module products, contact: indmodules@vishay.com
True 2 Pin TO-220 FULL-PK Outline Dimensions Vishay High Power Products DIMENSIONS in millimeters and inches Ø Q F E Q H D Q 2 θ L b L b e C J SYMBOL MILLIMETERS INCHES MIN. MX. MIN. MX. 4.53 4.93 0.78 0.94 b 0.7 0.9 0.028 0.036 b.5.39 0.045 0.055 C 0.36 0.53 0.04 0.02 D 5.67 6.07 0.67 0.633 E 9.96 0.36 0.392 0.408 e 5.08 typical 0.200 typical F 2.34 2.74 0.092 0.07 H 6.50 6.90 0.256 0.272 J 2.56 2.96 0.0 0.7 L 2.78 3.8 0.503 0.59 L 2.23 2.63 0.088 0.04 Ø Q 2.98 3.38 0.7 0.33 Q 3.0 3.50 0.22 0.38 Q 2 4.80 5.20 0.583 0.598 θ 0 5 0 5 Document Number: 95260 For technical questions concerning discrete products, contact: diodestech@vishay.com www.vishay.com Revision: 22-Jan-0 For technical questions concerning module products, contact: indmodules@vishay.com
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