GHz GaAs MMIC Image Reject Mixer

34.46. GHz GaAs MMIC July 27 Rev 2Jul7 M12BD Features Fundamental 7. Conversion Loss 2. Image Rejection +24 m Input Third Order Intercept 1% OnWafer RF Testing 1% Visual Inspection to MILSTD883 Method 21 General Description Mimix Broadband s 34.46. GHz GaAs MMIC fundamental image reject mixer can be used as an up or downconverter. The device has a conversion loss of 7. with a 2. image rejection across the band. I and Q mixer outputs are provided and an external 9 degree hybrid is required to select the desired sideband. This MMIC uses Mimix Broadband s GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeterwave PointtoPoint Radio, LMDS, SATCOM and VSAT applications. Chip Device Layout XM12BD Absolute Maximum Ratings Gate Bias Voltage (Vg) Input Power (RF Pin) Input Power (IF Pin) Storage Temperature (Tstg) Operating Temperature (Ta) +.3 VDC +2. m +2. m 6 to +16 O C to +12 O C Electrical Characteristics (Ambient Temperature T = 2 o C) Parameter Frequency Range (RF) Upper Side Band Frequency Range (RF) Lower Side Band Frequency Range (LO) Frequency Range (IF) RF Return Loss (S11) IF Return Loss (S22) LO Return Loss (S33) Conversion Loss (S21) LO Input Drive (PLO) Image Rejection Isolation LO/RF Isolation LO/IF Isolation RF/IF Input Third Order Intercept (IIP3) Gate Bias Voltage (Vg1) Mimix Broadband, Inc., 179 Rockley Rd., Houston, Texas 7799 Page 1 of 8 Tel: 281.988.46 Fax: 281.988.461 mimixbroadband.com Characteristic Data and Specifications are subject to change without notice. 27 Mimix Broadband, Inc. Units GHz GHz GHz GHz m c m VDC Min. 34. 34. 3. DC 1. 2. Typ. 18. 1. 8. 7. +12. 2. 11. 3. 3. +24.. Max. 46. 46.. 4. 8. +.1

34.46. GHz GaAs MMIC July 27 Rev 2Jul7 M12BD Mixer Measurements XM12BD, USB Conversion Gain (666 devices) XM12BD, USB Image Rejection (666 devices) 2 4 6 Conv. Gain () 8 12 14 Image Rejection (c) 1 2 16 3 18 3 34 36 38 4 Max Median Mean Min 4 34 36 38 4 Max Median Mean XM12BD, LSB Conversion Gain (666 devices) XM12BD, LSB Image Rejection (666 devices) 2 4 6 Conv. Gain () 8 12 Image Rejection (c) 1 2 14 3 16 18 3 34 36 38 4 4 34 36 38 4 Max Median Mean 3sigma Max Median Mean RF Return Loss () LO Return Loss () () 2 4 6 8 12 14 16 18 22 24 26 28 3 3 3. 31 31. 32 32. 33 33. 34 34. 3 3. 36 36. 37 37. 38 38. 39 39. 4 RF Freq (GHz) () 2 4 6 8 12 14 16 18 3 3. 31 31. 32 32. 33 33. 34 34. 3 3. 36 36. 37 37. 38 38. 39 39. 4 LO Freq (GHz) Mimix Broadband, Inc., 179 Rockley Rd., Houston, Texas 7799 Page 2 of 8 Tel: 281.988.46 Fax: 281.988.461 mimixbroadband.com Characteristic Data and Specifications are subject to change without notice. 27 Mimix Broadband, Inc.

34.46. GHz GaAs MMIC July 27 Rev 2Jul7 M12BD Mixer Measurements (cont.) IF Return Loss 2 LO to RF Isolation () 4 6 8 12 1 () 14 16 18 2 22 24 3.4 2.4 4. 6. 8.4 1 Frequency (GHz) 26 28 3 3 32 34 36 38 4 LO Freq (GHz) Mimix Broadband, Inc., 179 Rockley Rd., Houston, Texas 7799 Tel: 281.988.46 Fax: 281.988.461 mimixbroadband.com Page 3 of 8 Characteristic Data and Specifications are subject to change without notice. 27 Mimix Broadband, Inc.

34.46. GHz GaAs MMIC July 27 Rev 2Jul7 M12BD Mixer Measurements (cont.) XM12BD_4samples: USB Down Conversion gain () vs. RF USB (GHz) LO = 12 and 1m, IF = 2GHz, RF = 2m, Vg =.V XM12BD_4samples: LSB Down Conversion gain () vs. RF LSB (GHz) LO = 12 to 1m, IF = 2GHz, RF = 2m, Vg =.V 6 6 8 8 USB Conversion gain () 12 14 16 1 2 3 LSB Image Rejection () LSB Conversion gain () 12 14 16 1 2 3 USB Image Rejection () 18 3 18 3 4 3 37 39 41 43 4 RF USB (GHz) IF=2 GHz 4 33 3 37 39 41 43 4 RF LSB (GHz) IF=2 GHz XM12BD_4samples: USB Down Conversion gain () vs. RF USB (GHz) LO = 12 and 1m, IF = 2MHz, RF = 2m, Vg =.V XM12BD_4samples: LSB Down Conversion gain () vs. RF LSB (GHz) LO = 12 to 1m, IF = 2MHz, RF = 2m, Vg =.V 6 6 8 8 USB Conversion gain () 12 14 16 1 2 3 USB Image Rejection () LSB Conversion gain () 12 14 16 1 2 3 USB Image Rejection () 18 3 18 3 4 32 34 36 38 4 42 RF USB (GHz) IF=2 MHz 4 32 34 36 38 4 42 RF LSB (GHz) IF=2 MHz XM12BD_4samples: USB Down Conversion gain () vs. RF USB (GHz) LO = 12 and 1m, IF = 2MHz, RF = 2m, Vg =.V XM12BD_4samples: LSB Down Conversion gain () vs. RF LSB (GHz) LO = 12 to 1m, IF = 2MHz, RF = 2m, Vg =.V 6 6 8 8 USB Conversion gain () 12 14 16 1 2 3 LSB Image Rejection () LSB Conversion gain () 12 14 16 1 2 3 USB Image Rejection () 18 3 18 3 32 34 36 38 4 42 RF USB (GHz) IF=2 MHz 4 4 32 34 36 38 4 42 RF LSB (GHz) IF=2 MHz Mimix Broadband, Inc., 179 Rockley Rd., Houston, Texas 7799 Page 4 of 8 Tel: 281.988.46 Fax: 281.988.461 mimixbroadband.com Characteristic Data and Specifications are subject to change without notice. 27 Mimix Broadband, Inc.

34.46. GHz GaAs MMIC July 27 Rev 2Jul7 M12BD Mixer Measurements (cont.) XM12BD_4samples: USB Down Conversion gain () vs. RF USB (GHz) LO = 12 and 1m, IF = 2GHz, RF = 2m, Vg =.V XM12BD_4samples: LSB Down Conversion gain () vs. RF LSB (GHz) LO = 12 to 1m, IF = 2GHz, RF = 2m, Vg =.V USB Conversion gain () 1 2, DeviceCoord=R1C7, LO Power (m)=12, DeviceCoord=R1C7, LO Power (m)=1, DeviceCoord=R11C6, LO Power (m)=12, DeviceCoord=R11C6, LO Power (m)=1, DeviceCoord=R12C, LO Power (m)=12, DeviceCoord=R12C, LO Power (m)=1, DeviceCoord=R13C7, LO Power (m)=12, DeviceCoord=R13C7, LO Power (m)=1, DeviceCoord=R1C7, LO Power (m)=12, DeviceCoord=R1C7, LO Power (m)=1, DeviceCoord=R11C6, LO Power (m)=12, DeviceCoord=R11C6, LO Power (m)=1, DeviceCoord=R12C, LO Power (m)=12 LSB Conversion gain () 1 2, DeviceCoord=R1C7, LO Power (m)=12, DeviceCoord=R1C7, LO Power (m)=1, DeviceCoord=R11C6, LO Power (m)=12, DeviceCoord=R11C6, LO Power (m)=1, DeviceCoord=R12C, LO Power (m)=12, DeviceCoord=R12C, LO Power (m)=1, DeviceCoord=R13C7, LO Power (m)=12, DeviceCoord=R13C7, LO Power (m)=1, DeviceCoord=R1C7, LO Power (m)=12, DeviceCoord=R1C7, LO Power (m)=1, DeviceCoord=R11C6, LO Power (m)=12, DeviceCoord=R11C6, LO Power (m)=1, DeviceCoord=R12C, LO Power (m)=12, DeviceCoord=R12C, LO Power (m)=1, DeviceCoord=R13C7, LO Power (m)=12, DeviceCoord=R13C7, LO Power (m)=1, DeviceCoord=R12C, LO Power (m)=1 3, DeviceCoord=R13C7, LO Power (m)=12, DeviceCoord=R13C7, LO Power (m)=1 3 3 3 4 26 28 3 32 34 36 38 4 42 44 46 RF USB (GHz) 4 2 22 24 26 28 3 32 34 36 38 4 42 44 46 RF LSB (GHz) XM12BD_3_samples: IIP3 (m) in USB downconversion vs. RF fre LO = 1m, IF = 2GHz, IFo t = 14m per Tone, 1MHz separation,vg =.8V 3 2 2 IIP3 avg (m) 1 1 222_264_R12C13_USB_2324_183_1m_1V.ip3 3 36 37 38 39 4 41 42 43 RF fre (GHz) 4 LO to IF Isolation () 4 RF to IF Isolation () 3 3 LO to IF Isolation () 3 2 2 1 1 RF to IF Isolation () 3 2 2 1 1 34 3 36 37 38 39 4 41 LO (GHz) 34 3 36 37 38 39 4 41 Mimix Broadband, Inc., 179 Rockley Rd., Houston, Texas 7799 Page of 8 Tel: 281.988.46 Fax: 281.988.461 mimixbroadband.com Characteristic Data and Specifications are subject to change without notice. 27 Mimix Broadband, Inc.

34.46. GHz GaAs MMIC July 27 Rev 2Jul7 Mechanical Drawing 1.62 (.64).79 (.23) 2 M12BD 3 1.324 (.2).494 (.19) 1 4.72 (.29) XM12BD...79 (.23) 1.21 (.48) (Note: Engineering designator is 4IRM421) Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad. Thickness:.11 +/.1 (.43 +/.4), Backside is ground, Bond Pad/Backside Metallization: Gold All Bond Pads are.1 x.1 (.4 x.4). Bond pad centers are approximately.19 (.4) from the edge of the chip. Dicing tolerance: +/. (+/.2). Approximate weight: 1.21 mg. Bond Pad #1 (RF) Bond Pad #2 (IF1) Bond Pad #3 (Vg) Bond Pad #4 (LO) Bond Pad # (IF2) Bias Arrangement IF1 2 Bypass Capacitors See App Note [2] 3 Vg 4 LO RF 1 XM12BD IF2 Mimix Broadband, Inc., 179 Rockley Rd., Houston, Texas 7799 Page 6 of 8 Tel: 281.988.46 Fax: 281.988.461 mimixbroadband.com Characteristic Data and Specifications are subject to change without notice. 27 Mimix Broadband, Inc.

34.46. GHz GaAs MMIC July 27 Rev 2Jul7 M12BD App Note [1] Biasing As shown in the bonding diagram, the phemt mixer devices are operated using a separate gate voltage Vg1. Set Vg1=.V for optimum conversion loss performance. App Note [2] Bias Arrangement Each DC pad (Vg1) needs to have DC bypass capacitance (~1 pf) as close to the device as possible. Additional DC bypass capacitance (~.1 uf) is also recommended. App Note [3] USB/LSB Selection LSB USB For Upper Side Band operation (USB): With IF1 and IF2 connected to the direct port (º) and coupled port (9º) respectively as shown in the diagram, the USB signal will reside on the isolated port. The input port must be loaded with ohms. IF2 IF1 An alternate method of selection of USB or LSB: USB For Lower Side Band operation (LSB): With IF1 and IF2 connected to the direct port (º) and coupled port (9º) respectively as shown in the diagram, the LSB signal will reside on the input port. The isolated port must be loaded with ohms. LSB In Phase Combiner In Phase Combiner 9 o 9 o IF2 IF1 IF2 IF1 Mimix Broadband, Inc., 179 Rockley Rd., Houston, Texas 7799 Page 7 of 8 Tel: 281.988.46 Fax: 281.988.461 mimixbroadband.com Characteristic Data and Specifications are subject to change without notice. 27 Mimix Broadband, Inc.

34.46. GHz GaAs MMIC July 27 Rev 2Jul7 M12BD Handling and Assembly Information CAUTION! Mimix Broadband MMIC Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: Do not ingest. Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these byproducts are dangerous to the human body if inhaled, ingested, or swallowed. Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Life Support Policy Mimix Broadband's products are not authorized for use as critical components in life support devices or systems without the express written approval of the President and General Counsel of Mimix Broadband. As used herein: (1) Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. (2) A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ESD Gallium Arsenide (GaAs) devices are susceptible to electrostatic and mechanical damage. Die are supplied in antistatic containers, which should be opened in cleanroom conditions at an appropriately grounded antistatic workstation. Devices need careful handling using correctly designed collets, vacuum pickups or, with care, sharp tweezers. Die Attachment GaAs Products from Mimix Broadband are.1 mm (.4") thick and have vias through to the backside to enable grounding to the circuit. Microstrip substrates should be brought as close to the die as possible. The mounting surface should be clean and flat. If using conductive epoxy, recommended epoxies are Tanaka TS3332LD, Die Mat DM63HK or DM63HKPt cured in a nitrogen atmosphere per manufacturer's cure schedule. Apply epoxy sparingly to avoid getting any on to the top surface of the die. An epoxy fillet should be visible around the total die periphery. For additional information please see the Mimix "Epoxy Specifications for Bare Die" application note. If eutectic mounting is preferred, then a fluxless goldtin (AuSn) preform, approximately.1 2 thick, placed between the die and the attachment surface should be used. A die bonder that utilizes a heated collet and provides scrubbing action to ensure total wetting to prevent void formation in a nitrogen atmosphere is recommended. The goldtin eutectic (8% Au 2% Sn) has a melting point of approximately 28 ºC (Note: Gold Germanium should be avoided). The work station temperature should be 31 ºC +/ 1 ºC. Exposure to these extreme temperatures should be kept to minimum. The collet should be heated, and the die preheated to avoid excessive thermal shock. Avoidance of air bridges and force impact are critical during placement. Wire Bonding Windows in the surface passivation above the bond pads are provided to allow wire bonding to the die's gold bond pads. The recommended wire bonding procedure uses.76 mm x.13 mm (.3" x.") 99.99% pure gold ribbon with.2% elongation to minimize RF port bond inductance. Gold.2 mm (.1") diameter wedge or ball bonds are acceptable for DC Bias connections. Aluminum wire should be avoided. Thermocompression bonding is recommended though thermosonic bonding may be used providing the ultrasonic content of the bond is minimized. Bond force, time and ultrasonics are all critical parameters. Bonds should be made from the bond pads on the die to the package or substrate. All bonds should be as short as possible. RoHS Compliant Parts All Mimix products are RoHS compliant unless specifically ordered with TinLead finish. Ordering Information Part Number for Ordering XM12BDV XM12BDEV1 Description V vacuum release gel paks XM12 die evaluation module Mimix Broadband, Inc., 179 Rockley Rd., Houston, Texas 7799 Page 8 of 8 Tel: 281.988.46 Fax: 281.988.461 mimixbroadband.com Characteristic Data and Specifications are subject to change without notice. 27 Mimix Broadband, Inc.