MTM761100LBF MTM761100LBF. Silicon P-channel MOSFET For Switching. Doc No. TT4-EA Revision. 2. Internal Connection. Pin Name

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Transcription:

Established : 28-31 Revised : 2135 Doc No. TT4-EA443 MTM711LBF Silicon P-channel MOSFET For Switching Features Low Drain-source On-state Resistance : RDS(on) typ. = 3 m (VGS = -4. V) Low Drive Voltage : 1.8 V Drive Halogen-free / RoHS compliant (EU RoHS / UL-94 V- / MSL : Level 1 compliant) Marking Symbol : Absolute Maximum Ratings Ta = 25 C Parameter Symbol Rating Unit Drain to Source Voltage VDS 2 V Gate to Source Voltage VGS 8 V Drain Current ID -4. A Drain Current (Pulsed) *1 IDp A Total Power Dissipation *2 PD 7 mw Channel Temperature Tch 15 Operating ambient temperature Topr -4 to +85 C Storage Temperature Range Tstg -55 to +15 Note: 9D Packaging Embossed type (Thermo-compression sealing) 3 pcs / reel (standard) *1 Pulse width 1 s, Duty cycle 1 % *2 Measuring on ceramic board at 4 mm 38 mm.1 mm. Absolute maximum rating PD Non-heat sink shall be made 15 mw. MTM711LBF 2. 5 1 2 Unit : mm 1. Drain 4. Source 2. Drain 5. Drain 3. Gate. Drain Panasonic JEITA Code.2 (.5)(.5) 1.3 4 1.7 2.1.7 WSMini-F1-B SC13DA Internal Connection 3 5 (S) 4.13 1 2 3 (G) Pin Name 1. Drain 4. Source 2. Drain 5. Drain 3. Gate. Drain Page 1 of

Established : 28-31 Revised : 2135 Doc No. TT4-EA443 MTM711LBF Electrical Characteristics Ta = 25 C 3 C Parameter Symbol Conditions Min Typ Max Unit Drain-source Breakdown Voltage VDSS ID = ma, VGS = V 2 V Zero Gate Voltage Drain Current IDSS VDS = 2 V, VGS = V. A Gate-source Leakage Current IGSS VGS =.4 V, VDS = V 1 A Gate-source Threshold Voltage Vth ID =. ma, VDS = -. V -.3 -.5. V RDS(ON)1 ID = A, VGS = -4. V 3 42 Drain-source On-state Resistance *1 RDS(ON)2 ID = -.5 A, VGS = -2.5 V 35 55 m RDS(ON)3 ID = -.2 A, VGS =.8 V 45 75 Forward transfer admittance *1 Yfs ID = A, VDS = V, f = 1 khz 3.5 S Input Capacitance Ciss 12 VDS = V, VGS = V Output Capacitance Coss 11 f = 1 MHz Reverse Transfer Capacitance Crss 11 pf Turn-on Time *2 ton VDD = - V, VGS = to -4 V ID = A 3 ns Turn-off Time *2 toff VDD = - V, VGS = -4 to V ID = A 3 ns Note: Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 73 Measuring methods for transistors. *1 Pulse test : Pulse width 3 s, Duty cycle 2 % *2 Measurement circuit for Turn-on Time / Turn-off Time Page 2 of

Established : 28-31 Revised : 2135 Doc No. TT4-EA443 MTM711LBF *2 Measurement circuit for Turn-on Time / Turn-off Time VDD = - V V Vin ID = A RL = Vout -4 V PW = 1 s D.C. 1 % D Vin G 5 S 1 % Vin 9 % 1 % Vout 9 % ton toff Page 3 of

Established : 28-31 Revised : 2135 Doc No. TT4-EA443 MTM711LBF ID - VDS Technical Data ( reference ) ID - VGS -4 -.1 Drain Current ID (A) -3-2 -4.5 V -2.5 V -2. V.5 V VGS =. V Drain current ID (A) -.8 -. -.4 -.2 Ta = 85 25-4 -.1 -.2 -.3 -.4 -.5..2.4..8 1 1.2 1.4 1. 1.8 2 Drain-source Voltage VDS (V) Gate-source voltage VGS (V) VDS - VGS RDS(on) - ID -.2 1 Drain-source Voltage VDS (V) -.1 -.5 A ID = -2. A. A Drain source On-state Resistance RDS (on) (m ) -2.5 V.8 V VGS = -4.5 V -2-3 -4-5 1 -.1 Gate-source Voltage VGS (V) Drain current ID (A) Capacitance - VDS Dynamic Input/Output Characteristics 1 - Capacitance C (pf) 1 1 Ciss Coss Crss Gate-source Voltage VGS (V) -5-4 -3-2 VDD = - V 1 -.1 Drain-source Voltage VDS (V) 5 1 15 2 Total Gate Charge Qg (nc) Page 4 of

Established : 28-31 Revised : 2135 Doc No. TT4-EA443 Vth - Ta Technical Data ( reference ) 7 RDS(on) - Ta MTM711LBF Gate-source Threshold Voltage Vth (V) -.8 -. -.4 -.2 Drain-source On-resistance RDS(on) (m ) 5 4 3 2 1-2.5 V VGS = - 1. 8 V - 4. V -5 5 1 15 Temperature ( ) -5 5 1 15 Temperature ( ) PD - Ta Total Power Dissipation PD (W) 1.8..4.2 Mounted on ceramic board (4 x 38 x.2 mm) Non-heat sink 5 1 15 Temperature Ta ( ) Thermal Resistance Rth ( C/W) Rth - tsw 1 1 1.1 1 1 1 1 Pulse Width tsw (s) Drain current ID (A) -.1 IDp = -2 A Safe Operating Area Operation in this area is limited by RDS(on) Ta = 25, Glass epoxy board (25.4 25.4 t.8 mm) coated with copper foil, which has more than 3 mm 2. DC -.1 -.1 -.1 Drain-source voltage VDS (V) 1 ms 1 ms 1 ms 1 s Page 5 of

Established : 28-31 Revised : 2135 Doc No. TT4-EA443 MTM711LBF WSMini-F1-B Unit : mm 2.±.1.2 +.5 -.2.13 +.5 -.3 5 4 1.7±.1 2.1±.1 1 2 3 (5 ) (5 ) (.5) (.5) 1.3±.1 to.1 (.2).7±.1 (.15) Land Pattern (Reference) (Unit : mm).5.5. 2..45 Page of

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