PD-9386G IRHNA57264SE RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) 25V, N-CHANNEL REF: MIL-PRF-95/684 R 5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D QPL Part Number IRHNA57264SE krads(si).6 45A SMD-2 Description IRHNA57264SE is part of the International Rectifier HiRel family of products. IR HiRel R5 technology provides high performance power MOSFETs for space applications. These devices have been characterized for both Total Dose and Single Event Effect (SEE) with useful performance up to LET of 8 (MeV/(mg/cm 2 ). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC-DC converters and motor controllers. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. Features Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Electrically Isolated Ceramic Package Light Weight Surface Mount ESD Rating: Class 3A per MIL-STD-75, Method 2 Absolute Maximum Ratings Parameter Units I D @ V GS = 2V, T C = 25 C Continuous Drain Current 45 I D @ V GS = 2V, T C = C Continuous Drain Current 28 A I DM Pulsed Drain Current 8 P D @T C = 25 C Maximum Power Dissipation 25 W Linear Derating Factor 2. W/ C V GS Gate-to-Source Voltage ±2 V E AS Single Pulse Avalanche Energy 222 mj I AR Avalanche Current 45 A E AR Repetitive Avalanche Energy 25 mj dv/dt Peak Diode Recovery dv/dt 5. V/ns T J Operating Junction and -55 to + 5 T STG Storage Temperature Range C Lead Temperature 3 (for 5s) Weight 3.3 (Typical) g For Footnotes, refer to the page 2. International Rectifier HiRel Products, Inc.
Electrical Characteristics @ Tj = 25 C (Unless Otherwise Specified) IRHNA57264SE Parameter Min. Typ. Max. Units Test Conditions BV DSS Drain-to-Source Breakdown Voltage 25 V V GS = V, I D =.ma BV DSS / T J Breakdown Voltage Temp. Coefficient.28 V/ C Reference to 25 C, I D =.ma R DS(on) Static Drain-to-Source On-Resistance.6 V GS = 2V, I D = 28A V GS(th) Gate Threshold Voltage 2.5 4.5 V V DS = V GS, I D =.ma Gfs Forward Transconductance 27 S V DS = 5V, I D = 28A I DSS V DS = 2V, V GS = V Zero Gate Voltage Drain Current µa 25 V DS = 2V,V GS = V,T J =25 C I GSS Gate-to-Source Leakage Forward V GS = 2V na Gate-to-Source Leakage Reverse - V GS = -2V Q G Total Gate Charge 65 I D = 45A Q GS Gate-to-Source Charge 45 nc V DS = 25V Q GD Gate-to-Drain ( Miller ) Charge 75 V GS = 2V t d(on) Turn-On Delay Time 35 V DD = 25V tr Rise Time 25 I D = 45A ns t d(off) Turn-Off Delay Time 8 R G = 2.35 t f Fall Time 65 V GS = 2V Ls +L D Total Inductance 4. nh Measured from center of Drain pad to center of Source pad C iss Input Capacitance 545 V GS = V C oss Output Capacitance 78 pf V DS = 25V C rss Reverse Transfer Capacitance 7 ƒ =.MHz Source-Drain Diode Ratings and Characteristics Parameter Min. Typ. Max. Units Test Conditions I S Continuous Source Current (Body Diode) 45 I SM Pulsed Source Current (Body Diode) 8 A V SD Diode Forward Voltage.2 V T J =25 C, I S = 45A, V GS =V t rr Reverse Recovery Time 56 ns T J =25 C, I F = 45A,V DD 5V Q rr Reverse Recovery Charge 8.6 µc di/dt = A/µs t on Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L S +L D ) Thermal Resistance Parameter Min. Typ. Max. Units R JC Junction-to-Case.5 C/W R J-PCB Junction-to-PC Board (Soldered to 2 sq copper clad board).6 Footnotes: Repetitive Rating; Pulse width limited by maximum junction temperature. V DD = 5V, starting T J = 25 C, L =.22mH, Peak I L = 45A, V GS = 2V I SD 45A, di/dt 274A/µs, V DD 25V, T J 5 C Pulse width 3 µs; Duty Cycle 2% Total Dose Irradiation with V GS Bias: 2 volt V GS applied and V DS = during irradiation per MIL-STD-75, Method 9, condition A. Total Dose Irradiation with V DS Bias: 2 volt V DS applied and V GS = during irradiation per MlL-STD-75, Method 9, condition A. 2 International Rectifier HiRel Products, Inc.
Radiation Characteristics IR HiRel radiation hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at IR Hirel is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table. Electrical Characteristics @ Tj = 25 C, Post Total Dose Irradiation Parameter krads (Si) Min. Max. Units Test Conditions BV DSS Drain-to-Source Breakdown Voltage 25 V V GS = V, I D =.ma V GS(th) Gate Threshold Voltage 2. 4.5 V V DS = V GS, I D =.ma I GSS Gate-to-Source Leakage Forward na V GS = 2V I GSS Gate-to-Source Leakage Reverse - na V GS = -2V I DSS Zero Gate Voltage Drain Current µa V DS = 2V, V GS = V R DS(on) R DS(on) Static Drain-to-Source On-State Resistance (TO-3) Static Drain-to-Source On-State Resistance (SMD-2).6 V GS = 2V, I D = 28A.6 V GS = 2V, I D = 28A V SD Diode Forward Voltage.2 V V GS = V, I D = 45A IR HiRel radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Typical Single Event Effect Safe Operating Area LET Energy Range VDS (V) (MeV/(mg/cm 2 )) (MeV) (µm) @ VGS = V @ VGS=-5V @ VGS=-V @ VGS =-5V @ VGS=-2V 38 ± 5% 3 ± 7.5% 38 ± 7.5% 25 25 25 25 25 6 ± 5% 33 ± 7.5% 3 ± % 25 25 25 25 24 84 ± 5% 35 ± 7.5% 28 ± 7.5% 25 25 225 75 5 Bias VDS (V) 3 25 2 5 5-5 - -5-2 LET=38 ± 5% LET=6 ± 5% LET=84 ± 5% Bias VGS (V) Fig a. Typical Single Event Effect, Safe Operating Area For Footnotes, refer to the page 2. 3 International Rectifier HiRel Products, Inc.
I D, Drain-to-Source Current (A) TOP BOTTOM VGS 5V 2V V 9.V 8.V 7.V 6.V 5.V 5.V I D, Drain-to-Source Current (A) TOP BOTTOM VGS 5V 2V V 9.V 8.V 7.V 6.V 5.V 5.V C, Capacitance (pf) I D, Drain-to-Source Current (A) 2µs PULSE WIDTH. T J = 25 C. V DS, Drain-to-Source Voltage (V) 8 6 4 2 Fig. Typical Output Characteristics V DS = 5V 2µs PULSE WIDTH 5 6 7 8 9 V GS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics VGS = V, f = MHz Ciss = Cgs + Cgd, C ds SHORTED Crss = Cgd Coss = Cds + Cgd C iss C oss C rss T J = 25 C T J = 5 C V DS, Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage R DS(on), Drain-to-Source On Resistance (Normalized) Fig 2. Typical Output Characteristics Fig 4. Normalized On-Resistance Vs. Temperature V GS, Gate-to-Source Voltage (V) 2µs PULSE WIDTH. T J = 5 C. V DS, Drain-to-Source Voltage (V) 2.5 2..5..5 V GS = 2V. -6-4 -2 2 4 6 8 2 4 6 T J, Junction Temperature ( C) 2 5 5 I D 49A ID = 45A I ID D = 49A 45A V DS = 2V V DS = 25V V DS = 5V FOR TEST CIRCUIT SEE FIGURE 3 4 8 2 6 2 Q G, Total Gate Charge (nc) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 4 International Rectifier HiRel Products, Inc.
I D, Drain-to-Source Current (A) I SD, Reverse Drain Current (A) T J = 5 C T J = 25 C V GS = V..4.6.8..2.4 V SD,Source-to-Drain Voltage (V).. OPERATION IN THIS AREA LIMITED BY RDS(on) Tc = 25 C Tj = 5 C Single Pulse IRHNA57264SE V DS, Drain-to-Source Voltage (V) s ms ms DC Fig 7. Typical Source-Drain Diode Forward Voltage I D, Drain Current (A) 5 4 3 2 25 5 75 25 5 T C, Case Temperature ( C) Fig 9. Maximum Drain Current Vs. Case Temperature E AS, Single Pulse Avalanche Energy (mj) 4 3 2 Fig 8. Maximum Safe Operating Area I D TOP 2A 28.5A BOTTOM 45A 25 5 75 25 5 Starting T, Junction Temperature ( J C) Fig. Maximum Avalanche Energy Vs. Drain Current Thermal Response (Z thjc ).. D =.5.2..5.2. SINGLE PULSE (THERMAL RESPONSE) Notes:. Duty factor D = t / t2 2. Peak T J= P DM x Z thjc + TC...... t, Rectangular Pulse Duration (sec) Fig. Maximum Effective Transient Thermal Impedance, Junction-to-Case 5 International Rectifier HiRel Products, Inc. PDM t t2
5V tp V (BR)DSS V DS L DRIVER R G 2V tp D.U.T I AS. + - V DD A I AS Fig 6a. Unclamped Inductive Test Circuit Fig 6b. Unclamped Inductive Waveforms Fig 7a. Gate Charge Waveform Fig 7b. Gate Charge Test Circuit Fig 8a. Switching Time Test Circuit Fig 8b. Switching Time Waveforms 6 International Rectifier HiRel Products, Inc.
Case Outline and Dimensions SMD-2 www.infineon.com/irhirel N. Sepulveda Boulevard, El Segundo, California 9245, USA Tel: + (3) 252-75 252 Junction Avenue, San Jose, California 9534, USA Tel: + (48) 434-5 25 Crawford Street, Leominster, Massachusetts 453, USA Tel: + (978) 534-5776 Data and specifications subject to change without notice. 7 International Rectifier HiRel Products, Inc.
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