Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs

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TSUS52, TSUS521, TSUS522 Infrared Emitting Diode, RoHS Compliant, 95 nm, GaAs DESCRIPTION 94 839 TSUS52 is an infrared, 95 nm emitting diode in GaAs technology molded in a blue-gray tinted plastic package. FEATURES Package type: leaded Package form: T-1¾ Dimensions (in mm): Ø 5 Leads with stand-off Peak wavelength: λ p = 95 nm High reliability Angle of half intensity: ϕ = ± 15 Low forward voltage Suitable for high pulse current operation Good spectral matching with Si photodetectors Lead (Pb)-free component in accordance with RoHS 22/95/EC and WEEE 22/96/EC APPLICATIONS Infrared remote control and free air transmission systems with low forward voltage and small package requirements Emitter in transmissive sensors Emitter in reflective sensors PRODUCT SUMMARY COMPONENT I e (mw/sr) ϕ (deg) λ P (nm) t r (ns) TSUS52 2 ± 15 95 8 TSUS521 25 ± 15 95 8 TSUS522 3 ± 15 95 8 Test conditions see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM TSUS52 Bulk MOQ: 4 pcs, 4 pcs/bulk T-1¾ TSUS521 Bulk MOQ: 4 pcs, 4 pcs/bulk T-1¾ TSUS522 Bulk MOQ: 4 pcs, 4 pcs/bulk T-1¾ MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V R 5 V Forward current 15 ma Peak forward current t p /T =.5, t p = µs M 3 ma Surge forward current t p = µs SM 2.5 A Power dissipation P V 17 mw Junction temperature T j C Operating temperature range T amb - 4 to + 85 C Storage temperature range T stg - 4 to + C Soldering temperature t 5 s, 2 mm from case T sd 26 C Thermal resistance junction/ambient J-STD-51, leads 7 mm, soldered on PCB R thja 23 K/W www.vishay.com For technical questions, contact: emittertechsupport@vishay.com Document Number: 8155 28 Rev. 2.1, 5-Sep-8

Infrared Emitting Diode, RoHS Compliant, 95 nm, GaAs TSUS52, TSUS521, TSUS522 18 12 P V - Power Dissipation (mw) 16 14 12 8 6 4 2 R thja = 23 K/W - Forward Current (ma) 8 6 4 2 R thja = 23 K/W 1 2 3 4 5 6 7 8 9 21313 T amb 1 2 3 4 5 6 7 8 9 21314 T amb Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Forward voltage = ma, t p = 2 ms V F 1.3 1.7 V Temperature coefficient of V F = ma TK VF - 1.3 mv/k Reverse current V R = 5 V I R µa Junction capacitance V R = V, f = 1 MHz, E = C j 3 pf Temperature coefficient of φ e = 2 ma TKφ e -.8 %/K Angle of half intensity ϕ ± 15 deg Peak wavelength = ma λ p 95 nm Spectral bandwidth = ma Δλ 5 nm Temperature coefficient of λ p = ma TKλ p.2 nm/k Rise time = ma t r 8 ns = 1.5 A t r 4 ns = ma t f 8 ns Fall time = 1.5 A t f 4 ns Virtual source diameter d 3.8 mm Document Number: 8155 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com Rev. 2.1, 5-Sep-8 281

TSUS52, TSUS521, TSUS522 Infrared Emitting Diode, RoHS Compliant, 95 nm, GaAs TYPE DEDICATED CHARACTERISTICS PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT Forward voltage = 1.5 A, t p = µs Radiant intensity Radiant power BASIC CHARACTERISTICS = ma, t p = 2 ms = 1.5 A, t p = µs = ma, t p = 2 ms TSUS52 V F 2.2 3.4 V TSUS521 V F 2.2 3.4 V TSUS522 V F 2.2 2.7 V TSUS52 I e 1 2 5 mw/sr TSUS521 I e 15 25 5 mw/sr TSUS522 I e 2 3 5 mw/sr TSUS52 I e 95 18 mw/sr TSUS521 I e 12 23 mw/sr TSUS522 I e 17 28 mw/sr TSUS52 φ e 13 mw TSUS521 φ e 14 mw TSUS522 φ e 15 mw IF - Forward Current (A) 1 1 SM = 2.5 A ( Single Pulse ) t p /T =.1 1.5.1.5 1-1 1. 1-2 1-1 1 1 1 1 2 94 7989 t p - Pulse Duration (ms) V F rel - Relative Forward Voltage (V) 1.2 1.1 = 1 ma 1..9.8.7 2 4 6 8 94 799 T amb Fig. 3 - Pulse Forward Current vs. Pulse Duration Fig. 5 - Relative Forward Voltage vs. Ambient Temperature 1 4 I - Forward Current (ma) F 1 3 1 2 1 1 1 I - Radiant Intensity (mw/sr) e 1 TSUS 522 TSUS52 94 7996 1-1 1 2 3 V F - Forward Voltage (V) 4 94 7991 1 1 TSUS 521 1 1 1 2 1 3 1 4 - Forward Current (ma) Fig. 4 - Forward Current vs. Forward Voltage Fig. 6 - Radiant Intensity vs. Forward Current www.vishay.com For technical questions, contact: emittertechsupport@vishay.com Document Number: 8155 282 Rev. 2.1, 5-Sep-8

Infrared Emitting Diode, RoHS Compliant, 95 nm, GaAs TSUS52, TSUS521, TSUS522 - Radiant Power (mw) e Φ.1 1 1 1 1 2 1 3 1 4 - Forward Current (ma) Fig. 7 - Radiant Power vs. Forward Current 94 7992 Φ e rel I e rel ; 1 1 1.6 1.2.8.4 94 7993 TSUS 522 = 2 ma - 1 1 5 TSUS52 T amb Fig. 8 - Relative Radiant Intensity/Power vs. Ambient Temperature 14 Φ e rel - Relative Radiant Power 1.25 1..75.5.25 9 95 94 7994 λ - Wavelength (nm) Fig. 9 - Relative Radiant Power vs. Wavelength I e rel - Relative Radiant Intensity 94 7995 1..9.8.7.6 = ma.4.2.2.4 Fig. 1 - Relative Radiant Intensity vs. Angular Displacement 1 2.6 3 4 5 6 7 8 PACKAGE DIMENSIONS in millimeters A C 5.8 ±.15 R 2.49 (sphere) 12.5 ±.3 8.7 ±.3 35.5 ±.55 7.7 ±.15 (4.7) <.7 1.2 +.2 -.1 AREA NOT PLANE 5 ±.15 1.5 ±.25 6.544-5258.2-4 Issue: 5; 3.8.98 95 1916.5 +.15 -.5 2.54 nom..5 +.15 -.5 technical drawings according to DIN specification Document Number: 8155 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com Rev. 2.1, 5-Sep-8 283

Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 9 www.vishay.com Revision: 18-Jul-8 1