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Rev. 4 29 August 27 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 26 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. http://www.philips.semiconductors.com use http://www.nxp.com http://www.semiconductors.philips.com use http://www.nxp.com (Internet) sales.addresses@www.semiconductors.philips.com use salesaddresses@nxp.com (email) The copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) - Koninklijke Philips Electronics N.V. (year). All rights reserved - is replaced with: - NXP B.V. (year). All rights reserved. - If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or phone (details via salesaddresses@nxp.com). Thank you for your cooperation and understanding, NXP Semiconductors

FEATURES Internally matched Very wide frequency range Very flat gain High gain High output power Unconditionally stable. PINNING PIN 1 V S 2, 5 GND2 3 RF out 4 GND1 6 RF in DESCRIPTION APPLICATIONS Cable systems LNB IF amplifiers General purpose ISM. DESCRIPTION Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband amplifier with internal matching circuit in a 6-pin SOT363 SMD plastic package. 6 Top view 5 1 2 3 Marking code: G5-. 4 1 MAM455 6 3 4 2, 5 Fig.1 Simplified outline (SOT363) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT V S DC supply voltage 5 6 V I S DC supply current 24.4 ma s 21 2 insertion power gain f = 1 GHz 23.2 db NF noise figure f = 1 GHz 4.9 db P L(sat) saturated load power f = 1 GHz 1.5 dbm CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-68, SNW-FQ-32A and SNW-FQ-32B. Rev. 4 29 August 27 2 of 1

LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 6134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V S DC supply voltage RF input AC coupled 6 V I S supply current 34 ma P tot total power dissipation T s 8 C 2 mw T stg storage temperature 65 +15 C T j operating junction temperature 15 C P D maximum drive power 1 dbm THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT R th j-s thermal resistance from junction to solder point P tot = 2 mw; T s 8 C 3 K/W CHARACTERISTICS V S =5V; I S = 24.4 ma; f = 1 GHz; T j =25 C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I S supply current 19 24.4 34 ma s 21 2 insertion power gain f = 1 GHz 23.2 db f = 2 GHz 23.2 db R LIN return losses input f = 1 GHz 9 db f = 2 GHz 7 db R L OUT return losses output f = 1 GHz 17 db f = 2 GHz 9 db NF noise figure f = 1 GHz 4.9 db f = 2 GHz 5.3 db BW bandwidth at s 21 2 3 db below flat gain at 1 GHz 2.8 GHz P L(sat) saturated load power f = 1 GHz 1.5 dbm f = 2 GHz 8.1 dbm P L 1 db load power at 1 db gain compression; f = 1 GHz 7.2 dbm at 1 db gain compression; f = 2 GHz 6 dbm IP3 (in) input intercept point f = 1 GHz 4.6 dbm f = 2 GHz 8.8 dbm IP3 (out) output intercept point f = 1 GHz 18.6 dbm f = 2 GHz 14.4 dbm Rev. 4 29 August 27 3 of 1

APPLICATION INFORMATION Figure 2 shows a typical application circuit for the MMIC. The device is internally matched to 5 Ω, and therefore does not need any external matching. The value of the input and output DC blocking capacitors C2 and C3 should be not more than 1 pf for applications above 1 MHz. However, when the device is operated below 1 MHz, the capacitor value should be increased. The nominal value of the RF choke L1 is 1 nh. At frequencies below 1 MHz this value should be increased to 22 nh. At frequencies above 1 GHz a much lower value must be used (e.g. 1 nh) to improve return losses. For optimal results, a good quality chip inductor such as the TDK MLG 168 (63), or a wire-wound SMD type should be chosen. Both the RF choke L1 and the 22 nf supply decoupling capacitor C1 should be located as closely as possible to the MMIC. Separate paths must be used for the ground planes of the ground pins GND1 and GND2, and these paths must be as short as possible. When using vias, use multiple vias per pin in order to limit ground path inductance. In Fig.6 the MMIC is used as a driver to the power amplifier as part of a transmitter circuit. Good linear performance and matched input and output offer quick design solutions in such applications. DC-block 1 pf input from RF circuit DC-block 1 pf DC-block 1 pf Fig.3 Simple cascade circuit. oscillator mixer wideband amplifier output MGU437 to IF circuit or demodulator MGU438 Fig.4 IF amplifier application. handbook, V s halfpage C1 V s L1 RF input C2 RF in GND1 RF out GND2 C3 RF output MGU436 antenna LNA wideband amplifier mixer to IF circuit or demodulator MGU439 Fig.2 Typical application circuit. Figure 3 shows two cascaded MMICs. This configuration doubles overall gain while preserving broadband characteristics. Supply decoupling and grounding conditions for each MMIC are the same as those for the circuit of Fig.2. The excellent wideband characteristics of the MMIC make it and ideal building block in IF amplifier applications such as LBNs (see Fig.4). As a buffer amplifier between an LNA and a mixer in a receiver circuit, the MMIC offers an easy matching, low noise solution (see Fig.5). from modulation or IF circuit oscillator Fig.5 RF amplifier application. oscillator mixer wideband amplifier to power amplifier MGU44 Fig.6 Power amplifier driver application. Rev. 4 29 August 27 4 of 1

handbook, full pagewidth 9 +1 1. 135 +.5 +2 45.8.6 +.2 +5.4 1 MHz.2 18.2.5 1 2 5 3 GHz.2 5 135.5 1 2 45 MGU449 1. 9 I S = 23.8 ma; V S = 5 V; P D = 3 dbm; Z O =5Ω. Fig.7 Input reflection coefficient (s 11 ); typical values. handbook, full pagewidth 9 +1 1. 135 +.5 3 GHz +2 45.8.6 +.2 1 MHz +5.4.2 18.2.5 1 2 5.2 5 135.5 1 2 45 MGU45 1. 9 I S = 23.8 ma; V S = 5 V; P D = 3 dbm; Z O =5Ω. Fig.8 Output reflection coefficient (s 22 ); typical values. Rev. 4 29 August 27 5 of 1

s 2 12 (db) MGU451 3 s 21 2 (dbm) MGU452 2 2 4 1 6 1 2 f (MHz) 3 1 2 f (MHz) 3 I S = 23.8 ma; V S = 5 V; P D = 3 dbm; Z O =5Ω. I S = 23.8 ma; V S = 5 V; P D = 3 dbm; Z O =5Ω. Fig.9 Isolation ( s 12 2 ) as a function of frequency; typical values. Fig.1 Insertion gain ( s 21 2 ) as a function of frequency; typical values. 2 MGU453 2 MGU454 P L (dbm) P L (dbm) 1 1 1 1 2 4 3 2 1 P D (dbm) 2 4 3 2 1 P D (dbm) V S = 5 V; f = 1 GHz; Z O =5Ω. V S = 5 V; f = 2 GHz; Z O =5Ω. Fig.11 Load power as a function of drive power at 1 GHz; typical values. Fig.12 Load power as a function of drive power at 2 GHz; typical values. Rev. 4 29 August 27 6 of 1

1 NF (db) 8 MGU455 5 K 4 MGU456 6 3 4 2 2 1 1 2 3 f (MHz) 1 2 3 f (MHz) I S = 23.8 ma; V S = 5 V; Z O =5Ω. I S = 23.8 ma; V S = 5 V; Z O =5Ω. Fig.13 Noise figure as a function of frequency; typical values. Fig.14 Stability factor as a function of frequency; typical values. Scattering parameters I S = 23.8 ma; V S =5V; P D = 3 dbm; Z O =5Ω; T amb =25 C. f (MHz) MAGNITUDE (ratio) s 11 s 21 s 12 s 22 ANGLE (deg) MAGNITUDE (ratio) ANGLE (deg) MAGNITUDE (ratio) ANGLE (deg) MAGNITUDE (ratio) ANGLE (deg) 1.2487 33.2 13.128 18.88.3393 18.97.3323 77.92 2.2728 15.23 13.939 1.35.2979 7.84.16144 92.47 4.28518 5.613 14.233 16.2.272 3.28.472 127.5 6.374 1.998 14.37 29.6.2573 8.356.5168 147.7 8.32672.99 14.418 42.25.2434 11.95.981 134.1 1.35611 1.72 14.566 54.66.231 14.59.13562 139.8 12.38865 4.465 14.683 67.44.2189 17.14.16792 152.8 14.41966 7.778 14.828 8.86.21 2.38.1988 169.9 16.44966 12.12 14.911 94.49.1929 24.4.23691 171.6 18.4659 17.78 14.941 19.4.1774 29.44.28834 153.5 2.4598 24.85 14.688 124.9.1494 36.3.3477 137.6 22.43684 32.59 14.389 14.7.1193 41.31.4964 124.2 24.38779 4.66 13.533 157.9.828 43.81.4667 113.1 26.32424 5.49 12.355 174.5.477 48.94.51421 15.9 28.25311 57.33 11.49 169.3.146 17.41.56131 98.3 3.18665 65.52 9.2745 154.9.279 94..59748 93.63 Rev. 4 29 August 27 7 of 1

PACKAGE OUTLINE Plastic surface mounted package; 6 leads SOT363 D B E A X y H E v M A 6 5 4 Q pin 1 index A 1 2 3 A1 c e1 bp w M B Lp e detail X 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A 1 max mm 1.1.8.1 bp c D E e e 1 H E L p Q v w y.3.2.25.1 2.2 1.8 1.35 1.15 1.3.65 2.2 2..45.15.25.15.2.2.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE SOT363 SC-88 97-2-28 Rev. 4 29 August 27 8 of 1

Legal information Data sheet status Document status [1][2] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term short data sheet is explained in section Definitions. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. Definitions Draft The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Disclaimers General Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of a NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer s own risk. Applications Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 6134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Contact information For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: salesaddresses@nxp.com Rev. 4 29 August 27 9 of 1

Revision history Revision history Document ID Release date Data sheet status Change notice Supersedes _N_4 27829 Product data sheet - _3 Modifications: amended marking code (Fig. 1) _3 (9397 75 116) _2 (9397 75 8548) _N_1 (9397 75 8193) 2286 - _2 21119 - _N_1 2133 Preliminary specification - - Please be aware that important notices concerning this document and the product(s) described herein, have been included in section Legal information. NXP B.V. 27. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 29 August 27 Document identifier: _N_4 Rev. 4 29 August 27 1 of 1

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