QPA119 4.5 7. GHz 1 W GaN Power Amplifier Product Overview Qorvo s QPA119 is a packaged high-power, C-band amplifier fabricated on Qorvo s production.15 um GaN on SiC process (QGaN15). Covering 4.5 7. GHz, the QPA119 provides greater than 1 W of saturated output power and 19 db of large-signal gain while achieving greater than 39% power-added efficiency. The QPA119 is packaged in a plastic overmold QFN with a Cu paddle offering easy handling with good thermal properties. As a result, the QPA119 has bias flexibility allowing the user to vary the voltage to achieve optimum system performance while maintaining high reliability. The QPA119 is matched to 5 ohms with integrated DC blocking caps on both I/O ports. With the high performance, good thermal characteristics and ease of handling and system integration, the QPA119 is ideal for radar and satellite communication systems. Lead-free and RoHS compliant. Key Features Frequency Range: 4.5 7. GHz PSAT (PIN=22 dbm): > 4 dbm PAE (PIN=22 dbm): > 4 % Power Gain (PIN=22 dbm): > 19 db Integrated Power Detector Bias: VD = 22 V, IDQ = 29 ma, VG = 2.5 V typical Package Dimensions: 5. x 5. x.85 mm Performance is typical across frequency. Please reference electrical specification table and data plots for more details. Functional Block Diagram Applications C-Band Radar Satellite Communication RF In RF Out Ordering Information V DET Part No. QPA119 QPA119S2 QPA119TR7 QPA119EVB Description 4.5 7.GHz 1W GaN Power Amplifier Samples (2 pcs. pack) 25 pieces on a 7 reel (standard) Evaluation Board for QPA119 Data Sheet Rev. A, September 28, 218 1 of 21 www.qorvo.com
I G _Maximum (ma) Absolute Maximum Ratings Parameter Value / Range Drain Voltage (VD) 29.5 Gate Voltage Range (VG) Drain Current (ID1, ID2) Gate Current (IG) 6 to V.52, 2. A See chart Power Dissipation (PDISS), CW, 85 C 25.2 W Input Power (PIN), CW, 5 Ω, VD=22 V, IDQ=29 ma, 85 C 28 dbm Input Power (PIN), CW, 4:1 VSWR, VD=22 V, IDQ=29 ma, 85 C 25 dbm Channel Temperature (TCH) 275 C Mounting Temperature (3 seconds) 26 C Storage Temperature 55 to 15 C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. QPA119 4.5 7. GHz 1 W GaN Power Amplifier Recommended Operating Conditions Parameter Min Typ Max Units Drain Voltage (VD) +22 V Drain Current, Quiescent (IDQ) 29 ma Drain Current, RF (ID_Drive) See charts page 3-8 ma Gate Voltage Typ. Range (VG) 2 to -2.8 V Gate Current, RF (IG_Drive) See charts page 5-8 ma Operating Temp. Range 4 +25 +85 C Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. 5 4 3 25 2 15 1 5 Gate Current Maximum vs. T CH vs. Stage Total Stage 2 Stage 1 125 1 1 155 165 175 185 195 25 215 225 Channel Temperature ( C) Electrical Specifications Parameter Conditions (1) (2) Min Typ Max Units Operational Frequency Range 4.5 7. GHz Output Power at Saturation, PSAT PIN = +22 dbm 39 41 dbm Power Added Efficiency, PAE PIN = +22 dbm; Frequency = 4.5 5.5 GHz PIN = +22 dbm; Frequency = 6. 7. GHz 4 Small Signal Gain, S21 3 db Input Return Loss, IRL 15 db Output Return Loss, ORL 7 db 3 RD Intermodulation Products, IM3 POUT/TONE = +32 dbm; Frequency = 5.7 GHz 25 dbc PSAT Temperature Coefficient TDIFF = +25 C to +85 C; PIN = +22 dbm.7 dbm/ C S21 Temperature Coefficient TDIFF = 4 C to +85 C.5 db/ C Notes: 1. Test conditions unless otherwise noted: CW, V D = 22 V, I DQ = 29 ma, V G = -2.5V +/- typical, T BASE = +25 C, Z = 5 Ω 2. T BASE is back side of package % Data Sheet Rev. A, September 28, 218 2 of 21 www.qorvo.com
Drain Current (ma) Drain Current (ma) QPA119 4.5 7. GHz 1 W GaN Power Amplifier Performance Plots Large Signal Test conditions unless otherwise noted: CW VD = 22 V, IDQ = 29 ma, CW input power, T=+25 C 42. 41.5 Output Power vs. Freq. vs. Temp. CW, V D = 22 V, I DQ = 29 ma, P IN = 22 dbm 41. 4.5 4. 39.5 39. 38.5-4 C 25 C 85 C 38. 4. 4.5 5. 5.5 6. 6.5 7. 7.5 44 43 Output Power vs. Freq. vs. Input Power CW, V D = 22 V, I DQ = 29 ma, T = 25 C 42 41 4 39 38 37 36 34 33 1 dbm 16 dbm 22 dbm 24 dbm 32 4. 4.5 5. 5.5 6. 6.5 7. 7.5 55 Power Added Eff. vs. Freq. vs. Temp. CW, V D = 22 V, I DQ = 29 ma, P IN = 22 dbm 6 Power Added Eff. vs. Freq. vs. Input Power CW, V D = 22 V, I DQ = 29 ma, T = 25 C 5 5 4 3 4 2 1-4 C 25 C 85 C 3 4. 4.5 5. 5.5 6. 6.5 7. 7.5 1 dbm 16 dbm 22 dbm 24 dbm 4. 4.5 5. 5.5 6. 6.5 7. 7.5 18 16 Drain Current vs. Freq. vs. Temp. CW, V D = 22 V, I DQ = 29 ma, P IN = 22 dbm 18 16 Drain Current vs. Freq. vs. Input Power CW, V D = 22 V, I DQ = 29 ma, T = 25 C 14 14 12 12 1 1 8 8 6 6 4 4 2-4 C 25 C 85 C 4. 4.5 5. 5.5 6. 6.5 7. 7.5 2 12 dbm 16 dbm 22 dbm 24 dbm 4. 4.5 5. 5.5 6. 6.5 7. 7.5 Data Sheet Rev. A, September 28, 218 3 of 21 www.qorvo.com
Drain Current (ma) Drain Current (ma) QPA119 4.5 7. GHz 1 W GaN Power Amplifier Performance Plots Large Signal Test conditions unless otherwise noted: CW VD = 22 V, IDQ = 29 ma, CW input power, T=+25 C 42. 41.5 Output Power vs. Freq. vs. V D CW, P IN = 22 dbm, I DQ = 29 ma, T = 25 C 42. 41.5 Output Power vs. Freq. vs. I DQ CW, V D = 22 V, P IN = 22 dbm, T = 25 C 41. 41. 4.5 4.5 4. 4. 39.5 39.5 39. 39. 38.5 18 V 2 V 22 V 38. 4. 4.5 5. 5.5 6. 6.5 7. 7.5 38.5 1 ma 29 ma 58 ma 38. 4. 4.5 5. 5.5 6. 6.5 7. 7.5 55 Power Added Eff. vs. Freq. vs. V D CW, P IN = 22 dbm, I DQ = 29 ma, T = 25 C 55 Power Added Eff. vs. Freq. vs. I DQ CW, V D = 22 V, P IN = 22 dbm, T = 25 C 5 5 4 4 18 V 2 V 22 V 3 4. 4.5 5. 5.5 6. 6.5 7. 7.5 1 ma 29 ma 58 ma 3 4. 4.5 5. 5.5 6. 6.5 7. 7.5 18 16 Drain Current vs. Freq. vs. V D CW, P IN = 22 dbm, I DQ = 29 ma, T = 25 C 18 16 Drain Current vs. Freq. vs. I DQ CW, V D = 22 V, P IN = 22 dbm, T = 25 C 14 14 12 12 1 1 8 8 6 6 4 4 2 18 V 2 V 22 V 4. 4.5 5. 5.5 6. 6.5 7. 7.5 2 1 ma 29 ma 58 ma 4. 4.5 5. 5.5 6. 6.5 7. 7.5 Data Sheet Rev. A, September 28, 218 4 of 21 www.qorvo.com
Detector Volatge (V) Drain Currtent (ma) Gate Current (ma) QPA119 4.5 7. GHz 1 W GaN Power Amplifier Performance Plots Large Signal Test conditions unless otherwise noted: CW VD = 22 V, IDQ = 29 ma, CW input power, T=+25 C Output Power vs. P IN vs. Freq. 43 CW, V D = 22 V, I DQ = 29 ma, T = 25 C 41 39 37 33 31 29 27 4.5 GHz 5.75 GHz 7. GHz 25-2 2 4 6 8 1 12 14 16 18 2 22 24 Drain Current vs. P IN vs. Freq. 18 16 CW, V D = 22 V, I DQ = 29 ma, T = 25 C 14 12 1 8 6 4 2 4.5 GHz 5.75 GHz 7. GHz -2 2 4 6 8 1 12 14 16 18 2 22 24 1 9 8 Detector Voltage vs. P OUT vs. Freq. CW, V D = 22 V, I DQ = 29 ma, T = 25 C 4.5 GHz 5.75 GHz 7. GHz 7 6 5 4 3 2 1 24 26 28 3 32 34 36 38 4 42 Power Added Eff. vs. P IN vs. Freq. 6 CW, V D = 22 V, I DQ = 29 ma, T = 25 C 5 4 3 2 1 4.5 GHz 5.75 GHz 7. GHz -2 2 4 6 8 1 12 14 16 18 2 22 24 Gate Current vs. P IN vs. Freq. 1.6 CW, V D = 22 V, I DQ = 29 ma, T = 25 C 1.4 4.5 GHz 5.75 GHz 7. GHz 1.2 1.8.6.4.2 -.2-2 2 4 6 8 1 12 14 16 18 2 22 24 Data Sheet Rev. A, September 28, 218 5 of 21 www.qorvo.com
Detector Voltage (V) Drain Current (ma) Gate Current (ma) QPA119 4.5 7. GHz 1 W GaN Power Amplifier Performance Plots Large Signal Test conditions unless otherwise noted: CW VD = 22 V, IDQ = 29 ma, CW input power, T=+25 C 4 Output Power vs. P IN vs. Temp. CW, V D = 22 V, I DQ = 29 ma, Freq. = 5.75 GHz 6 5 Power Added Eff. vs. P IN vs. Temp. CW, V D = 22 V, I DQ = 29 ma, Freq. = 5.75 GHz 4 3 25 3 2 2 15 1 1-4 C +25 C +85 C -4 C +25 C +85 C -2 2 4 6 8 1 12 14 16 18 2 22 24-2 2 4 6 8 1 12 14 16 18 2 22 24 Drain Current vs. P IN vs. Temp. 16 CW, V D = 22 V, I DQ = 29 ma, Freq. = 5.75 GHz 14 12 1 8 6 4 2-4 C +25 C +85 C -2 2 4 6 8 1 12 14 16 18 2 22 24 1 9 8 Detector Voltage vs. P OUT vs. Temp. CW, V D = 22 V, I DQ = 29 ma, Freq. = 5.75 GHz -4 C +25 C +85 C 7 6 5 4 3 2 1 24 26 28 3 32 34 36 38 4 42 Gate Current vs. P IN vs. Temp. 1.8 1.6 CW, V D = 22 V, I DQ = 29 ma, Freq. = 5.75 GHz 1.4-4 C +25 C +85 C 1.2 1.8.6.4.2 -.2-2 2 4 6 8 1 12 14 16 18 2 22 24 Data Sheet Rev. A, September 28, 218 6 of 21 www.qorvo.com
Drain Current (ma) Gate Current (ma) QPA119 4.5 7. GHz 1 W GaN Power Amplifier Performance Plots Large Signal Test conditions unless otherwise noted: CW VD = 22 V, IDQ = 29 ma, CW input power, T=+25 C Output Power vs. P IN vs. V D 43 CW, I DQ = 29 ma, T = 25 C, Freq. = 5.75 GHz 41 39 37 33 31 29 27 18 V 2 V 22 V 25-2 2 4 6 8 1 12 14 16 18 2 22 24 Drain Current vs. P IN vs. V D 18 16 CW, I DQ = 29 ma, T = 25 C, Freq. = 5.75 GHz 14 12 1 8 6 4 2 18 V 2 V 22 V -2 2 4 6 8 1 12 14 16 18 2 22 24 Power Added Eff. vs. P IN vs. V D 6 CW, I DQ = 29 ma, T = 25 C, Freq. = 5.75 GHz 5 4 3 2 1 18 V 2 V 22 V -2 2 4 6 8 1 12 14 16 18 2 22 24 Gate Current. vs. P IN vs. V D 1.6 CW, I DQ = 29 ma, T = 25 C, Freq. = 5.75 GHz 1.4 18 V 2 V 22 V 1.2 1.8.6.4.2 -.2-2 2 4 6 8 1 12 14 16 18 2 22 24 Data Sheet Rev. A, September 28, 218 7 of 21 www.qorvo.com
Drain Current (ma) Gate Current (ma) QPA119 4.5 7. GHz 1 W GaN Power Amplifier Performance Plots Large Signal Test conditions unless otherwise noted: CW VD = 22 V, IDQ = 29 ma, CW input power, T=+25 C Output Power vs. P IN vs. I DQ 43 CW, V D = 22 V, T = 25 C, Freq. = 5.75 GHz 41 39 37 33 31 29 27 1 ma 29 ma 58 ma 25-2 2 4 6 8 1 12 14 16 18 2 22 24 Drain Current vs. P IN vs. I DQ 18 16 CW, V D = 22 V, T = 25 C, Freq. = 5.75 GHz 14 12 1 8 6 4 2 1 ma 29 ma 58 ma -2 2 4 6 8 1 12 14 16 18 2 22 24 Power Added Eff. vs. P IN vs. I DQ 6 CW, V D = 22 V, T = 25 C, Freq. = 5.75 GHz 5 4 3 2 1 1 ma 29 ma 58 ma -2 2 4 6 8 1 12 14 16 18 2 22 24 Gate Current. vs. P IN vs. I DQ 1.6 CW, V D = 22 V, T = 25 C, Freq. = 5.75 GHz 1.4 1 ma 29 ma 58 ma 1.2 1.8.6.4.2 -.2-2 2 4 6 8 1 12 14 16 18 2 22 24 Data Sheet Rev. A, September 28, 218 8 of 21 www.qorvo.com
Drain Current (ma) Drain Current (ma) QPA119 4.5 7. GHz 1 W GaN Power Amplifier Performance Plots Large Signal Test conditions unless otherwise noted: Pulsed VD = 22 V, IDQ = 29 ma, Duty Cycle = 1%, PW = 1 us, CW input power, T=+25 C 42. 41.5 Output Power vs. Freq. vs. Temp. Pulsed V D = 22 V, I DQ = 29 ma, P IN = 22 dbm 41. 4.5 4. 39.5 39. 38.5-4 C 25 C 85 C 38. 4. 4.5 5. 5.5 6. 6.5 7. 7.5 44 43 Output Power vs. Freq. vs. Input Power Pulsed V D = 22 V, I DQ = 29 ma, T = 25 C 42 41 4 39 38 37 36 34 33 1 dbm 16 dbm 22 dbm 24 dbm 32 4. 4.5 5. 5.5 6. 6.5 7. 7.5 55 Power Added Eff. vs. Freq. vs. Temp. Pulsed V D = 22 V, I DQ = 29 ma, P IN = 22 dbm 6 Power Added Eff. vs. Freq. vs. Input Power Pused V D = 22 V, I DQ = 29 ma, T = 25 C 5 5 4 3 4 2 1-4 C 25 C 85 C 3 4. 4.5 5. 5.5 6. 6.5 7. 7.5 1 dbm 16 dbm 22 dbm 24 dbm 4. 4.5 5. 5.5 6. 6.5 7. 7.5 18 16 Drain Current vs. Freq. vs. Temp. Pulsed V D = 22 V, I DQ = 29 ma, P IN = 22 dbm 14 12 1 8 6 4 2-4 C 25 C 85 C 4. 4.5 5. 5.5 6. 6.5 7. 7.5 18 16 Drain Current vs. Freq. vs. Input Power Pulsed V D = 22 V, I DQ = 29 ma, T = 25 C 14 12 1 8 6 4 2 12 dbm 16 dbm 22 dbm 24 dbm 4. 4.5 5. 5.5 6. 6.5 7. 7.5 Data Sheet Rev. A, September 28, 218 9 of 21 www.qorvo.com
Drain Current (ma) Drain Current (ma) QPA119 4.5 7. GHz 1 W GaN Power Amplifier Performance Plots Large Signal Test conditions unless otherwise noted: Pulsed VD = 22 V, IDQ = 29 ma, Duty Cycle = 1%, PW = 1 us CW input power, T=+25 C 42. 41.5 Output Power vs. Freq. vs. V D Pulsed P IN = 22 dbm, I DQ = 29 ma, T = 25 C 42. 41.5 Output Power vs. Freq. vs. I DQ Pulsed V D = 22 V, P IN = 22 dbm, T = 25 C 41. 4.5 4. 39.5 39. 38.5 41. 4.5 4. 39.5 39. 38. 18 V 2 V 22 V 37.5 4. 4.5 5. 5.5 6. 6.5 7. 7.5 38.5 1 ma 29 ma 58 ma 38. 4. 4.5 5. 5.5 6. 6.5 7. 7.5 55 Power Added Eff. vs. Freq. vs. V D Pulsed P IN = 22 dbm, I DQ = 29 ma, T = 25 C 55 Power Added Eff. vs. Freq. vs. I DQ Pulsed V D = 22 V, P IN = 22 dbm, T = 25 C 5 5 4 4 18 V 2 V 22 V 3 4. 4.5 5. 5.5 6. 6.5 7. 7.5 1 ma 29 ma 58 ma 3 4. 4.5 5. 5.5 6. 6.5 7. 7.5 18 16 Drain Current vs. Freq. vs. V D Pulsed P IN = 22 dbm, I DQ = 29 ma, T = 25 C 18 16 Drain Current vs. Freq. vs. I DQ Pulsed V D = 22 V, P IN = 22 dbm, T = 25 C 14 14 12 12 1 1 8 8 6 6 4 4 2 18 V 2 V 22 V 4. 4.5 5. 5.5 6. 6.5 7. 7.5 2 1 ma 29 ma 58 ma 4. 4.5 5. 5.5 6. 6.5 7. 7.5 Data Sheet Rev. A, September 28, 218 1 of 21 www.qorvo.com
IM3 (dbc) IM5 (dbc) IM3 (dbc) IM5 (dbc) IM3 (dbc) IM5 (dbc) QPA119 4.5 7. GHz 1 W GaN Power Amplifier Performance Plots Linearity Test conditions unless otherwise noted: CW VD = 22 V, IDQ = 29 ma, CW input power, T=+25 C, Freq. = 5.7 GHz, ΔF = 1 MHz IM3 vs. P OUT /Tone vs. Tempertaure IM5 vs. P OUT /Tone vs. Tempertaure -1-2 -1-2 -3-3 -4-4 -5-4C +25C +85C -6 2 22 24 26 28 3 32 34 36 38 Output Power / Tone (dbm) -5-6 -7-4C +25C +85C -8 2 22 24 26 28 3 32 34 36 38 Output Power / Tone (dbm) IM3 vs. P OUT /Tone vs. V D IM5 vs. P OUT /Tone vs. V D -1-2 -1-2 -3-3 -4-4 -5 18 V 2 V 22 V -6 2 22 24 26 28 3 32 34 36 38 Output Power / Tone (dbm) -5-6 -7 18 V 2 V 22 V -8 2 22 24 26 28 3 32 34 36 38 Output Power / Tone (dbm) IM3 vs. P OUT /Tone vs. I DQ IM5 vs. P OUT /Tone vs. I DQ -1-2 -1-2 -3-3 -4-4 -5 1 ma 29 ma -6 2 22 24 26 28 3 32 34 36 38 Output Power / Tone (dbm) -5-6 -7 1 ma 29 ma -8 2 25 3 Output Power / Tone (dbm) Data Sheet Rev. A, September 28, 218 11 of 21 www.qorvo.com
2nd Harmonic (dbc) 3rd Harmonic (dbc) 2nd Harmonic (dbc) 3rd Harmonic (dbc) 2nd Harmonic (dbc) 3rd Harmonic (dbc) QPA119 4.5 7. GHz 1 W GaN Power Amplifier Performance Plots Harmonics Test conditions unless otherwise noted: CW VD = 2 V, IDQ = 29 ma, CW input power, T=+25 C, Freq. = 5.7 GHz 2 ND Harmonic vs. P IN vs. Tempertaure 3 RD Harmonic vs. P IN vs. Tempertaure -1-2 -4C +25C +85C -1-2 -4C +25C +85C -3-3 -4-4 -5-5 -6-6 -7-5 5 1 15 2 25-7 -5 5 1 15 2 25 2 ND Harmonic vs. P IN vs. Frequency 3 RD Harmonic vs. P IN vs. Frequency -1-2 4.7 GHz 5.7 GHz 7. GHz -1-2 4.7 GHz 5.7 GHz 7. GHz -3-3 -4-4 -5-5 -6-6 -7-5 5 1 15 2 25-7 -5 5 1 15 2 25 2 ND Harmonic vs. P IN vs. I DQ 3 RD Harmonic vs. P IN vs. I DQ -1-2 1 ma 29 ma -1-2 1 ma 29 ma -3-3 -4-4 -5-5 -6-6 -7-5 5 1 15 2 25-7 -5 5 1 15 2 25 Data Sheet Rev. A, September 28, 218 12 of 21 www.qorvo.com
S21 (db) S11 (db) S21 (db) S11 (db) S21 (db) S11 (db) QPA119 4.5 7. GHz 1 W GaN Power Amplifier Performance Plots Small Signal Test conditions unless otherwise noted: CW VD = 22 V, IDQ = 29 ma, CW input power, T=+25 C 4 3 25 Gain vs. Frequency vs. Temp. -5-1 Input Return Loss vs. Freq. vs. Temp. -4C +25C +85C 2-15 15 1 5-4C +25C +85C 3. 3.5 4. 4.5 5. 5.5 6. 6.5 7. 7.5 8. -2-25 -3 3. 3.5 4. 4.5 5. 5.5 6. 6.5 7. 7.5 8. 4 3 25 Gain vs. Frequency vs. V DRAIN -5-1 Input Return Loss vs. Freq. vs. V DRAIN 18 V 2 V 22 V 2-15 15 1 5 18 V 2 V 22 V 3. 3.5 4. 4.5 5. 5.5 6. 6.5 7. 7.5 8. -2-25 -3 3. 3.5 4. 4.5 5. 5.5 6. 6.5 7. 7.5 8. 4 3 25 Gain vs. Frequency vs. I DRAIN_Q -5-1 Input Return Loss vs. Freq. vs. I DRAIN_Q 1 ma 29 ma 58 ma 2-15 15 1 5 1 ma 29 ma 58 ma 3. 3.5 4. 4.5 5. 5.5 6. 6.5 7. 7.5 8. -2-25 -3 3. 3.5 4. 4.5 5. 5.5 6. 6.5 7. 7.5 8. Data Sheet Rev. A, September 28, 218 13 of 21 www.qorvo.com
S22 (db) S22 (db) S22 (db) QPA119 4.5 7. GHz 1 W GaN Power Amplifier Performance Plots Small Signal Test conditions unless otherwise noted: CW VD = 22 V, IDQ = 29 ma, CW input power, T=+25 C Output Return Loss vs. Freq. vs. Temp. Output Return Loss vs. Freq. vs. V DRAIN -5-5 -1-1 -15-15 -2-2 -25-4C +25C +85C -3 3. 3.5 4. 4.5 5. 5.5 6. 6.5 7. 7.5 8. -25 18 V 2 V 22 V -3 3. 3.5 4. 4.5 5. 5.5 6. 6.5 7. 7.5 8. Output Return Loss vs. Freq. vs. I DRAIN_Q -5-1 -15-2 -25 1 ma 29 ma 58 ma -3 3. 3.5 4. 4.5 5. 5.5 6. 6.5 7. 7.5 8. Data Sheet Rev. A, September 28, 218 14 of 21 www.qorvo.com
Dissipated Power (Watts) Dissipated Power (Watts) QPA119 4.5 7. GHz 1 W GaN Power Amplifier Thermal and Reliability Information Parameter Test Conditions Value Units Thermal Resistance (θjc) (1) Tbase = 85 C 3.2 ºC/W Channel Temperature, TCH (Quiescent) (2) VD = 22 V, IDQ = 29 ma 15 C Median Lifetime (TM) PDISS = 6.38 W 6.5E+11 Hrs Thermal Resistance (θjc) (1) Tbase = 85 C, CW VD = 22 V, IDQ = 29 ma, Freq = 6.5 3.26 ºC/W Channel Temperature, TCH (Under RF) (2) GHz, ID_Drive = 1.38 A, PIN = 22 dbm, POUT = 41 dbm, 143 C Median Lifetime (TM) PDISS = 17.9 W 7.6E+8 Hrs Thermal Resistance (θjc) (1) Tbase = 85 C, Pulsed VD = 22 V, IDQ = 29 ma, Freq = 6.5 2.13 ºC/W Channel Temperature, TCH (Under RF) (2) GHz, ID_Drive = 1.38 A, PIN = 22 dbm, POUT = 41 dbm, 123 C Median Lifetime (TM) PDISS = 17.9 W 2.3E+1 Hrs Notes: 1. Thermal resistance determined to the back of package (85 C) 2. Channel temperature indicated is an IR scan equivalent temperature. Thermal resistance is calculated using this value. Additional information can be found in the Qorvo Applications Note GaN Device TCHMAX Theta-JC and Reliability Estimates, located here https://www.qorvo.com/products/d/da648 24 22 Dissipated Power vs. Frequency CW, I DQ = 29 ma, P IN = 22 dbm, T BASE = 85 C 2 18 16 14 12 1 8 6 18 V 2 V 22 V 4 4. 4.5 5. 5.5 6. 6.5 7. 7.5 24 22 2 18 16 14 12 1 8 Dissipated Power vs. Frequency Pulsed, I DQ = 29 ma, P IN = 22 dbm, T BASE = 85 C Duty Cycle = 1%, Pulse Width = 1us 6 18 V 2 V 22 V 4 4. 4.5 5. 5.5 6. 6.5 7. 7.5 Data Sheet Rev. A, September 28, 218 15 of 21 www.qorvo.com
QPA119 4.5 7. GHz 1 W GaN Power Amplifier Applications Circuit V D1 V G V D2 C1* R1* C3 R3 R5* C5* 1 uf Ω 1 uf Ω Ω 1 uf C2 R2 C4 R4 R6 C6.1uF 1 Ω.1uF 1 Ω 1 Ω.1uF 24 23 22 21 2 19 1 18 2 17 RF In 3 16 RF Out 4 15 5 14 6 13 7 8 9 1 11 12 V DET * Remove C1, C5, R1, R5 for pulsed drain operation Bias-Up Procedure Bias-Down Procedure 1. Set ID limit (CW) to 2 ma, IG limit to 2 ma 1. Turn off RF signal 2. Set VG to 5. V 2. Reduce VG to 5. V. Ensure IDQ ~ ma 4. Set VD +22 V 4. Set VD to V 5. Adjust VG more positive until IDQ 29 ma (VG ~ 2.5 V +/- Typical) 5. Turn off VD supply 6. Apply RF signal 6. Turn off VG supply Data Sheet Rev. A, September 28, 218 16 of 21 www.qorvo.com
QPA119 4.5 7. GHz 1 W GaN Power Amplifier Application Evaluation Board (CW) V D1 GND V G V D2 V D2 GND n/a GND n/a n/a V DET GND PCB Mounting Notes: 1. RF PCB is Rogers 43C; dielectric is 8 mil thick, copper cladding is ½ oz. copper both sides, plated to 1 oz 2. Copper Slug placed under the DUT to improve thermal and electrical performance Bill of Materials Reference Des. Value Description Manuf. Part Number C1, C3, C5 1 uf CAP, 1uF, 2%, 5V, 2%, X5R, 126 Various C2, C4, C6.1 uf CAP,.1uF, ±1%, 5V, X7R, 42 Various R1, R3 Ω RES, OHM, JMPR, 42 Various R2, R4, R6 1 Ω RES, 1 OHM, 5%,.1W, 42 Various R5 Ω RES, OHM, JMPR, 63 Various H1, H2 - Header, connector 2x6, SMD J1, J2 - Connector, Female, End Launch, 192-1A-5 Southwest Microwave 192-1A-5 S1 S7 Screw, Cap, socket head, 2-56x1/8 PCB - Rogers 43C, 8 mil dielectric, 1 oz. copper (gold plated), 2 layers Rogers Corp. Custom Carrier - T-Carrier, Copper C11, 1.744 x 2.21 x.275 Custom Solder - Paste, solder, syntech, Sn62/Pb36/Ag2 Epoxy - Preform Epoxy,.986 x 1.996 x.3t Data Sheet Rev. A, September 28, 218 17 of 21 www.qorvo.com
QPA119 4.5 7. GHz 1 W GaN Power Amplifier Mechanical Information 19 2 21 22 23 24 18 1 17 16 15 14 25 2 3 4 5 13 6 12 11 1 9 8 7 Notes: unless otherwise specified; 1. Dimensions: millimeters (mm) 2. Package leads are gold (Au) plated 3. Marking: YY is calendar year; WW is assembly week; MXXX is batch ID Pin Description Pin Number Symbol Description 1-2, 4-11, 13-15, 17-19, 23 NC No internal connection. Recommend grounding at the PCB level. 3 RF Input RF Input; matched to 5 Ω, DC blocked 12 VDET Output Power Detector Voltage 16 RF Output RF Output; matched to 5 Ω, DC blocked, DC grounded 2, 21 VD2 22 VG 24 VD1 25 GND Ground connection (center pad) Drain voltage for stage 2. Bias network is required; see Application Circuit on page 14 as an example. Gate voltage. Bias network is required; see Application Circuit on page 14 as an example. Drain voltage for stage 1. Bias network is required; see Application Circuit on page 14 as an example. Data Sheet Rev. A, September 28, 218 18 of 21 www.qorvo.com
QPA119 4.5 7. GHz 1 W GaN Power Amplifier Tape and reel Information Standard T/R size = 25 pieces on a 7 reel Dimensions: millimeters (mm) Tolerances unless otherwise noted:.x = ±.2;.XX = ±.1.3 Data Sheet Rev. A, September 28, 218 19 of 21 www.qorvo.com
QPA119 4.5 7. GHz 1 W GaN Power Amplifier Solderability Compatible with the latest version of J-STD-2, Lead-free solder, 26 C Do not expose the package lid to temperatures > 28 C Recommended Soldering Temperature Profile Data Sheet Rev. A, September 28, 218 2 of 21 www.qorvo.com
QPA119 4.5 7. GHz 1 W GaN Power Amplifier Handling Precautions Parameter Rating Standard ESD Human Body Model (HBM) 1C ANSI/ESD/JEDEC JS-1 ESD Charged Device Model (CDM) C3 ANSI/ESD/JEDEC JS-2 MSL Moisture Sensitivity Level 3 IPC/JEDEC J-STD-2 Caution! ESD-Sensitive Device RoHS Compliance This product is compliant with the 211/65/EU RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment), as amended by Directive 215/863/EU. This product also has the following attributes: Lead Free Halogen Free (Chlorine, Bromine) Antimony Free TBBP-A (C15H12Br42) Free PFOS Free SVHC Free Contact Information For the latest specifications, additional product information, worldwide sales and distribution locations: Web: www.qorvo.com Tel: 1-844-89-8163 Email: customer.support@qorvo.com Important Notice The information contained herein is believed to be reliable; however, Qorvo makes no warranties regarding the information contained herein and assumes no responsibility or liability whatsoever for the use of the information contained herein. All information contained herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for Qorvo products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. THIS INFORMATION DOES NOT CONSTITUTE A WARRANTY WITH RESPECT TO THE PRODUCTS DESCRIBED HEREIN, AND QORVO HEREBY DISCLAIMS ANY AND ALL WARRANTIES WITH RESPECT TO SUCH PRODUCTS WHETHER EXPRESS OR IMPLIED BY LAW, COURSE OF DEALING, COURSE OF PERFORMANCE, USAGE OF TRADE OR OTHERWISE, INCLUDING THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Without limiting the generality of the foregoing, Qorvo products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death. Copyright 218 Qorvo, Inc. Qorvo is a registered trademark of Qorvo, Inc. Data Sheet Rev. A, September 28, 218 21 of 21 www.qorvo.com