Features 2 Watt Saturated Output Power Level Variable Drain Voltage (6-V) Operation x mm Lead PQFN Package RoHS Compliant Description The MAAP-67-PKG3 is a 3-stage 2 W power amplifier with on-chip bias networks in a lead MLP package, allowing easy assembly. This product is fully matched to ohms on both the input and output. It can be used as a power amplifier stage or as a driver stage in high power applications. (PIN 1) RF IN (PIN ) YYWW AP67G XXX MACOM RF OUT Each device is % RF tested to ensure performance compliance. The part is fabricated using M/A-COM s GaAs Multifunction Self- Aligned Gate (MSAG) Process. The mm PQFN package has a lead-free lead finish that is RoHS compliant and compatible with a o C reflow temperature. The package also features low lead inductance and an excellent thermal path. The MTTF is >1,, hours at 17 o C. Primary Applications: Point-to-Point Radio SatCom Ordering Information Description Die Tape & Reel () Tape & Reel () Die Sample Board Plastic Pkg Sample Brd Part Number MAAPGM67-DIE MAAP-67-TR MAAP-67-TR MAAP-67-SMB4 MAAP-67-SMB3 Electrical Characteristics: T C = C 1, Z =Ω, V DD =8V, I DQ =6mA 2, P in =dbm, R G =1Ω Parameter Symbol Min Typical Max Units Bandwidth f.1 8. GHz Output Power P OUT 31. 33 dbm 1-dB Compression Point P1dB 33 dbm Small Signal Gain G. db Power Added Efficiency PAE % Input VSWR VSWR 1.7:1 Output VSWR VSWR 2.:1 Gate Supply Current I GG 7 ma Drain Supply Current, under RF Drive I DD 9 1 ma Output Third Order Intercept P OUT = dbm (SCL) Output Third Order Intermod, P OUT = dbm (SCL) TOI 41 dbm IM3 dbc 1 1. T C = Case Temperature 2. Adjust V GG between 2.7 and 1.2V to achieve specified I DQ. North America Tel: 8.6.26 / Fax: 978.6.26 Europe Tel:.198.74. / Fax:.198.74.
Maximum Ratings 3 Parameter Symbol Absolute Maximum Units Input Power P IN 17 dbm Drain Supply Voltage V DD +. V Gate Supply Voltage V GG -3. V Quiescent Drain Current (No RF) I DQ 1.2 A Quiescent DC Power Dissipated (No RF) P DISS.2 W Junction Temperature T J 17 C Storage Temperature T STG - to +1 C 3. Operation beyond these limits may result in permanent damage to the part. Exceeding any one or combination of these limits may cause permanent damage to this device. Recommended Operating Conditions 4 Characteristic Symbol Min Typ Max Unit Drain Supply Voltage V DD 6. 8.. V Gate Supply Voltage V GG -2.7-2. -1.2 V Input Power P IN.. dbm Thermal Resistance Θ JC.6 C/W Case Temperature T C Note C 4. Operation outside of these ranges may reduce product reliability.. Case Temperature = 17 C Θ JC * V DD * I DQ Power Derating Curve, Quiescent (No RF) Operating Instructions This device is static sensitive. Please handle with care. To operate the device, follow these steps. 1. Apply V GG = -2.7V, V DD = V. 2. Ramp V DD to desired voltage, typically 8. V. 3. Adjust V GG to set I DQ, (approximately @ 2. V). 4. Set RF input.. Power down sequence in reverse. Turn V GG off last. Peak Power Dissipation, Pdiss (W) 8 6 4 2 6 8 1 1 16 18 Maximum Case Temperature ( C) 2 North America Tel: 8.6.26 / Fax: 978.6.26 Europe Tel:.198.74. / Fax:.198.74.
6 6V 8V V 6V 8V V Small Signal Gain P1dB (dbm) Gain (db) 16 4 3 VSWR Output VSWR 8 2.. 6. 6. 7. 7. 8. 8. 9. Figure 1. 1dB Compression Point vs. Frequency and Drain Voltage at IDQ = 6mA 4 Input VSWR 1.. 6. 6. 7. 7. 8. 8. 9. Figure 2. Small Signal Gain and Input & Output VSWR vs. Frequency and Drain Voltage at IDQ = 6 ma 6V 8V V 4 6V 8V V PAE (%).. 6. 6. 7. 7. 8. 8. 9... 6. 6. 7. 7. 8. 8. 9. Figure 3. Saturated Output Power vs. Frequency and Drain Voltage at IDQ = 6mA Figure 4. Saturated Power Added Efficiency vs. Frequency and Drain Voltage at IDQ = 6mA 1. SSG POUT PAE IDS.9 -ºC ºC 9ºC SSG (db), POUT (dbm), & PAE (%).8.7.6..4.3.2 IDS (A).1.. 6. 6. 7. 7. 8. 8. 9.. - - - 4 6 7 8 9 Case Temperature (ºC) 3 Figure. Saturated Output Power vs Frequency and Case Temperature at Vd = 8V and IDQ = 6mA Figure 6. Small Signal Gain & Saturated Output Power, Power Added Efficiency, and Drain Current vs Case Temperature at 7GHz, VD = 8V and IDQ = 6mA North America Tel: 8.6.26 / Fax: 978.6.26 Europe Tel:.198.74. / Fax:.198.74.
VD = V VD = 8V VD = 6V 18 16 14 18 16 14 18 16 14 - -8-6 -4-2 2 4 6 8 Figure 7. Output Power vs. Input Power and Frequency at VD = 6V and IDQ = 6mA Figure 9. Output Power vs. Input Power and Frequency at VD = 8V and IDQ = 6mA - -8-6 -4-2 2 4 6 8 14 - -8-6 -4-2 2 4 6 8 14 16 Gain (db) Gain (db) Gain (db) 33 31 29 27 23 21 19 17 33 31 29 27 23 21 19 17 33 31 29 27 23 21 19 17 14 16 18 Figure 8. Gain vs. Output Power and Frequency at VD = 6V and IDQ = 6mA Figure. Gain vs. Output Power and Frequency at VD = 8V and IDQ = 6mA 14 16 18 14 16 18 4 Figure 11. Output Power vs. Input Power and Frequency at VD = V and IDQ = 6mA Figure. Gain vs. Output Power and Frequency at VD = V and IDQ = 6mA North America Tel: 8.6.26 / Fax: 978.6.26 Europe Tel:.198.74. / Fax:.198.74.
1. 4 1.4 1.3 1.2 VD = V VD = 8V VD = 6V PAE (%) PAE (%) PAE (%) 4 - -8-7 - -3-2 2 4 7 9 4 Figure 13. Power Added Efficiency vs. Input Power and Frequency at VD = 6V and IDQ = 6mA - -8-6 -4-3 -1 1 3 7 8 14 Figure. Power Added Efficiency vs. Input Power and Frequency at VD = 8V and IDQ = 6mA Drain Current (A) Drain Current (A) Drain Current (A) 1.1 1..9.8.7.6. 1. 1.4 1.3 1.2 1.1 1..9.8.7.6. 1. 1.4 1.3 1.2 1.1 1..9 - -8-6 -4-2 2 4 6 8 Figure 14. Drain Current vs. Input Power and Frequency at VD = 6V and IDQ = 6mA - -8-6 -4-2 2 4 6 8 14 Figure 16. Drain Current vs. Input Power and Frequency at VD = 8V and IDQ = 6mA.8.7.6 - -8-6 -4-2 2 4 6 8 14 16. - -8-6 -4-2 2 4 6 8 14 16 Figure 17. Power Added Efficiency vs. Input Power and Frequency at VD = V and IDQ = 6mA Figure 18. Darin Current vs. Input Power and Frequency at VD = V and IDQ = 6mA North America Tel: 8.6.26 / Fax: 978.6.26 Europe Tel:.198.74. / Fax:.198.74.
48 46 9 8 7 VD = V VD = 8V VD = 6V TOI (dbm) TOI (dbm) TOI (dbm) 48 46 48 46 8 14 16 18 Figure 19. Third Order Intercept vs. Output Power and Frequency at VD = 6V and IDQ = 6mA 8 14 16 18 Figure 21. Third Order Intercept vs. Output Power and Frequency at VD = 8V and IDQ = 6mA IM3 (dbc) IM3 (dbc) IM3 (dbc) 6 9 8 7 6 9 8 7 6 8 14 16 18 Figure. Third Order Intermod vs. Output Power and Frequency at VD = 6V and IDQ = 6mA 8 14 16 18 Figure. Third Order Intermod vs. Output Power and Frequency at VD = 8V and IDQ = 6mA x 8 14 16 18 8 14 16 18 6 Figure 23. Third Order Intercept vs. Output Power and Frequency at VD = V and IDQ = 6mA Figure. Third Order Intermod vs. Output Power and Frequency at VD = V and IDQ = 6mA North America Tel: 8.6.26 / Fax: 978.6.26 Europe Tel:.198.74. / Fax:.198.74.
6 48 46 6 GHZ 7 GHZ 8 GHZ 6 GHZ 7 GHZ 8 GHZ 4 TOI (dbm) IM3 (dbc) - - - 4 6 7 8 9 Case Temperature (ºC) Figure. Third Order Intercept vs. Temperature and Frequency at Single Carrier Output Power Level = 23 dbm, VD = 8V and IDQ = 6mA - - - 4 6 7 8 9 Case Temperature (ºC) Figure. Third Order Intermod vs. Temperature and Frequency at Single Carrier Output Power Level = 23 dbm, VD = 8V and IDQ = 6mA 7 North America Tel: 8.6.26 / Fax: 978.6.26 Europe Tel:.198.74. / Fax:.198.74.
o AP67G o Figure 27. x mm -Lead MLP. pf* pf*.1μf (PIN ) RF ports are internally dc blocked (PIN 1) RF IN YYWW AP67G XXX MACOM RF OUT 1 Ω. RG.1μF pf* pf* * Place pf capacitors as close to the package as possible. Figure. Recommended Bias Configuration. Note: The exposed pad centered on the package bottom must be connected to RF and dc ground for proper electrical and thermal operation. Reference M/A-COM application note S83 for information regarding solder profiles. Reference Figure for our suggested via hole pattern for power devices. *Application Notes can be found by going to http://www.macom.com/application%notes/default.asp and searching for the required Application Note.. 8 North America Tel: 8.6.26 / Fax: 978.6.26 Europe Tel:.198.74. / Fax:.198.74.
Figure 29. Demonstration Board PN MAAP-67-SMB3 (available upon request). o 9 Figure. PCB Land Design North America Tel: 8.6.26 / Fax: 978.6.26 Europe Tel:.198.74. / Fax:.198.74.