N-Channel 3 V (-S) MOSFET Si38EL PROUCT SUMMARY V S (V) R S(on) (Ω) MAX. I (A) c Q g (TYP.) 3.3 at V GS = V.5.44 at V GS = 4.5 V.4.85 at V GS =.5 V.3 SOT-33 SC-7 (3 leads).4 nc FEATURES TrenchFET power MOSFET % R g tested Typical ES performance 8 V Material categorization: for definitions of compliance please see www.vishay.com/doc?999 3 S APPLICATIONS Smart phones, tablet PC s - C/C converters - Boost converters - Load switch, OVP switch G G Top View Marking Code: KG Ordering Information: Si38EL-T-GE3 (Lead (Pb)-free and Halogen-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T A = 5 C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT rain-source Voltage V S 3 V Gate-Source Voltage V GS ± T C = 5 C.4 T C = 7 C. Continuous rain Current (T J = 5 C) I T A = 5 C.5 a, b T A = 7 C. a, b A Pulsed rain Current (t = 3 μs) I M 6 T C = 5 C.4 Continuous Source-rain iode Current I S T A = 5 C.3 T C = 5 C.5 T C = 7 C.3 Maximum Power issipation P W T A = 5 C.4 a, b T A = 7 C.3 a, b Operating Junction and Storage Temperature Range T J, T stg -55 to +5 C Soldering Recommendations (Peak Temperature) 6 THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum Junction-to-Ambient a, d t s R thja 5 3 C/W Maximum Junction-to-Foot (rain) Steady State R thjf 5 7 Notes a. Surface mounted on " x " FR4 board. b. t = s. c. Based on T C = 5 C. d. Maximum under steady state conditions is 36 C/W. S4-997-Rev. C, 6-Oct-4 ocument Number: 63399 ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
Si38EL SPECIFICATIONS (T J = 5 C, unless otherwise noted) PARAMETER SYMBOL TEST CONITIONS MIN. TYP. MAX. UNIT Static rain-source Breakdown Voltage V S V GS = V, I = 5 μa 3 - - V V S Temperature Coefficient ΔV S /T J - 3 - I = 5 μa V GS(th) Temperature Coefficient ΔV GS(th) /T J - -3 - mv/ C Gate-Source Threshold Voltage V GS(th) V S = V GS, I = 5 μa.6 -.5 V V S = V, V GS = 4.5 V - - Gate-Source Leakage I GSS V S = V, V GS = ± V - - ± V S = 3 V, V GS = V - - Zero Gate Voltage rain Current I SS V S = 3 V, V GS = V, T J = 55 C - - μa On-State rain Current a I (on) V S 5 V, V GS = V - - A rain-source On-State Resistance a R S(on) V GS = 4.5 V, I = A -..44 Ω V GS = V, I =.4 A -..3 V GS =.5 V, I =.5 A -.4.85 Forward Transconductance a g fs V S = V, I =.4 A - 5 - S ynamic b Input Capacitance C iss - 5 - Output Capacitance C oss V S = 5 V, V GS = V, f = MHz - 3 - pf Reverse Transfer Capacitance C rss - - V S = 5 V, V GS = V, I =.4 A -.7 4. Total Gate Charge Q g -.4. nc Gate-Source Charge Q gs V S = 5 V, V GS = 4.5 V, I =.4 A -.3 - Gate-rain Charge Q gd -.5 - Gate Resistance R g f = MHz.4 7 4 Ω Turn-On elay Time t d(on) - 4 Rise Time t r V = 5 V, RL = 3.6 Ω - 9 8 Turn-Off elay Time t d(off) I. A, V GEN = V, R g = Ω - 8 6 Fall Time t f - 8 6 Turn-On elay Time t d(on) - 8 6 ns Rise Time t r V = 5 V, RL = 3.6 Ω - 3 Turn-Off elay Time t d(off) I. A, V GEN = 4.5 V, R g = Ω - 5 3 Fall Time t f - 6 rain-source Body iode Characteristics Continuous Source-rain iode Current I S T C = 5 C - -.4 Pulse iode Forward Current a I SM - - 6 A Body iode Voltage V S I F =. A -.8. V Body iode Reverse Recovery Time t rr - 8 6 ns Body iode Reverse Recovery Charge Q rr - 3 6 nc I F =. A, di/dt = A/μs, T J = 5 C Reverse Recovery Fall Time t a - 5 - ns Reverse Recovery Rise Time t b - 3 - Notes a. Pulse test; pulse width 3 μs, duty cycle %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S4-997-Rev. C, 6-Oct-4 ocument Number: 63399 ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
Si38EL TYPICAL CHARACTERISTICS (5 C, unless otherwise noted).6.5 T J = 5 C -3-4 I GSS - Gate Current (ma).4.3.. I GSS - Gate Current (A) -5-6 -7-8 T J = 5 C T J = 5 C. 3 6 9 5 V GS - Gate-Source Voltage (V) Gate Source Voltage vs. Gate Current -9 5 5 V GS - Gate-to-Source Voltage (V) Gate Source Voltage vs. Gate Current 6. V GS = V thru 3 V I - rain Current (A) 4.5 3.5 V GS = V R S(on) -On-Resistance (Ω).7.4. V GS =.5 V V GS = 4.5 V V GS = V.5.5 V S -rain-to-source Voltage (V) Output Characteristics.8.5 3 4.5 6 I -rain Current (A) On-Resistance vs. rain Current I =.4 A I - rain Current (A).5.5 T C = 5 C T C = 5 C V GS - Gate-to-Source Voltage (V) 8 6 4 V S = 5 V V S = 8 V V S = 4 V T C = - 55 C.5.5 V GS - Gate-to-Source Voltage (V) Transfer Characteristics.7.4..8 Q g -Total Gate Charge (nc) Gate Charge S4-997-Rev. C, 6-Oct-4 3 ocument Number: 63399 ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
Si38EL TYPICAL CHARACTERISTICS (5 C, unless otherwise noted).65 I =.5 A R S(on) -On-Resistance (Normalized).4.5.9 V GS = V; 4.5 V I S - Source Current (A) T J = 5 C T J = 5 C.65-5 - 5 5 5 75 5 5 T J - Junction Temperature ( C) On-Resistance vs. Junction Temperature...3.6.9. V S - Source-to-rain Voltage (V) Source-rain iode Forward Voltage.5.3 I =.5 A I = 5 μa R S(on) -On-Resistance (Ω)..5. T J = 5 C T J = 5 C V GS(th) (V).5.85.7.5 4 6 8 V GS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage.55-5 - 5 5 5 75 5 5 T J -Temperature( C) Threshold Voltage Limited by R S(on) * 8 μs Power (W) 6 4 I - rain Current (A).. ms ms ms C, s, s... Time (s) Single Pulse Power, Junction-to-Ambient T A = 5 C BVSS Limited.. V S -rain-to-source Voltage (V) * V GS > minimum V GS at which R S(on) is specified Safe Operating Area, Junction-to-Ambient S4-997-Rev. C, 6-Oct-4 4 ocument Number: 63399 ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
Si38EL TYPICAL CHARACTERISTICS (5 C, unless otherwise noted).8.35 I - rain Current (A).9.45 5 5 75 5 5 T C -Case Temperature ( C) Current erating*.6.45.5.36 Power (W).4.3. Power (W).7.8..9. 5 5 75 5 5 T C - Case Temperature ( C). 5 5 75 5 5 T A - Ambient Temperature ( C) Power, Junction-to-Case Power, Junction-to-Ambient * The power dissipation P is based on T J (max.) = 5 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. S4-997-Rev. C, 6-Oct-4 5 ocument Number: 63399 ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
Si38EL TYPICAL CHARACTERISTICS (5 C, unless otherwise noted) uty Cycle =.5 Normalized Effective Transient Thermal Impedance....5. 3. T JM -T A =P M Z (t) thja Single Pulse 4. Surface Mounted. -4-3 - - Square Wave Pulse uration (s) Notes: Normalized Thermal Transient Impedance, Junction-to-Ambient P M t t t. uty Cycle, = t. Per Unit Base =R thja = 36 C/W Normalized Effective Transient Thermal Impedance. uty Cycle =.5...5. Single Pulse. -4-3 - - Square Wave Pulse uration (s) Normalized Thermal Transient Impedance, Junction-to-Foot maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?63399. S4-997-Rev. C, 6-Oct-4 6 ocument Number: 63399 ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
Package Information e.8 c 3 e b E A A E A c L im Min Nom Max Min Nom Max A.9..35.43 A..4 A.8..3.39 b.5.4..6 c..5.4..8...7.79.87 E.8..4.7.83.94 E.5.5.35.45.49.53 e.65bsc.6bsc e..3.4.47.5.55 L...3.4.8. 7 Nom 7 Nom ECN: S-3946 Rev. C, 9-Jul- WG: 5549 ocument Number: 753 6-Jul- www.vishay.com
AN83 Single-Channel LITTLE FOOT SC-7 3-Pin and 6-Pin MOSFET Recommended Pad Pattern and Thermal Peformance INTROUCTION This technical note discusses pin-outs, package outlines, pad patterns, evaluation board layout, and thermal performance for single-channel LITTLE FOOT power MOSFETs in the SC-7 package. These new devices are intended for small-signal applications where a miniaturized package is needed and low levels of current (around 35 ma) need to be switched, either directly or by using a level shift configuration. Vishay provides these single devices with a range of on-resistance specifications and in both traditional 3-pin and new 6-pin versions. The new 6-pin SC-7 package enables improved on-resistance values and enhanced thermal performance compared to the 3-pin package. PIN-OUT Figure shows the pin-out description and Pin identification for the single-channel SC-7 device in both 3-pin and 6-pin configurations. The pin-out of the 6-pin device allows the use of four pins as drain leads, which helps to reduce on-resistance and junction-to-ambient thermal resistance. G S SOT-33 SC-7 (3-LEAS) Top View 3 FIGURE. G SOT-363 SC-7 (6-LEAS) 3 Top View 6 5 4 BASIC PA PATTERNS See Application Note 86, Recommended Minimum Pad Patterns With Outline rawing Access for MOSFETs, (http://www.vishay.com/doc?786) for the basic pad layout and dimensions for the 3-pin SC-7 and the 6-pin SC-7. These pad patterns are sufficient for the low-power applications for which this package is intended. Increasing the pad pattern has little effect on thermal resistance for the 3-pin device, reducing it by only % to 5%. But for the 6-pin device, increasing the pad patterns yields a reduction in thermal resistance on the order of 35% when using a -inch square with full copper on both sides of the printed circuit board (PCB). The availability of four drain leads rather than the traditional single drain lead allows a better thermal path from the package to the PCB and external environment. EVALUATION BOARS FOR THE SINGLE SC7-3 AN SC7-6 Figure shows the 3-pin and 6-pin SC-7 evaluation boards (EVB). Both measure.6 inches by.5 inches. Their copper pad traces are the same as described in the previous section, Basic Pad Patterns. Both boards allow interrogation from the outer pins to 6-pin IP connections, permitting test sockets to be used in evaluation testing. The thermal performance of the single SC-7 has been measured on the EVB for both the 3-pin and 6-pin devices, the results shown in Figures 3 and 4. The minimum recommended footprint on the evaluation board was compared with the industry standard of -inch square FR4 PCB with copper on both sides of the board. For package dimensions see outline drawings: SC-7 (3-Leads) (http://www.vishay.com/doc?753) SC-7 (6-Leads) (http://www.vishay.com/doc?754) Front of Board SC7-3 ChipFET Back of Board, SC7-3 and SC7-6 Front of Board SC7-6 ChipFET vishay.com FIGURE. ocument Number: 736 -ec-3 www.vishay.com
AN83 THERMAL PERFORMANCE Junction-to-Foot Thermal Resistance (the Package Performance) Thermal performance for the 3-pin SC-7 measured as junction-to-foot thermal resistance is 85 C/W typical, 34 C/W maximum. Junction-to-foot thermal resistance for the 6-pin SC7-6 is 5 C/W typical, 3 C/W maximum a nearly two-thirds reduction compared with the 3-pin device. The foot is the drain lead of the device as it connects with the body. This improved performance is obtained by the increase in drain leads from one to four on the 6-pin SC-7. Note that these numbers are somewhat higher than other LITTLE FOOT devices due to the limited thermal performance of the Alloy 4 lead-frame compared with a standard copper lead-frame. Junction-to-Ambient Thermal Resistance (dependent on PCB size) The typical Rθ JA for the single 3-pin SC-7 is 36 C/W steady state, compared with 8 C/W for the 6-pin SC-7. Maximum ratings are 43 C/W for the 3-pin device versus C/W for the 6-pin device. All figures are based on the -inch square FR4 test board.the following table shows how the thermal resistance impacts power dissipation for the two different pin-outs at two different ambient temperatures. SC-7 (3-PIN) Room Ambient 5 C Elevated Ambient 6 C SC-7 (6-PIN) Room Ambient 5 C P T J(max) T A R JA P 5o C 5 o C 8 o C W P 694 mw Elevated Ambient 6 C P T J(max) T A R JA P 5o C 6 o C 8 o C W P 5 mw NOTE: Although they are intended for low-power applications, devices in the 6-pin SC-7 will handle power dissipation in excess of.5 W. Testing To aid comparison further, Figures 3 and 4 illustrate single-channel SC-7 thermal performance on two different board sizes and two different pad patterns. The results display the thermal performance out to steady state and produce a graphic account of the thermal performance variation between the two packages. The measured steady state values of Rθ JA for the single 3-pin and 6-pin SC-7 are as follows: LITTLE FOOT SC-7 ) Minimum recommended pad pattern (see Figure 4) on the EVB. ) Industry standard square PCB with maximum copper both sides. 3-Pin 4.3 C/W 36 C/W 6-Pin 39.7 C/W.8 C/W P T J(max) T A R JA P 5o C 5 o C 36 o C W P 347 mw P T J(max) T A R JA P 5o C 6 o C 36 o C W P 5 mw The results show that designers can reduce thermal resistance Rθ JA on the order of % simply by using the 6-pin device rather than the 3-pin device. In this example, a 8 C/W reduction was achieved without an increase in board area. If increasing board size is an option, a further 8 C/W reduction could be obtained by utilizing a -inch square PCB area. 4 4 3 3 Thermal Resistance (C/W) 4 6 8 3-pin 6-pin Thermal Resistance (C/W) 4 6 8 3-pin 6-pin.5 in x.6 in EVB -5-4 -3 - - Time (Secs) FIGURE 3. Comparison of SC7-3 and SC7-6 on EVB -5-4 -3 - - Time (Secs) Square FR4 PCB FIGURE 4. Comparison of SC7-3 and SC7-6 on Square FR4 PCB www.vishay.com ocument Number: 736 -ec-3
Application Note 86 RECOMMENE MINIMUM PAS FOR SC-7: 3-Lead.5 (.6). (.559).6 (.648).96 (.438).45 (.43).7 (.686).7 (.83) Recommended Minimum Pads imensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE ocument Number: 76 www.vishay.com Revision: -Jan-8 7
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