Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 2.0, 2-09-03 RF & Protection Devices
Edition 2-09-03 Published by Infineon Technologies AG 8726 Munich, Germany 3 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Revision History: 2-09-03, Version 2 Page Subjects (major changes since last revision) This data sheet replaces the revision from 08-07-04. The production processes have not been changed and the typical device properties remain the same. Only the product description has been expanded and the characteristic curves taken with another test setup. Trademarks of Infineon Technologies AG AURIX, C66, CanPAK, CIPOS, CIPURSE, EconoPACK, CoolMOS, CoolSET, CORECONTROL, CROSSAVE, DAVE, DI-POL, EasyPIM, EconoBRIDGE, EconoDUAL, EconoPIM, EconoPACK, EiceDRIVER, eupec, FCOS, HITFET, HybridPACK, I²RF, ISOFACE, IsoPACK, MIPAQ, ModSTACK, my-d, NovalithIC, OptiMOS, ORIGA, POWERCODE ; PRIMARION, PrimePACK, PrimeSTACK, PRO-SIL, PROFET, RASIC, ReverSave, SatRIC, SIEGET, SINDRION, SIPMOS, SmartLEWIS, SOLID FLASH, TEMPFET, thinq!, TRENCHSTOP, TriCore. Other Trademarks Advance Design System (ADS) of Agilent Technologies, AMBA, ARM, MULTI-ICE, KEIL, PRIMECELL, REALVIEW, THUMB, µvision of ARM Limited, UK. AUTOSAR is licensed by AUTOSAR development partnership. Bluetooth of Bluetooth SIG Inc. CAT-iq of DECT Forum. COLOSSUS, FirstGPS of Trimble Navigation Ltd. EMV of EMVCo, LLC (Visa Holdings Inc.). EPCOS of Epcos AG. FLEXGO of Microsoft Corporation. FlexRay is licensed by FlexRay Consortium. HYPERTERMINAL of Hilgraeve Incorporated. IEC of Commission Electrotechnique Internationale. IrDA of Infrared Data Association Corporation. ISO of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB of MathWorks, Inc. MAXIM of Maxim Integrated Products, Inc. MICROTEC, NUCLEUS of Mentor Graphics Corporation. MIPI of MIPI Alliance, Inc. MIPS of MIPS Technologies, Inc., USA. murata of MURATA MANUFACTURING CO., MICROWAVE OFFICE (MWO) of Applied Wave Research Inc., OmniVision of OmniVision Technologies, Inc. Openwave Openwave Systems Inc. RED HAT Red Hat, Inc. RFMD RF Micro Devices, Inc. SIRIUS of Sirius Satellite Radio Inc. SOLARIS of Sun Microsystems, Inc. SPANSION of Spansion LLC Ltd. Symbian of Symbian Software Limited. TAIYO YUDEN of Taiyo Yuden Co. TEAKLITE of CEVA, Inc. TEKTRONIX of Tektronix Inc. TOKO of TOKO KABUSHIKI KAISHA TA. UNIX of X/Open Company Limited. VERILOG, PALLADIUM of Cadence Design Systems, Inc. VLYNQ of Texas Instruments Incorporated. VXWORKS, WIND RIVER of WIND RIVER SYSTEMS, INC. ZETEX of Diodes Zetex Limited. Last Trademarks Update -- Data Sheet 3 Revision 2.0, 2-09-03
Table of Contents Table of Contents Table of Contents................................................................ 4 List of Figures................................................................... 5 List of Tables.................................................................... 6 Product Brief.................................................................... 7 2 Features........................................................................ 7 3 Applications.................................................................... 7 4 Pin Configuration................................................................ 8 5 Maximum Ratings................................................................ 9 6 Thermal Characteristics.......................................................... 0 7......................................................... 7. DC Characteristics............................................................... 7.2 General AC Characteristics........................................................ 7.3 Frequency Dependent AC Characteristics............................................. 2 7.4 Characteristic DC Diagrams........................................................ 6 7.5 Characteristic AC Diagrams........................................................ 9 8 Simulation Data................................................................. 26 9 Package Information TSLP-3-9.................................................... 27 Data Sheet 4 Revision 2.0, 2-09-03
List of Figures List of Figures Figure 6- Total Power Dissipation P tot = f (T S )................................................ 0 Figure 7- Testing Circuit................................................................. 2 Figure 7-2 Collector Current vs. Collector Emitter Voltage I C = f (V CE ), I B = Parameter in µa............. 6 Figure 7-3 DC Current Gain h FE = f (I C ), V CE = 3 V............................................. 6 Figure 7-4 Collector Current vs. Base Emitter Forward Voltage I C = f (V BE ), V CE = 2 V................. 7 Figure 7-5 Base Current vs. Base Emitter Forward Voltage I B = f (V BE ), V CE = 2 V.................... 7 Figure 7-6 Base Current vs. Base Emitter Reverse Voltage I B = f (V EB ), V CE = 2 V.................... 8 Figure 7-7 Transition Frequency f T = f (I C ), f = GHz, V CE = Parameter in V......................... 9 Figure 7-8 3rd Order Intercept Point at Output OIP 3 = f (I C ), Z S = Z L =50 Ω, V CE, f = Parameters......... 9 Figure 7-9 3rd Order Intercept Point at Output OIP 3 [m] = f (I C, V CE ), Z S = Z L = 50 Ω, f = 5.5 GHz...... Figure 7-0 Compression Point at Output OP [m] = f (I C, V CE ), Z S = Z L = 50 Ω, f = 5.5 GHz.......... Figure 7- Collector Base Capacitance C CB = f (V CB ), f = MHz.................................. 2 Figure 7-2 Gain G ma, G ms, S 2 2 = f (f), V CE = 3 V, I C = 3 ma..................................... 2 Figure 7-3 Maximum Power Gain G max = f (I C ), V CE, f= 3 V, f = Parameter in GHz..................... 22 Figure 7-4 Maximum Power Gain G max = f (V CE ), I C = 3 ma, f = Parameter in GHz................... 22 Figure 7-5 Input Matching S = f (f), V CE = 3 V, I C = 4 / 3 ma................................... 23 Figure 7-6 Source Impedance for Minimum Noise Figure Z opt = f (f), V CE = 3 V, I C = 4 / 3 ma........... 23 Figure 7-7 Output Matching S 22 = f (f), V CE = 3 V, I C = 4 / 3 ma.................................. 24 Figure 7-8 Noise Figure NF min = f (f), V CE = 3 V, I C = 4 / 3 ma, Z S = Z opt........................... 24 Figure 7-9 Noise Figure NF min = f (I C ), V CE = 3 V, Z S = Z opt, f = Parameter in GHz..................... 25 Figure 7- Noise Figure NF 50 = f (I C ), V CE = 3 V, Z S = 50 Ω, f = Parameter in GHz.................... 25 Figure 9- Package Outline of TSLP-3-9..................................................... 27 Figure 9-2 Footprint of TSLP-3-9........................................................... 27 Figure 9-3 Marking Layout of TSLP-3-9...................................................... 27 Figure 9-4 Tape of TSLP-3-9.............................................................. 27 Data Sheet 5 Revision 2.0, 2-09-03
List of Tables List of Tables Table 5- Maximum Ratings at T A = 25 C (unless otherwise specified)............................. 9 Table 6- Thermal Resistance............................................................ 0 Table 7- DC Characteristics at T A = 25 C................................................. Table 7-2 General AC Characteristics at T A = 25 C........................................... Table 7-3 AC Characteristics, V CE =3V, f = 50 MHz......................................... 2 Table 7-4 AC Characteristics, V CE =3V, f = 0.45 GHz......................................... 2 Table 7-5 AC Characteristics, V CE =3V, f = 0.9 GHz.......................................... 3 Table 7-6 AC Characteristics, V CE =3V, f =.5 GHz.......................................... 3 Table 7-7 AC Characteristics, V CE =3V, f =.9 GHz.......................................... 3 Table 7-8 AC Characteristics, V CE =3V, f = 2.4 GHz.......................................... 4 Table 7-9 AC Characteristics, V CE =3V, f = 3.5 GHz.......................................... 4 Table 7-0 AC Characteristics, V CE =3V, f = 5.5 GHz.......................................... 4 Table 7- AC Characteristics, V CE =3V, f = 0 GHz.......................................... 5 Table 7-2 AC Characteristics, V CE = 3 V, f = 2 GHz.......................................... 5 Data Sheet 6 Revision 2.0, 2-09-03
Product Brief Product Brief The BFR7L3RH is a very low noise wideband NPN RF transistor. The device is based on Infineon s reliable high volume silicon germanium carbon (SiGe:C) heterojunction bipolar technology. The BFR7L3RH provides a transition frequency f T of 43 GHz and is suited for low voltage applications (V CEO,max = 4 V) from VHF to 2 GHz. Due to its low power consumption the device is very energy efficient and well suited for mobile applications. The BFR7L3RH is housed in a very thin small leadless package ideal for modules. 2 Features Very low noise figure NF min = 0.45 at.9 GHz, 0.65 at 5.5 GHz, 3 V, 4 ma High power gain G ms = 2 at 5.5 GHz, 3 ma, 3 V Very thin small leadless package (height only 0.3 mm), hence ideal for modules with compact size and low profile height Pb-free (RoHS compliant) and halogen-free package Qualification report according to AEC-Q0 available TSLP-3-9 3 Applications As Low Noise Amplifier (LNA) in Mobile, portable and fixed connectivity applications: WLAN 802.a/b/g/n, WiMAX 2.5/3.5/5 GHz, UWB, Bluetooth Satellite communication systems: Navigation systems (GPS, Glonass), satellite radio (SDARs, DAB) and C-band LNB Multimedia applications such as mobile/portable TV, CATV, FM Radio 3G/4G UMTS/LTE mobile phone applications ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications As discrete active mixer, amplifier in VCOs and buffer amplifier Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions Data Sheet 7 Revision 2.0, 2-09-03
Pin Configuration 4 Pin Configuration Product Name Package Pin Configuration ) Marking BFR7L3RH TSLP-3-9 = B 2 = C 3 = E R3 ) See Package Information TSLP-3-9 on Page 27 Data Sheet 8 Revision 2.0, 2-09-03
Maximum Ratings 5 Maximum Ratings Table 5- Maximum Ratings at T A = 25 C (unless otherwise specified) Parameter Symbol Values Unit Note / Test Condition Min. Max. Collector emitter voltage V CEO Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. 4.0 3.5 V Open base T A = 25 C T A = -55 C Collector emitter voltage V CES 3 V E-B short circuited Collector base voltage V CBO 3 V Open emitter Emitter base voltage V EBO.2 V Open collector Collector current I C 30 ma Base current I B 3 ma Total power dissipation ) P tot mw T S 03 C Junction temperature T J 50 C Storage temperature T Stg -55 50 C ) T S is the soldering point temperature. T S is measured on the emitter lead at the soldering point of the pcb. Data Sheet 9 Revision 2.0, 2-09-03
Thermal Characteristics 6 Thermal Characteristics Table 6- Thermal Resistance Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Junction - soldering point ) R thjs 390 K/W )For the definition of R thjs please refer to Application Note AN077 (Thermal Resistance Calculation) 40 00 P tot [mw] 80 60 40 0 0 25 50 75 00 25 50 T S [ C] Figure 6- Total Power Dissipation P tot = f (T S ) Data Sheet 0 Revision 2.0, 2-09-03
7 7. DC Characteristics Table 7- DC Characteristics at T A = 25 C Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Collector emitter breakdown voltage V (BR)CEO 4 4.7 V I C =ma, I B =0 Open base Collector emitter leakage current I CES 7.2 General AC Characteristics 400 40 na V CE =3 V, V BE =0 V CE =5 V, V BE =0 E-B short circuited Collector base leakage current I CBO 40 na V CB =5V, I E =0 Open emitter Emitter base leakage current I EBO 40 na V EB =0.5V, I C =0 Open collector DC current gain h FE 60 250 400 V CE =3V, I C = 3 ma Pulse measured Table 7-2 General AC Characteristics at T A = 25 C Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Transition frequency f T 43 GHz V CE =3V, f =2 GHz Collector base capacitance C CB 0.07 0.0 pf V CB =3V, V BE =0 f =MHz Emitter grounded Collector emitter capacitance C CE 0.26 pf V CE =3V, V BE =0 f =MHz Base grounded Emitter base capacitance C EB 0.27 pf V EB =0.5V,V CB =0 f =MHz Collector grounded Data Sheet Revision 2.0, 2-09-03
7.3 Frequency Dependent AC Characteristics Measurement setup is a test fixture with Bias T s in a 50 Ω system, T A =25 C. 3 VB VC GND In Bias -T RF- In RF- Out Bias -T Out 2 TSLP-3-9 testing circuit Figure 7- Testing Circuit Table 7-3 AC Characteristics, V CE =3V, f = 50 MHz Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Power Gain Maximum power gain Transducer gain Minimum Noise Figure Minimum noise figure Associated gain Linearity compression point at output 3rd order intercept point at output G ms S 2 2 NF min G ass OP OIP 3 36.5 28 0.45 26.5 5.5 9.5 m Z S = Z L =50Ω Table 7-4 AC Characteristics, V CE =3V, f =0.45GHz Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Power Gain Maximum power gain Transducer gain Minimum Noise Figure Minimum noise figure Associated gain Linearity compression point at output 3rd order intercept point at output G ms S 2 2 NF min G ass OP OIP 3 3.5 28 0.45 25.5 5.5 9.5 m Z S = Z L =50Ω Data Sheet 2 Revision 2.0, 2-09-03
Table 7-5 AC Characteristics, V CE =3V, f =0.9GHz Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Power Gain Maximum power gain Transducer gain Minimum Noise Figure Minimum noise figure Associated gain Linearity compression point at output 3rd order intercept point at output G ms S 2 2 NF min G ass OP OIP 3 29 27 0.45 24.5 5.5 m Z S = Z L =50Ω Table 7-6 AC Characteristics, V CE =3V, f =.5GHz Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Power Gain Maximum power gain Transducer gain Minimum Noise Figure Minimum noise figure Associated gain Linearity compression point at output 3rd order intercept point at output G ms S 2 2 NF min G ass OP OIP 3 26.5 25.5 0.45 22.5 5.5 m Z S = Z L =50Ω Table 7-7 AC Characteristics, V CE =3V, f =.9GHz Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Power Gain Maximum power gain Transducer gain Minimum Noise Figure Minimum noise figure Associated gain Linearity compression point at output 3rd order intercept point at output G ms S 2 2 NF min G ass OP OIP 3 25.5 24 0.45 2.5 5.5.5 m Z S = Z L =50Ω Data Sheet 3 Revision 2.0, 2-09-03
Table 7-8 AC Characteristics, V CE =3V, f =2.4GHz Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Power Gain Maximum power gain Transducer gain Minimum Noise Figure Minimum noise figure Associated gain Linearity compression point at output 3rd order intercept point at output G ms S 2 2 NF min G ass OP OIP 3 24.5 23 0.5 6 2 m Z S = Z L =50Ω Table 7-9 AC Characteristics, V CE =3V, f =3.5GHz Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Power Gain Maximum power gain Transducer gain Minimum Noise Figure Minimum noise figure Associated gain Linearity compression point at output 3rd order intercept point at output G ms S 2 2 NF min G ass OP OIP 3 23 0.55 7 6.5 22.5 m Z S = Z L =50Ω Table 7-0 AC Characteristics, V CE =3V, f =5.5GHz Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Power Gain Maximum power gain Transducer gain Minimum Noise Figure Minimum noise figure Associated gain Linearity compression point at output 3rd order intercept point at output G ms S 2 2 NF min G ass OP OIP 3 2 6.5 0.65 3.5 7.5 23 m Z S = Z L =50Ω Data Sheet 4 Revision 2.0, 2-09-03
Table 7- AC Characteristics, V CE =3V, f =0GHz Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Power Gain Maximum power gain Transducer gain Minimum Noise Figure Minimum noise figure Associated gain Linearity compression point at output 3rd order intercept point at output G ma S 2 2 NF min G ass OP OIP3 4.5 8.5 7.5 22.5 m Z S = Z L =50Ω Table 7-2 AC Characteristics, V CE = 3 V, f = 2 GHz Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Power Gain Maximum power gain Transducer gain Minimum Noise Figure Minimum noise figure Associated gain Linearity compression point at output 3rd order intercept point at output G ma S 2 2 NF min G ass OP OIP 3 Note: OIP 3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 Ω from 0.2 MHz to 2 GHz. 2 9. 8 6.5 8.5 m Z S = Z L =50Ω Data Sheet 5 Revision 2.0, 2-09-03
7.4 Characteristic DC Diagrams I C [ma] 8 6 4 2 0 8 6 4 2 80µA 70µA 60µA 50µA 40µA 30µA µa 0µA 0 0 0.5.5 2 2.5 3 3.5 4 4.5 V CE [V] Figure 7-2 Collector Current vs. Collector Emitter Voltage I C = f (V CE ), I B = Parameter in µa 0 3 h FE 0 2 0 4 0 3 0 2 0 I [A] C Figure 7-3 DC Current Gain h FE = f (I C ), V CE =3V Data Sheet 6 Revision 2.0, 2-09-03
0 0 2 0 3 I C [A] 0 4 0 5 0 6 0 7 0.5 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9 V BE [V] Figure 7-4 Collector Current vs. Base Emitter Forward Voltage I C = f (V BE ), V CE =2V 0 3 0 4 0 5 I B [A] 0 6 0 7 0 8 0 9 0 0 0.5 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9 V [V] BE Figure 7-5 Base Current vs. Base Emitter Forward Voltage I B = f (V BE ), V CE =2V Data Sheet 7 Revision 2.0, 2-09-03
0 6 0 7 0 8 I B [A] 0 9 0 0 0.5 2 2.5 3 V EB [V] Figure 7-6 Base Current vs. Base Emitter Reverse Voltage I B = f (V EB ), V CE =2V Data Sheet 8 Revision 2.0, 2-09-03
7.5 Characteristic AC Diagrams Measurement setup is a test fixture with Bias-T s in a 50 Ω system, T A =25 C. 45 40 35 30 f T [GHz] 25 5 4.00V 3.00V 0 5 2.00V.00V 0 0 5 0 5 25 30 35 I [ma] C Figure 7-7 Transition Frequency f T = f (I C ), f = GHz, V CE = Parameter in V 24 22 8 OIP 3 [m] 6 4 2 0 8 6 2V, 2400MHz 3V, 2400MHz 2V, 5500MHz 3V, 5500MHz 4 0 5 0 5 25 I C [ma] Figure 7-8 3rd Order Intercept Point at Output OIP 3 = f (I C ), Z S = Z L = 50 Ω, V CE, f = Parameters Data Sheet 9 Revision 2.0, 2-09-03
3 7 BFR7L3RH 22 0 2 4 5 6 7 8 9 0 2 3 4 7 8 9 2 23 22 24 8 6 5 6 7 8 9 0 2 3 4 5 6 7 8 9 2 22 23 I C [ma] 4 2 2 5 6 7 8 9 24 0 3 4 2 22 23 8 6 5 6 7 8 9 2 4.5 2 2.5 3 3.5 4 V CE [V] 22 2 Figure 7-9 3rd Order Intercept Point at Output OIP 3 [m] = f (I C, V CE ), Z S = Z L = 50 Ω, f = 5.5 GHz 22 8 3 4 5 2 6 5 7 7 8 8 9 6 9 I C [ma] 4 2 0 8 6 6 6 5 4 3 2 0 6 5 4 3 2 0 8 8 7 7 6 6 5 4 3 3 2 0 4 2 2.5 3 3.5 4 V [V] CE Figure 7-0 Compression Point at Output OP [m] = f (I C, V CE ), Z S = Z L = 50 Ω, f = 5.5 GHz Data Sheet Revision 2.0, 2-09-03
0.2 0. 0. 0.09 C CB [pf] 0.08 0.07 0.06 0.05 0.04 0 0.5.5 2 2.5 3 3.5 4 V [V] CB Figure 7- Collector Base Capacitance C CB = f (V CB ), f = MHz 40 35 30 G [] 25 5 G ms S 2 2 G ma 0 5 0 2 3 4 5 6 7 8 9 0 2 f [GHz] Figure 7-2 Gain G ma, G ms, S 2 2 = f (f), V CE = 3 V, I C = 3 ma Data Sheet 2 Revision 2.0, 2-09-03
40 G [] 35 30 25 5 0.5GHz 0.45GHz 0.90GHz.50GHz.90GHz 2.40GHz 3.50GHz 5.50GHz 0 0.00GHz 2.00GHz 5 0 5 0 5 25 30 35 40 I [ma] C Figure 7-3 Maximum Power Gain G max = f (I C ), V CE, f= 3 V, f = Parameter in GHz 40 G [] 35 30 25 0.5GHz 0.45GHz 0.90GHz.50GHz.90GHz 2.40GHz 3.50GHz 5.50GHz 5 0 0.00GHz 2.00GHz 5 0.5.5 2 2.5 3 3.5 4 4.5 5 V [V] CE Figure 7-4 Maximum Power Gain G max = f (V CE ), I C = 3 ma, f = Parameter in GHz Data Sheet 22 Revision 2.0, 2-09-03
.5 0.5 2 0.4 0.3 0.2 2.0 3 4 5 0. 0.0 8.0 2.0 0.5 to 2 GHz 0 0 0. 0. 0.2 0.0 0.3 0.4 0.5.5 2 3 4 5 6.0 9.0 8.0 7.0 5.0 4.0 0.5 0.5 0 0.2 0.3 0.4 6.0 5.0 3.0 4.0 2.0.0 5.0 4 3 0.5 3.0 2.0.5 2 4.0mA 3mA Figure 7-5 Input Matching S = f (f), V CE = 3 V, I C = 4 / 3 ma.5 0.5 2 0. 0 0.2 0.3 0.4 0.0 8.0 2.4 2.0 8.0 5.5 3.5.9 0.0 2.4.5.9.5 0.9 0. 0.2 2.0 0.3 0.4 0.5.5 0.9 2 3 4 5 5.5 3.5 3 4 5 0 0. 0 0.2 0.3 0.4 3 4 5 0.5.5 2 4mA 3mA Figure 7-6 Source Impedance for Minimum Noise Figure Z opt = f (f), V CE = 3 V, I C = 4 / 3 ma Data Sheet 23 Revision 2.0, 2-09-03
.5 0.5 2 0.4 0.3 3 4 0.2 5 0. 0.5 to 2 GHz 0 0 0. 0.2 0. 0.2 0.3 0.4 0.5.5 2 3 4 5 2.0 0.3 0.4 2.0 0.0 8.0 0.0 8.0 6.0 5.0 4.0 6.0 5.0 3.0 4.0 2.0 3.0.0 2.0 0.5 0.5 0.0 5 4 3 0.5.5 2 4.0mA 3mA Figure 7-7 Output Matching S 22 = f (f), V CE = 3 V, I C = 4 / 3 ma 2.8.6.4 NF min [].2 0.8 0.6 0.4 0.2 I C = 3.0mA I C = 4.00mA 0 0 2 4 6 8 0 2 f [GHz] Figure 7-8 Noise Figure NF min = f (f), V CE = 3 V, I C = 4 / 3 ma, Z S = Z opt Data Sheet 24 Revision 2.0, 2-09-03
2.8.6.4 NF min [].2 0.8 f = 2GHz 0.6 f = 0GHz f = 5.5GHz 0.4 f = 3.5GHz 0.2 f = 2.4GHz f = 0.9GHz 0 0 5 0 5 I C [ma] Figure 7-9 Noise Figure NF min = f (I C ), V CE = 3 V, Z S = Z opt, f = Parameter in GHz 3 2.5 2 f = 2GHz f = 0GHz f = 5.5GHz f = 3.5GHz f = 2.4GHz f = 0.9GHz NF50 [].5 0.5 0 0 5 0 5 I [ma] C Figure 7- Noise Figure NF 50 = f (I C ), V CE = 3 V, Z S = 50 Ω, f = Parameter in GHz Note: The curves shown in this chapter have been generated using typical devices but shall not be considered as a guarantee that all devices have identical characteristic curves. Data Sheet 25 Revision 2.0, 2-09-03
Simulation Data 8 Simulation Data For the SPICE Gummel Poon (GP) model as well as for the S-parameters (including noise parameters) please refer to our internet website: www.infineon.com/rf.models. Please consult our website and download the latest versions before actually starting your design. You find the BFR7L3RH SPICE GP model in the internet in MWO- and ADS-format, which you can import into these circuit simulation tools very quickly and conveniently. The model already contains the package parasitics and is ready to use for DC- and high frequency simulations. The terminals of the model circuit correspond to the pin configuration of the device. The model parameters have been extracted and verified up to 0 GHz using typical devices. The BFR7L3RH SPICE GP model reflects the typical DC- and RF-performance within the limitations which are given by the SPICE GP model itself. Besides the DC characteristics all S-parameters in magnitude and phase, as well as noise figure (including optimum source impedance, equivalent noise resistance and flicker noise) and intermodulation have been extracted. Data Sheet 26 Revision 2.0, 2-09-03
Package Information TSLP-3-9 9 Package Information TSLP-3-9 Top view Bottom view +0.0 0.3-0.02 ) 0.5 ±0.035 0.6 ±0.05 ) 0.4 ±0.035 ±0.05 0.575 3 2 ±0.05 Pin marking 0.35 ±0.05 ) 2x0.5 ±0.035 ) 2x0.25 ±0.035 ) Dimension applies to plated terminal TSLP-3-9-PO V0 Figure 9- Package Outline of TSLP-3-9 0.6 0.45 0.2 R0.9 0.95 0.5 0.38 0.255 0.35 0.225 0.5 0.35 0.225 0.2 0.2 0.7 R0. Copper Solder mask Stencil apertures TSLP-3-9-FP V0 Figure 9-2 Footprint of TSLP-3-9 Pin marking Laser marking XY Type Code TSLP-3-9_marking V0.vsd Figure 9-3 Marking Layout of TSLP-3-9 4 0.35.2 8 Pin marking 0.8 TSLP-3-9-TP V02 Figure 9-4 Tape of TSLP-3-9 Data Sheet 27 Revision 2.0, 2-09-03
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