GaAs MMIC High Dynamic Range Mixer. Description Package Green Status

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GaAs MMIC High Dynamic Range Mixer MT3L-0113H 1. Device Overview 1.1 General Description MT3L-0113H is a GaAs MMIC triple balanced mixer with high dynamic range and low conversion loss. This mixer belongs to the T3 family which offers high IP3, P 1dB, and broad operating bandwidths for applications in the S, C and X bands. MT3L- 0113H is the monolithic cousin of the MT3-0113HCQG and sister of the MT3H-0113HCH targeted towards lower IF applications in a small footprint. The MT3L-0113H is available as both wire bondable die and a connectorized module. Die Module 1.2 Features Low IF band Broad, overlapping RF/LO & IF bands High >+30 dbm IP3 1.3 Applications Test and measurement equipment S/C/X band radar 1.4 Functional Block Diagram 1.5 Part Ordering Options 1 Part Number Description Package Green Status Product Lifecycle Export Classification MT3L-0113HCH-2 Wire bondable die CH MT3L-0113HS Connectorized module RoHS Active EAR99 S Active EAR99 1 Refer to our website for a list of definitions for terminology presented in this table. Copyright 2019 Marki Microwave, Inc. P a g e 1 R e v. -

Table of Contents 1. Device Overview... 1 1.1 General Description... 1 1.2 Features... 1 1.3 Applications... 1 1.4 Functional Block Diagram... 1 1.5 Part Ordering Options... 1 2. Port Configurations and Functions... 3 2.1 Port Diagram... 3 2.2 Port Functions... 3 3. Specifications... 4 3.1 Absolute Maximum Ratings... 4 3.2 Package Information... 4 3.3 Recommended Operating Conditions. 4 3.4 Sequencing Requirements... 4 3.5 Electrical Specifications... 5 3.6 Typical Performance Plots... 6 3.6.1 Typical Performance Plots: IP3, Sine Wave LO... 8 3.6.1 Typical Performance Plots: IP3, Square Wave LO... 9 3.6.2 Typical Performance Plots: LO Harmonic Isolation... 10 3.6.3 Typical Spurious Performance: Down-Conversion... 11 3.6.4 Typical Spurious Performance: Up- Conversion... 12 4. Die Mounting Recommendations... 13 4.1 Mounting and Bonding Recommendations... 13 4.2 Handling Precautions... 13 4.3 Bonding Diagram... 14 5. Mechanical Data... 15 5.1 CH Package Outline Drawing... 15 5.2 S Package Outline Drawing... 15 Revision History Revision Code Revision Date Comment - January 2019 Datasheet Initial Release Copyright 2019 Marki Microwave, Inc. P a g e 2 R e v. -

2. Port Configurations and Functions www.markimicrowave.com MT3L-0113H 2.1 Port Diagram A top-down view of the MT3L-0113H s CH package outline drawing is shown below. The MT3L-0113H has the input and output ports given in Port Functions. The MT3L-0113H can be used in either an up or down conversion. For configuration A, input the LO into port 1, use port 3 for the RF, and port 2 for the IF. For configuration B, input the LO into port 3, use port 1 for the RF, and port 2 for the IF. 2.2 Port Functions Port Function Description Port 1 LO (Configuration A) RF (Configuration B) Port 1 is DC short for the CH and S packages. Equivalent Circuit for Package Port 2 IF Port 2 is DC openfor the CH and S package. Port 3 GND RF (Configuration A) LO (Configuration B) Ground Port 3 is DC short for the CH and S packages. CH package ground path is provided through the substrate and ground bond pads. S package ground provided through metal housing and outer coax conductor. Copyright 2019 Marki Microwave, Inc. P a g e 3 R e v. -

3. Specifications 3.1 Absolute Maximum Ratings The Absolute Maximum Ratings indicate limits beyond which damage may occur to the device. If these limits are exceeded, the device may be inoperable or have a reduced lifetime. Parameter Maximum Rating Units Port 1 DC Current 150 ma Port 2 DC Current 150 ma Power Handling, at any Port +33 dbm Operating Temperature -55 to +100 C Storage Temperature -65 to +125 ºC 3.2 Package Information Parameter Details Rating ESD Human Body Model (HBM), per MIL-STD-750, Method 1020 1 A Weight S Package 10 g 3.3 Recommended Operating Conditions The Recommended Operating Conditions indicate the limits, inside which the device should be operated, to guarantee the performance given in Electrical Specifications Operating outside these limits may not necessarily cause damage to the device, but the performance may degrade outside the limits of the electrical specifications. For limits, above which damage may occur, see Absolute Maximum Ratings. Min Nominal Max Units T A, Ambient Temperature -55 +25 +100 C LO Input Power +15 +25 dbm 3.4 Sequencing Requirements There is no requirement to apply power to the ports in a specific order. However, it is recommended to provide a 50Ω termination to each port before applying power. This is a passive diode mixer that requires no DC bias. Copyright 2019 Marki Microwave, Inc. P a g e 4 R e v. -

3.5 Electrical Specifications The electrical specifications apply at T A=+25 C in a 50Ω system. Typical data shown is for the connectorized S package mixer used with a +20 dbm sine wave LO. Specifications shown for configuration A (B). Min and Max limits apply only to our connectorized units and are guaranteed at TA=+25 C. All bare die are 100% DC tested and visually inspected. Parameter Test Conditions Min Typical Max Units RF (Port 3) Frequency Range 1.5 13 LO (Port 1) Frequency Range 1.5 13 GHz I (Port 2) Frequency Range 0.25 5 Conversion Loss (CL) 2 Noise Figure (NF) 3 RF/LO = 1.5-13 GHz I = 0.75 GHz RF/LO = 1.5-13 GHz I = 0.25-0.75 GHz RF/LO = 1.5-13 GHz I = 0.75-5 GHz RF/LO = 1.5-13 GHz I = 0.75 GHz 8.5 (10) 10.5 (11) 9.5 (11) LO to RF RF/LO = 1.5-13 GHz 43 11.5 (13) db 8.5 db Isolation LO to IF IF/LO = 1.5-13 GHz 41 db Input IP3 (IIP3) 4 Input 1 db Gain Compression Point (P1dB) 5 RF to IF RF/IF = 1.5-13 GHz 39 RF/LO = 1.5-13 GHz I = 0.75 GHz +31 (+31) +20 (+20) dbm dbm 2 Measured as a down converter to a fixed 750 MHz IF. Unless otherwise stated, frequency conversion done using a highside LO. 3 Mixer Noise Figure typically measures within 0.5 db of conversion loss for IF frequencies greater than 5 MHz. 4 IP3 depends on LO drive condition. Reported table value is measured with a square wave LO formed using 2x ADM1-0026PA in series with +10 dbm input into the first stage. LO Power reported in plots is of the fundamental tone only. Square wave LO power in plots is stepped down using broadband DC-40 GHz attenuators. 5 P1dB is measured using a +23 dbm square wave LO. Copyright 2019 Marki Microwave, Inc. P a g e 5 R e v. -

3.6 Typical Performance Plots Copyright 2019 Marki Microwave, Inc. P a g e 6 R e v. -

Copyright 2019 Marki Microwave, Inc. P a g e 7 R e v. -

3.6.1 Typical Performance Plots: IP3, Sine Wave LO Copyright 2019 Marki Microwave, Inc. P a g e 8 R e v. -

3.6.1 Typical Performance Plots: IP3, Square Wave LO Copyright 2019 Marki Microwave, Inc. P a g e 9 R e v. -

3.6.2 Typical Performance Plots: LO Harmonic Isolation Copyright 2019 Marki Microwave, Inc. P a g e 10 R e v. -

3.6.3 Typical Spurious Performance: Down-Conversion Typical spurious data is provided by selecting RF and LO frequencies (± m*lo ± n*rf) within the RF/LO bands, to create a spurious output within the IF band. The mixer is swept across the full spurious band and the mean is calculated. The numbers shown in the table below are for a -10 dbm RF input. Spurious suppression is scaled for different RF power levels by (n-1), where n is the RF spur order. For example, the 2RF x 2LO spur is 63 dbc for a -10 dbm input, so a -20 dbm RF input creates a spur that is (2-1) x (-10 db) lower, or 73 dbc. Typical Down-conversion spurious suppression (dbc): Config A (B), Sine Wave LO -10 dbm RF Input 0xLO 1xLO 2xLO 3xLO 4xLO 5xLO 1xRF 30 (35) Reference 42 (41) 18 (18) 35 (41) 21 (23) 2xRF 62 (62) 67 (66) 63 (66) 68 (63) 56 (58) 69 (64) 3xRF 111 (110) 82 (87) 98 (102) 80 (81) 101 (100) 138 (138) 4xRF 129 (128) 145 (145) 124 (127) 128 (129) 123 (123) 131 (129) 5xRF 165 (172) 147 (154) 159 (161) 148 (149) 159 (161) 145 (145) Typical Down-conversion spurious suppression (dbc): Config A (B), Square Wave LO -10 dbm RF Input 0xLO 1xLO 2xLO 3xLO 4xLO 5xLO 1xRF 29 (35) Reference 37 (39) 13 (13) 37 (37) 18 (19) 2xRF 69 (62) 68 (69) 69 (70) 73 (71) 61 (64) 70 (73) 3xRF 109 (114) 94 (94) 106 (110) 91 (91) 107 (110) 137 (138) 4xRF 137 (141) 145 (145) 133 (137) 140 (140) 133 (137) 138 (137) 5xRF 173 (174) 158 (163) 167 (170) 162 (163) 171 (167) 161 (162) Copyright 2019 Marki Microwave, Inc. P a g e 11 R e v. -

3.6.4 Typical Spurious Performance: Up-Conversion Typical spurious data is taken by mixing an input within the IF band, with LO frequencies (± m*lo ± n*if), to create a spurious output within the RF output band. The mixer is swept across the full spurious output band and the mean is calculated. The numbers shown in the table below are for a -10 dbm IF input. Spurious suppression is scaled for different IF input power levels by (n-1), where n is the IF spur order. For example, the 2IFx1LO spur is typically 64 dbc for a - 10 dbm input with a sine-wave LO, so a -20 dbm IF input creates a spur that is (2-1) x (-10 db) lower, or 74 dbc. Typical Up-conversion spurious suppression (dbc): Config A (B), Sine Wave LO -10 dbm RF Input 0xLO 1xLO 2xLO 3xLO 4xLO 5xLO 1xIF 23 (30) Reference 42 (41) 19 (17) 39 (43) 22 (21) 2xIF 71 (63) 64 (67) 60 (57) 57 (59) 63 (59) 52 (57) 3xIF 102 (101) 85 (85) 100 (99) 85 (81) 94 (100) 81 (79) 4xIF 135 (131) 127 (128) 127 (123) 122 (120) 124 (121) 115 (117) 5xIF 163 (153) 150 (156) 161 (157) 151 (149) 155 (154) 144 (146) Typical Up-conversion spurious suppression (dbc): Config A (B), Square Wave LO -10 dbm RF Input 0xLO 1xLO 2xLO 3xLO 4xLO 5xLO 1xIF 23 (30) Reference 37 (36) 13 (13) 37 (37) 18 (19) 2xIF 71 (63) 64 (67) 58 (59) 73 (71) 61 (64) 70 (73) 3xIF 102 (101) 89 (90) 105 (110) 91 (91) 107 (110) 137 (138) 4xIF 135 (131) 127 (128) 130 (133) 140 (140) 133 (137) 138 (137) 5xIF 163 (153) 150 (156) 172 (174) 162 (163) 171 (167) 161 (162) Copyright 2019 Marki Microwave, Inc. P a g e 12 R e v. -

4. Die Mounting Recommendations www.markimicrowave.com MT3L-0113H 4.1 Mounting and Bonding Recommendations Marki MMICs should be attached directly to a ground plane with conductive epoxy. The ground plane electrical impedance should be as low as practically possible. This will prevent resonances and permit the best possible electrical performance. Datasheet performance is only guaranteed in an environment with a low electrical impedance ground. Mounting - To epoxy the chip, apply a minimum amount of conductive epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip. Cure epoxy according to manufacturer instructions. Wire Bonding - Ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31 mm (12 mils). Circuit Considerations 50 Ω transmission lines should be used for all high frequency connections in and out of the chip. Wirebonds should be kept as short as possible, with multiple wirebonds recommended for higher frequency connections to reduce parasitic inductance. In circumstances where the chip more than.001 thinner than the substrate, a heat spreading spacer tab is optional to further reduce bondwire length and parasitic inductance. 4.2 Handling Precautions General Handling Chips should be handled with care using tweezers or a vacuum collet. Users should take precautions to protect chips from direct human contact that can deposit contaminants, like perspiration and skin oils on any of the chip's surfaces. Static Sensitivity GaAs MMIC devices are sensitive to ESD and should be handled, assembled, tested, and transported only in static protected environments. Cleaning and Storage: Do not attempt to clean the chip with a liquid cleaning system or expose the bare chips to liquid. Once the ESD sensitive bags the chips are stored in are opened, chips should be stored in a dry nitrogen atmosphere. Copyright 2019 Marki Microwave, Inc. P a g e 13 R e v. -

4.3 Bonding Diagram Copyright 2019 Marki Microwave, Inc. P a g e 14 R e v. -

5. Mechanical Data 5.1 CH Package Outline Drawing 1. CH Substrate material is 0.004 in thick GaAs. 2. I/O trace finish is 4.2 microns Au. Ground plane finish is 5 microns Au. 5.2 S Package Outline Drawing Marki Microwave reserves the right to make changes to the product(s) or information contained herein without notice. Marki Microwave makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does Marki Microwave assume any liability whatsoever arising out of the use or application of any product. Marki Microwave, Inc.