PXAC332FV Thermally-Enhanced High Power RF LDMOS FET 33 W, 28 V, 188 25 MHz Description The PXAC332FV is a 33-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 188 to 25 MHz frequency band. Features include dual-path design, input matching, high gain and thermally-enhanced package with earless flanges. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Peak/Average Ratio, (db) 24 16 12 8 4 Single-carrier WCDMA Drive-up V DD = 28 V, I DQ = 9 ma, ƒ = 25 MHz, 3GPP WCDMA signal, PAR = 1 db, 3.84 MHz BW PAR @.1% CCDF - -4-6 c332fv_g1 25 3 35 4 45 5 55 Average Output Power (dbm) 6 4 (%) PXAC332FV Package H-37275-4 Features Broadband internal input and output matching Asymmetrical Doherty design - Main : P 1dB = 13 W Typ - Peak : P 1dB = W Typ Typical Pulsed CW performance, 25 MHz, 28 V, combined outputs, Doherty Configuration - Output power at P 1dB = 25 W - = 55% - = 16 db Capable of handling 1:1 VSWR @28 V, 25 W (CW) output power Human Body Model Class 2 (per ANSI/ESDA/ JEDEC JS-1) Integrated ESD protection Low thermal resistance Pb-free and RoHS compliant RF Characteristics Single-carrier WCDMA Specifications (tested in Wolfspeed Doherty test fixture) V DD = 28 V, I DQ = 9 ma, V GSPEAK = 1.1 V, = 56 W avg, ƒ 1 = 25 MHz, 3GPP signal, channel bandwidth = 3.84MHz, peak/average = 1 db @.1% CCDF Characteristic Symbol Min Typ Max Unit G ps 15 16 db Drain h D 45 49 % Adjancent Channel Power Ratio ACPR 3.5 26 dbc All published data at T CASE = 25 C unless otherwise indicated ESD: Electrostatic discharge sensitive device observe handling precautions!
PXAC332FV 2 DC Characteristics (each side) Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage V GS = V, I DS = 1 ma V( BR)DSS 65 V Drain Leakage Current V DS = 28 V, V GS = V I DSS 1 µa V DS = 63 V, V GS = V I DSS 1 µa On-State Resistance (main) V GS = 1 V, V DS =.1 V R DS(on).88 W On-State Resistance (peak) V GS = 1 V, V DS =.1 V R DS(on).88 W Operating Gate Voltage (main) V DS = 28 V, I DQ = 9 ma V GS 2.5 2.7 2.8 V (peak) V DS = 28 V, I DQ = A V GS.6 1.1 1.4 V Gate Leakage Current V GS = 1 V, V DS = V I GSS 1 µa Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage V DSS 65 V Gate-Source Voltage V GS 6 to +1 V Operating Voltage V DD to +32 V Junction Temperature T J 225 C Storage Temperature Range T STG 65 to +15 C Thermal Resistance (main, T CASE = 7 C, 56.2 W CW) R qjc.62 C/W (peak, T CASE = 7 C, 26 W CW) R qjc.35 C/W Ordering Information Type and Version Order Code Package Description Shipping PXAC332FV V1 R PXAC332FV-V1-R H-37275-4, earless flange Tape & Reel, 5 pcs PXAC332FV V1 R25 PXAC332FV-V1-R25 H-37275-4, earless flange Tape & Reel, 25 pcs
PXAC332FV 3 Typical Performance (data taken in a production test fixture) Single-carrier WCDMA Drive-up V DD = 28 V, I DQ = 9 ma, ƒ = 25 MHz, 3GPP WCDMA signal, PAR = 1 db, BW = 3.84 MHz Single-carrier WCDMA Broadband Performance V DD = 28 V, I DQ = 9 ma, = 47.5 dbm, 3GPP WCDMA signal, PAR = 1 db -1 6 3 5 ACP Up & Low (dbc) - -3-4 -5 ACPU -6 ACPL 5 4 3 1 (%) -7 1 c332fv_g3 27 32 37 42 47 52 57 175 185 195 5 215 Average Output Power (dbm) Frequency (MHz) (db) 25 45 4 15 35 c332fv_g2 3 (%) ACPL & ACP Up (dbc) -15 - -25 Single-carrier WCDMA Broadband Performance V DD = 28 V, I DQ = 9 ma, = 47.5 dbm, 3GPP WCDMA signal, PAR = 1 db -1-15 -3 - ACPU ACPL IRL -35-25 175 185 195 5 215 Frequency (MHz) -5 Return Loss (db) (db) 24 16 12 8 4 CW Performance V DD = 28 V, I DQ = 9mA 1MHz 25MHz 19MHz 188MHz 25MHz Eff 1MHz Eff 19MHz Eff 188MHz Eff 29 33 37 41 45 49 53 57 Output Power (dbm) c332fv_g4 c332fv_g5 6 5 4 3 1 (%)
PXAC332FV 4 Typical Performance (cont.) Power (db) 24 16 12 8 4 CW Performance at various V DD I DQ = 9 ma, ƒ = 25 MHz 24V 28V 32V 24V Eff 28V Eff 32V Eff c332fv_g6 29 33 37 41 45 49 53 57 Output Power (dbm) 6 5 4 3 1 (%) (db) 18 17 16 CW Performance Small Signal & Input Return Loss V DD = 28 V, I DQ = 9 ma IRL 15 - c332fv_g7 1825 1875 1925 1975 25 75 Frequency (MHz) -5-1 -15 Input Return Loss (db) Load Pull Performance Main Side Load Pull Performance Pulsed CW signal: 16 µs, 1% duty cycle, 28 V, I DQ = 8 ma, Class AB Freq [MHz] Zs Zl Max Output Power [db] [dbm] h D [%] P 1dB Zl Max Drain [db] [dbm] 188 2.78 j6.42 1.33 j2.33 18.5 52.5 179 55.1 3.4 j1.31 21.2 5. 1 66.7 19 2.94 j6.93 1.31 j2.4 18.5 52.5 176 54.4 2.82 j1.21 21.2 5.1 12 65.5 19 3.81 j7.27 1.3 j2.46 18.5 52.4 174 53.8 2.61 j1.25 21. 5.4 18 65.6 1 6.13 j8.11 1.17 j2.61 18.4 52.1 164 5.6 2.19 j1.29 21.2 5. 1 63.2 25 8.73 j8.92 1.29 j2.65 18.8 52.2 168 53.9 2.19 j1.35 21.2 5.1 11 62.9 Peak Side Load Pull Performance Pulsed CW signal: 16 µs, 1% duty cycle, 28 V, V GS = 1.4 V, Class C Freq [MHz] Zs Zl Max Output Power [db] [dbm] h D [%] P 1dB Zl Max Drain [db] [dbm] 188 1.47 j3.68 2.4 j2.4 15.4 54. 25 54.8 1.69 j.4 16.5 52. 159 65.4 19 1.52 j4.2 2.8 j2.31 15.8 54. 249 55.8 1.58 j.55 16.9 52.1 164 66.9 19 1.54 j4.21 2.29 j2.39 15.9 53.9 247 55.6 1.44 j.58 17. 51.9 156 66.7 1 2.84 j4.51 2.51 j2.67 16.1 53.7 236 54.5 1.5 j1.19 17.2 52.1 162 64.3 25 4.34 j5.13 2.68 j2.58 16.4 53.8 192 55.2 1.37 j1.22 17.3 51.9 155 64.6 h D [%] h D [%]
p x a c 2 3 3 2 f v _ C D _ 6-9 - 2 1 5 PXAC332FV 5 Reference Circuit, 188 25 MHz RO435,. MIL (61) RO435,. MIL (61) VGS C212 C214 VDD C1 C213 C13 C11 R12 C215 C16 C3 C12 C111 C4 C6 RF_IN RF_OUT U1 C18 C112 C5 R11 C15 C19 C17 C21 C8 C2 VGSPK C11 C14 R13 C9 VDD C7 C211 PXAC332FV_IN_1 PXAC332FV_OUT_1 Reference circuit assembly diagram (not to scale)
H - 372 75-4_ fl- D mp _pd _1 _8-1 3-2 1 4 PXAC332FV 6 Reference Circuit (cont.) Reference Circuit Assembly DUT Test Fixture Part No. PCB PXAC332FV-V1 LTA/PXAC332FV-V1 Rogers 435,.58 mm [. ] thick, 2 oz. copper, ε r = 3.66, ƒ = 188 25 MHz Find Gerber files for this test fixture on the Wolfspeed Web site at http://www.wolfspeed.com/rf Components Information Component Description Manufacturer P/N Input C11, C11 Capacitor, 1 µf Taiyo Yuden UMK325C716MM-T C12, C13, C14, C15 Capacitor, 15 pf ATC ATC6F15JT25XT C16, C111 Capacitor, 1 pf ATC ATC6F1RBT25XT C17 Capacitor, 2.7 pf ATC ATC6F2R7BT25XT C18 Capacitor, 1.6 pf ATC ATC6F1R6BT25XT C19 Capacitor,.5 pf ATC ATC6FR5BT25XT C112 Capacitor,.8 pf ATC ATC6FR8BT25XT R11, R12 Resistor, 1 Ω Panasonic Electronic Components ERJ-3GEYJ1V R13 Resistor, 5 Ω Richardson C16A5Z4 U1 Hybrid Coupler Anaren X3C19P1-5S Output C1, C2 Capacitor, 15 pf ATC ATC6F15JT25XT C3 Capacitor, 1.6 pf ATC ATC6F1R6BT25XT C4, C5 Capacitor, 6.8 pf ATC ATC6F6R8BT25XT C6 Capacitor,.3 pf ATC ATC6FR3BT25XT C7, C8, C9, C212, C213, C214 Capacitor, 1 µf Taiyo Yuden UMK325C716MM-T C21 Capacitor,.5 pf ATC ATC6FR5BT25XT C211, C215 Capacitor, 2 µf Cornell Dubilier Electronics (CDE) SK221M5ST Pinout Diagram (top view) D1 Main G1 D2 Peak G2 S Pin D1 D2 G1 G2 S Description Drain device 1 (Main) Drain device 2 (Peak) Gate device 1 (Main) Gate device 2 (Peak) Source (flange) Lead connections for PXAC332FV
C6665-A4-C25-1-27 H-37275-4-X h-37275-4-r2_po_12-22-14 PXAC332FV 7 Package Outline Specifications Package H-37275-4 2X 45 X 1.19 [45 X.47] 13.72 [.54] 2x (2.3 [.8]) LC D1 D2 3.226±.58 [.127±.] LC 1.16 [.4] 9.14 [.36] (16.61 [.654]) G1 G2 4X R.51 +.38.13 [ R. +.15.5] L C 24.4 [1.] C L 4X 11.68 [.46] 2.13 [.84] SPH 1.63 [.64] 31.242±.28 [1.23±.11] C L 4.57 +.25.13 +.1 [.18 -.5 ] 32.26 [1.27] S Diagram Notes unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ±.127 [.5] unless specified otherwise. 4. Pins: D1, D2 drains; G1, G2 gates; S source. 5. Lead thickness:.127 +.51 mm [.5 ±.2 inch]. 6. Gold plating thickness: 1.14 ±.38 micron [45 ± 15 microinch].
PXAC332FV 8 Revision History Revision Date Data Sheet Type Page Subjects (major changes since last revision) 1 14-3-3 Advance All Proposed specification for new product development. 2 14-6-12 Production All Specification for production-released device. 2.1 14-6-3 Production 1 Corrected typo in features. 2.2 16-6-22 Production 2 Updated ordering information 3 18-7-2 Production All Converted to Wolfspeed Data Sheet 3.1 18-11-8 Production 6 Corrected test fixture part no. For more information, please contact: 46 Silicon Drive Durham, North Carolina, USA 2773 www.wolfspeed.com/rf Sales Contact RFSales@wolfspeed.com RF Product Marketing Contact RFMarketing@wolfspeed.com 919.47.7816 Notes Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Typical parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. Copyright 18 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Wolfspeed and the Wolfspeed logo are trademarks of Cree, Inc. www.wolfspeed.com