N-channel 400V - 0.46Ω - 10A TO-220 PowerMESH II Power MOSFET General features Type Exceptional dv/dt capability 100% avalanche tested Low gate charge Very low intrinsic capacitances Description V DSS (@Tjmax) R DS(on) IRF740 400V <0.55Ω 10A I D TO-220 1 2 3 The PowerMESH II is the evolution of the first generation of MESH OVERLAY. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. Internal schematic diagram Applications Switching application Order codes Part number Marking Package Packaging IRF740 IRF740@ TO-220 Tube August 2006 Rev 4 1/12 www.st.com 12
Contents IRF740 Contents 1 Electrical ratings............................................ 3 2 Electrical characteristics..................................... 4 2.1 Electrical characteristics (curves)............................ 6 3 Test circuit................................................ 8 4 Package mechanical data..................................... 9 5 Revision history........................................... 11 2/12
Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V DS Drain-source voltage (V GS = 0) 400 V V DGR Drain-gate voltage (R GS = 20 kω) 400 V V GS Gate- source voltage ± 20 V I D Drain current (continuous) at T C = 25 C 10 A I D Drain current (continuous) at T C = 100 C 6.3 A (1) I DM Drain current (pulsed) 40 A P tot Total dissipation at T C = 25 C 125 W Derating Factor 1.0 W/ C dv/dt (2) Peak diode recovery voltage slope 4.0 V/ns T stg Storage temperature T j Max. operating junction temperature -65 to 150 C 1. Pulse width limited by safe operating area. 2. I SD 10A, di/dt 300A/µs, V DD V (BR)DSS, Tj T JMAX Table 2. Thermal data Rthj-case Thermal resistance junction-case max 1 C/W Rthj-amb Thermal resistance junction-ambient max 62.5 C/W T J Maximum lead temperature for soldering purpose 300 C Table 3. Avalanche characteristics Symbol Parameter Value Unit I AR E AS Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max) Single pulse avalanche energy (starting Tj=25 C, Id=Iar, Vdd=50V) 10 A 520 mj 3/12
Electrical characteristics IRF740 2 Electrical characteristics (T CASE =25 C unless otherwise specified) Table 4. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V (BR)DSS I DSS I GSS Drain-source breakdown voltage Zero gate voltage drain current (V GS = 0) Gate body leakage current (V DS = 0) I D = 250 µa, V GS = 0 400 V V DS = Max rating, V DS = Max rating @125 C 1 50 µa µa V GS = ±20V ± 100 na V GS(th) Gate threshold voltage V DS = V GS, I D = 250µA 2 3 4 V R DS(on) Static drain-source on resistance V GS = 10V, I D = 5.3A 0.46 0.55 Ω Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit g fs (1) Forward transconductance V DS > I D(on) x R DS(on)max, I D = 6A 7 S C iss C oss C rss Input capacitance Output capacitance Reverse transfer capacitance V DS =25V, f=1 MHz, V GS =0 1400 220 27 pf pf pf t d(on) t r Turn-on delay time Rise Time V DD = 200V, I D = 5A, R G = 4.7Ω, V GS = 10V (see Figure 12) 17 10 ns ns Q g Q gs Q gd Total gate charge Gate-source charge Gate-drain charge V DD =320V, I D = 10.7A V GS =10V 35 11 12 43 nc nc nc 1. Pulsed: pulse duration=300µs, duty cycle 1.5% 4/12
Electrical characteristics Table 6. Source drain diode Symbol Parameter Test conditions Min Typ. Max Unit I SD Source-drain current 10 A I SDM (1) V SD (2) Source-drain current (pulsed) 40 A Forward on voltage I SD =10A, V GS =0 1.6 V t rr Q rr I RRM Reverse recovery time Reverse recovery charge Reverse recovery current I SD =10A, di/dt = 100A/µs, V DD =100V, Tj=150 C (see Figure 12) 370 3.2 17 ns µc A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300µs, duty cycle 1.5% 5/12
Electrical characteristics IRF740 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 2. Thermal impedance Figure 3. Output characterisics Figure 4. Transfer characteristics Figure 5. Transconductance Figure 6. Static drain-source on resistance 6/12
Electrical characteristics Figure 7. Gate charge vs gate-source voltage Figure 8. Capacitance variations Figure 9. Normalized gate threshold voltage vs temperature Figure 10. Normalized on resistance vs temperature Figure 11. Source-drain diode forward characteristics 7/12
Test circuit IRF740 3 Test circuit Figure 12. Switching times test circuit for resistive load Figure 13. Gate charge test circuit Figure 14. Test circuit for inductive load switching and diode recovery times Figure 15. Unclamped Inductive load test circuit Figure 16. Unclamped inductive waveform Figure 17. Switching time waveform 8/12
Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 9/12
Package mechanical data IRF740 TO-220 MECHANICAL DATA DIM. mm. inch MIN. TYP MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 L 13 14 0.511 0.551 L1 3.50 3.93 0.137 0.154 L20 16.40 0.645 L30 28.90 1.137 øp 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 10/12
Revision history 5 Revision history Table 7. Revision history Date Revision Changes 09-Sep-2004 3 Complete version,new datasheet according to PCN DSG/CT/2C14. special marking: IRF740 @ 03-Aug-2006 4 New template, no content change 11/12
Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. 2006 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 12/12