FEATURES AND BENEFITS Patented integrated digital temperature compensation circuitry allows for near closed loop accuracy over temperature in an open loop sensor UL695-1 (ed. 2) certified Dielectric Strength Voltage = 4.8 kvrms Basic Isolation Working Voltage = 197 Vrms Reinforced Isolation Working Voltage = 565 Vrms Industry-leading noise performance with greatly improved bandwidth through proprietary amplifier and filter design techniques Pin-selectable band width: 8 khz for high bandwidth applications or 2 khz for low noise performance.85 mω primary conductor resistance for low power loss and high inrush current withstand capability Low-profile SOIC16 package suitable for spaceconstrained applications 4.5 to 5.5 V, single supply operation Output voltage proportional to AC or DC current Factory-trimmed sensitivity and quiescent output voltage for improved accuracy Continued on the next page Type tested TÜV America Certificate Number: U8V 16 3 54214 4 CB 16 3 54214 39 CB Certificate Number: US-3221-M1-UL PACKAGE: 16-pin SOICW (suffix MA) DESCRIPTION The Allegro ACS723 current sensor IC is an economical and precise solution for AC or DC current sensing in industrial, commercial, and communication systems. The small package is ideal for space constrained applications while also saving costs due to reduced board area. Typical applications include motor control, load detection and management, switched-mode power supplies, and overcurrent fault protection. The device consists of a precise, low-offset, linear Hall sensor circuit with a copper conduction path located near the surface of the die. Applied current flowing through this copper conduction path generates a magnetic field which is sensed by the integrated Hall IC and converted into a proportional voltage. Device accuracy is optimized through the close proximity of the magnetic field to the Hall transducer. A precise, proportional voltage is provided by the low-offset, chopper-stabilized BiCMOS Hall IC, which includes Allegro s patented digital temperature compensation, resulting in extremely accurate performance over temperature. The output of the device has a positive slope when an increasing current flows through the primary copper conduction path (from pins 1 through 4, to pins 5 through 8), which is the path used for current sensing. The internal resistance of this conductive path is.85 mω typical, providing low power loss. The terminals of the conductive path are electrically isolated from the sensor leads (pins 9 through 16). This allows the ACS723 current sensor IC to be used in high-side current sense applications without the use of high-side differential amplifiers or other costly isolation techniques. Not to scale Continued on the next page +I I P I P P 1 IP+ 2 IP+ 3 IP+ 4 IP+ 5 6 7 8 IP IP IP IP ACS723 16 NC 15 GND 14 NC 13 BW_SEL 12 VIOUT 11 NC 1 VCC NC 9 C L C BYPASS.1 F The ACS723 outputs an analog signal, V IOUT, that changes, proportionally, with the bidirectional AC or DC primary sensed current, I P, within the specified measurement range. The BW_SEL pin can be used to select one of the two bandwidths to optimize the noise performance. Grounding the BW_SEL pin puts the part in the high bandwidth (8 khz) mode. Typical Application ACS723-DS, Rev. 2 MCO-547 December 17, 218
FEATURES AND BENEFITS (continued) Chopper stabilization results in extremely stable quiescent output voltage Nearly zero magnetic hysteresis Ratiometric output from supply voltage DESCRIPTION (continued) The ACS723 is provided in a low profile surface mount SOIC16 package. The leadframe is plated with 1% matte tin, which is compatible with standard lead (Pb) free printed circuit board assembly processes. Internally, the device is Pb-free, except for flip-chip hightemperature Pb-based solder balls, currently exempt from RoHS. The device is fully calibrated prior to shipment from the factory. SELECTION GUIDE Part Number I PR (A) Sens(Typ) at V CC = 5. V (mv/a) ACS723KMATR-1AB-T ±1 2 ACS723KMATR-2AB-T ±2 1 ACS723KMATR-4AB-T ±4 5 T A ( C) Packing [1] 4 to 125 Tape and Reel, 3 pieces per reel [1] Contact Allegro for additional packing options. Manchester, NH 313-3353 U.S.A. 2
SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Notes Rating Units Supply Voltage V CC 6 V Reverse Supply Voltage V RCC.1 V Output Voltage V IOUT 25 V Reverse Output Voltage V RIOUT.1 V Operating Ambient Temperature T A Range K 4 to 125 C Junction Temperature T J(max) 165 C Storage Temperature T stg 65 to 165 C ISOLATION CHARACTERISTICS Characteristic Symbol Notes Rating Unit Dielectric Strength Test Voltage V ISO (edition. 2). Production tested at 3 V RMS for 1 second, 48 V RMS Agency type-tested for 6 seconds per UL 695-1 in accordance with UL 695-1 (edition. 2). Working Voltage for Basic Isolation V WVBI Maximum approved working voltage for basic (single) isolation according UL 695-1 (edition 2) 155 V PK 197 V RMS or VDC Working Voltage for Reinforced Isolation V WVRI Maximum approved working voltage for reinforced isolation according to UL 695-1 (edition 2) Minimum distance through air from IP leads to signal Clearance D cl leads. Minimum distance along package body from IP leads to Creepage D cr signal leads 8 V PK 565 V RMS or VDC 7.5 mm 8.2 mm THERMAL CHARACTERISTICS Characteristic Symbol Test Conditions* Value Units Package Thermal Resistance (Junction to Ambient) Package Thermal Resistance (Junction to Lead) R θja *Additional thermal information available on the Allegro website. Mounted on the Allegro 85-738 evaluation board with 7 mm2 of 4 oz. copper on each side, connected to pins 1 and 2, and to pins 3 and 4, with thermal vias connecting the layers. Performance values include the power consumed by the PCB. 23 C/W R θjl Mounted on the Allegro ASEK 723 evaluation board. 5 C/W Manchester, NH 313-3353 U.S.A. 3
VCC Master Current Supply To All Subcircuits POR Programming Control Hall Current Drive Temperature Sensor EEPROM and Control Logic IP+ IP+ IP+ IP+ Sensitivity Control Offset Control IP IP Dynamic Offset Cancellation Tuned Filter VIOUT IP IP BW_SEL GND Functional Block Diagram IP+ 1 16 NC IP+ 2 15 GND IP+ 3 14 NC IP+ 4 13 BW_SEL IP- 5 12 VIOUT IP- 6 11 NC IP- 7 1 VCC IP- 8 9 NC Pinout Diagram Terminal List Table Number Name Description 1, 2, 3, 4 IP+ Terminals for current being sensed; fused internally 5, 6, 7, 8 IP- Terminals for current being sensed; fused internally 9, 16 NC No internal connection; recommended to be left unconnected in order to maintain high creepage. 1 VCC Device power supply terminal 11, 14 NC No internal connection; recommened to connect to GND for the best ESD performance 12 VIOUT Analog output signal 13 BW_SEL Terminal for selecting 2 khz or 8 khz bandwidth 15 GND Signal ground terminal Manchester, NH 313-3353 U.S.A. 4
COMMON ELECTRICAL CHARACTERISTICS [1]: Valid through the full range of T A = 4 C to 125 C, and at V CC = 5 V, unless otherwise specified Characteristic Symbol Test Conditions Min. Typ. Max. Units Supply Voltage V CC 4.5 5 5.5 V Supply Current I CC V CC within V CC (min) and V CC (max) 9 14 ma Output Capacitance Load C L VIOUT to GND 1 nf Output Resistive Load R L VIOUT to GND 4.7 kω Primary Conductor Resistance R IP T A = 25 C.85 mω Magnetic Coupling Factor C F 4.5 G/A Rise Time Propagation Delay Response Time Internal Bandwidth t r t pd t RESPONSE BWi I P = I P (max), T A = 25 C, C L = 1 nf, BW_SEL tied to GND I P = I P (max), T A = 25 C, C L = 1 nf, BW_SEL tied to VCC I P = I P (max), T A = 25 C, C L = 1 nf, BW_SEL tied to GND I P = I P (max), T A = 25 C, C L = 1 nf, BW_SEL tied to VCC I P = I P (max), T A = 25 C, C L = 1 nf, BW_SEL tied to GND I P = I P (max), T A = 25 C, C L = 1 nf, BW_SEL tied to VCC Small signal 3 db; C L = 1 nf, BW_SEL tied to GND Small signal 3 db; C L = 1nF, BW_SEL tied to VCC Noise Density I ND Input referenced noise density; T A = 25 C, C L = 1 nf 4 μs 17.5 μs 2 μs 5 μs 5 μs 22.5 μs 8 khz 2 khz 22 Input referenced noise; BWi = 8 khz, 62 ma T A = 25 C, C L = 1 nf (rms) Noise I N Input referenced noise; BWi = 2 khz, 31 ma T A = 25 C, C L = 1 nf (rms) Nonlinearity E LIN Through full range of I P ±1 % V Saturation Voltage [2] OH R L = 4.7 kω, T A = 25 C V CC.5 V V OL R L = 4.7 kω, T A = 25 C.5 V Output reaches 9% of steady-state Power-On Time t PO 64 μs level, T A = 25 C, I P = I PR (max) applied [1] Device may be operated at higher primary current levels, I P, ambient temperatures, T A, and internal leadframe temperatures, provided the Maximum Junction Temperature, T J (max), is not exceeded. [2] The sensor IC will continue to respond to current beyond the range of I P until the high or low saturation voltage; however, the nonlinearity in this region will be worse than through the rest of the measurement range. µa (rms) / Hz Manchester, NH 313-3353 U.S.A. 5
xkmatr-1ab PERFORMANCE CHARACTERISTICS: T A Range K, valid at T A = 4 C to 125 C, V CC = 5. V, unless otherwise specified Characteristic Symbol Test Conditions Min. Typ. [1] Max. Units NOMINAL PERFORMANCE Current Sensing Range I PR 1 1 A Sensitivity Sens I PR(min) < I P < I PR(max) 2 mv/a Zero Current Output Voltage V IOUT(Q) Bidirectional; I P = A ACCURACY PERFORMANCE V CC.5 V Total Output Error [2] E TOT I P = I PR(max), T A = 25 C to 125 C 2.5 ±1.4 2.5 % I P = I PR(max), T A = 4 C to 25 C ±2 % TOTAL OUTPUT ERROR COMPONENTS [3] : E TOT = E SENS + 1 V OE /(Sens I P ) Sensitivity Error E SENS T A = 25 C to 125 C; measured at I P = I PR(max) 2 ±1.3 2 % T A = 4 C to 25 C; measured at I P = I PR(max) ±1.8 % Offset Voltage [4] V OE I P = A; T A = 25 C to 125 C 15 ±1 15 mv I P = A; T A = -4 C to 25 C ±2 mv LIFETIME DRIFT CHARACTERISTICS Sensitivity Error Lifetime Drift E sens_drift ±1 % Total Output Error Lifetime Drift E tot_drift ±1 % [1] Typical values with +/- are 3 sigma values. [2] Percentage of I P, with I P = I PR (max) [3] A single part will not have both the maximum/minimum sensitivity error and maximum/minimum offset voltage, as that would violate the maximum/minimum total output error specification. Also, 3 sigma distribution values are combined by taking the square root of the sum of the squares. See Application Information section. [4] Offset Voltage does not incorporate any error due to external magnetic fields. See section: Impact of External Magnetic Fields. Manchester, NH 313-3353 U.S.A. 6
xkmatr-2ab PERFORMANCE CHARACTERISTICS: T A Range K, valid at T A = 4 C to 125 C, V CC = 5. V, unless otherwise specified Characteristic Symbol Test Conditions Min. Typ. [1] Max. Units NOMINAL PERFORMANCE Current Sensing Range I PR 2 2 A Sensitivity Sens I PR(min) < I P < I PR(max) 1 mv/a Zero Current Output Voltage V IOUT(Q) Bidirectional; I P = A ACCURACY PERFORMANCE V CC.5 V Total Output Error [2] E TOT I P = I PR(max), T A = 25 C to 125 C 2 ±1.3 2 % I P = I PR(max), T A = 4 C to 25 C ±2 % TOTAL OUTPUT ERROR COMPONENTS [3] : E TOT = E SENS + 1 V OE /(Sens I P ) Sensitivity Error E SENS T A = 25 C to 125 C; measured at I P = I PR(max) 1.5 ±1.2 1.5 % T A = 4 C to 25 C; measured at I P = I PR(max) ±1.8 % Offset Voltage [4] V OE I P = A; T A = 25 C to 125 C 1 ±5 1 mv I P = A; T A = 4 C to 25 C ±12 mv LIFETIME DRIFT CHARACTERISTICS Sensitivity Error Lifetime Drift E sens_drift ±1 % Total Output Error Lifetime Drift E tot_drift ±1 % [1] Typical values with +/- are 3 sigma values. [2] Percentage of I P, with I P = I PR (max) [3] A single part will not have both the maximum/minimum sensitivity error and maximum/minimum offset voltage, as that would violate the maximum/minimum total output error specification. Also, 3 sigma distribution values are combined by taking the square root of the sum of the squares. See Application Information section. [4] Offset Voltage does not incorporate any error due to external magnetic fields. See section: Impact of External Magnetic Fields. Manchester, NH 313-3353 U.S.A. 7
xkmatr-4ab PERFORMANCE CHARACTERISTICS: T A Range K, valid at T A = 4 C to 125 C, V CC = 5. V, unless otherwise specified Characteristic Symbol Test Conditions Min. Typ. [1] Max. Units NOMINAL PERFORMANCE Current Sensing Range I PR 4 4 A Sensitivity Sens I PR(min) < I P < I PR(max) 5 mv/a Zero Current Output Voltage V IOUT(Q) Bidirectional; I P = A ACCURACY PERFORMANCE V CC.5 V Total Output Error [2] E TOT I P = I PR(max), T A = 25 C to 125 C 2 ±.8 2 % I P = I PR(max), T A = 4 C to 25 C ±1.8 % TOTAL OUTPUT ERROR COMPONENTS [3] : E TOT = E SENS + 1 V OE /(Sens I P ) Sensitivity Error E SENS T A = 25 C to 125 C; measured at I P = I PR(max) 1.5 ±.8 1.5 % T A = 4 C to 25 C; measured at I P = I PR(max) ±1.8 % Offset Voltage [4] V OE I P = A; T A = 25 C to 125 C 1 ±4 1 mv I P = A; T A = 4 C to 25 C ±6 mv LIFETIME DRIFT CHARACTERISTICS Sensitivity Error Lifetime Drift E sens_drift ±1 % Total Output Error Lifetime Drift E tot_drift ±1 % [1] Typical values with +/- are 3 sigma values. [2] Percentage of I P, with I P = I PR (max) [3] A single part will not have both the maximum/minimum sensitivity error and maximum/minimum offset voltage, as that would violate the maximum/minimum total output error specification. Also, 3 sigma distribution values are combined by taking the square root of the sum of the squares. See Application Information section. [4] Offset Voltage does not incorporate any error due to external magnetic fields. See section: Impact of External Magnetic Fields. Manchester, NH 313-3353 U.S.A. 8
CHARACTERISTIC PERFORMANCE xkmatr-1ab Key Parameters Zero Current Output Voltage vs. Temperature Offset Voltage vs. Temperature V (mv) IOUT(Q) 2525 252 2515 251 255 25 2495 249 2485 248 2475-5 5 1 15-5 5 1 15 Offset Voltage (mv) 25 2 15 1 5-5 -1-15 -2-25 Sensitivity vs. Temperature Sensitivity Error vs. Temperature 25 2.5 Sensitivity (mv/a) 24 23 22 21 2 199 198 197 196 195-5 5 1 15 Sensitivity Error (%) 2. 1.5 1..5. -.5-1. -1.5-2. -2.5-5 5 1 15 Nonlinearity vs. Temperature Total Error at I vs. Temperature PR(max) 1.5 2.5 1. 2. 1.5 Nonlinearity (%).5. -.5 Total Error (%) 1..5. -.5-1. -1. -1.5-2. -1.5-2.5-5 5 1 15-5 5 1 15 +3 Sigma Average -3 Sigma Manchester, NH 313-3353 U.S.A. 9
xkmatr-2ab Key Parameters Zero Current Output Voltage vs. Temperature Offset Voltage vs. Temperature 252 2 2515 15 V (mv) IOUT(Q) 251 1 255 5 25 2495-5 249-1 Offset Voltage (mv) 2485-15 248-2 -5 5 1 15-5 5 1 15 Sensitivity vs. Temperature Sensitivity Error vs. Temperature 13 2.5 12 2. 1.5 Sensitivity (mv/a) 11 1 99 98 97 Sensitivity Error (%) 1..5. -.5-1. -1.5-2. -2.5-5 5 1 15-5 5 1 15 Nonlinearity vs. Temperature Total Error at I vs. Temperature PR(max) 1. 3..8.6 2. Nonlinearity (%).4.2. -.2 -.4 Total Error (%) 1.. -1. -.6 -.8-2. -1. -3. -5 5 1 15-5 5 1 15 +3 Sigma Average -3 Sigma Manchester, NH 313-3353 U.S.A. 1
xkmatr-4ab Key Parameters Zero Current Output Voltage vs. Temperature Offset Voltage vs. Temperature 258 8 256 6 V (mv) IOUT(Q) 254 252 25 2498 2496 Offset Voltage (mv) 4 2-2 -4 2494-6 2492-8 -5 5 1 15-5 5 1 15 Sensitivity vs. Temperature Sensitivity Error vs. Temperature 51.5 2.5 51. 2. 1.5 Sensitivity (mv/a) 5.5 5. 49.5 49. Sensitivity Error (%) 1..5. -.5-1. -1.5-2. 48.5-2.5-5 5 1 15-5 5 1 15 Nonlinearity vs. Temperature Total Error at I vs. Temperature PR(max).5 2.5 Nonlinearity (%).4 2..3 1.5.2 1..1.5.. -.1 -.5 -.2-1. -.3-1.5 -.4-2. -.5-2.5 Total Error (%) -5 5 1 15-5 5 1 15 +3 Sigma Average -3 Sigma Manchester, NH 313-3353 U.S.A. 11
Sensitivity (Sens) The change in sensor IC output in response to a 1 A change through the primary conductor. The sensitivity is the product of the magnetic coupling factor (G / A) (1 G =.1 mt)and the linear IC amplifier gain (mv/g). The linear IC amplifier gain is programmed at the factory to optimize the sensitivity (mv/a) for the full-scale current of the device. Nonlinearity (E LIN ) The nonlinearity is a measure of how linear the output of the sensor IC is over the full current measurement range. The nonlinearity is calculated as: { V 1 [ IOUT (I PR (max)) V IOUT(Q) E 1 (%) LIN = 2 V IOUT (I PR (max)/2) V IOUT(Q) where V IOUT (I PR(max) ) is the output of the sensor IC with the maximum measurement current flowing through it and V IOUT (I PR(max) /2) is the output of the sensor IC with half of the maximum measurement current flowing through it. Zero Current Output Voltage (V IOUT(Q) ) The output of the sensor when the primary current is zero. For a unipolar supply voltage, it nominally remains at.5 V CC for a bidirectional device and.1 V CC for a unidirectional device. For example, in the case of a bidirectional output device, V CC = 5. V translates into V IOUT(Q) = 2.5 V. Variation in V IOUT(Q) can be attributed to the resolution of the Allegro linear IC quiescent voltage trim and thermal drift. Offset Voltage (V OE ) The deviation of the device output from its ideal quiescent value of.5 V CC (bidirectional) or.1 V CC (unidirectional) due to nonmagnetic causes. To convert this voltage to amperes, divide by the device sensitivity, Sens. Total Output Error (E TOT ) The the difference between the current measurement from the sensor IC and the actual current (I P ), relative to the actual current. This is equivalent to the difference between the ideal output voltage and the actual output voltage, divided by the ideal sensitivity, relative to the current flowing through the primary conduction path: E TOT (I P ) = DEFINITIONS OF ACCURACY CHARACTERISTICS V IOUT_ideal (I P ) V IOUT (I P ) Sens ideal (I P ) I P 1 (%) { [ due to sensitivity error, and at relatively low currents, E TOT will be mostly due to Offset Voltage (V OE ). In fact, at I P =, E TOT approaches infinity due to the offset. This is illustrated in Figures 1 and 2. Figure 1 shows a distribution of output voltages versus I P at 25 C and across temperature. Figure 2 shows the corresponding E TOT versus I P. I P (A) Figure 1: Output Voltage versus Sensed Current I P I PR (min) Accuracy Across Temperature Accuracy at 25 C Only Accuracy at 25 C Only Accuracy Across Temperature Increasing V IOUT (V) A E TOT Decreasing V IOUT (V) Accuracy Across Temperature Accuracy at 25 C Only Ideal V IOUT +E TOT V IOUT(Q) Full Scale I P I PR (max) Across Temperature 25 C Only +I P (A) +I P The Total Output Error incorporates all sources of error and is a function of I P. At relatively high currents, E TOT will be mostly Figure 2: Total Output Error versus Sensed Current Manchester, NH 313-3353 U.S.A. 12
APPLICATION INFORMATION Impact of External Magnetic Fields The ACS723 works by sensing the magnetic field created by the current flowing through the package. However, the sensor cannot differentiate between fields created by the current flow and external magnetic fields. This means that external magnetic fields can cause errors in the output of the sensor. Magnetic fields which are perpendicular to the surface of the package affect the output of the sensor, as it only senses fields in that one plane. The error in Amperes can be quantified as: Error(B) = B C F where B is the strength of the external field perpendicular to the surface of the package in Gauss, and C F is the coupling factor in G/A. Then, multiplying by the sensitivity of the part (Sens) gives the error in mv. For example, an external field of 1 Gauss will result in around.22 A of error. If the ACS723KMATR-1AB, which has a nominal sensitivity of 2 mv/a, is being used, that equates to 44 mv of error on the output of the sensor. Table 1: External Magnetic Field (Gauss) Impact External Field Error (mv) Error (A) (Gauss) 1AB 2AB 4AB.5.11 22 11 6 1.22 44 22 11 2.44 88 44 22 Estimating Total Error vs. Sensed Current The Performance Characteristics tables give distribution (±3 sigma) values for Total Error at I PR(max) ; however, one often wants to know what error to expect at a particular current. This can be estimated by using the distribution data for the components of Total Error, Sensitivity Error and Offset Voltage. The ±3 sigma value for Total Error (E TOT ) as a function of the sensed current (I P ) is estimated as: E TOT(I) P = E + SENS2 ( 2 ) 1 V OE Sens I P Here, E SENS and V OE are the ±3 sigma values for those error terms. If there is an average sensitivity error or average offset voltage, then the average Total Error is estimated as: 1 V OEAVG E TOT (I) P = E SENS + AVG AVG Sens I P The resulting total error will be a sum of E TOT and E TOT_AVG. Using these equations and the 3 sigma distributions for Sensitivity Error and Offset Voltage, the Total Error vs. sensed current (I P ) is below for the ACS723KMATR-4AB. As expected, as one goes towards zero current, the error in percent goes towards infinity due to division by zero (refer to Figure 3). Total Error (% of current measured) 15. 1. 5.. -5. -1. -15. 5 1 15 2 25 3 35 4 Current (A) -4C+3sig -4C-3sig 25C+3sig 25C-3sig 125C+3sig 125C-3sig Figure 3: Predicted Total Error as a Function of Sensed Current for the ACS723KMATR-4AB Manchester, NH 313-3353 U.S.A. 13
DEFINITIONS OF DYNAMIC RESPONSE CHARACTERISTICS Power-On Time (t PO ) When the supply is ramped to its operating voltage, the device requires a finite time to power its internal components before responding to an input magnetic field. Power-On Time (t PO ) is defined as the time it takes for the output voltage to settle within ±1% of its steady state value under an applied magnetic field, after the power supply has reached its minimum specified operating voltage (V CC(min) ) as shown in the chart at right (refer to Figure 4). Rise Time (t r ) The time interval between: a) when the sensor IC reaches 1% of its full scale value; and b) when it reaches 9% of its full scale value (refer to Figure 5). The rise time to a step response is used to derive the bandwidth of the current sensor IC, in which ƒ( 3 db) =.35 / t r. Both t r and t RESPONSE are detrimentally affected by eddy current losses observed in the conductive IC ground plane. Propagation Delay (t pd ) The propagation delay is measured as the time interval between: a) when the primary current signal reaches 2% of its final value; and b) when the device reaches 2% of its output corresponding to the applied current (refer to Figure 5). Response Time (t RESPONSE ) The time interval between: a) when the primary current signal reaches 9% of its final value; and b) when the device reaches 9% of its output corresponding to the applied current (refer to Figure 6). V V CC (typ.) 9% V IOUT V CC (min.) (%) 9 2 1 (%) 9 V CC t 1 t 2 t PO V IOUT t 1 = time at which power supply reaches minimum specified operating voltage t 2 = time at which output voltage settles within ±1% of its steady state value under an applied magnetic field Figure 4: Power-On Time Primary Current V IOUT Rise Time, tr Propagation Delay, tpd Figure 5: Rise Time and Propagation Delay Primary Current V IOUT t t Response Time, tresponse t Figure 6: Response Time Manchester, NH 313-3353 U.S.A. 14
NOT TO SCALE All dimensions in millimeters..65 15.75 9.54 1.27 Package Outline 2.25 Slot in PCB to maintain >8 mm creepage once part is on PCB 7.25 3.56 1.27 17.27 Current In Current Out 21.51 Perimeter holes for stitching to the other, matching current trace design, layers of the PCB for enhanced thermal capability. Figure 7: High-Isolation PCB Layout Manchester, NH 313-3353 U.S.A. 15
16 PACKAGE OUTLINE DRAWING For Reference Only Not for Tooling Use (Reference MS-13AA) NOTTO SCALE Dimensions in millimeters Dimensions exclusive of mold flash, gate burrs, and dambar protrusions Exact case and lead configuration at supplier discretion within limits shown 1.3 ±.2 8.33.2 7.5 ±.1 1.3 ±.33 A 1 2 1.27.4 1.4 REF Branded Face.25 BSC 16X.1 C 2.65 MAX SEATING PLANE C SEATING PLANE GAUGE PLANE.51.31 1.27 BSC.3.1.65 1.27 2.25 16 NNNNNNN LLLLLLLL 9.5 B 1 Standard Branding Reference View N = Device part number L = Assembly Lot Number, first eight characters A Terminal #1 mark area C 1 2 PCB Layout Reference View B C Branding scale and appearance at supplier discretion Reference land pattern layout (reference IPC7351 SOIC127P6X175-8M); all pads a minimum of.2 mm from all adjacent pads; adjust as necessary to meet application process requirements and PCB layout tolerances Figure 8: Package MA, 16-pin SOICW Manchester, NH 313-3353 U.S.A. 16
REVISION HISTORY Number Date Description February 23, 215 Initial release 1 April 13, 216 Corrected Package Outline Drawing branding information (page 16). 2 December 17, 218 Updated certificate numbers and minor editorial updates Copyright 218, reserves the right to make, from time to time, such departures from the detail specifications as may be required to permit improvements in the performance, reliability, or manufacturability of its products. Before placing an order, the user is cautioned to verify that the information being relied upon is current. Allegro s products are not to be used in any devices or systems, including but not limited to life support devices or systems, in which a failure of Allegro s product can reasonably be expected to cause bodily harm. The information included herein is believed to be accurate and reliable. However, assumes no responsibility for its use; nor for any infringement of patents or other rights of third parties which may result from its use. Copies of this document are considered uncontrolled documents. For the latest version of this document, visit our website: Manchester, NH 313-3353 U.S.A. 17