Product Overview The QPD1003 is a 500 W (P3dB) internally matched discrete GaN on SiC HEMT which operates from 1.2 to 1.4 GHz and a 50V supply rail. The device is GaN IMFET fully matched to 50 Ω in an industry standard air cavity package and is ideally suited for military and civilian radar. The device can support pulsed and linear operations. Lead-free and ROHS compliant Evaluation boards are available upon request. Key Features Functional Block Diagram Frequency: 1.2 to 1.4 GHz Output Power (P3dB) 1 : 540 W Linear Gain 1 : 19.9 db Typical PAE3dB 1 : 66.7% Operating Voltage: 50 V Low thermal resistance package Pulse capable Note 1: @ 1.3 GHz Applications Military radar Civilian radar Input Matching Network Output Matching Network Ordering info Part No. ECCN Description QPD1003 EAR99 1.2 1.4 GHz RF IMFET QPD1003PCB401 EAR99 1.2 1.4 GHz EVB - 1 of 19 - www.qorvo.com
Absolute Maximum Ratings 1 Parameter Rating Units Breakdown Voltage,BVDG +145 V Gate Voltage Range, VG -7 to +1.5 V Drain Current A Gate Current Range, IG See page 4. ma Power Dissipation, 10% DC 1 ms PW, PDISS 410 W RF Input Power, 10% DC 1 ms PW, 1.3 GHz, T = 25 C +42 dbm Channel Temperature, TCH 275 C Mounting Temperature (30 Seconds) 3 C Storage Temperature 65 to +0 C 1. Operation of this device outside the parameter ranges given above may cause permanent damage. Recommended Operating Conditions 1 Parameter Min Typ Max Units Operating Temp. Range 40 +25 +85 C Drain Voltage Range, VD +28 +50 +55 V Drain Bias Current, IDQ 750 ma Drain Current, ID A Gate Voltage, VG 4 2.8 V Channel Temperature (TCH) 250 C Power Dissipation, Pulsed (PD) 2, 3 370 W 1. Electrical performance is measured under conditions noted in the electrical specifications table. Specifications are not guaranteed over all recommended operating conditions. 2. Package base at 85 C 3. Pulse Width = 1 ms, Duty Cycle = 10% 4. To be adjusted to desired IDQ Pulsed Characterization Load-Pull Performance Power Tuned 1 Parameters Typical Values Unit Frequency, F 1.2 1.3 1.4 GHz Linear Gain, GLIN 19 19.9 18.6 db Output Power at 3dB compression point, P3dB 57.3 57.3 57 dbm Power-Added-Efficiency at 3dB compression point, PAE3dB 55.1 57.6 56.9 % Gain at 3dB compression point 16 16.9.6 db 1. Test conditions unless otherwise noted: VD = +50 V, IDQ = 750 ma, Temp = +25 C Pulsed Characterization Load-Pull Performance Efficiency Tuned 1 Parameters Typical Values Unit Frequency, F 1.2 1.3 1.4 GHz Linear Gain, GLIN.3.6 19.4 db Output Power at 3dB compression point, P3dB 55.4 55.6 55.3 dbm Power-Added-Efficiency at 3dB compression point, PAE3dB 70.3 66.7 67.4 % Gain at 3dB compression point, 17.3 17.6 16.4 db G3dB 1. Test conditions unless otherwise noted: VD = +50 V, IDQ = 750 ma, Temp = +25 C - 2 of 19 - www.qorvo.com
RF Characterization 1.2 1.4 GHz EVB Performance At 1.2 GHz 1 Parameter Min Typ Max Units Linear Gain, GLIN 18.6 db Output Power at 3dB compression point, P3dB 57.1 dbm Power-Added Efficiency at 3dB compression point, 57.7 % PAE3dB Gain at 3dB compression point, G3dB.6 db 1. VD = +50 V, IDQ = 750 ma, Temp = +25 C, CW RF Characterization 1.2 1.4 GHz EVB Performance At 1.3 GHz 1 Parameter Min Typ Max Units Linear Gain, GLIN 19.8 db Output Power at 3dB compression point, P3dB 56.6 dbm Power-Added Efficiency at 3dB compression point, 62.0 % PAE3dB Gain at 3dB compression point, G3dB 16.8 db 1. VD = +50 V, IDQ = 750 ma, Temp = +25 C, CW RF Characterization 1.2 1.4 GHz EVB Performance At 1.4 GHz 1 Parameter Min Typ Max Units Linear Gain, GLIN 18.5 db Output Power at 3dB compression point, P3dB 56.4 dbm Power-Added Efficiency at 3dB compression point, 59.2 % PAE3dB Gain at 3dB compression point, G3dB.5 db 1. VD = +50 V, IDQ = 750 ma, Temp = +25 C, CW RF Characterization Mismatch Ruggedness at 1.3 GHz 1 Symbol Parameter db Compression Typical VSWR Impedance Mismatch Ruggedness 3 5:1 1. Test conditions unless otherwise noted: TA = 25 C, VD = 50 V, IDQ = 750 ma, 1 ms PW, 10% DC 2. Driving input power is determined at pulsed compression under matched condition at EVB output connector. - 3 of 19 - www.qorvo.com
Maximum Gate Current - 4 of 19 - www.qorvo.com
Median Lifetime 1 Median Lifetime, T M (Hours) 1.00E+19 1.00E+18 1.00E+17 1.00E+16 1.00E+ 1.00E+14 1.00E+13 1.00E+12 1.00E+11 1.00E+10 1.00E+09 1.00E+08 1.00E+07 1.00E+06 1.00E+05 Median Lifetime vs. Channel Temperature 25 50 75 100 125 0 175 0 225 250 275 Channel Temperature, T CH ( C) 1. For pulsed signals, average lifetime is average lifetime at maximum channel temperature divided by duty cycle. - 5 of 19 - www.qorvo.com
Thermal and Reliability Information Pulsed Peak Channel Temperature [ C] 3 300 280 260 240 2 0 180 160 140 1 100 80 60 QPD1003 Peak Channel Temperature vs. Pulse Width Base Temperature @ 85 C Pdiss = 277 W Pdiss = 370 W Pdiss = 462 W Max Channel Temperature 40 1.0E-09 1.0E-08 1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 Pulse Width [Sec] Parameter Conditions Values Units Thermal Resistance (θjc) 0.44 C/W 85 C back side temperature Maximum Channel Temperature (TCH) 198 C 277 W Pdiss, 1 ms PW, 10% DC Median Lifetime I 5.2E8 Hrs Thermal Resistance (θjc) 0.48 C/W 85 C back side temperature Maximum Channel Temperature (TCH) 250 C 370 W Pdiss, 1 ms PW, 10% DC Median Lifetime I 8.4E6 Hrs Thermal Resistance (θjc) 0.52 C/W 85 C back side temperature Maximum Channel Temperature (TCH) 311 C 462 W Pdiss, 1 ms PW, 10% DC Median Lifetime I 1.5E5 Hrs - 6 of 19 - www.qorvo.com
1, 2, 3 Load-Pull Smith Charts 1. VD = 50 V, IDQ = 750 ma, 1 ms PW, 10% DC pulsed. Performance is at 3dB gain compression referenced to peak gain. 2. See page 14 for load-pull and source-pull reference planes. 50-Ω load-pull TRL fixtures are built with -mil RO4350B material. 3. NaN means the impedances are either undefined or varying in load-pull system. 1.2GHz, Load-pull Zs(fo) = 50-0.01iΩ Zs(2fo) = 53.4+28.74iΩ Zs(3fo) = 67.51+56.9iΩ Zl(2fo) = NaNΩ Zl(3fo) = NaNΩ Max Power is 57.3dBm at Z = 38.711+13.983iΩ Γ = -0.0999+0.1734i Max Gain is 17.4dB at Z = 146.401+21.891iΩ Γ = 0.4971+0.0561i Max PAE is 70.3% at Z = 117.619-0.032iΩ Γ = 0.4034-0.0001i 16.4 16.9 64.5 66.5 0.4 0.5 0.6 0.7 0.8 0.9 1 57.2 1.2 1.4 68.5 1.6 1.8 2 17.4 3 57 56.8 Zo = 50Ω 3dB Compression Referenced to Peak Gain Power Gain PAE - 7 of 19 - www.qorvo.com
1, 2, 3 Load-Pull Smith Charts 1. VD = 50 V, IDQ = 750 ma, 1 ms PW, 10% DC pulsed. Performance is at 3dB gain compression referenced to peak gain. 2. See page 14 for load-pull and source-pull reference planes. 50-Ω load-pull TRL fixtures are built with -mil RO4350B material. 3. NaN means the impedances are either undefined or varying in load-pull system. 1.3GHz, Load-pull Zs(fo) = 49.99+0.01iΩ Zs(2fo) = 48.17+46.93iΩ Zs(3fo) = 39.12-47.6iΩ Zl(2fo) = NaNΩ Zl(3fo) = NaNΩ 18 Max Power is 57.3dBm at Z = 33.332+0.002iΩ Γ = -0.2 Max Gain is 18.1dB at Z = 37.8+48.733iΩ Γ = 0.1294+0.4832i Max PAE is 66.7% at Z = 63.965+19.872iΩ Γ = 0.1484+0.1485i 17.5 17 65.1 63.1 0.5 0.6 0.7 0.8 0.9 61.1 1 1.2 1.4 1.6 1.8 2 57.1 56.9 56.7 Zo = 50Ω 3dB Compression Referenced to Peak Gain Power Gain PAE - 8 of 19 - www.qorvo.com
1, 2, 3 Load-Pull Smith Charts 1. VD = 50 V, IDQ = 750 ma, 1 ms PW, 10% DC pulsed. Performance is at 3dB gain compression referenced to peak gain. 2. See page 14 for load-pull and source-pull reference planes. 50-Ω load-pull TRL fixtures are built with -mil RO4350B material. 3. NaN means the impedances are either undefined or varying in load-pull system. 1.4GHz, Load-pull Zs(fo) = 50-0.02iΩ Zs(2fo) = 43.81+72iΩ Zs(3fo) = 34.92-23.54iΩ Zl(2fo) = NaNΩ Zl(3fo) = NaNΩ Max Power is 57dBm at Z = 46.6-19.245iΩ Γ = 0.0001-0.01i Max Gain is 16.5dB at Z = 33.348+16.116iΩ Γ = -0.65+0.2236i Max PAE is 67.4% at Z = 46.1+19.213iΩ Γ = -0.0001+0.1998i 65.8 0.7 0.8 0.9 1 63.8 1.2 1.4 1.6 1.8 2 3 4 16 61.8.5 56.9 56.7 56.5 Zo = 50Ω 3dB Compression Referenced to Peak Gain Power Gain PAE - 9 of 19 - www.qorvo.com
Typical Performance Load-Pull Drive-up 1, 2 1. 1 ms PW, 10% DC pulsed signal, VD = 50 V, IDQ = 750 ma 2. See page 14 for load-pull and source-pull reference planes where the performance was measured. Gain [db] 22 21 19 18 17 16 14 13 QPD1003 - Gain and PAE vs. Output Power 1.2 GHz - Power Tuned Zs-fo = 50-0.01iΩ Zs-2fo = 53.4+28.74iΩ Zs-3fo = 67.51+56.9iΩ Zl-fo = 38.711+13.983iΩ Zl-2fo = NaNΩ Zl-3fo = NaNΩ Gain PAE 12 46 47 48 49 50 51 52 53 54 55 56 57 58 10 Output Power [dbm] 60 55 50 45 40 35 30 25 PAE [%] Gain [db] 22 21 19 18 17 16 14 13 QPD1003 - Gain and PAE vs. Output Power 1.2 GHz - Efficiency Tuned Zs-fo = 50-0.01iΩ Zs-2fo = 53.4+28.74iΩ Zs-3fo = 67.51+56.9iΩ Zl-fo = 117.619-0.032iΩ Zl-2fo = NaNΩ Zl-3fo = NaNΩ Gain PAE 12 46 47 48 49 50 51 52 53 54 55 56 25 Output Power [dbm] 75 70 65 60 55 50 45 40 35 30 PAE [%] Gain [db] 22 21 19 18 17 16 14 13 QPD1003 - Gain and PAE vs. Output Power 1.3 GHz - Power Tuned Zs-fo = 49.99+0.01iΩ Zs-2fo = 48.17+46.93iΩ Zs-3fo = 39.12-47.6iΩ Zl-fo = 33.332+0.002iΩ Zl-2fo = NaNΩ Zl-3fo = NaNΩ Gain PAE 12 46 47 48 49 50 51 52 53 54 55 56 57 58 10 Output Power [dbm] 60 55 50 45 40 35 30 25 PAE [%] Gain [db] 22 21 19 18 17 16 14 13 QPD1003 - Gain and PAE vs. Output Power 1.3 GHz - Efficiency Tuned Zs-fo = 49.99+0.01iΩ Zs-2fo = 48.17+46.93iΩ Zs-3fo = 39.12-47.6iΩ Zl-fo = 63.965+19.872iΩ Zl-2fo = NaNΩ Zl-3fo = NaNΩ Gain PAE 12 46 47 48 49 50 51 52 53 54 55 56 Output Power [dbm] 70 65 60 55 50 45 40 35 30 25 PAE [%] - 10 of 19 - www.qorvo.com
Typical Performance Load-Pull Drive-up 1, 2 1. 1 ms PW, 10% DC pulsed signal, VD = 50 V, IDQ = 750 ma 2. See page 14 for load-pull and source-pull reference planes where the performance was measured. Gain [db] 22 21 19 18 17 16 14 13 QPD1003 - Gain and PAE vs. Output Power 1.4 GHz - Power Tuned Zs-fo = 50-0.02iΩ Zs-2fo = 43.81+72iΩ Zs-3fo = 34.92-23.54iΩ Zl-fo = 46.6-19.245iΩ Zl-2fo = NaNΩ Zl-3fo = NaNΩ Gain PAE 12 46 47 48 49 50 51 52 53 54 55 56 57 58 10 Output Power [dbm] 60 55 50 45 40 35 30 25 PAE [%] Gain [db] 22 21 19 18 17 16 14 13 QPD1003 - Gain and PAE vs. Output Power 1.4 GHz - Efficiency Tuned Zs-fo = 50-0.02iΩ Zs-2fo = 43.81+72iΩ Zs-3fo = 34.92-23.54iΩ Zl-fo = 46.1+19.213iΩ Zl-2fo = NaNΩ Zl-3fo = NaNΩ Gain PAE 12 46 47 48 49 50 51 52 53 54 55 56 Output Power [dbm] 70 65 60 55 50 45 40 35 30 25 PAE [%] - 11 of 19 - www.qorvo.com
Power Drive-up Performance Over Temperatures Of 1.2 1.4 GHz EVB 1 1. VD = 50 V, IDQ = 750 ma, 1 ms PW, 10% DC 600 550 P3dB vs. Temperatures 1.2 GHz 1.3 GHz 1.4 GHz 19 18 G3dB vs. Temperatures 1.2 GHz 1.3 GHz 1.4 GHz P3dB [W] 500 450 400 350 300-40 -30 - -10 0 10 30 40 50 60 70 80 90 Temperature [ C] G3dB [db] 17 16 14 13 12 11 10-40 -30 - -10 0 10 30 40 50 60 70 80 90 Temperature [ C] DE3dB [%] 80 75 70 65 60 55 Drain Efficiency @ 3dB Compression vs. Temperatures 1.2 GHz 1.3 GHz 1.4 GHz Pdiss3dB [W] 450 400 350 300 250 Dissipation Power @ 3dB Compression vs. Temperatures 1.2 GHz 1.3 GHz 1.4 GHz 50 45 0 40-40 -30 - -10 0 10 30 40 50 60 70 80 90 Temperature [ C] 0-40 -30 - -10 0 10 30 40 50 60 70 80 90 Temperature [ C] - 12 of 19 - www.qorvo.com
Power Drive-up Performance At 25 C Of 1.2 1.4 GHz EVB 1 1. VD = 50 V, IDQ = 750 ma, 1 ms PW, 10% DC 530 P3dB vs. Frequency @ 25 C G3dB vs. Frequency @ 25 C 5 19 510 18 500 17 P3dB [W] 490 480 470 G3dB [db] 16 14 460 13 450 12 440 11 430 1.2 1.25 1.3 1.35 1.4 Frequency [GHz] 10 1.2 1.25 1.3 1.35 1.4 Frequency [GHz] DE3dB [%] 70 65 60 55 50 45 Drain Efficiency @ 3dB Compression vs. Frequency @ 25 C 40 1.2 1.25 1.3 1.35 1.4 Frequency [GHz] Pdiss3dB [W] 350 330 310 290 270 250 230 210 190 170 Dissipation Power @ 3dB compression vs. Frequency @ 25 C 0 1.2 1.25 1.3 1.35 1.4 Frequency [GHz] - 13 of 19 - www.qorvo.com
Pin Configuration and Description Pin Description Pin Symbol Description 1 VG / RF IN Gate voltage / RF Input 2 VD / RF OUT Drain voltage / RF Output 3 GND Package base / Ground - 14 of 19 - www.qorvo.com
Package Marking and Dimensions 1, 2 QPD1003 1. All dimensions are in mm. Otherwise noted, the tolerance is ±0. mm. 2. The QPD1003 will be marked with the 1000 designator and a lot code marked below the part designator. The YY represents the last two digits of the calendar year the part was manufactured, the WW is the work week of the assembly lot start, the MXXX is the production lot number. - of 19 - www.qorvo.com
Schematic 1.2 1.4 GHz EVB Bias-up Procedure Bias-down Procedure 1. Set V G to -4 V. 1. Turn off RF signal. 2. Set I D current limit to 800 ma. 2. Turn off V D 3. Apply 50 V V D. 3. Wait 2 seconds to allow drain capacitor to discharge 4. Slowly adjust V G until I D is set to 750 ma. 4. Turn off V G 5. Set I D current limit to 2 A 6. Apply RF. - 16 of 19 - www.qorvo.com
1.2 1.4 GHz EVB 1. PCB Material: RO4350B, mil thickness, 1 oz copper cladding Bill Of material 1.2 1.4 GHz EVB Ref Des Value Qty Manufacturer Part Number C1 680 uf 1 Panasonic EEU-FC2A681 C4, C5 82 pf 2 ATC ATC600S8JT250XT C9 1000 pf 1 Samsung CL31B102KGFNFNE C6, C19 27 pf 2 ATC 600S270JT250XT C7, C12 10000 pf 2 Panasonic ECJ-2VB2A103K C8 0.1 uf 1 Panasonic ECJ-3YB2A104K C10 100 pf 1 ATC ATC800A101JT250X C13 0.1 uf 1 Kemet C0805C104K5RACTU C14, C16 10 uf 2 Panasonic ECA-2AM100 C17, C18 10000 pf 2 Samsung CL31B103KGFNFNE R2 51 OHM 1 Panasonic ERJ-6GEYJ510 R3 10 OHM 1 Panasonic ERJ-8GEYJ100V R4 510 OHM 1 Panasonic ERJ-6GEYJ511 L1 100 nh 1 Coilcraft 0603LS-101XJLB L3, L4 n/a 1 STEWARD, INC. 35F0121-1SR-10 L5, L6 n/a 1 STEWARD, INC. 28F0181-1SR-10-17 of 19 - www.qorvo.com
Recommended Solder Temperature Profile QPD1003-18 of 19 - www.qorvo.com
Handling Precautions Parameter Rating Standard ESD Human Body Model (HBM) TBD ESDA / JEDEC JS-001-12 ESD Charged Device Model (CDM) TBD JEDEC JESD22-C101F MSL Moisture Sensitivity Level TBD IPC/JEDEC J-STD-0 Caution! ESD-Sensitive Device Solderability Compatible with both lead-free (260 C max. reflow temp.) and tin/lead (245 C max. reflow temp.) soldering processes. Solder profiles available upon request. Contact plating: NiPdAu RoHS Compliance This part is compliant with 11/65/EU RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment) as amended by Directive /863/EU. This product also has the following attributes: Lead Free Halogen Free (Chlorine, Bromine) Antimony Free TBBP-A (CH12Br402) Free PFOS Free SVHC Free Contact Information For the latest specifications, additional product information, worldwide sales and distribution locations, and information about Qorvo: Web: www.qorvo.com Tel: +1.972.994.8465 Email: info-sales@qorvo.com Fax: +1.972.994.8504 For technical questions and application information: Email: info-networks@qorvo.com Important Notice The information contained herein is believed to be reliable; however, Qorvo makes no warranties regarding the information contained herein and assumes no responsibility or liability whatsoever for the use of the information contained herein. All information contained herein is subject to change without. Customers should obtain and verify the latest relevant information before placing orders for Qorvo products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. THIS INFORMATION DOES NOT CONSTITUTE A WARRANTY WITH RESPECT TO THE PRODUCTS DESCRIBED HEREIN, AND QORVO HEREBY DISCLAIMS ANY AND ALL WARRANTIES WITH RESPECT TO SUCH PRODUCTS WHETHER EXPRESS OR IMPLIED BY LAW, COURSE OF DEALING, COURSE OF PERFORMANCE, USAGE OF TRADE OR OTHERWISE, INCLUDING THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Without limiting the generality of the foregoing, Qorvo products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death. Copyright 16 Qorvo, Inc. Qorvo is a registered trademark of Qorvo, Inc. - 19 of 19 - www.qorvo.com
Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Qorvo: QPD1003 QPD1003 EVB