NSS42LTG, NSV42LTG 4 V, 2. A, Low V CE(sat) NPN Transistor ON Semiconductor s e 2 PowerEdge family of low V CE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (V CE(sat) ) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical applications are DCDC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e 2 PowerEdge devices to be driven directly from PMU s control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers. Features NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ Qualified and PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant* 4 VOLTS, 2. AMPS NPN LOW V CE(sat) TRANSISTOR EQUIVALENT R DS(on) 44 m SOT2 (TO26) CASE 8 STYLE 6 BASE COLLECTOR 2 EMITTER MARKING DIAGRAM VB M VB M = Specific Device Code* = Date Code* = PbFree Package (Note: Microdot may be in either location) *Specific Device Code, Date Code or overbar orientation and/or location may vary depending upon manufacturing location. This is a representation only and actual devices may not match this drawing exactly. ORDERING INFORMATION *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Device Package Shipping NSS42LTG NSV42LTG SOT2 (PbFree) SOT2 (PbFree), / Tape & Reel, / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8/D. Semiconductor Components Industries, LLC, 2 June, 2 Rev. 8 Publication Order Number: NSS42L/D
NSS42LTG, NSV42LTG MAXIMUM RATINGS (T A = ) Rating Symbol Max Unit Collector-Emitter Voltage V CEO 4 Vdc Collector-Base Voltage V CBO 4 Vdc Emitter-Base Voltage V EBO 6. Vdc Collector Current Continuous I C 2. A Collector Current Peak I CM 6. A Electrostatic Discharge ESD HBM Class B MM Class C THERMAL CHARACTERISTICS Total Device Dissipation T A = Derate above Characteristic Symbol Max Unit P D (Note ) 46.7 mw mw/ C Thermal Resistance, JunctiontoAmbient R JA (Note ) 27 C/W Total Device Dissipation T A = Derate above P D (Note 2) 54 4. mw mw/ C Thermal Resistance, JunctiontoAmbient R JA (Note 2) 2 C/W Junction and Storage Temperature Range T J, T stg 55 to +5 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.. FR4 @ mm 2, oz. copper traces. 2. FR4 @ 5 mm 2, oz. copper traces. 2
NSS42LTG, NSV42LTG ELECTRICAL CHARACTERISTICS (T A = unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage (I C = madc, I B = ) CollectorBase Breakdown Voltage (I C =. madc, I E = ) EmitterBase Breakdown Voltage (I E =. madc, I C = ) Collector Cutoff Current (V CB = 4 Vdc, I E = ) Emitter Cutoff Current (V EB = 6. Vdc) ON CHARACTERISTICS DC Current Gain (Note ) (I C = ma, V CE = 2. V) (I C = 5 ma, V CE = 2. V) (I C =. A, V CE = 2. V) (I C = 2. A, V CE = 2. V) CollectorEmitter Saturation Voltage (Note ) (I C =. A, I B =. A) (I C =. A, I B =. A) (I C =. A, I B =. A) (I C = 2. A, I B =.2 A) BaseEmitter Saturation Voltage (Note ) (I C =. A, I B = ma) BaseEmitter Turnon Voltage (Note ) (I C =. A, V CE = 2. V) Cutoff Frequency (I C = ma, V CE = 5. V, f = MHz) V (BR)CEO 4 V (BR)CBO 4 V (BR)EBO 6. I CBO. I EBO. h FE 2 2 8 8 V CE(sat) 7.6.44.85.82..6.5.5 V BE(sat).76.9 V BE(on).76.9 f T 5 Vdc Vdc Vdc Adc Adc V V V MHz Input Capacitance (V EB =.5 V, f =. MHz) Cibo 45 pf Output Capacitance (V CB =. V, f =. MHz) Cobo 45 pf SWITCHING CHARACTERISTICS Delay (V CC = V, I C = 75 ma, I B = 5 ma) t d ns Rise (V CC = V, I C = 75 ma, I B = 5 ma) t r ns Storage (V CC = V, I C = 75 ma, I B = 5 ma) t s 75 ns Fall (V CC = V, I C = 75 ma, I B = 5 ma) t f ns. Pulsed Condition: Pulse Width = msec, Duty Cycle 2%.
NSS42LTG, NSV42LTG TYPICAL CHARACTERISTICS V CE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (V).25.2.5..5 I C /I B = 5 C 55 C V CE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (V).5..25.2.5..5 I C /I B = 55 C 5 C... Figure. Collector Emitter Saturation Voltage vs. Collector Current... Figure 2. Collector Emitter Saturation Voltage vs. Collector Current h FE, DC CURRENT GAIN 8 7 6 5 4 2.. 5 C (5. V) 5 C (2. V) (5. V) (2. V) 55 C (5. V) 55 C (2. V). Figure. DC Current Gain vs. Collector Current V BE(sat), BASE EMITTER SATURATION VOLTAGE (V)...9.8.7.6.5.4.. I C /I B =. 55 C 5 C. Figure 4. Base Emitter Saturation Voltage vs. Collector Current V BE(on), BASE EMITTER TURNON VOLTAGE (V)..9.8.7.6.5.4..2.. V CE = 2. V. 55 C 5 C. V CE, COLLECTOREMITTER VOLTAGE (V)..8.6.4.2. ma ma. ma I C = 5 ma I B, BASE CURRENT (ma) Figure 5. Base Emitter TurnOn Voltage vs. Collector Current Figure 6. Saturation Region 4
NSS42LTG, NSV42LTG TYPICAL CHARACTERISTICS 4 8 C ibo, INPUT CAPACITANCE (pf) 75 5 25 275 25 225 2 75 2 4 C ibo(pf) 5 6 C obo, OUTPUT CAPACITANCE (pf) 7 6 5 4 2 5 5 2 25 C obo(pf) 5 V EB, EMITTER BASE VOLTAGE (V) V CB, COLLECTOR BASE VOLTAGE (V) Figure 7. Input Capacitance Figure 8. Output Capacitance. Single Pulse Test at T amb =... s ms ms ms V CE, COLLECTOR EMITTER VOLTAGE (V) Figure 9. Safe Operating Area s 5
NSS42LTG, NSV42LTG PACKAGE DIMENSIONS SOT2 (TO26) CASE 88 ISSUE AP A E A D 2 e b HE SEE VIEW C L L VIEW C c.25 NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.5M, 982. 2. CONTROLLING DIMENSION: INCH.. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM MAX A.89...5.4.44 A..6...2.4 b.7.44.5.5.8.2 c.9..8..5.7 D 2.8 2.9.4..4.2 E.2..4.47.5.55 e.78.9 2.4.7.75.8 L..2..4.8.2 L.5.54.69.4.2.29 H E 2. 2.4 2.64.8.94.4 STYLE 6: PIN. BASE 2. EMITTER. COLLECTOR.95.7 SOLDERING FOOTPRINT.95.7 2..79.9.5.8. SCALE : mm inches ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 56, Denver, Colorado 827 USA Phone: 675275 or 84486 Toll Free USA/Canada Fax: 675276 or 844867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 82829855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 42 79 29 Japan Customer Focus Center Phone: 85875 6 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NSS42L/D