PM8HSA6 A K J L M LABEL V (2 REQD) C E R E B W 5 FO 4 VC CI 2 SR 1 V1 U φ (4 HOLES) G S φ (2 PLS) TYP Q 12 4 5 F D T SQ PIN (5 PLS) P H C Description: Mitsubishi Intelligent Power Modules are isolated base modules designed for power switching applications operating at frequencies to 2kHz. Built-in control circuits provide optimum gate drive and protection for the IGBT and free-wheel diode power devices. N VI VCC TEMP FO SR CI VC FO SR IN OUT1 OUT2 SENS SINK GND Outline Drawing and Circuit Diagram Dimensions Inches Millimeters A.46 88. B.85 98. C 1.16 29.5 D 2.76 7. E.15±.1 8.±.25 F 2.56 65. G 1.4+.4/-.2 4.+1/-.5 H.6 16. J.6 16.1 K 1. 25.4 L.2 5.1 C E Dimensions Inches Millimeters M 1.8 46.6 N.28 7. P.59 15. Q.1 2.54 R.71 18. S.8 2. T.2 SQ.64 SQ U.26 6.5 V M8 M8 W.79 2. Features: Complete Output Power Circuit Gate Drive Circuit Protection Logic Short Circuit Over Current Over Temperature Under Voltage Applications: Inverters UPS Motion/Servo Control Power Supplies Ordering Information: Example: Select the complete part number from the table below -i.e. PM8HSA6 is a 6V, 8 Ampere Intelligent Power Module. Type Current Rating V CES Amperes Volts (x 1) PM 8 6 Sep.2
PM8HSA6 Absolute Maximum Ratings, T j = 25 C unless otherwise specified Symbol Ratings Units Power Device Junction Temperature T j -2 to 15 C Storage Temperature T stg -4 to 125 C Case Operating Temperature T C -2 to 1 C Mounting Torque, M6 Mounting Screws.92 ~ 5.88 N m Mounting Torque, M8 Main Terminal Screws 8.8 ~ 1.8 N m Module Weight (Typical) 6 Grams Supply Voltage Protected by OC and SC (V D = 1.5 ~16.5V, Inverter Part) V CC(prot.) 4 Volts Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V iso 25 Vrms Control Sector, T j = 25 C unless otherwise specified Supply Voltage (Applied between V 1 -V C ) V D 2 Volts Input Voltage (Applied between C 1 -V C ) V CIN 1 Volts Fault Output Supply Voltage (Applied between F O and V NC ) V FO 2 Volts Fault Output Current (Sink Current of F O Terminal) I FO 2 ma IGBT Inverter Sector, T j = 25 C unless otherwise specified Collector-Emitter Voltage (, V CIN = 5V) V CES 6 Volts Collector Current, (T C = 25 C) I C 8 Amperes Peak Collector Current, (T C = 25 C) I CP 16 Amperes Collector Dissipation P C 21 Watts Sep.2
Electrical and Mechanical Characteristics, T j = 25 C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Control Sector MITSUBISHI INTELLIGENT POWER MODULES PM8HSA6 Over Current Trip Level Inverter Part OC -2 C T j 125 C, 1 15 Amperes Short Circuit Trip Level Inverter Part SC -2 C T j 125 C, 15 187 Amperes Over Current Delay Time t off(oc) 5 µs Over Temperature Protection OT Trip Level 1 11 12 C OT r Reset Level 85 95 15 C Supply Circuit Under Voltage Protection UV Trip Level 11.5 12. 12.5 Volts UV r Reset Level 12.5 Volts Supply Voltage V D Applied between V 1 -V C 1.5 15 16.5 Volts Circuit Current I D, V CIN = 5V 2 ma Input ON Threshold Voltage V th(on) Applied between C 1 -V C 1.2 1.5 1.8 Volts Input OFF Threshold Voltage V th(off) Applied between C 1 -V C 1.7 2. 2. Volts PWM Input Frequency f PWM -φ Sinusoidal 15 2 khz Arm Shoot-through Blocking Time t dead At IPM's Input Terminals.5 µs Fault Output Current I FO(H), V FO = 15V.1 ma I FO(L), V FO = 15V 1 15 ma Minimum Fault Output Pulse Width t FO 1. 1.8 ms SR Terminal Output Voltage V SR -2 C T j 125 C, Rin = 6.8kΩ 4.5 5.1 5.6 Volts Sep.2
PM8HSA6 Electrical and Mechanical Characteristics, T j = 25 C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units IGBT Inverter Sector Collector Cutoff Current I CES V CE = V CES, T j = 25 C 1. ma V CE = V CES, T j = 125 C 1. ma Emitter-Collector Voltage V EC -I C = 8A,, V CIN = 5V 1.9 2.8 Volts Collector-Emitter Saturation Voltage V CE(sat), V CIN = V, I C = 8A, 2. 2.7 Volts T j = 25 C, Pulsed, V CIN = V, I C = 8A, 2.1 2.8 Volts T j = 125 C, Pulsed Inductive Load Switching Times t on.5 1.4 2.5 µs t rr, V CIN = 5V.15. µs t C(on) V CC = V, I C = 8A.4 1. µs t off T j = 125 C 2.5.5 µs t C(off).5 1. µs Thermal Characteristics Characteristic Symbol Condition Min. Typ. Max. Units Junction to Case Thermal Resistance R th(j-c)q Each IGBT.6 C/Watt R th(j-c)f Each FWDi.9 C/Watt Contact Thermal Resistance R th(c-f) Case to Fin Per Module,.8 C/Watt Thermal Grease Applied Recommended Conditions for Use Characteristic Symbol Condition Value Units Supply Voltage V CC Applied across C-E Terminals ~ 4 Volts V D Applied between V 1 -V C 15 ± 1.5 Vol Input ON Voltage V CIN(on) Applied between C 1 -V C ~.8 Volts Input OFF Voltage V CIN(off) Applied between C 1 -V C 4. ~ V SR Volts PWM Input Frequency f PWM Using Application Circuit 5 ~ 2 khz Minimum Dead Time t dead Input Signal.5 µs Sep.2
PM8HSA6 SWITCHING TIMES, t on, t off, (µs) SATURATION VOLTAGE V CE(sat), (VOLTS) 2 1 1 1 1 SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 2 4 6 8 1 SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) V CC = V Inductive Load 1-1 1 2 1 1 4 t off t on DIODE FORWARD CHARACTERISTICS COLLECTOR-EMITTER SATURATION VOLTAGE V CE(sat), (VOLTS) SWITCHING TIMES, t c(on), t c(off), (µs) 2 1 1 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) I C = 8A 1 14 15 16 17 SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) 1 1 V CC = V Inductive Load t c(off) t c(on) 1-1 1 2 1 1 4 OVER CURRENT TRIP LEVEL VS. SUPPLY VOLTAGE (TYPICAL) REVERSE RECOVERY TIME, t rr, (µs) 8 6 4 2 1 1 2 COLLECTOR-EMITTER VOLTAGE, V CE(sat), (VOLTS) REVERSE RECOVERY CURRENT VS. COLLECTOR CURRENT (TYPICAL) 1 1 V CC = V Inductive Load OUTPUT CHARACTERISTICS (TYPICAL) V D = 17V I rr t rr 1-1 1 1 1 2 1 1 4 1 15 COLLECTOR REVERSE CURRENT, -I C, (AMPERES) OVER CURRENT TRIP LEVEL VS. TEMPERATURE (TYPICAL) 1 1 2 REVERSE RECOVERY CURRENT, I rr, (AMPERES) COLLECTOR REVERSE CURRENT, -I C, (AMPERES) 1 1 2 1 1 1 2 EMITTER-COLLECTOR VOLTAGE, V EC, (VOLTS) OVER CURRENT TRIP LEVEL % (NORMALIZED) 1.2 1.1 1..9.8.7 1 15 17 19 SUPPLY VOLTAGE, V D, (VOLTS) OVER CURRENT TRIP LEVEL % (NORMALIZED) 1.2 1.1 1..9.8.7 JUNCTION TEMPERATURE, T j, ( o C) -2 2 6 1 14 Sep.2
PM8HSA6 FAULT OUTPUT PULSE WIDTH VS. TEMPERATURE (TYPICAL) CONTROL SUPPLY VOLTAGE TRIP-RESET LEVEL TEMPERATURE DEPENDANCY (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (Each IGBT) FAULT OUTPUT PULSE WIDTH % (NORMALIZED) 1.2 1.1 1..9.8.7 JUNCTION TEMPERATURE, T j, ( o C) -2 2 6 1 14 UV TRIP-RESET LEVEL, UV, UV r, (VOLTS) 15 14 1 12 11 1 UV t UV r -2 2 6 1 JUNCTION TEMPERATURE, T j, ( o C) 14 TRANSIENT IMPEDANCE, Z th(j-c), (NORMALIZED VALUE) 1 1 1 1-1 1-2 1-1 - SINGLE PULSE STANDARD VALUE = R th(j-c)q =.6 o C/W 1-2 1-1 1 1 1 TIME, (s) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (Each FWDi) TRANSIENT IMPEDANCE, Z th(j-c), (NORMALIZED VALUE) 1 1 1 1-1 1-2 1-1 - SINGLE PULSE STANDARD VALUE = R th(j-c)f =.9 o C/W 1-2 1-1 1 1 1 TIME, (s) Sep.2