Datasheet * Power amplifier for DECT and PCS application * Fully integrated 3 stage amplifier * Operating voltage range: 2.7 to 6 V * Overall power added efficiency 35 % * Input matched to 5 Ω, simple output match ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code (taped) Package 1) CGY 18 CGY 18 Q68-A8882 MW 12 Maximum ratings Characteristics Symbol max. Value Unit Positive supply voltage V D 8 V Negative supply voltage 2 ) V G -8 V Supply current I D 1.2 A Maximum input power P in,max 1 dbm Channel temperature T Ch 15 C Storage temperature T stg -55...+15 C Total power dissipation (Ts < 81 C) P tot 2.3 W Ts: Temperature at soldering point Pulse peak power P Pulse 9.5 W Thermal Resistance Channel-soldering point R thchs 3 K/W 1) Plastic body identical to SOT 223, dimensions see chapter Package Outlines 2) V G = -8V only in combination with V TR = V; V G = -6V while V TR V Siemens Aktiengesellschaft pg. 1/15 21.2.96
Functional Block Diagram: VG (2) VD1 (8) VD2 (9) VD3 (11) VTR (1) Control circuit Pin (7) Pout (11) GND1 (6) GND2 (3,4,5,1) Pin # Configuration 1 VTR Control voltage for transmit (V) / receive (open) mode 2 VG Negative voltage at control circuit (-4V...-8V) 3 GND2 RF and DC ground of the 2nd and 3rd stage 4 GND2 RF and DC ground of the 2nd and 3rd stage 5 GND2 RF and DC ground of the 2nd and 3rd stage 6 GND1 RF and DC ground of the 1st stage 7 RFin RF input power 8 VD1 Pos. drain voltage of the 1st stage 9 VD2 Pos. drain voltage of the 2nd stage 1 GND2 RF and DC ground of the 2nd and 3rd stage 11 VD3, Pout Pos. drain voltage of the 3rd stage, RF output power 12 n.c. Siemens Aktiengesellschaft pg. 2/15 21.2.96
Control circuit: VG supply: Negative voltage (stabilization is not necessary) in the range of -4V...-8V. VTR supply: During transmit operation: V., negative supply current 1mA...2.5mA. During receive operation: not connected (shut off mode) The operation current ID of CGY 18 is adjusted by the internal control circuit. DC characteristics Characteristics Symbol Conditions min typ max Unit Drain current stage 1 IDSS1 VD=3V, VG=V, VTR n.c. 15 22 32 ma stage 2 IDSS2 15 22 32 ma stage 3 IDSS3 675 1 144 ma Drain current with ID VD=3V, VG=-4V, VTR=V 29 45 65 ma active current control Transconductance gfs1 VD=3V, ID=9mA 8 1 14 ms (stage 1-3) gfs2 VD=3V, ID=9mA 8 1 14 ms gfs3 VD=3V, ID=4mA 36 5 63 ms Pinch off voltage Vp VD=3V, ID<17µA -3.8-2.8-1.8 V (all stages) Siemens Aktiengesellschaft pg. 3/15 21.2.96
Electrical characteristics (T A = 25 C, f=1.89 GHz, Z S =Z L =5 Ohm, VD=3.V, VG=-4V, VTR pin connected to ground, unless otherwise specified) Characteristics Symbol min typ max Unit Supply current Pin = dbm Negative supply current (transmit operation) Shut-off current VTR n.c. Negative supply current (shut off mode, VTR pin n.c.) Gain P in = -2dBm Output Power P in = dbm Output Power VD=5V; P in = dbm Overall Power added Efficiency P in = dbm Harmonics (P in =dbm) 2f - VD=3V; (P out =27dBm) 3f - Harmonics (P in =dbm) 2f I DD - 45 - ma I G - 1 2.5 ma I D - 5 18 µa I G - 1 5 µa G 28 3 - db P o 25.5 27 - dbm P o - 3 - dbm η 3 35 - % - - - - -28-25 dbc VD=5V; (P out =3dBm) 3f - - - -22 - - - -25 dbc Input VSWR VD=3V; - - 2 : 1 2.5 : 1 - Third order intercept point VD=3V; pulsed with a duty cycle of 1%; IP 3-33.5 - dbm f 1 =1.89GHz; f 2 =1.891728GHz; Third order intercept point VD=4.8V; pulsed with a duty cycle of 1%; f 1 =1.89GHz; f 2 =1.891728GHz; Load mismatch Pin=dBm, VD 6V, Z S =5 Ohm, Load VSWR = 2:1 for all phase, VTR=V, VG=-4V Stability Pin=dBm, VD=2-7V, Z S =5 Ohm, Load VSWR = 3:1 for all phase, VTR=V, VG=-4V IP 3-38.5 - dbm - No module damage for 1 sec. - All spurious output more than 6 db below desired signal level - - Siemens Aktiengesellschaft pg. 4/15 21.2.96
DC - characteristics Input characteristics - typical measured values of stage 1 and 2, VD1 or VD2=3V,26 low current medium current high current,24,22,2,18,16,14,12 ID[A],1,8,6,4,2-4 -3,8-3,6-3,4-3,2-3 -2,8-2,6-2,4-2,2-2 -1,8-1,6-1,4-1,2-1 -,8 -,6 -,4 -,2 VG[V] Output characteristics - typical measured values of stage 1 and 2,22,2 V ID[A],18,16,14,12,1,8,6 -.2V -.3V -.5V -.7V -.8V -1.V -1.2V -1.3V -1.5V -1.7V -1.9V,4-2.1V,2-2.3V -2.5V,2,4,6,8 1 1,2 1,4 1,6 1,8 2 2,2 2,4 2,6 2,8 3 3,2 3,4 3,6 3,8 4 4,2 4,4 4,6 4,8 5 5,2 5,4 5,6 5,8 6 VD[V] Siemens Aktiengesellschaft pg. 5/15 21.2.96
Input characteristics - typical measured values of stage 3, VD3 = 3V 1,3 low current medium current high current 1,2 1,1 1,9,8,7,6,5 ID[A],4,3,2,1-4 -3,8-3,6-3,4-3,2-3 -2,8-2,6-2,4-2,2-2 -1,8-1,6-1,4-1,2-1 -,8 -,6 -,4 -,2 VG[V] Output characteristics - typical measured values of stage 3 1,1 1,9,8,7 V -.1V -.2V -.3V -.4V -.6V -.7V ID[A],6,5,4,3 -.9V -1.1V -1.3V -1.5V -1.7V,2-1.9V -2.1V,1-2.3V -2.5V,2,4,6,8 1 1,2 1,4 1,6 1,8 2 2,2 2,4 2,6 2,8 3 3,2 3,4 3,6 3,8 4 4,2 4,4 4,6 4,8 5 5,2 5,4 5,6 5,8 6 VD[V] Siemens Aktiengesellschaft pg. 6/15 21.2.96
Output power and power added efficiency pulsed mode: ton=1ms, duty cycle 1% Pout[dBm] P out and PAE vs. Pin f = 1.89 GHz, VD = 3 V, VG=-4V, VTR=V 3 36 29 34 28 Pout [dbm] 32 27 3 26 PAE [%] 28 25 26 24 24 23 22 22 2 21 18 2 16 19 14 18 12 17 1 16 8 15 6 14 4 13 2 12-2 -18-16 -14-12 -1-8 -6-4 -2 2 4 6 P in [dbm] PAE [%] P out and PAE vs. Pin f = 1.89 GHz, VD = 5 V, VG=-4V, VTR=V Pout [dbm] PAE [%] 45 4 35 3 25 2 15 1 5-2 -15-1 -5 5 1 P in [dbm] Pout [dbm] PAE [%] Siemens Aktiengesellschaft pg. 7/15 21.2.96
Gain vs. frequency VG=-4V, VTR=V 3V Pin=dBm 5V Pin=dBm 3V Pin=-2dBm 5V Pin=-2dBm 33 32 31 GAIN vs. DRAIN VOLTAGE f=1.89 GHz, VD=3V, VG=-4V, VTR=V Gain [db] 3 29 28 27 26 Gain [db] Pin= dbm Gain [db] Pin =-2dBm 25 2 3 4 5 6 V D [V] Siemens Aktiengesellschaft pg. 8/15 21.2.96
Output power control vs. VTR 35 7 3 6 25 5 Pout [dbm] 2 15 4 3 Id [ma] Pout (Vd=4.5V) [dbm] Pout (Vd=3V) [dbm] ID (Vd=4.5V) [ma] 1 2 ID (Vd=3V) [ma] 5 1,5 1 1,5 2 -VTR [V] Total Power Dissipation Ptot=f(T S ) Siemens Aktiengesellschaft pg. 9/15 21.2.96
Permissible pulse load P tot_max /P tot_dc = f(t_p) Siemens Aktiengesellschaft pg. 1/15 21.2.96
Test circuit board: The following impedances of the bias circuit should be seen from the CGY18 ports: Γ=.97 / 96 8 Γ=.96 / 142 9 Γ =.94 / -134 11 CGY 18 8 9 11 Γ Γ 8 9 Γ 11 (values measured at f=1.89 GHz) Size: 2 x 25 mm; In, Out: 5 Ohm Principal circuit: Vg 1nF 1nF 4.7uF 1nF +Vd 1nF 68pF 6.8pF 1.5pF VG (2) VD1 (8) VD2 (9) VD3 (11) VTR VTR (1) Control circuit In Pin(7) Pout (11) Out CGY18 GND1(6) GND2(3,4,5,1) Siemens Aktiengesellschaft pg. 11/15 21.2.96
Output power at different temperatures* 3 28 26 Pout [dbm] 24 22 2 18 Pout(-2 C) [dbm] Pout(+2 C) [dbm] Pout(+7 C) [dbm] 16-12 -1-8 -6-4 -2 2 4 Pin [dbm] Power added efficiency at different temperatures* 4 35 3 25 PAE [%] 2 15 1 5 PAE(-2 C) [%] PAE(+2 C) [%] PAE(+7 C) [%] -12-1 -8-6 -4-2 2 4 Pin [dbm] *)measured with a CGY18 test circuit board (see page 11) VD=3V, VG=-4V, VTR=V Siemens Aktiengesellschaft pg. 12/15 21.2.96
Emissions due to modulation:* Spectrum of amplified DECT signal Measurement was done with the following equipment: negative supply voltage -4V VG Pulsed Power Supply Trigger VD=3V pulsed with a duty cycle of 1% ton=1ms gate delay 3µs gate length 1ms DECT Signal Generator Pin=dBm IN VD CGY18 OUT Spectrum Analyzer ROHDE&SCHWARZ SME3 VTR HP 8561E *)measured with a CGY18 test circuit board (see page 11) VD=3V, VG=-4V, VTR=V Siemens Aktiengesellschaft pg. 13/15 21.2.96
APPLICATION - HINTS 1. CW - capability of the CGY18 1.1 V D = 3 V Proving the possibility of CW - operations there must be known the total power dissipation of the device. This value can be found as a function of the temperature in the datasheet (page 8/14). The CGY18 has a maximum total power dissipation of P tot = 2.3 W. As an example we take the operating point with a drain voltage V D = 3 V. The possible ratings of the drain current adjusted by the internal current control of the CGY18 ( V G = -4 V, V TR = V ) are shown in the following table. Min. Typ. Max. I D / ma 325 45 65 At worst case you see a current of I D = 65 ma. So the maximum DC - power can be calculated to P = V I =195. W DC D D This value is smaller than 2.3W and CW - operation is possible. 1.2 V D = 4 V If you want to use the whole capability of the CGY18, you must consider the power added efficiency PAE. You want to take an operation point of V D = 4 V. Now there will be a higher current than at V D = 3 V. We assume a current of I D = 65 ma and a PAE = 35 %. With these values the DC - power is P DC = 2.6 W. That exeeds the P totdc of 2.3 W. Decoupling RF-Power from the CGY18 results in less power dissipation of the device. This is directly correlated with the achieved PAE. To calculate total power dissipation use the formula: ( 1 ) P = P PAE totdc P tot for the used operating point shown above will be DC Ptot = 26. W( 1 35. ) = 169. W. It is possible to use the CGY18 for CW - operations up to a drain voltage of V D = 4 V, if at the same time a PAE of 35% is achieved. The calculation can be done for any operating point to prove the capability of CW - operation. Siemens Aktiengesellschaft pg. 14/15 21.2.96.
2. Not using the internal current control If you don' t want to use the internal current control, it is recommended to connect the negative supply voltage at pin 1 ( V TR ) instead of pin 2 ( V G ). 3. Biasing and use considerations In all cases, RF input power should not be applied until the bias voltages have been applied, and RF input power should be turned off prior to removing the bias voltages. Bias application should be timed such that gate voltage ( V GG ) is always applied before the drain voltages ( V DD ), and when returning to the standby mode, gate voltage should only be removed once the drain voltages have been removed. Siemens Aktiengesellschaft pg. 15/15 21.2.96