AON289 2V Dual PChannel MOSFET General Description The AON289 combines advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON). This device is ideal for load switch and battery protection applications. Product Summary V DS 2V I D (at V GS =4.5V) 2A R DS(ON) (at V GS =4.5V) < 68mΩ R DS(ON) (at V GS =2.5V) < 9mΩ R DS(ON) (at V GS =.8V) < 8mΩ Typical ESD protection HBM Class 2 Top View DFN 2x2A Bottom View D Pin S2 G2 D S G G D G2 Pin S S2 Absolute Maximum Ratings unless otherwise noted Parameter Symbol Maximum DrainSource Voltage 2 GateSource Voltage Continuous Drain Current G Pulsed Drain Current C Power Dissipation B T A =7 C T A =7 C Junction and Storage Temperature Range V DS V GS I DM T J, T STG Thermal Characteristics Parameter Symbol Typ Max Maximum JunctiontoAmbient A t s 5 6 Maximum JunctiontoAmbient A D R θja SteadyState 8 P D ±8 I D 2.6 8 2..3 55 to 5 Units V V A W C Units C/W C/W Rev : Nov. 22 www.aosmd.com Page of 5
AON289 Electrical Characteristics (T J = unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV DSS DrainSource Breakdown Voltage I D =25µA, V GS =V 2 V V DS =2V, V GS =V I DSS Zero Gate Voltage Drain Current µa T J =55 C 5 I GSS GateBody leakage current V DS =V, V GS = ±6V ± µa V GS(th) Gate Threshold Voltage V DS =V GS, I D =25µA.3.6.9 V I D(ON) On state drain current V GS =4.5V, V DS =5V 8 A R DS(ON) Static DrainSource OnResistance V GS =4.5V, I D =2A V GS =2.5V, I D =A V GS =.8V, I D =A 55 68 T J = 72 89 7 9 mω 9 8 mω g FS Forward Transconductance V DS =5V, I D =2A 8 S V SD Diode Forward Voltage I S =A,V GS =V.7 V I S Maximum BodyDiode Continuous Current.5 A DYNAMIC PARAMETERS C iss Input Capacitance 45 pf C oss Output Capacitance V GS =V, V DS =6V, f=mhz 5 pf C rss Reverse Transfer Capacitance 78 pf R g Gate resistance V GS =V, V DS =V, f=mhz 26 Ω SWITCHING PARAMETERS Q g (4.5) Total Gate Charge 4.4 nc Q gs Gate Source Charge V GS =4.5V, V DS =6V, I D =2A.8 nc Q gd Gate Drain Charge.9 nc t D(on) TurnOn DelayTime.8 ns t r TurnOn Rise Time V GS =4.5V, V DS =6V, R L =3Ω, 24.5 ns t D(off) TurnOff DelayTime R GEN =3Ω 54.5 ns t f TurnOff Fall Time 37.3 ns t rr Body Diode Reverse Recovery Time I F =2A, di/dt=a/µs 2 ns Q rr Body Diode Reverse Recovery Charge I F =2A, di/dt=a/µs 5 nc A. The value of R θja is measured with the device mounted on in 2 FR4 board with 2oz. Copper, in a still air environment with. The value in any given application depends on the user's specific board design. B. The power dissipation P D is based on R θja t s and the maxminum maximum allowed junction temperature of 5 C. C. Repetitive rating, pulse width limited by junction temperature T J(MAX) =5 C. Ratings are based on low frequency and duty cycles to keep initialt J =. D. The R θja is the sum of the thermal impedence from junction to lead R θjl and lead to ambient. E. The static characteristics in Figures to 6 are obtained using <3µs pulses, duty cycle.5% max. F. These curves are based on the junctiontoambient thermal impedence which is measured with the device mounted on in 2 FR4 board with 2oz. Copper, assuming a maximum junction temperature of T J(MAX) =5 C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. mω THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev: Nov. 22 www.aosmd.com Page 2 of 5
AON289 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 2 5 V 4.5V 2.5V 2 6 V DS =5V 2 I D (A) 5 V GS =2V I D (A) 8 4 2 3 4 5 4 V DS (Volts) Fig : OnRegion Characteristics 2 3 4.6 V GS (Volts) Figure 2: Transfer Characteristics R DS(ON) (mω) 2 8 6 4 V GS =.8V V GS =2.5V V GS =4.5V Normalized OnResistance.4.2 V GS =4.5V I D =2A V GS =2.5V I D =A V GS =.8V I D =A 2 2 4 6 I D (A) Figure 3: OnResistance vs. Drain Current and Gate Voltage.8 25 5 75 25 5 75 Temperature ( C) Figure 4: OnResistance vs. Junction Temperature R DS(ON) (mω) 4 2 8 6 4 I D =2A I S (A) E E E E2 E3 2 E4 2 4 6 8 V GS (Volts) Figure 5: OnResistance vs. GateSource Voltage E5..2.4.6.8..2 V SD (Volts) Figure 6: BodyDiode Characteristics Rev: Nov. 22 www.aosmd.com Page 3 of 5
AON289 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS V GS (Volts) 5 4 3 2 V DS =6V I D =2A Capacitance (pf) 7 6 5 4 3 2 C oss C iss 2 3 4 5 6 Q g (nc) Figure 7: GateCharge Characteristics C rss 3 6 9 2 V DS (Volts) Figure 8: Capacitance Characteristics. µs 2 I D (Amps).. R DS(ON) limited T J(Max) =5 C DC ms ms s Power (W) 5 5... V DS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E)... Pulse Width (s) Figure : Single Pulse Power Rating Junctionto Ambient (Note E) Z θja Normalized Transient Thermal Resistance.. D=T on /T T J,PK =T A P DM.Z θja.r θja R θja = C/W Single Pulse In descending order D=.5,.3,.,.5,.2,., single pulse. E5.... P D T on T Pulse Width (s) Figure : Normalized Maximum Transient Thermal Impedance (Note E) Rev: Nov. 22 www.aosmd.com Page 4 of 5
AON289 Gate Charge Test Circuit & Waveform Qg V Qgs Qgd Ig Charge RL Resistive Switching Test Circuit & Waveforms ton toff td(on) tr td(off) t f Rg 9% % Diode Recovery Test Circuit & Waveforms Q rr = Idt Ig Isd L Isd I F di/dt I RM t rr Rev: Nov. 22 www.aosmd.com Page 5 of 5