c271m-gr1.3 High Power RF LDMOS Field Effect Transistor W, 28 V, 9 27 MHz Description The is an unmatched -watt LDMOS FET suitable for power amplifier applications with frequencies from 9 MHz to 27 MHz. This LDMOS transistor offers excellent gain, efficiency and linearity performance in a small overmolded plastic package. Package PG-SON-1 (db) 19 17 V DD = 28 V, I DQ = 6 ma 1 MHz 4 MHz 7 MHz 6 4 1 Drain (%) Features Unmatched Typical CW performance, 94 MHz, 28 V - Output power (P 1dB ) = 6. W - = 23 db - = 62% Typical CW performance, 7 MHz, 28 V - Output power (P 1dB ) = 7.3 W - =.3 db - = 6% Typical CW performance, 26 MHz, 28 V - Output power (P 1dB ) = 7.3 W - = 19.9 db - = 9.% Capable of handling 1:1 VSWR @ 28 V, W (CW) output power Integrated ESD protection: Human Body Model Class 1A (per JESD-A114) Pb-free and RoHS compliant RF Characteristics, 7 MHz CW Specifications (tested in Wolfspeed test fixture) V DD = 28 V, I DQ = 6 ma, = W, ƒ 1 = 1 MHz, ƒ 2 = 7 MHz Characteristic Symbol Min Typ Max Unit G ps. 19. db All published data at T CASE = 2 C unless otherwise indicated ESD: Electrostatic discharge sensitive device observe handling precautions! Rev. 2, -6-
2 DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage V GS = V, I DS = 1 ma V( BR)DSS 6 V Drain Leakage Current V DS = 6 V, V GS = V I DSS 1 µa Gate Leakage Current V GS = 1 V, V DS = V I GSS 1 µa On-State Resistance V GS = 1 V, V DS =.1 V R DS(on) 2 W Operating Gate Voltage V DS = 28 V, I DQ = 6 ma V GS 2.2 2.7 3.2 V Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage V DSS 6 V Gate-Source Voltage V GS 6 to +1 V Operating Voltage V DD to +32 V Junction Temperature T J C Storage Temperature Range T STG 6 to + C Thermal Resistance (T CASE 7 C,. W CW) RqJC 3.84 C/W Moisture Sensitivity Level Level Test Standard Package Temperature Unit 3 IPC/JEDEC J-STD- 26 C Ordering Information Type Order Code Package and Description Shipping V2 R1K -V2-R1K PG-SON-1, molded plastic, SMD Tape & Reel, 1 pcs Evaluation Boards Order Code Frequency Description LTN/ V2 1 7 MHz Class AB with combined outputs, R436,.8 mm thick LTN/ E3 26 269 MHz Class AB with combined outputs, R436,.8 mm thick LTN/ E4 9 96 MHz Class AB with combined outputs, R436,.8 mm thick LTN/ E 19 199 MHz Class AB with combined outputs, R436,.8 mm thick LTN/ E6 8 MHz Class AB with combined outputs, R436,.8 mm thick Find Gerber files for these reference fixtures on the Wolfspeed Web site at www.wolfspeed.com/rf Rev. 2, -6-
c271m--gr 3 RF Characteristics, 7 MHz Two-carrier WCDMA Specifications (not subject to production test verified by design/characterization in Wolfspeed test fixture) V DD = 28 V, I DQ = 6 ma, =.8 W avg, ƒ 1 = 27. MHz, ƒ 2 = 27. MHz 3GPP WCDMA signal, channel bandwidth = 3.84 MHz, peak/average = 8 db @.1% CCDF Characteristic Symbol Min Typ Max Unit G ps db Drain h D. % Intermodulation Distortion IMD 3. dbc Typical Performance, 7 MHz (data taken in a production test fixture) V DD = 28 V, I DQ = 6 ma, ƒ = 1 MHz V DD = 28 V, I DQ = 6 ma, ƒ = 4 MHz IMD (dbc), (dbc) 6 3 2 Drain (%) IMD (dbc), (dbc) 6 3 2 Drain (%) -6-6 c271m--gr4 Rev. 2, -6-
c271m--gr8 c271m--gr7 c271m--gr11 4 Typical Performance, 7 MHz (cont.) IMD (dbc), (dbc) V DD = 28 V, I DQ = 6 ma, ƒ = 7 MHz -6 6 3 2 Drain (%) IMD (dbc) c271m--gr6 V DD = 28 V, I DQ = 6 ma, 1 1 4 4 7 7 CW Performance V DD = 28 V, I DQ = 6 ma CW Performance at selected supply voltage I DQ = 6 ma, ƒ = 7 MHz 24 66 7 (db) 14 6 1 MHz 4 MHz 7 MHz 4 42 (%) Power (db) 19 17 V DD = 24 V V DD = 28 V 1 V DD = 32 V 6 4 (%) Rev. 2, -6-
c271m--gr12 Typical Performance, 7 MHz (cont.) Small Signal CW Performance V DD = 28 V, I DQ = 6 ma Power (db) 19 17 IRL -1 - Input Return Loss (db) - 2 2 2 Frequency (MHz) Broadband Circuit Impedance, 7 MHz Freq [MHz] Z Source W Z Load W R jx R jx Z Source D Z Load 1 1. 2.6 9..4 4 1. 2.7 8.7. G 7 1. 2.9 7.7.6 S Load Pull Performance Pulsed CW signal: µsec, 1% duty cycle; 28 V, 6 ma P 1dB Class AB Max Output Power Max PAE Freq [MHz] Zs Zl [db] PAE [%] [dbm] Zl [db] PAE [%] [dbm] 1 1. j2.6 1.6 + j2.6.6. 39. 8.9 8.3 + j8.2. 64.9 38. 7.1 4 1.4 j2.7 9.8 + j2.8. 6.4 39.46 8.8 7.6 + j8.8.9 64.1 37.9 6.2 7 1.4 j2.9 9.2 + j2.8.7 6.2 39. 8.3 6.2 + j8.3 23. 63.8 37.4. Rev. 2, -6-
c 2 7 1 M _ c d _ 1-1 6-1 3 6 Reference Circuit, 7 MHz DUT Test Fixture Part No. LTN/ V2 PCB Rogers 4,.8 mm [."] thick, 2 oz. copper, ε r = 3.66 Find Gerber files for this test fixture on the Wolfspeed Web site at (www.wolfspeed.com/rf) VDD R11 C13 C3 C2 RF_IN C12 C11 R12 C1 C4 RF_OUT _6 MHz RO4,. (9) Production test circuit assembly diagram (not to scale) Components Information Component Description Supplier P/N C11 Chip capacitor, 1 pf ATC ATC6S1RBI2X C12 Chip capacitor, 2.2 µf TDK Corporation C32X7R1HMKA C13 Chip capacitor, 12 pf ATC ATC6S1BT2X C1 Chip capacitor, 1.1 pf ATC ATC6S1R1BT2X C2 Chip capacitor, 12 pf ATC ATC6S1BT2X C3 Capacitor, 1 µf Taiyo Yuden UMK32C716MM-T C4 Chip capacitor, 12 pf ATC ATC6S1BT2X R11, R12 Resistor, 1 W Panasonic ERJ-8GEYJ1V Rev. 2, -6-
c271m-9-gr1.3 c271m-9-gr7 7 RF Characteristics, 94 MHz Two-carrier WCDMA Specifications (not subject to production test verified by design/characterization in Wolfspeed test fixture) V DD = 28 V, I DQ = 6 ma, =.8 W avg, ƒ 1 = 93 MHz, ƒ 2 = 9 MHz 3GPP WCDMA signal, channel bandwidth = 3.84 MHz, peak/average = 8 db @.1% CCDF Characteristic Symbol Min Typ Max Unit G ps 24 db Drain h D.7 % Intermodulation Distortion IMD 42 dbc Typical Performance, 94 MHz 2 V DD = 28 V, I DQ = 6 ma 6 V DD = 28 V, I DQ = 6 ma (db) 24 23 9 MHz 94 MHz 96 MHz Drain (%) IMD (dbc) 9 IMDL 9 IMDU 94 IMDL 94 IMDU 96 IMDL 96 IMDU Rev. 2, -6-
c271m-9-gr4 c271m-9-gr6 c271m-9-gr c271m-9-gr8 8 Reference Circuit, 94 MHz (cont.) V DD = 28 V, I DQ = 6 ma, ƒ = 9 MHz V DD = 28 V, I DQ = 6 ma, ƒ = 94 MHz IMD (dbc), (dbc) 6 3 2 Drain (%) IMD (dbc), (dbc) 6 3 2 Drain (%) -6 24 26 28 32 34 36 38-6 24 26 28 32 34 36 38 IMD (dbc), (dbc) V DD = 28 V, I DQ = 6 ma, ƒ = 96 MHz -6 24 26 28 32 34 36 38 6 3 2 Drain (%) (db) 26 24 CW Performance V DD = 28 V, I DQ = 6 ma 6 2 29 33 37 41 9 MHz 94 MHz 96 MHz 66 4 42 (%) Rev. 2, -6-
c271m-9-gr9 c271m-9-gr12 9 Typical Performance, 94 MHz (cont.) CW Performance at selected supply voltages I DQ = 6 ma, ƒ = 96 MHz Small Signal CW Performance V DD = 28 V, I DQ = 6 ma 26 66 26-4 Power (db) 24 V DD = 24 V V DD = 28 V V DD = 32 V 6 4 42 (%) Power (db) 24-8 -12 - - IRL -24 7 8 8 9 9 1 1 11 Input Return Loss (db) Frequency (MHz) Broadband Circuit Impedance Freq [MHz] Z Source W Z Load W R jx R jx Z Source D Z Load 9 3.3 1 2.6 13.2 94 3.4 1.2 24.7 13.3 G 96 3. 1.3 24.3 14.7 S Loadpull Performance Pulsed CW signal: µsec, 1% duty cycle; 28 V, 6 ma P 1dB Class AB Max Output Power Max PAE Freq [MHz] Zs Zl [db] PAE [%] [dbm] Zl [db] PAE [%] [dbm] 9 3.3 + j1 2.7 + j4.7 2. 62.2 39.4 8.7 2.6 + j.7 27.6 7.7 38. 6.3 94 3.4 + j1.2 24.8 + j6.3 2.6 62.1 39.3 8.6 24.6 + j.4 27.3 69.2 38.1 6. 96 3. + j1.3 24.4 + j6.6 2.3 6.3 39.1 8.1 24.1 + j.8 27.3 68.2 37..6 Rev. 2, -6-
c271m-26-gr1.3 c271m-26-gr7 1 RF Characteristics, 26 MHz Two-carrier WCDMA Specifications (not subject to production test verified by design/characterization in Wolfspeed test fixture) V DD = 28 V, I DQ = 6 ma, =.8 W avg, ƒ 1 = 26 MHz, ƒ 2 = 266 MHz 3GPP WCDMA signal, channel bandwidth = 3.84 MHz, peak/average = 8 db @.1% CCDF Characteristic Symbol Min Typ Max Unit G ps.9 db Drain h D 19 % Intermodulation Distortion IMD 4 dbc Typical Performance, 26 MHz V DD = 28 V, I DQ = 6 ma, 6 V DD = 28 V, I DQ = 6 ma (db) 19 26 MHz 17 26 MHz 1 269 MHz 4 Drain (%) IMD (dbc) 26 26 26 26 269 269 Rev. 2, -6-
c271m-26-gr4 c271m-26-gr6 c271m-26-gr c271m-26-gr8 11 Typical Performance, 26 MHz (cont.) V DD = 28 V, I DQ = 6 ma, ƒ = 26 MHz V DD = 28 V, I DQ = 6 ma, ƒ = 26 MHz 6 6 IMD (dbc), (dbc) 3 2 Drain (%) IMD (dbc), (dbc) 3 2 Drain (%) -6-6 V DD = 28 V, I DQ = 6 ma, ƒ = 269 MHz CW Performance V DD = 28 V, I DQ = 6 ma IMD (dbc), (dbc) 6 3 2 Drain (%) (db) 19 17 26 MHz 26 MHz 269 MHz 7 6 4 1 (%) -6 Rev. 2, -6-
c271m-26-gr11 c271m-26-gr12 12 Typical Performance, 26 MHz (cont.) CW Performance at selected supply voltages I DQ = 6 ma, ƒ = 269 MHz Small Signal CW Performance V DD = 28 V, I DQ = 6 ma Power (db) 19 17 V DD = 24 V V DD = 28 V V DD = 32 V 7 6 4 1 (%) Power (db) 23 19 IRL -1 - Input Return Loss (db) 26 34 38 42 17-29 264 269 274 Frequency (MHz) Broadband Circuit Impedance Freq [MHz] Z Source W Z Load W R jx R jx Z Source D Z Load 249 1. 4.1 7.2 1. 29 1. 4.6 6.6.7 G 269 1.. 6.3 -.6 S Load Pull Performance Pulsed CW signal: µsec, 1% duty cycle; 28 V, 6 ma P 1dB Class AB Max Output Power Max PAE Freq [MHz] Zs Zl [db] PAE [%] [dbm] Zl [db] PAE [%] [dbm] 249 1. j4.1 8.2 + j.3 19.7.6 39. 7.94 6.2 + j2.8.9 62.2 38.4 6.9 29 1. j4.6 6.9 j.8.8.6 39. 7.94. + j2.1. 63.4 37.9 6.2 269 1. j. 7.8 j2..4.6 39. 7.94 4.9 + j.8.4 63.6 37.8 6. Rev. 2, -6-
PG-SON-1_po_2_12-7-12 13 Package Outline Specifications Package PG-SON-1.4 [.] 2 PLACES X.3 [.126] 2 PLACES 4. [.7] 6 7 8 9 1.8 [.3] 4. [.7] 2.97 [.117] 2.37 [.93] S INDEX MARKING TOP VIEW X. [.3] 2 PLACES. [.12] 4 3 2 1 4X.6 [.26] 2 PLACES 3.4 [.134] INDEX MARKING BOTTOM VIEW 1.42 [.6].38 [.] BOTH SIDES. [.2] SIDE VIEW Diagram Notes unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ±.1 [.4]. 4. Package dimensions: 4. mm X 4. mm X 1.42 mm.. Pins: 1, gate; 6 1, drain; S (bottom side metallization), source. 6. Gold plating thickness:.2.127 micron [1 microinch]. Rev. 2, -6-
14 Revision History Revision Date Data Sheet Type Page Subjects (major changes since last revision) 1-3- Production All Specifications and performance represent released product. 1.1-7-26 Production 2 Add ordering information for additional evaluation boards. 2-6- Production All Converted to Wolfspeed Data Sheet For more information, please contact: 46 Silicon Drive Durham, North Carolina, USA 2773 www.wolfspeed.com/rf Sales Contact RFSales@wolfspeed.com RF Product Marketing Contact RFMarketing@wolfspeed.com 919.47.78 Notes Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Typical parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. Copyright Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Wolfspeed and the Wolfspeed logo are trademarks of Cree, Inc. Rev. 2, -6- www.wolfspeed.com